Abstract: The present application provides a method and a system for controlling continuous high voltage ride-through and low voltage ride-through of a permanent magnet direct-driven wind turbine. The method includes: determining a transient time period during which the wind turbine is transitioned from a high voltage ride-through state to a low voltage ride-through state; controlling the wind turbine to provide, during the transient time period, a gradually increasing active current to the point of common coupling; and controlling the wind turbine to provide, during the transient time period, a reactive current to the point of common coupling according to an operation state of the wind turbine before the high voltage ride-through state.

Abstract: An interconnection structure used in an electronic device includes a chassis, a first line board, a second line board, and a heat dissipation component. The heat dissipation component is disposed on a first side surface of the chassis, the first side surface includes a first opening, the second line board is horizontally disposed inside the chassis, the first line board is vertically inserted onto a side surface of the second line board, and a second side surface that is of the chassis and that is opposite to the first side surface includes a second opening. The second line board is horizontally disposed inside the chassis, and the first line board is vertically inserted onto the side surface of the second line board, to reduce a quantity of parts on a system air duct, reduce a flow resistance of a system, and improve a heat dissipation capability of the system.

Abstract: Disclosed are a bidirectional power device and a method for manufacturing the same. The bidirectional power device includes a semiconductor layer, a plurality of trenches located in the semiconductor layer, a gate dielectric layer located on an inner wall of each of the plurality of trenches, a control gate located at a lower portion of each of the plurality of trenches, a shield gate located at an upper portion of each of the plurality of trenches and an isolation layer located between the control gate and the shield gate. When the bidirectional power device is turned off, charges of a source region and a drain region are depleted by the shield gate through a shield dielectric layer, thereby improving voltage withstand property. When the bidirectional power device is turned on, the source region and/or the drain region and the semiconductor layer provide a low-impedance conduction path.

Abstract: A compound represented by formula (I), or a stereochemical isomer thereof, or a solvate thereof, or a pharmaceutically acceptable salt thereof, can inhibit the activity of histone acetylase p300 and inhibit the proliferation activity of a variety of tumor cells.

Abstract: A method, apparatus and device for storing vehicular data. An embodiment of a method for storing vehicular data includes: analyzing importance of received vehicular data to determine a storage level of the vehicular data; acquiring a corresponding key and a corresponding encryption algorithm based on the storage level of the vehicular data; encrypting the vehicular data using the acquired key and the acquired encryption algorithm; and storing encrypted vehicular data in a storage area corresponding to the storage level of the vehicular data. The embodiment may improve the safety of vehicular data by encrypted storage of the data in different levels, effectively prevent important vehicular data from being illegally read or maliciously falsified, and improve the storage efficiency of the vehicular data.

Abstract: The present invention relates to microorganism identification, and more particularly to a molecular marker for identifying Sanxan gum and its synthetic strain, and preparation method and application thereof. The molecular marker is prepared by PCR amplification using genomic DNA of Sphingomonas sp. with deposit number CGMCC No. 1650 or CGMCC No. 19480 as a template for PCR amplification, and the primer 1 with nucleotide sequence shown in SEQ No. 5 and the primer 2 with nucleotide sequence shown in SEQ No. 6 as primers. The present invention overcomes the problems that three gums must be separated from each other by cloning and sequencing and other operations in a compound gum system containing Sanxan gum, gellan gum and welan gum which results in cumbersome steps.

Abstract: The present invention relates to Sanxan gum preparation, and more particularly to a Sanxan gum synthetic strain-Sphingomonas sp. with a molecular marker and application thereof in Sanxan gum preparation by inoculating the Sphingomonas sp. strain (CGMCC No. 19480) into a culture medium containing a carbon source and a nitrogen source after sterilization, aeration fermentation and extraction. The invention solves the problems of no rapid identification of a product containing Sanxan gum and synthetic strain, and low performance indexes of a prepared Sanxan gum. It can quickly identify whether a product contains Sanxan gum. The main technical indicators of the prepared Sanxan gum products are significantly better than the existing products.

Abstract: The compound of formula (I) has a good inhibitory effect on the proliferation of human prostate cancer cells CWR22RV1 and breast cancer cells; and combined use of the compound with an androgen receptor inhibitor HC-1119 significantly enhances the inhibitory effect on prostate cancer cells, and the inhibitory effect increases with increased concentration. The compound of formula (I) can not only be used independently to prepare an antineoplastic agent but can also be used in combination with other agents having antineoplastic effects, such as an androgen receptor inhibitor, or other targeting drugs etc., to prepare an antineoplastic agent having stronger therapeutic effects, especially an agent for treating prostate cancer and breast cancer.

Abstract: A method and apparatus for acquiring vehicular data. An embodiment of the method includes: acquiring vehicular data of an autonomous vehicle equipped with a vehicular data acquisition device by the vehicular data acquisition device, the vehicular data comprising: a control instruction of the autonomous vehicle and sensor data from a sensor on the autonomous vehicle; encrypting the vehicular data to obtain encrypted vehicular data, and storing the encrypted vehicular data; receiving a request for acquiring vehicular data sent by a server; and sending the encrypted vehicular data to the server when the vehicle identifier is identical to a vehicle identifier of the autonomous vehicle and the device identifier is identical to a device identifier of the vehicular data acquisition device.

Abstract: A method for manufacturing a power device is disclosed. The method for manufacturing the power device comprises: forming a first doped region on the semiconductor substrate; forming a plurality of second doped regions in a first region of the first doped region; and forming a plurality of third doped regions in a second region of the first doped region. A first charge compensation structure is formed by the first doped region and the plurality of second doped regions, the first charge compensation structure and the semiconductor substrate are located on current channel. A second charge compensation structure is formed by the first doped region and the plurality of third doped regions, the second charge compensation structure is configured to disperse continuous surface electric field of the power device. The power device manufactured by the method not only has a stable blocking voltage and an improved reliability, but also has a reduced on-resistance.

Abstract: A power device is disclosed. The power device comprises: a semiconductor substrate; a first doped region on the semiconductor substrate; a plurality of second doped regions located in a first region of the first doped region; a plurality of third doped regions located in a second region of the first doped region. The plurality of second doped regions are separated with each other at a first predetermined spacing. A first charge compensation structure is formed by the plurality of second doped regions and the first doped region, and the first charge compensation structure and the semiconductor substrate are located on a current channel. The plurality of third doped regions are separated with each other at a second predetermined spacing. A second charge compensation structure is formed by the plurality of third doped regions and the first doped region. The second charge compensation structure is configured to disperse continuous surface electric field of the power device.

Abstract: A mattress for evenly gathering and dispersing human body gravity comprises elastic surface layer connecting cloth (1), elastic support frames (2), lateral connecting cloth (3), a filling region (4), granular fillers (5), a filler inlet/outlet (6), lower connecting cloth (7), a foot limiting belt (8), a leg limiting belt (9), hip limiting belts (10) and a back limiting belt (11) (“limiting belts” for short). The width of each of the limiting belts (8, 9, 10, 11) is less than that of the filling region. Upper ends and lower ends of the limiting belts (8, 9, 10, 11) are separately connected to an upper cloth layer and a lower cloth layer. When the mattress is stressed by human body gravity, the granular fillers automatically move towards a gravity-free region and fill a gap between the human body and the mattress, so as to provide a larger balanced stress surface for the human body and realize balancing of the human body gravity.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: Disclosed is a BRD4 inhibitor as shown in formula I, belonging to the field of compound drugs. The compound provided has a good inhibitory effect on prostate cancer cell proliferation, and can be used for preparing a drug combatting tumors, autoimmune or inflammatory diseases and viral infection, and in particular an anti-prostate cancer drug.

Abstract: The objective of the present disclosure is to provide a method and device for communicating securely between a T-Box device and an ECU device in an Internet of Vehicles system. Specifically, sending, by a T-Box device, a first piece of information to a corresponding ECU device; generating, by the ECU device, a second piece of information; generating, by the T-Box device, a third piece of information; generating, by the T-Box device, a first key; encrypting, by the T-Box device, a to-be-issued instruction based on the first key; generating, by the ECU device, a second key; and decrypting, by the ECU device, the encrypted instruction based on the second key to obtain the instruction. Compared with the prior art, the present disclosure achieves the secure communication between the T-Box device and the ECU device.

Abstract: Quinoline compounds and salts, hydrates or solvates serving as a selective uric acid reabsorption inhibitor, can be used in the treatment of hyperuricemia and gout by promoting uric acid to excrete from the body and reducing serum uric acid. Such compounds have the effect of reducing the uric acid in the animal body and human body.

Abstract: A method for manufacturing a power device is disclosed. The method for manufacturing the power device comprises: forming a first doped region on the semiconductor substrate; forming a plurality of second doped regions in a first region of the first doped region; and forming a plurality of third doped regions in a second region of the first doped region. A first charge compensation structure is formed by the first doped region and the plurality of second doped regions, the first charge compensation structure and the semiconductor substrate are located on current channel. A second charge compensation structure is formed by the first doped region and the plurality of third doped regions, the second charge compensation structure is configured to disperse continuous surface electric field of the power device. The power device manufactured by the method not only has a stable blocking voltage and an improved reliability, but also has a reduced on-resistance.

Abstract: A power device is disclosed. The power device comprises: a semiconductor substrate; a first doped region on the semiconductor substrate; a plurality of second doped regions located in a first region of the first doped region; a plurality of third doped regions located in a second region of the first doped region. The plurality of second doped regions are separated with each other at a first predetermined spacing. A first charge compensation structure is formed by the plurality of second doped regions and the first doped region, and the first charge compensation structure and the semiconductor substrate are located on a current channel. The plurality of third doped regions are separated with each other at a second predetermined spacing. A second charge compensation structure is formed by the plurality of third doped regions and the first doped region. The second charge compensation structure is configured to disperse continuous surface electric field of the power device.

Abstract: The present invention provides a switching power supply and a controller thereof, wherein the controller comprises: a switching power supply control device having a power supply terminal and detecting a voltage at the power supply terminal; a composite device integrating therein a power transistor and a depletion transistor, wherein the power transistor has a gate coupled to a first input, a source coupled to a first output, and a drain coupled to an input signal terminal; the depletion transistor has a gate coupled to a second input, a source coupled to a second output, and a drain coupled to the input signal terminal; the first input, the second input and the second output are coupled to the switching power supply control device, the first input receives a driving signal generated by the switching power supply control device, and the input signal terminal receives an input signal of the switching power supply.