Abstract: The present disclosure discloses a method and apparatus for acquiring vehicular data. An embodiment of the method comprises: acquiring vehicular data of an autonomous vehicle equipped with a vehicular data acquisition device by the vehicular data acquisition device, the vehicular data comprising: a control instruction of the autonomous vehicle and sensor data from a sensor on the autonomous vehicle; encrypting the vehicular data to obtain encrypted vehicular data, and storing the encrypted vehicular data; receiving a request for acquiring vehicular data sent by a server; and sending the encrypted vehicular data to the server when the vehicle identifier is identical to a vehicle identifier of the autonomous vehicle and the device identifier is identical to a device identifier of the vehicular data acquisition device.

Abstract: The present disclosure discloses a method, apparatus and device for storing vehicular data. An embodiment of a method for storing vehicular data comprises: analyzing importance of received vehicular data to determine a storage level of the vehicular data; acquiring a corresponding key and a corresponding encryption algorithm based on the storage level of the vehicular data; encrypting the vehicular data using the acquired key and the acquired encryption algorithm; and storing encrypted vehicular data in a storage area corresponding to the storage level of the vehicular data. The embodiment may improve the safety of vehicular data by encrypted storage of the data in different levels, effectively prevent important vehicular data from being illegally read or maliciously falsified, and improve the storage efficiency of the vehicular data.

Abstract: Quinoline compounds and salts, hydrates or solvates serving as a selective uric acid reabsorption inhibitor, can be used in the treatment of hyperuricemia and gout by promoting uric acid to excrete from the body and reducing serum uric acid. Such compounds have the effect of reducing the uric acid in the animal body and human body.

Abstract: The objective of the present disclosure is to provide a method and device for communicating securely between a T-Box device and an ECU device in an Internet of Vehicles system. Specifically, sending, by a T-Box device, a first piece of information to a corresponding ECU device; generating, by the ECU device, a second piece of information; generating, by the T-Box device, a third piece of information; generating, by the T-Box device, a first key; encrypting, by the T-Box device, a to-be-issued instruction based on the first key; generating, by the ECU device, a second key; and decrypting, by the ECU device, the encrypted instruction based on the second key to obtain the instruction. Compared with the prior art, the present disclosure achieves the secure communication between the T-Box device and the ECU device.

Abstract: Disclosed are a plastic-metal composite material and a manufacturing method thereof. The method including: S1. injection molding: subjecting a mixture of a metal powder and a binder to injection molding to form a metal structural member of a preset shape; S2. degreasing and sintering: subjecting the metal structural member to degreasing and sintering to remove the binder, to form 0.5-2 ?m micron-sized micropores on a surface of the metal structural member; S3. nanocrystallization: on the basis of the micron-sized micropores, forming 20-40 nm nano-sized micropores by etching with a chemical etching reagent; and S4. injection molding: placing the metal structural member filled with a chemical reagent in an injection mold for injection molding to be integrated with a plastic. The composite material is a product manufactured according to the method. The application solves the problem that the metal structural member is difficult to be molded.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: This invention provides a composite device and a switching power supply. The composite device integrates therein a first enhancement-mode MOS device and a depletion-mode MOS device, and comprises: an epitaxial region of a first doping type; a first well region and a second well region formed in parallel on the front side of the epitaxial region; a first doped region of the first doping type formed within the first well region; a gate of the first enhancement-mode MOS device; a second doped region of the first doping type formed within the second well region; a channel region of the first doping type, wherein the channel region extends from a boundary of the second well region to a boundary of the second doped region; and a gate of the depletion-mode MOS device. The switching power supply includes the composite device above. This invention can decrease the process complexity, reduce the chip area and cost, and may be applicable to high power scenarios.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: This invention provides a composite device and a switching power supply. The composite device integrates therein a first enhancement-mode MOS device and a depletion-mode MOS device, and comprises: an epitaxial region of a first doping type; a first well region and a second well region formed in parallel on the front side of the epitaxial region; a first doped region of the first doping type formed within the first well region; a gate of the first enhancement-mode MOS device; a second doped region of the first doping type formed within the second well region; a channel region of the first doping type, wherein the channel region extends from a boundary of the second well region to a boundary of the second doped region; and a gate of the depletion-mode MOS device. The switching power supply includes the composite device above. This invention can decrease the process complexity, reduce the chip area and cost, and may be applicable to high power scenarios.

Abstract: The present invention provides a switching power supply and a controller thereof, wherein the controller comprises: a switching power supply control device having a power supply terminal and detecting a voltage at the power supply terminal; a composite device integrating therein a power transistor and a depletion transistor, wherein the power transistor has a gate coupled to a first input, a source coupled to a first output, and a drain coupled to an input signal terminal; the depletion transistor has a gate coupled to a second input, a source coupled to a second output, and a drain coupled to the input signal terminal; the first input, the second input and the second output are coupled to the switching power supply control device, the first input receives a driving signal generated by the switching power supply control device, and the input signal terminal receives an input signal of the switching power supply.

Abstract: A method for operating a lock in a computing system having plural processing units and running under multiple runtime environments is provided. When a requester thread attempts to acquire the lock while the lock is held by a holder thread, determine whether the holder thread is suspendable or non-suspendable. If the holder thread is non-suspendable, put the requester thread in a spin state regardless of whether the requester thread is suspendable or non-suspendable; otherwise determines whether the requester thread is suspendable or non-suspendable unless the requester thread quits acquiring the lock. If the requester thread is non-suspendable, arrange the requester thread to attempt acquiring the lock again; otherwise add the requester thread to a wait queue as an additional suspended thread. Suspended threads stored in the wait queue are allowable to be resumed later for lock acquisition. The method is applicable for the computing system with a multicore processor.

Abstract: A system and method are provided, for example, for determining interests from location data, by receiving location data from a mobile device, using the location data to determine a uniform resource locator associated with a point of interest, determining classification data associated with the uniform resource locator, and updating an interest graph associated with the mobile device using the classification data. The updated interest graph may also be subsequently used and the classification data may be used to provide information to the mobile device in real-time, such as recommendations or suggestions.

Abstract: A method for operating a lock in a computing system having plural processing units and running under multiple runtime environments is provided. When a requester thread attempts to acquire the lock while the lock is held by a holder thread, determine whether the holder thread is suspendable or non-suspendable. If the holder thread is non-suspendable, put the requester thread in a spin state regardless of whether the requester thread is suspendable or non-suspendable; otherwise determines whether the requester thread is suspendable or non-suspendable unless the requester thread quits acquiring the lock. If the requester thread is non-suspendable, arrange the requester thread to attempt acquiring the lock again; otherwise add the requester thread to a wait queue as an additional suspended thread. Suspended threads stored in the wait queue are allowable to be resumed later for lock acquisition. The method is applicable for the computing system with a multicore processor.

Abstract: A mattress for evenly gathering and dispersing human body gravity comprises elastic surface layer connecting cloth (1), elastic support frames (2), lateral connecting cloth (3), a filling region (4), granular fillers (5), a filler inlet/outlet (6), lower connecting cloth (7), a foot limiting belt (8), a leg limiting belt (9), hip limiting belts (10) and a back limiting belt (11) (“limiting belts” for short). The width of each of the limiting belts (8, 9, 10, 11) is less than that of the filling region. Upper ends and lower ends of the limiting belts (8, 9, 10, 11) are separately connected to an upper cloth layer and a lower cloth layer. When the mattress is stressed by human body gravity, the granular fillers automatically move towards a gravity-free region and fill a gap between the human body and the mattress, so as to provide a larger balanced stress surface for the human body and realize balancing of the human body gravity.

Abstract: A system and method are provided, for example, for determining interests from location data, by receiving location data from a mobile device, using the location data to determine a uniform resource locator associated with a point of interest, determining classification data associated with the uniform resource locator, and updating an interest graph associated with the mobile device using the classification data. The updated interest graph may also be subsequently used and the classification data may be used to provide information to the mobile device in real-time, such as recommendations or suggestions.

Abstract: Disclosed are a plastic-metal composite material and a manufacturing method thereof. The method including: S1. injection molding: subjecting a mixture of a metal powder and a binder to injection molding to form a metal structural member of a preset shape; S2. degreasing and sintering: subjecting the metal structural member to degreasing and sintering to remove the binder, to form 0.5-2 ?m micron-sized micropores on a surface of the metal structural member; S3. nanocrystallization: on the basis of the micron-sized micropores, forming 20-40 nm nano-sized micropores by etching with a chemical etching reagent; and S4. injection molding: placing the metal structural member filled with a chemical reagent in an injection mold for injection molding to be integrated with a plastic. The composite material is a product manufactured according to the method. The application solves the problem that the metal structural member is difficult to be molded.

Abstract: The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process.

Abstract: One embodiment of the present invention provides a method for fabricating an InGaAlN light-emitting semiconductor structure. During the fabrication process, at least one single-crystal sacrificial layer is deposited on the surface of a base substrate to form a combined substrate, wherein the single-crystal sacrificial layer is lattice-matched with InGaAlN, and wherein the single crystal layer forms a sacrificial layer. Next, the InGaAlN light-emitting semiconductor structure is fabricated on the combined substrate. The InGaAlN structure fabricated on the combined substrate is then transferred to a support substrate, thereby facilitating a vertical electrode configuration. Transferring the InGaAlN structure involves etching the single-crystal sacrificial layer with a chemical etchant. Furthermore, the InGaAlN and the base substrate are resistant to the chemical etchant. The base substrate can be reused after the InGaAlN structure is transferred.