Abstract: The present invention is directed to components and the process of forming the components for housing semiconductor devices. The components are formed of a unique ceramic-glass-metal composite material comprising ceramic particles, metallic particles and a glass matrix with said ceramic and metallic particles dispersed throughout. Metal elements can be embedded into the material to enable simplified fabrication of devices such as semiconductor packaging.

Abstract: A semiconductor package for mounting a chip is disclosed. The package includes a first metal or metal alloy component having a first thin refractory oxide layer on a first surface. The chip is bonded to the first component. A skirt extends from the first component for strengthening the first component and providing heat transfer from the semiconductor package. A second metal or metal alloy lead frame having second and third refractory oxide layers on opposite surfaces is electrically connected to the chip and is bonded to the first oxide layer. Also, the lead frame is insulated from the first component by the first and second refractory oxide layers. A second metal or metal alloy component has a fourth refractory oxide layer on one surface and is bonded to the third refractory oxide layer so that the chip is hermetically sealed between the first and second components.

Abstract: An integrated circuit assembly for electrical applications is disclosed. The assembly includes a lead frame formed from a composite structure. The composite structure comprises a substrate formed of a nickel-iron alloy. A cladding is bonded to opposite surfaces of the substrate. The cladding consists essentially of about 15% to about 70% nickel and the balance essentially copper. The resulting lead frame has a coefficient of thermal expansion of about 50 to about 100 in/in/.degree.C. A second embodiment of the integrated circuit assembly also relates to a lead frame formed from a composite structure. The composite structure comprises a substrate formed of a nickel-iron alloy. A cladding material is bonded to opposite surfaces of the substrate for providing the circuit assembly with relatively high electrical and thermal conductivity. A second cladding is bonded to opposite surfaces of the first cladding so that the lead frame has a coefficient of thermal expansion of about 50 to about 100 in/in/.degree.C.

Abstract: A hermetic tape package and a process for forming the hermetic tape package are disclosed. The package is capable of high lead densities and occupies a minimum of space. A test frame is incorporated into the package to permit testing of an electronic device prior to sealing the package.

Abstract: A package adapted to encase an electronic component is disclosed. The package comprises a metallic lid component disposed on a metallic base component to form an enclosure adapted to receive said electronic component. A metallic leadframe is disposed between the base and lid components and is glass or polymer sealed therebetween. The base component is split into first and second base layers which are bonded together at their interface with a layer of electrically insulating glass or polymer. In one embodiment, the first and second base layers are bonded only around the edges of their interface, with the internal cavity thereby formed filled with a fluid or powder to enhance heat transfer between the layers. A fluid or powder may also be placed in the electronic component enclosure for further enhancement of heat transfer from the electronic component.

Abstract: A metal package for housing an electronic device wherein the electronic device is attached to a severable die attach pad. The die attach pad is bonded to the base of the package with a thermally conductive medium. The base is bonded to the die attach pad and to the leadframe at the same time to reduce the thermal degradation of the sealants. In other embodiments, apertures are provided in the base component to enhance cooling of the electronic device and in the cover component to vent reaction by-products.

Abstract: Reinforced glass composites are disclosed which are useful in hermetic semiconductor packaging as well as other applications. The disclosed composites include discrete particles in a tin-phosphorous-oxyfluoride glass mixture having a low glass transition temperature to prevent serious degradation of the discrete particles.

Abstract: A semiconductor package for an electrical component which has a metal or metal alloy leadframe with first and second surface, which leadframe is adapted to have an electrical component connected thereto. The leadframe is bonded by means of a polymer to a copper or copper alloy base member. The leadframe is also bonded by means of a polymer to a copper or copper alloy cap member. The cap and base members have coated to their inside surfaces a metal or metal alloy. The coating improves the polymer bond between the leadframe and the base and cap members. The surface area of the base member is increased to transfer more heat from the silicon chip in the semiconductor package and to reduce the thermal stresses between the silicon chip and the base member.

Abstract: The present invention is directed to an engineering ceramic product formed of a ceramic-glass-metal composite being strong, durable, formable into complex shapes and having good improved thermal conductivity.

Abstract: The present invention is directed to components and the process of forming the components for housing semiconductor devices. The components are formed of a unique ceramic-glass-metal composite material comprising ceramic particles, metallic particles and a glass matrix with said ceramic and metallic particles dispersed throughout. Metal elements can be embedded into the material to enable simplified fabrication of devices such as semiconductor packaging.

Abstract: The present invention discloses a rigid magnetic recording disk and a method of making the same. The substrate is formed by metallurgically bonding at least a first and second layer of clad materials. The hardness and mechanical strength of the first layer is substantially greater than the second layer. The first layer has a thickness which is from about 0.2% to about 20% the thickness of the second layer. The unbonded surface of the first layer is substantially flat and asperity free. The second layer is less dense than the first layer. A magnetic layer is deposited on the unbonded surface of the first layer.

Abstract: A semiconductor package for mounting a chip is disclosed. The package includes a first metal or metal alloy component having a first thin refractory oxide layer on a first surface. The chip is bonded to the first component. A skirt extends from the first component for strengthening the first component and providing heat transfer from the semiconductor package. A second metal or metal alloy lead frame having second and third refractory oxide layers on opposite surfaces is electrically connected to the chip and is bonded to the first oxide layer. Also, the lead frame is insulated from the first component by the first and second refractory oxide layers. A second metal or metal alloy component has a fourth refractory oxide layer on one surface and is bonded to the third refractory oxide layer so that the chip is hermetically sealed between the first and second components.

Abstract: A chip carrier and a process of assembling a chip carrier are disclosed. The carrier used for mounting a chip comprises a copper or copper base alloy component having a thin refractory oxide layer on a surface thereof. The surface and the oxide layer have an indentation formed therein for receiving the chip. A metallic circuit pattern for electrical connection to the chip is bonded to the oxide layer and insulated from the copper or copper base alloy by the refractory oxide layer. A seal is provided for enclosing the chip to the indentation. Another embodiment of the invention includes a circuit board structure comprising a circuit board device having a first coefficient of thermal expansion. A chip carrier is provided having a second coefficient thermal expansion of substantially the same value as the first coefficient of thermal expansion.

Abstract: A chip carrier and a process of assembling a chip carrier are disclosed. The carrier used for mounting a chip comprises a copper or copper base alloy component having a thin refractory oxide layer on a surface thereof. The surface and the oxide layer have an indentation formed therein for receiving the chip. A metallic circuit pattern for electrical connection to the chip is bonded to the oxide layer and insulated from the copper or copper base alloy by the refractory oxide layer. A seal is provided for enclosing the chip to the indentation. Another embodiment of the invention includes a circuit board structure comprising a circuit board device having a first coefficient of thermal expansion. A chip carrier is provided having a second coefficient thermal expansion of substantially the same value as the first coefficient of thermal expansion.

Abstract: A composite comprises a first metal or alloy component having a thin refractory oxide layer on a first surface thereof. A second metal or alloy component has a second thin refractory oxide on the first surface thereof. Means are provided having a closely matched coefficient of thermal expansion to the first and second metal or alloy components for bonding the first and second thin refractory oxide layers and for electrically insulating the first component from the second component whereby thermal stress between the metal or alloy components and the bonding means is substantially eliminated.

Abstract: The present invention is directed to an interconnect tape for TAB and electronic packages made from the tape. A heat dissipating pad positioned over the electrically active face of an electronic device transfers heat from the device to the electronic package or to an external heatsink. The tape leads, the heat dissipating pad and the support members for the heat dissipating pad are all formed from the same electrically conductive strip.

Abstract: A semiconductor package of the small outlined integrated circuit type is disclosed having an angled glass sealing surface. Another aspect of the invention relates to a shield disposed in a semiconductor package to prevent alpha radiation emitted from the sealing glass or other packaging components from impinging on the housed semiconductor device.

Abstract: Multi-layer circuitry incorporating electronic elements is disclosed. The circuitry comprises a plurality of layers including a metal or alloy substrate formed with a recess on one surface. An electronic element is positioned within the recess and a second electronic element is positioned on the surface. Also, a first dielectric material layer is disposed on the surface. Further, a first layered conductive circuit pattern overlies the first dielectric material layer so as to provide circuitry over a substantial portion of the substrate. The first circuit pattern is electrically connected to the first electronic element. The first circuit pattern also has a cavity therein for receiving the second electronic element. A second layered conductive pattern overlies at least a portion of the first layered conductive circuit pattern and the second electronic element and is electrically connected to the second electronic element.

Abstract: The present invention is directed to several embodiments of a hermetically sealed semiconductor package. One embodiment is constructed from a substrate of a first copper alloy, a cover member of a second copper alloy and a lead frame of a third copper alloy. A low melting point sealing glass composite is disposed between the cover member and the substrate for sealing the lead frame therebetween. The third copper alloy is precipitation hardenable and has excellent softening resistance at glass sealing temperatures as compared with other conventionally used alloys. In another embodiment, a clad composite having a core of the third copper alloy and cladding layer of a copper alloy having a low oxidation rate may be advantageously used for the lead frame.

Abstract: A composite is provided which is adaptable to be a substrate for an electronic application. The composite comprises first material particles having a coefficient of thermal expansion in the range of about -20.times.10.sup.-7 to about 50.times.10.sup.-7 in/in/.degree.C. Second material particles having a coefficient of thermal expansion in the range of about 100.times.10.sup.-7 to about 200.times.10.sup.-7 in/in/.degree.C. are mixed with the first material particles. A bonding agent adheres the first and second material particles into a coherent composite having a coefficient of thermal expansion in the range of about 1.times.10.sup.-7 to about 50.times.10.sup.-7 in/in/.degree.C.