Abstract: A hermetic semiconductor casing for an electrical component has a metal or metal alloy leadframe with first and second opposite surfaces each having a first refractory oxide layer thereon, which leadframe is adapted to have the electrical component connected thereto. The leadframe is bonded by means of a fired glass or ceramic to a metal or metal alloy base member. The base member has a relatively thin metal or metal alloy coating on at least the top surface and the sides thereof, with the coating having a desirable refractory oxide layer on the outer surface thereof. The leadframe is also bonded by means of a fired glass or ceramic to a metal or metal alloy cap member having a refractory oxide layer on the lower surface thereof. The coating on the base member allows use of a base member that has undesirable oxide forming characteristics.

Abstract: An improved hermetically sealed semiconductor casing and a process for producing the casing are disclosed. This casing includes a lead frame having an electrical device affixed thereto. A base member is glass bonded to a matching surface of the lead frame. A metal window frame shaped device is provided having one surface with a refractory oxide coating and a second opposite readily solderable surface. The refractory oxide layer of the window frame device is glass bonded to the lead frame and the base member. The semiconductor or electrical device is connected to the lead frame after the window frame has been glass bonded into place. A metal lid having a solderable surface is solder bonded to the solderable surface of the window frame to hermetically seal the electrical device within the casing.

Abstract: The present invention is directed to a process of forming a package for enclosing an electrical device wherein the enclosure contains a very low amount of oxygen and water vapor. The package includes a base and lid components bonded together by a sealing glass. The lid component contains a gettering alloy from which the oxide layer is removed prior to the final sealing of the package. The gettering alloy forms a refractory oxide layer under an oxide layer formed with the primary constituent of the alloy.

Abstract: The present invention relates to a process for forming improved bonds between components of electrical or electronic devices. The process of the present invention preferably comprises annealing a metallic substrate to form a substantially uniform, substantially continuous oxide layer on a surface of the substrate, exposing the oxidized substrate to a reducing atmosphere so as to form an irregular surface on the substrate, and bonding another component to the irregular surface.

Abstract: A semiconductor casing is formed of a ceramic-glass-metal composite material with a leadframe embedded in a base component. The leadframe may include holes therethrough to mechanically interlock with the composite material. Also, a process comprises forming a four-sided semiconductor casing having a leadframe with an aluminum cladding that is etched away at the ends extending from the casing.

Abstract: An electronic circuit assembly is disclosed including a semiconductor die having an aluminum therminal pad on its top surface. A lead frame is disposed adjacent the semiconductor die and is adapted to be electrically connected to the die. An electrical connection device interconnects the terminal pad to the lead frame. The electrical connection device includes a biclad transport tape comprising a first member formed from a nickel containing material and a second member formed from a copper containing material. The transport tape is disposed in the electronic circuit assembly with its first member bonded to the terminal pad and its second member bonded to the lead frame. The transport tape may be constructed so as to efficiently dissipate heat from the semiconductor die.

Abstract: Multi-layer circuitry incorporating electronic elements is disclosed. The circuitry comprises a plurality of layers including a metal or alloy substrate formed with a recess on one surface. An electronic element is positioned within the recess and a second electronic element is positioned on the surface. Also, a first dielectric material layer is disposed on the surface. Further, a first layered conductive circuit pattern overlies the first dielectric material layer so as to provide circuitry over a substantial portion of the substrate. The first circuit pattern is electrically connected to the first electronic element. The first circuit pattern also has a cavity therein for receiving the second electronic element. A second layered conductive pattern overlies at least a portion of the first layered conductive circuit pattern and the second electronic element and is electrically connected to the second electronic element.

Abstract: A composite is provided which is adaptable to be a substrate for an electronic application. The composite comprises first material particles having a coefficient of thermal expansion in the range of about -20.times.10.sup.-7 to about 50.times.10.sup.-7 in/in/.degree. C. Second material particles having a coefficient of thermal expansion in the range of about 100.times.10.sup.-7 to about 200.times.10.sup.-7 in/in/.degree. C. are mixed with the first material particles. A bonding agent adheres the first and second material particles into a coherent composite having a coefficient of thermal expansion in the range of about 1.times.10.sup.-7 to about 50.times.10.sup.-7 in/in/.degree. C.

Abstract: An improved hermetically sealed semiconductor casing and a process for producing the casing are disclosed. This casing includes a lead frame having an electrical device affixed thereto. A base member is glass bonded to a matching surface of the lead frame. A metal window frame shaped device is provided having one surface with a refractory oxide coating and a second opposite readily solderable surface. The refractory oxide layer of the window frame device is glass bonded to the lead frame and the base member. The semiconductor or electrical device is connected to the lead frame after the window frame has been glass bonded into place. A metal lid having a solderable surface is solder bonded to the solderable surface of the window frame to hermetically seal the electrical device within the casing.

Abstract: The present invention is directed to a communication cable having improved adhesion between metallic and non-metallic layers. The cable has a metallic core structure in which at least one optical fiber and/or electrical conductor is housed, at least one external layer fabricated from a non-metallic material and an adherent, plasma deposited polymeric film coating between the core structure and an external layer for improving the adhesion between the core structure and the external layer. A process and apparatus for fabricating the communication cable are also described.

Abstract: The present invention is directed to Tape Packages adapted to house semiconductor devices. The packages comprise a base component having a cover component disposed thereon to form an enclosure to house the semiconductor. A tape lead frame is disposed between the base and the cover and has a plurality of lead fingers extending into the enclosure for electrical connection to the semiconductor component. A spring between the base and the semiconductor device presses the semiconductor device into contact with the cover component. The spring comprises at least one of the lead fingers which is bonded to the semiconductor device and formed into an arch-like shape which contacts the base component.

Abstract: A casing for an electrical component comprises a metal lead frame having the electrical component connected thereto. A metal base member is bonded to one surface of the lead frame. A plastic housing member is bonded to a second surface of the lead frame. An adhesive seals and bonds the metal base member and plastic housing member to the lead frame so as to enclose the electrical component.

Abstract: A copper plastic laminate is provided having a high bond strength. The copper is selected from the group consisting of copper and copper alloys and has on its surface a uniform glassy-like, substantially pore-free coating of copper phosphate. A plastic encapsulating material containing a mold release agent is adhesively bonded to the copper.

Abstract: The present invention is directed to a hermetically sealed package adapted to form an enclosure for a semiconductor device. The package comprises a substrate with a refractory oxide layer on one surface and a metallized band on the refractory oxide layer. A metal cover is disposed on the substrate and sealed to the metallized band. A lead frame disposed between the substrate and cover comprises a plurality of lead elements which extend into the enclosure to be electrically connected to the semiconductor device. The lead frame has a refractory oxide layer on its surface to electrically insulate the lead frame from both the substrate and the cover. The lead frame also has a metallized band on its refractory oxide layer. A solder component bonds the cover onto the substrate with the lead frame extending therebetween so that the electronic device is sealed within the closure.

Abstract: A chip carrier and a process of assembling a chip carrier are disclosed. The carrier used for mounting a chip comprises a copper or copper base alloy component having a thin refractory oxide layer on a surface thereof. The surface and the oxide layer have an indentation formed therein for receiving the chip. A metallic circuit pattern for electrical connection to the chip is bonded to the oxide layer and insulated from the copper or copper base alloy by the refractory oxide layer. A seal is provided for enclosing the chip to the indentation. Another embodiment of the invention includes a circuit board structure comprising a circuit board device having a first coefficient of thermal expansion. A chip carrier is provided having a second coefficient thermal expansion of substantially the same value as the first coefficient of thermal expansion.

Abstract: A composite is provided which is adaptable to be a substrate for an electronic application. The composite comprises first material particles having a coefficient of thermal expansion in the range of about -20.times.10.sup.-7 to about 50.times.10.sup.-7 in/in/.degree.C. Second material particles having a coefficient of thermal expansion in the range of about 100.times.10.sup.-7 to about 200.times.10.sup.-7 in/in/.degree.C. are mixed with the first material particles. A bonding agent adheres the first and second material particles into a coherent composite having a coefficient of thermal expansion in the range of about 1.times.10.sup.-7 to about 50.times.10.sup.-7 in/in/.degree.C.

Abstract: Several embodiments of high density packages which form an enclosure adapted to receive electronic devices are disclosed. Each package includes a metal lead frame having staggered leads which extend external to the package. A seal ring construction is provided so that hermetic seals are possible without subjecting the electronic devices to high temperatures. Various metals and sealing materials are advantageously used in the contruction of the devices.

Abstract: Reinforced glass composites are disclosed which are useful in hermetic semiconductor packaging as well as other applications. The disclosed composites include discrete particles in a tin-phosphorous-oxyfluoride glass mixture having a low glass transition temperature to prevent serious degradation of the discrete particles.

Abstract: A copper plastic laminate is provided having a high bond strength. The copper is selected from the group consisting of copper and copper alloys and has on its surface a uniform glassy-like, substantially pore-free coating of copper phosphate. A plastic encapsulating material containing a mold release agent is adhesively bonded to the copper.

Abstract: Various embodiments of a casing adapted to receive an electronic device and in particular power discrete devices are disclosed. The casings include metal or metal alloy base components with the electronic device adhered to its surface. A metal or metal alloy leadframe is bonded to and electrically insulated from the base component. The electronic device is connected to the leadframe. A metal or metal alloy cover is bonded to the leadframe to seal the electronic device within the casing. Each of the modifications includes a technique for effectively removing the heat generated by the electronic device from the casing.