Abstract: A printed circuit board structure for a mobile terminal including a main printed circuit board including elements required for functions of the mobile terminal and mounted on an upper surface of the main printed circuit board, and an auxiliary printed circuit board laminated on the main printed circuit board including at least one element further required for the functions of the mobile terminal and mounted on an upper surface of the auxiliary printed circuit board.

Abstract: An embedded capacitor comprises a first substrate on which a plurality of electrically insulated electrode patterns and a ground pattern are formed, a second substrate separated from the first substrate, a plurality of dielectric layers stacked between the first and second substrates, a plurality of metal layers inserted between the dielectric layers and connected to the electrode patterns of the first substrate, and a plurality of ground layers inserted between the dielectric layers alternately with the metal layers.

Abstract: A semiconductor optical package for optical communication includes a cooling plate dissipating internal heat generated from the semiconductor optical package and having one or more grooves passing through top and bottom surfaces thereof. There is a housing having one or more slots formed on its bottom face, the housing at least partly enclosing an optical transmission module resting on the cooling plate such that the respective slots thereof correspond to the respective grooves of the cooling plate. There are also one or more screws passing through the grooves and inserted into the slots for coupling the housing to the optical transmission module.

Abstract: A Fabry-Perot laser generates a mode-locked channel having the same wavelength as that of light injected into the laser. The laser includes a semiconductor substrate and a lower cladding layer formed on the substrate. An active layer is formed on the lower cladding layer and has a band gap distribution that continuously varies in a longitudinal direction of the substrate. The laser further includes an upper cladding layer formed on the active layer and the lower cladding layer.

Abstract: Disclosed is an optical module of an isolator structure including a semiconductor laser, a polarizer, and a Faraday rotator. The laser outputs a first linearly-polarized beam of a predetermined polarization mode. The polarizer is positioned to face an end of the laser, and its polarization axis is tilted at a 45° angle with respect to the polarization direction of the first beam. The Faraday rotator is disposed between the laser and the polarizer, and rotate the polarization direction of the first beam by 45° to substantially coincide with the polarization axis of the polarizer, and then output it to the polarizer, and to rotate a second beam from the polarizer by 45°, wherein the second beam has a polarization mode polarized perpendicular to the first beam, and then output it to the semiconductor laser.

Abstract: Disclosed is an optical module of an isolator structure including a semiconductor laser, a polarizer, and a Faraday rotator. The laser outputs a first linearly-polarized beam of a predetermined polarization mode. The polarizer is positioned to face an end of the laser, and its polarization axis is tilted at a 45° angle with respect to the polarization direction of the first beam. The Faraday rotator is disposed between the laser and the polarizer, and rotate the polarization direction of the first beam by 45° to substantially coincide with the polarization axis of the polarizer, and then output it to the polarizer, and to rotate a second beam from the polarizer by 45°, wherein the second beam has a polarization mode polarized perpendicular to the first beam, and then output it to the semiconductor laser.

Abstract: A semiconductor monolithic integrated optical transmitter including a plurality of active layers formed on a semiconductor substrate is disclosed, which comprises: a distributed feedback laser diode including a grating for reflecting light with a predetermined wavelength and a first active layer for oscillating received light from the grating; an electro-absorption modulator including a second active layer for receiving light from the first active layer, wherein the received light intensity is modulated through a change of absorbency in accordance with an applied voltage; an optical amplifier including a third active layer for amplifying received light from the second active layer; a first optical attenuator between the first active layer and the second active layer; and a second optical attenuator between the second active layer and the third active layer.

Abstract: An optical communication module is disclosed. The optical communication module includes a thermistor, which may be plate shaped, having a positive temperature coefficient. The resistance of the thermistor increases according to an increase of the environmental temperature. The optical communication module also includes a semiconductor chip mounted on the upper surface of the thermistor, and a driving means for applying a predetermined voltage to the thermistor.

Abstract: An integrated optical apparatus is disclosed that integrates at least two optical devices and can achieve electrical and optical insulation between the optical devices. The integrated optical apparatus includes at least two optical devices both equipped with an optical waveguide, and at least one inner window interposed at a region of the optical waveguide between the optical devices. The inner window disconnects the optical waveguides that are located between the optical devices in order to achieve optical/electrical insulation. According to aspects and embodiments of the present invention, production costs can be reduced because it is not required to employ an independent optical isolator separately in order to achieve optical insulation between the respective optical devices, and process times can be reduced because it is not necessary to control an optical coupling between the optical devices.

Abstract: A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.

Abstract: A semiconductor light emitting device including means for reducing strain and carrier overflow caused by injection of a number of carriers in semiconductor light emitting devices using GaN is provided. The semiconductor light emitting device includes a multi-quantum barrier formed by depositing an AlGaN/GaN double layer a predetermined number of times, or a strain-compensating multiple quantum barrier formed at either the upper or lower sides of an active layer by depositing an AlGaN/InGaN double layer a predetermined number of times, and does not need a p-type clad layer.