Abstract: A probe mark reading device for reading probe marks stormed on electrode pads of semiconductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.

Abstract: A probe apparatus with control-position detection means is provided for testing an electrical characteristic of a to-be-tested object formed on a substrate W. The probe apparatus includes a prober chamber, a susceptor provided in the prober chamber for placing thereon a to-be-tested object, and a moving mechanism for moving the susceptor in X-, Y-, Z- and ?-directions. The probe apparatus further includes a probe card having a plurality of probes and opposing the susceptor, and a first optical length-measuring unit. The first length-measuring unit emits light to the surface of the to-be-tested object placed on the susceptor, and detects the Z-directional position of the to-be-tested object based on the light reflected from the object. The probe apparatus can have a second length-measuring unit.

Abstract: At least one pair of electrode formed on a mounting surface of a stage is in contact with a conductive layer formed on a first surface of an inspection object, and an electrical path is formed between the both by using a fritting phenomenon.

Abstract: An inspection method including measuring a height of a load cell of a load detecting mechanism using a laser length measuring mechanism, obtaining a first rise amount of the load detecting mechanism from a measuring position of the load detecting mechanism up to a contact starting position, measuring a height of an electrode of a wafer using the laser length measuring mechanism, and obtaining a second rise amount of a main chuck up to the contact starting point of the electrode with the probe based on a difference between a measuring height of the electrode of the wafer and the measuring height of the load detecting mechanism.

Abstract: An inspection method including measuring a height of a load cell of a load detecting mechanism using a laser length measuring mechanism, obtaining a first rise amount of the load detecting mechanism from a measuring position of the load detecting mechanism up to a contact starting position, measuring a height of an electrode of a wafer using the laser length measuring mechanism, and obtaining a second rise amount of a main chuck up to the contact starting point of the electrode with the probe based on a difference between a measuring height of the electrode of the wafer and the measuring height of the load detecting mechanism.

Abstract: At least one pair of electrode formed on a mounting surface of a stage is in contact with a conductive layer formed on a first surface of an inspection object, and an electrical path is formed between the both by using a fritting phenomenon.

Abstract: A probe mark reading device for reading probe marks stormed on electrode pads of semi conductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.

Abstract: An inspection method including measuring a height of a load cell of a load detecting mechanism using a laser length measuring mechanism, obtaining a first rise amount of the load detecting mechanism from a measuring position of the load detecting mechanism up to a contact starting position, measuring a height of an electrode of a wafer using the laser length measuring mechanism, and obtaining a second rise amount of a main chuck up to the contact starting point of the electrode with the probe based on a difference between a measuring height of the electrode of the wafer and the measuring height of the load detecting mechanism.

Abstract: A probe mark reading device for reading probe marks stormed on electrode pads of semiconductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.

Abstract: In an inspection method according to the invention, a plurality of drivers 21 incorporated in a tester 20 apply a fritting voltage to respective electrodes P via first probe pins 11A included in pairs of first and second probe pins 11A and 11B and connected to the respective drivers.

Abstract: A probe apparatus with control-position detection means is provided for testing an electrical characteristic of a to-be-tested object formed on a substrate W. The probe apparatus includes a prober chamber, a susceptor provided in the prober chamber for placing thereon a to-be-tested object, and a moving mechanism for moving the susceptor in X-, Y-, Z- and ?-directions. The probe apparatus further includes a probe card having a plurality of probes and opposing the susceptor, and a first optical length-measuring unit. The first length-measuring unit emits light to the surface of the to-be-tested object placed on the susceptor, and detects the Z-directional position of the to-be-tested object based on the light reflected from the object. The probe apparatus can have a second length-measuring unit.

Abstract: A probe method of this invention includes a step of reducing an electrode of a wafer by using a forming gas, and a step of bringing the electrode and a probe pin into contact with each other in a dry atmosphere. The probe method further includes, prior to a reducing process of an electrode of the object to be tested, placing the object to be tested in an inert gas atmosphere and heating the object to be tested. The reducing process is performed by bringing a reducing gas into contact with the electrode of the object to be tested under atmospheric pressure.

Abstract: A probe mark reading device for reading probe marks stormed on electrode pads of semiconductor chips contained in a semiconductor wafer (90), comprising a CCD camera (20) for taking an image of the semiconductor wafer (90) and outputting the image as an image signal Si, an optical unit (21) for optically enlarging a location to be photographed by the CCD camera (20), a light source (30) for illuminating the location to be photographed by the CCD camera (20) with a flash of light generated for a short period of time from when a flash signal Sf is provided, an X-Y stage (40) capable of changing a position to be photographed by the CCD camera (20) based on a motor control signal Sm by moving a mounted semiconductor wafer (90) in an X-direction and a Y-direction, and a computer (10) for providing control and saving the images after receiving and trimming the image signal Si. With the above configuration, it is possible to read probe marks in a short time without a user having to expend much time or effort.