Abstract: An exposure apparatus illuminates a pattern with an energy beam and transfers the pattern onto a substrate via a projection optical system. The exposure apparatus includes a substrate stage on which the substrate is mounted that moves within a two-dimensional plane holding the substrate. The apparatus also includes a supply mechanism that supplies liquid to a predetermined spatial area which includes a space between the projection optical system and the substrate on the substrate stage, and an adjustment unit that adjusts exposure conditions based on temperature information on the liquid between the projection optical system and the substrate.

Abstract: An exposure apparatus illuminates a pattern with an energy beam and transfers the pattern onto a substrate via a projection optical system. The exposure apparatus includes a substrate stage on which the substrate is mounted and that moves within a two-dimensional plane holding the substrate. In addition, a supply mechanism supplies liquid to locally fill a space between the projection optical system and the substrate on the substrate stage with the liquid, and a recovery mechanism recovers the liquid. A plate is provided in at least a part of the periphery of a mounted area of the substrate on the substrate stage. The plate has a surface arranged at substantially the same height as a surface of the substrate mounted on the substrate stage.

Abstract: An exposure apparatus (EX) is an apparatus which exposes a substrate (P) by irradiating exposure light (EL) onto the substrate (P) via a projection optical system (PL) and a liquid (1). The exposure apparatus (EX) has a substrate table (PT) for holding the substrate (P), and a plate member (30) having a liquid repellent flat surface (30A) is replaceably provided to the substrate table (PT) to prevent the liquid from remaining, maintaining excellent exposure accuracy.

Abstract: An exposure apparatus performs exposure for a substrate by filling a space between a projection optical system and the substrate with a liquid and projecting an image of a pattern onto the substrate through the liquid by using the projection optical system. The exposure apparatus includes a substrate stage for holding the substrate, a liquid supply unit for supplying the liquid to a side of an image plane of the projection optical system, and a focus/leveling-detecting system for detecting surface information about a surface of the substrate not through the liquid. The exposure apparatus performs liquid immersion exposure for the substrate while adjusting a positional relationship between the surface of the substrate and the image plane formed through the projection optical system and the liquid, on the basis of the surface information detected by the focus/leveling-detecting system. The liquid immersion exposure can be performed at a satisfactory pattern transfer accuracy.

Abstract: An exposure apparatus includes a projection optical system for projecting a pattern on a reticle onto an object to be exposed. The apparatus also includes a reference mark that serves as a reference for an alignment between the reticle and the object. The apparatus also includes a first fluid that has a refractive index of 1 or greater, and fills a space between at least part of said projection optical system and the object and a space between at least part of said projection optical system and the reference mark. In addition, an alignment mechanism aligns the object by using said projection optical system and the first fluid.

Abstract: Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).

Abstract: In exposing substrate by projecting an image of a pattern onto substrate via projection optical system and liquid, side surface and underside surface of substrate are applied with liquid-repellent treatment. By such a configuration, an exposure method by which when exposing edge areas of the substrate, the exposure can be performed in a condition that a liquid immersion region is formed well and that flowing out of the liquid to the outside of the substrate stage are prevented is provided.

Abstract: Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).

Abstract: When a pattern is transferred via a projection optical system, a size of an image of the pattern varies depending on a defocus amount of a transferring position from the best focus position, and a flucuation curve showing the variation (the so-called CD-focus curve) varies depending on wavefront aberration of the projection optical system. There is a close relation between a linear combination value of a plurality of terms that each have a coefficient (an aberration component) of a plurality of Zernike terms (aberration component terms) into which the wavefront aberration of the projection optical system is decomposed using a Zernike polynomial in series expansion, and the variation of the flucuation curve.

Abstract: A lithographic projection apparatus includes a support structure configured to hold a patterning device, the patterning device configured to pattern a beam of radiation according to a desired pattern, a substrate table configured to hold a substrate, and a projection system configured to project the patterned beam onto a target portion of the substrate. In addition, a liquid supply system includes a container at least partly defining a space between the projection system and the substrate, the container having a selectively openable and closeable aperture therein, the aperture having an area smaller than an area of the substrate, the patterned beam capable of being projected through liquid in the space and the aperture onto the substrate, and a closure is configured to selectively close and open the aperture.

Abstract: An exposure apparatus performs exposure for a substrate by filling a space between a projection optical system and the substrate with a liquid and projecting an image of a pattern onto the substrate through the liquid by using the projection optical system. The exposure apparatus includes a substrate stage for holding the substrate, a liquid supply unit for supplying the liquid to a side of an image plane of the projection optical system, and a focus/leveling-detecting system for detecting surface information about a surface of the substrate not through the liquid. The exposure apparatus performs liquid immersion exposure for the substrate while adjusting a positional relationship between the surface of the substrate and the image plane formed through the projection optical system and the liquid, on the basis of the surface information detected by the focus/leveling-detecting system. The liquid immersion exposure can be performed at a satisfactory pattern transfer accuracy.

Abstract: In exposing substrate by projecting an image of a pattern onto substrate via projection optical system and liquid, side surface and underside surface of substrate are applied with liquid-repellent treatment. By such a configuration, an exposure method by which when exposing edge areas of the substrate, the exposure can be performed in a condition that a liquid immersion region is formed well and that flowing out of the liquid to the outside of the substrate stage are prevented is provided.

Abstract: A lithographic projection apparatus includes an illumination system arranged to condition a radiation beam, a support structure configured to hold a patterning device, the patterning device being capable of imparting the radiation beam with a pattern, a substrate table configured to hold a substrate, and a projection system arranged to project the patterned radiation beam onto a target portion of the substrate. In addition, a liquid supply system is configured to at least partly fill a space between the projection system and an object on the substrate table, with a liquid, and a measurement device is configured to obtain a pressure of liquid in the space.

Abstract: In a lithographic projection apparatus includes an illumination system arranged to condition a radiation beam, a support structure configured to hold a patterning device, the patterning device being capable of imparting the radiation beam with a pattern, a substrate table configured to hold a substrate, and a projection system arranged to project the patterned radiation beam onto a target portion of the substrate. In addition, a liquid supply system is configured to provide a liquid to a space between the projection system and the substrate, the liquid supply system having a member extending along at least part of the boundary of the space, wherein the member has a liquid inlet which faces the substrate.

Abstract: Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).

Abstract: A liquid immersion photolithography system has an exposure system that exposes a substrate with electromagnetic radiation and includes a projection optical system that focuses the electromagnetic radiation on the substrate. A liquid supply system provides liquid flow between the projection optical system and the substrate. In addition, a plurality of nozzles are arranged so as to provide a substantially uniform velocity distribution of the liquid flow between the substrate and the projection optical system.

Abstract: An exposure method forms an immersion area in at least a part of a substrate including a projection area of a projection optical system and projects an image of a mask pattern onto the substrate through liquid between the projection optical system and the substrate. Distribution of the mask pattern is measured (S1) and adjustment is made so that a desired image of the pattern is projected onto the substrate according to distribution of the exposure light incident into the liquid between the projection optical system and the substrate when exposing the substrate (S4 to S6). It is possible to expose the substrate with the pattern accurately regardless of the distribution of the mask pattern.

Abstract: An exposure method and apparatus simultaneously transfer patterns with various pitches with high resolution. On the pupil surface of an illumination system, nine areas are set. The nine areas are a first area including the optical axis, four second areas each smaller than the first area and arranged along a first circumference surrounding the first area, and four third areas each smaller than the first area and arranged along a second circumference surrounding the first circumference and arranged along a second circumference. The distribution of intensity of light over the pupil surface is so set that the intensities of light over the nine areas are approximately equal to one another, and the intensity of light over the other area is smaller than those over the nine areas. This distribution of intensity of light is set using a diffraction optical element or a diaphragm.

Abstract: Based on adjustment information on the adjustment unit under predetermined exposure conditions and information on the corresponding image-forming performance of the projection optical system, pattern correction information, information on a permissible range of the image-forming performance, and the like, a calculation step (steps 114 to 118) and a setting step (steps 120, 124, and 126) are repeatedly performed in the case an image-forming performance in at least one exposure apparatus is outside the permissible range under the target exposure conditions until the image-forming performance in all the exposure apparatus is within the permissible range.

Abstract: Liquid is supplied by a supply mechanism to a space between a lens and a wafer via a supply nozzle on one side of the lens, and the liquid is recovered by a recovery mechanism via a recovery pipe on the other side of the lens. When the supply and the recovery of the liquid are performed in parallel, a predetermined amount of liquid (exchanged at all times) is held between the lens and the substrate on the stage. Accordingly, when exposure (pattern transfer on the substrate) is performed in this state, an immersion method is applied and a pattern is transferred with good precision onto the substrate. In addition, in the case the liquid leaks out from under the lower edge of a peripheral wall, the liquid that could not be recovered is recovered by an auxiliary recovery mechanism via a slit. And, by such operations, the substrate is freed from the residual liquid on the substrate.