Abstract: An exposure apparatus performs exposure for a substrate by filling a space between a projection optical system and the substrate with a liquid and projecting an image of a pattern onto the substrate through the liquid by using the projection optical system. The exposure apparatus includes a substrate stage for holding the substrate, a liquid supply unit for supplying the liquid to a side of an image plane of the projection optical system, and a focus/leveling-detecting system for detecting surface information about a surface of the substrate not through the liquid. The exposure apparatus performs liquid immersion exposure for the substrate while adjusting a positional relationship between the surface of the substrate and the image plane formed through the projection optical system and the liquid, on the basis of the surface information detected by the focus/leveling-detecting system. The liquid immersion exposure can be performed at a satisfactory pattern transfer accuracy.

Abstract: A second communications server obtains adjustment information of an adjustment unit in an exposure apparatus and information related to image forming quality (such as wavefront aberration) of a projection optical system under an exposure condition that serves as a reference, via a first communications server, and then calculates an optimal adjustment amount of the adjustment unit under a target exposure condition based on the information. In addition, the second communications server obtains adjustment information of the adjustment and actual measurement data of image forming quality of the projection optical system via the first communications server, and then calculates the optimal adjustment amount of the adjustment unit under the target exposure condition based on the information. And, the second communications server controls the adjustment unit in the exposure apparatus via the first communications server, based on the calculations results.

Abstract: Wavefront aberration of a projection optical system is measured and information on the wavefront aberration is obtained (step 102). Furthermore, a pattern of a reticle is transferred onto a wafer via a projection optical system (steps 104 to 108). Then, the waver on which the pattern is transferred is developed, and line width measurement is performed on the resist image formed on the wafer and line width difference of images of a first line pattern extending in a predetermined direction and a second line pattern that is orthogonal to the first line pattern is measured (steps 112 to 118). And, according to a value of the 12th term of the Zernike polynomial, which is an expansion of the wavefront aberration, and the line width difference, the projection optical system is adjusted so that magnitude of the 9th term (a low order spherical aberration term) is controlled (steps 120 to 124).

Abstract: An exposure apparatus with optimum illumination conditions without dependence on the directionality of the fine pattern on a reticle comprises an illumination optical system for illuminating a reticle having a pattern to be transferred and a projection optical system for projecting and transforming the reticle pattern on a substrate. The illumination optical system has pupil shape forming unit for forming four substantially planar light sources on the plane in the vicinity of its pupil. These four substantially planar light sources are arranged at each substantial vertices of a narrow rectangle whose barycenter is located on the illumination optical axis.

Abstract: A projection optical system and method projects and forms an image of a pattern arrayed on a first surface (mask), and exhibiting a periodicity in a predetermined direction (X- or Y-direction), on a second surface (wafer). A stop has an aperture showing a line symmetry with respect to a symmetric axis intersecting an optical axis of the projection optical system and extending in a direction (Y- or X-direction) orthogonal to the predetermined direction and having the outline at least a part of which are rectilinear portions. The stop is disposed on a Fourier transform plane of the first surface within the projection optical system or a surface in the vicinity thereof.

Abstract: An exposure method for forming on a wafer coated with a photo resist device patterns comprised of dense patterns and isolated patterns as components, including a first step of transferring first patterns comprised of dense patterns of shapes corresponding to the device patterns and dense patterns formed by patterns of shapes corresponding to the isolated patterns of the device patterns plus a plurality of auxiliary patterns on the wafer by ½ of the appropriate amount of exposure as determined by the sensitivity of the photo resist, and a second step of transferring second patterns comprised of dense patterns of shapes corresponding to the dense patterns of the device patterns and isolated patterns of shapes corresponding to the isolated patterns of the device patterns on the photosensitive substrate by ½ of the appropriate amount of exposure.

Abstract: An exposure apparatus with optimum illumination conditions without dependence on the directionality of the fine pattern on a reticle comprises an illumination optical system for illuminating a reticle having a pattern to be transferred and a projection optical system for projecting and transforming the reticle pattern on a substrate. The illumination optical system has pupil shape forming unit for forming four substantially planar light sources on the plane in the vicinity of its pupil. These four substantially planar light sources are arranged at each substantial vertices of a narrow rectangle whose barycenter is located on the illumination optical axis.

Abstract: A photo mask for lithography process form a high contrast image. The photo mask includes a light transparent portion and a light shielding portion, at least a part of which has a multilayer construction, wherein an the edge portion of the shielding portion has a different light transmissivity than a central portion surrounded by the edge portion.

Abstract: A reticle pattern is split into a first pattern which defines a configuration in the shorter dimension (X direction) and a second pattern which defines a configuration in the longer dimension (Y direction). The length in the longer dimension of each light-blocking pattern element of the first pattern is set longer than the length in the Y direction of the original reticle pattern. The second pattern has two opening pattern elements arrayed in the Y direction at a predetermined interval. The interval is set to a distance which is not shorter than the length in the Y direction of the original reticle pattern and is shorter than the length of each light-blocking pattern element. The image of the first pattern and the image of the second pattern are superimposed on one another by overlay exposure.

Abstract: A projection-exposing apparatus has a mask which has a pattern formed with a pitch PR, an illuminating optical system for applying illuminating light from a light source to the mask, a projection optical system for projecting an image of the pattern onto a photosensitive substrate, and a deflecting grating member formed with a pitch PG disposed between the light source and the pattern of the mask for generating diffracted light. The pitch PG of the deflecting grating member is defined in the relation PG=2PR. The diffraction grating member is remote from the pattern on the mask by a distance &Dgr;t, where &Dgr;t≧PG/2NAIL, NAIL being the numerical aperture of the illumination optical system.

Abstract: A photo mask for a lithography process enables the formation of high contrast image and facilitates manufacturing. The photo mask includes a transparent portion for an illumination light and a half-transparent part having a predetermined transmittance for the illumination light. These transparent and half-transparent portions are so constructed that a phase of a transmitted light beam from the half-transparent portion has a phase difference of 2 n.pi. or (2 n+1).pi. radian relative to a light beam passed through a transparent portion. Another type of photo mask includes transparent portion for the illumination light and a light shielding portion against the illumination light. At least a part of the shielding portion has a multilayer construction. An edge at least portion of the shielding portion has a different transmittance for the illumination light then a central portion surrounded by the edge portion.

Abstract: A projection exposure apparatus which can perform superior observation or projection of a selected mark when the mark is observed or projected through a projection optical system in which a pupil filter is set. The projection exposure apparatus which projects a pattern on a mask through a projection optical system onto a photosensitive substrate held on a substrate stage movable in a plane perpendicular to the optical axis of the projection optical system and which has a pupil filter (optical correction plate) placed on or near the pupil plane of the projection optical system, a reference mark formed on the substrate stage in a scale factor according to the shape of the pupil filter, illuminating means for illuminating the reference mark with illumination light, and light-receiving means for receiving the illumination light having emerged from the reference mark and thereafter having passed the projection optical system.

Abstract: A method and apparatus for determining performance characteristics in lithographic tools includes projecting a predetermined image with a projection system having a known predetermined performance characteristic to obtain data indicative of the relationship between the size of the projected image and the predetermined performance characteristic. The same image is then projected in a system having an unknown value for the predetermined performance characteristic. The predetermined performance characteristic for the system under consideration is then determined based on the data obtained when the image was projected in the system having the known predetermined performance characteristic.

Abstract: A substrate has a plurality of areas, from which several specific areas are selected. The coordinate positions of the specific areas on a static coordinate system are measured and the coordinate positions of the specific areas on the static coordinate system are calculated by the statistic calculation. For the respective specific areas, the calculated coordinate positions are subtracted from the measured coordinate positions to obtain the respective nonlinear position errors of the specific areas. When there is a peculiar area where the nonlinear position error exceeds an allowed value, the coordinate position of at least one area around the peculiar area is measured to obtain the nonlinear position error thereof.

Abstract: A projection-exposing apparatus has a mask which has a pattern formed with a pitch P.sub.R, an illuminating optical system for applying illuminating light from a light source to the mask, a projection optical system for projecting an image of the pattern onto a photosensitive substrate, and a deflecting grating member formed with a pitch P.sub.G disposed between the light source and the pattern of the mask for generating diffracted light. The pitch P.sub.G of the deflecting grating member is defined in the relation P.sub.G =2P.sub.R. The diffraction grating member is remote from the pattern on the mask by a distance .DELTA.t, where .DELTA.t .gtoreq.P.sub.G /2NA.sub.IL, NA.sub.IL being the numerical aperture of the illumination optical system.

Abstract: A method of exposing images of measuring patterns formed on a mask on a photosensitive substrate through a projection optical system, measuring positional deviation quantities of the exposed images of the measuring patterns in a measuring direction and thus measuring imaging characteristics of the projection optical system on the basis of the measured positional deviation quantities. In this method, periodic patterns are used as the measuring patterns, wherein bright and dark portions are arranged at a predetermined pitch in a direction corresponding to the measuring direction. The positional deviation quantity is measured by assuming the image of the periodic pattern as an image of the pattern consisting of the single dark portion on the whole when measuring the positional deviation quantity of the periodic pattern image exposed on the photosensitive substrate in the measuring direction.

Abstract: Measured is a coordinate position, on a static coordinate system, of each of some specified areas selected from a plurality of areas on a substrate. The coordinate positions of some specified areas undergo a weighted averaging process by use of such a weight that it decreases with a larger distance between the specified areas. The coordinate position is thereby smoothed per specified area. The weight is given to each of some smoothed coordinate positions, and, thereafter, a statistic calculation is effected. The coordinate position, on the static coordinate system, of the area on the substrate is thereby obtained. The substrate is sequentially located based on the obtained coordinate position, and each area on the substrate is thus aligned to a predetermined position.

Abstract: A projection exposure apparatus comprising:an illumination, optical system for irradiating a mask with illumination light;a projection optical system for projecting an image of a pattern formed on the mask onto a substrate;an optical member for defining a light quantity distribution of the illumination light on a Fourier transform plane to the pattern on the mask in the illumination optical system or on a plane in the vicinity thereof such that the illumination light is intensified in a first region inside a substantial circle of radius r.sub.1 with the center on the optical axis of the illumination optical system and in a second region formed as a substantially annular zone bordered by a substantial circle of radius r.sub.2 and a substantial circle of radius r.sub.3 (where r.sub.1 .ltoreq.r.sub.2 <r.sub.

Abstract: A method of aligning each of a plurality of processing areas regularly aligned on a substrate according to designed alignment coordinates to a predetermined reference position in a static coordinate system for defining the moving position of the substrate is disclosed. The coordinate positions, on the static coordinate system, of at least three processing areas selected in advance as specific processing areas from the plurality of processing areas are measured. The coordinate positions, on the static coordinate system, of the plurality of processing areas on the substrate are determined by weighting the coordinate positions, on the static coordinate system, of the at least three specific processing areas according to the distances between a processing area of interest and each of the at least three specific processing areas in units of processing areas on the substrate, and executing a statistic calculation using the plurality of weighted coordinate positions.

Abstract: An alignment method for aligning each of plural process areas arranged on a substrate to a specified point in a fixed coordinate system defining a position of movement of the substrate, comprises measuring the positions of a number of specified areas, selected in advance from the plural process areas on the substrate; determining plural amounts of deformation between the specified areas and one of the process areas; determining plural weighting coefficients corresponding to the plural amounts of distortion, for each of the specified areas; and calculating the coordinate position of the one of the process areas on the fixed coordinate system, by statistical processing of the measured coordinate positions of the specified areas, utilizing the plural weighting coefficients.