Abstract: A current applying device is provided in which a contact body which surface-contacts with an inspection target body makes contact with the surface of the inspection target body uniformly; current can be favorably applied from the contact body to the inspection target body; and the contact body alone can be replaced. A probe device 1 for applying current by being in pressure-contact with the power semiconductor H includes: a contact body 2 which surface-contacts with the power semiconductor H; and a plurality of electrically-conductive two-tier springs 31 which press the contact body 2 onto the power semiconductor H; the contact body 2 and the plurality of electrically-conductive two-tier springs 31 are separate bodies, and the plurality of electrically-conductive two-tier springs 31 electrify the contact body 2 while providing pressing force F to each of a plurality of sections of the contact body 2.

Abstract: Provided are a current application device capable of improving the electrical contact between projections of a contact section and a surface electrode when applying a test current to a semiconductor element, and a method of manufacturing a semiconductor element properly tested by using the current application device. The current application device includes a contact section that has a plurality of projections, which are brought into contact with a surface electrode of a semiconductor element to apply a test current, and a pressing section that presses the contact section against the semiconductor element such that the projections penetrate a film to come in contact with the surface electrode. The contact section has a plurality of the projections on a plane that has been formed in a curved shape, and the curved-shaped plane is deformed into a planar shape by being pressed by the pressing section.

Abstract: A parallelism adjusting device and a parallelism adjusting method capable of adjusting the parallelism between the surface of a semiconductor and the surface of an electrode by reducing the load on the semiconductor and capable of shortening the cycle time by increasing the operating speed. A probe device of adjusting the parallelism between the surface and the surface of a contact body that is in contact with the surface to press the surface and apply a current is configured to include a pressing body assembly that presses the contact body with a predetermined pressing force until the surface and the surface come into contact with each other to adjust the parallelism and, after that, presses the contact body with a pressing force that is stronger than the predetermined pressing force.

Abstract: An electric current application method for applying electric current to a power semiconductor 100 having a first signal pin contact region 102 that conducts a first electric current, and a contacting body contact region 101 that electrically connects with the first signal pin contact region 102 and conducts a second electric current, includes a Step S1 of contacting a first signal pin 32 of a probe device 1 to the first signal pin contact region 102 so as to eliminate residual electricity remaining in the first signal pin contact region 102 and contacting body contact region 101; and Steps S3 and S4 of contacting a contacting part 21 of the contacting body 2 of the probe device 1 to the contacting body contact region 101, and conducting the first electric current and second electric current, after Step S1.

Abstract: A current applying device in which a contact electrode is destroyed firstly when a large current is applied in the event of failure.

Abstract: Provided is a current application device capable of applying a test current of a magnitude necessary for testing of a semiconductor element without any trouble. A current application device 1 is configured to have a contacting section having a plurality of projections 21 for contacting a contact region 24 inside an active region 23 of a semiconductor element 22 and applying the test current thereto, and a pressing section 3 which presses the contacting section 2 against the semiconductor element 22 such that each projection 21 contacts the contact region 24. A plurality of the projections 21 are arranged such that an arrangement density of outside projections 21 is larger than the arrangement density of inside projections 21.

Abstract: A semiconductor inspection device (1) equipped with a contacting unit (7) having a contacting side surface (7a) electrically contacting a semiconductor element (3), and which inspects the semiconductor element (3) by making the contacting unit (7) electrically contact the semiconductor element (3). The contacting side surface (7a) is provided with a plurality of projecting units (13), and the semiconductor element inspection device (1) is equipped with a hitting mark detecting unit (11) configured to detect hitting marks of the projecting unit (13) transferred to the semiconductor element (3) when the contacting side surface (7a) contacts the semiconductor element (3), and a control unit (17) configured to determine whether or not an inspection of the semiconductor element (3) is performed appropriately, on the basis of the hitting marks detected by the hitting mark detecting unit (11).

Abstract: A current applying device is provided in which a contact body which surface-contacts with an inspection target body makes contact with the surface of the inspection target body uniformly; current can be favorably applied from the contact body to the inspection target body; and the contact body alone can be replaced. A probe device 1 for applying current by being in pressure-contact with the power semiconductor H includes: a contact body 2 which surface-contacts with the power semiconductor H; and a plurality of electrically-conductive two-tier springs 31 which press the contact body 2 onto the power semiconductor H; the contact body 2 and the plurality of electrically-conductive two-tier springs 31 are separate bodies, and the plurality of electrically-conductive two-tier springs 31 electrify the contact body 2 while providing pressing force F to each of a plurality of sections of the contact body 2.

Abstract: An angular velocity measuring device (1) includes a first sensor (2) (vibration gyro) and a second sensor (3) (gas rate gyro). The detection output of the first sensor (2) is inputted to a high pass filter (4). Output of the filter (4) is stored and held in time series in a memory (10). Subtraction processing means (11) successively executes processing of subtracting the output of the filter (4) ?v?(t?tsd) before a predetermined time tsd from the output of the filter (4) ?v?(1). The value thus obtained is successively added to the output of the second sensor (3) ?g(t) by addition processing means (12) so as to obtain the measurement value of the angular velocity. Thus, it is possible to provide an angular velocity measuring device capable of giving an angular velocity measurement value having a high response and stability at a reasonable cost.

Abstract: An angular velocity measuring device (1) includes a first sensor (2) (vibratory gyroscope) and a second sensor (3) (gas rate gyroscope). A detected output of the first sensor (2) is input to a highpass filter (4) and an output of this filter (4) is stored in the time series into a memory (10). Subtraction means (11) sequentially performs operations of subtracting an output ?v?(t?tsd) of the filter (4) at a time a predetermined time period tsd earlier from an output ?v?(t) of the filter (4), and addition means (12) sequentially adds the value obtained by the above to an output ?g(t) of the second sensor (3), whereby an angular velocity measurement is obtained. Thereby, it is possible to provide an angular velocity measuring device whose angular velocity measurements are high in response and stability at a low price.