Abstract: A semiconductor device structure and a method for forming a semiconductor device structure are provided. The semiconductor device structure includes a stack of channel structures over a base structure. The semiconductor device structure also includes a first epitaxial structure and a second epitaxial structure sandwiching the channel structures. The semiconductor device structure further includes a gate stack wrapped around each of the channel structures and a backside conductive contact connected to the second epitaxial structure. A first portion of the backside conductive contact is directly below the base structure, and a second portion of the backside conductive contact extends upwards to approach a bottom surface of the second epitaxial structure. In addition, the semiconductor device structure includes an insulating spacer between a sidewall of the base structure and the backside conductive contact.

Abstract: A flyback power converter includes a power transformer, a first lossless voltage conversion circuit, a first low-dropout linear regulator and a secondary side power supply circuit. The first low-dropout linear regulator (LDO) generates a first operation voltage as power supply for being supplied to a sub-operation circuit. The secondary side power supply circuit includes a second lossless voltage conversion circuit and a second LDO. The second LDO generates a second operation voltage. The first operation voltage and the second operation voltage are shunted to a common node. When a first lossless conversion voltage is greater than a first threshold voltage, the second LDO is enabled to generate the second operation voltage to replace the first operation voltage as power supply supplied to the sub-operation circuit; wherein the second lossless conversion voltage is lower than the first lossless switching voltage.

Abstract: The present invention relates to a reaction platform, which comprises: a machine body with a bottom plate for placing non-porous substrates; and a coater module configured on the top of the machine body and capable of maintaining a preset of a predetermined height for moving along the surface of non-porous substrate, wherein the coater module has one or more slits, and a target liquid can be directly injected or sucking in from the outside of the coater module through the slit, and spreading the target liquid onto a surface of the non-porous substrate while moving along the non-porous substrate; wherein the surface of the non-porous substrate has a target to be coated. The reaction platform of the present invention can not only save time, labor and cost, but also have accurate and reproducible experimental results, showing better results than traditional methods.

Abstract: A semiconductor device with dual side source/drain (S/D) contact structures and a method of fabricating the same are disclosed. The method includes forming a fin structure on a substrate, forming a superlattice structure on the fin structure, forming first and second S/D regions within the superlattice structure, forming a gate structure between the first and second S/D regions, forming first and second contact structures on first surfaces of the first and second S/D regions, and forming a third contact structure, on a second surface of the first S/D region, with a work function metal (WFM) silicide layer and a dual metal liner. The second surface is opposite to the first surface of the first S/D region and the WFM silicide layer has a work function value closer to a conduction band energy than a valence band energy of a material of the first S/D region.

Abstract: In a method of cleaning a lithography system, during idle mode, a stream of air is directed, through a first opening, into a chamber of a wafer table of an EUV lithography system. One or more particles is extracted by the directed stream of air from surfaces of one or more wafer chucks in the chamber of the wafer table. The stream of air and the extracted one or more particle are drawn, through a second opening, out of the chamber of the wafer table.

Abstract: A device includes a pair of gate spacers on a substrate, and a gate structure on the substrate and between the gate spacers. The gate structure includes an interfacial layer, a metal oxide layer, a nitride-containing layer, a tungsten-containing layer, and a metal compound layer. The interfacial layer is over the substrate. The metal oxide layer is over the interfacial layer. The nitride-containing layer is over the metal oxide layer. The tungsten-containing layer is over the nitride-containing layer. The metal compound layer is over the tungsten-containing layer. The metal compound layer has a different material than a material of the tungsten-containing layer.

Abstract: A laser inspection system is provided. A laser source emits a laser with a first spectrum and the laser is transmitted by a first optical fiber. A gain optical fiber doped with special ions is connected to the first optical fiber, and a light detector is provided around the gain optical fiber. When the laser with the first spectrum passes through the gain optical fiber, the gain optical fiber absorbs part of the energy level of the laser with the first spectrum, so that the laser with the first spectrum is converted to generate light with a second spectrum based on the frequency conversion phenomenon. The light detector detects the intensity of the light with the second spectrum, so that the power of the laser source can be obtained.

Abstract: A semiconductor device includes a substrate and a gate structure. The gate structure is disposed on the substrate, and the gate structure includes a titanium nitride barrier layer a titanium aluminide layer, and a middle layer. The titanium aluminide layer is disposed on the titanium nitride barrier layer, and the middle layer is disposed between the titanium aluminide layer and the titanium nitride barrier layer. The middle layer is directly connected with the titanium aluminide layer and the titanium nitride barrier layer, and the middle layer includes titanium and nitrogen. A concentration of nitrogen in the middle layer is gradually decreased in a vertical direction towards an interface between the middle layer and the titanium aluminide layer.

Abstract: A stacked integrated circuit (IC) device and a method are disclosed. The stacked IC device includes a first semiconductor element. The first substrate includes a dielectric block in the first substrate; and a plurality of first conductive features formed in first inter-metal dielectric layers over the first substrate. The stacked IC device also includes a second semiconductor element bonded on the first semiconductor element. The second semiconductor element includes a second substrate and a plurality of second conductive features formed in second inter-metal dielectric layers over the second substrate. The stacked IC device also includes a conductive deep-interconnection-plug coupled between the first conductive features and the second conductive features. The conductive deep-interconnection-plug is isolated by dielectric block, the first inter-metal-dielectric layers and the second inter-metal-dielectric layers.

Abstract: The disclosure relates to a method or a platform for hydrogel-based 3D fabrication, wherein the hydrogel is patterned with a programmable femtosecond light sheet with a power density of 0.1 to 100 TW/cm2.

Abstract: A microtome comprises a support assembly; an actuator, mounted to the support assembly; a pair of oscillating flexure assemblies, held by the support assembly and each of which being located on one side of the actuator and oscillated by the actuator; and a blade assembly, mounted to each of the oscillating flexure assemblies so as to move in a direction same as the oscillating flexure assemblies.

Abstract: The present invention provides a loading box, which includes a box body, a first groove set, and a first positioning member. The box body includes a base and a side wall protruding from the base along a plurality of sides of the base. The first groove set has a plurality of first grooves, and is disposed on the base along a first side. The first positioning member is arranged corresponding to the first groove set, and includes: a first baffle, detachably inserted into one of the first grooves in the first groove set; and a first supporting arm and a second supporting arm, respectively connected to the first baffle and protruding from the first baffle toward the side wall. One ends of the first supporting arm and the second supporting arm of the first positioning member away from the first baffle are detachably connected to the box body.

Abstract: In some embodiments, a control system, a control method and a storage medium are provided. In the method, first motion information of a machine acquired by a first sensor is received; the first motion information is inputted into a deep learning model to obtain a model output, the deep learning model comprising a convolutional neural network (CNN) and a long short-term memory (LSTM); the deep learning model is trained using the first motion information and second motion information acquired by a second sensor; the first sensor and the second sensor having different ways of detecting information and processing the detected information. The model output is used to control the machine.

Abstract: The present invention provides a loading box, which includes a box body, a first groove set, and a first positioning member. The box body includes a base and a side wall protruding from the base along a plurality of sides of the base. The first groove set has a plurality of first grooves, and is disposed on the base along a first side. The first positioning member is arranged corresponding to the first groove set, and includes: a first baffle, detachably inserted into one of the first grooves in the first groove set; and a first supporting arm and a second supporting arm, respectively connected to the first baffle and protruding from the first baffle toward the side wall. One ends of the first supporting arm and the second supporting arm of the first positioning member away from the first baffle are detachably connected to the box body.

Abstract: The disclosure relates to a method or a platform for hydrogel-based 3D fabrication, wherein the hydrogel is patterned with a programmable femtosecond light sheet with a power density of 0.1 to 100 TW/cm2.

Abstract: An apparatus is disclosed for performing an additive manufacturing operation to form a structure by processing a photopolymer resist material. The apparatus may incorporate a laser for generating a laser beam, and a tunable mask for receiving the laser beam which has an optically dispersive element. The mask splits the laser beam into a plurality of emergent beams each having a subplurality of beamlets of varying or identical intensity, with each beamlet emerging from a unique subsection of illuminated regions of the mask. A collimator collimates at least one of the emergent beams to form a collimated beam. One or more focusing elements focuses the collimated beam into a focused beam which is projected as a focused image plane on or within the resist material. The focused beam simultaneously illuminates a layer of the resist material to process an entire layer in a parallel fashion.

Abstract: A microtome comprises a support assembly; an actuator, mounted to the support assembly; a pair of oscillating flexure assemblies, held by the support assembly and each of which being located on one side of the actuator and oscillated by the actuator; and a blade assembly, mounted to each of the oscillating flexure assemblies so as to move in a direction same as the oscillating flexure assemblies.

Abstract: A liquid encapsulation device for embedding sensor is provided. The liquid encapsulation device comprises a substrate having an upper surface with a central concave portion; at least one protection layer sealed on the upper surface of the substrate; and at least one sensor fixed on the protection layer. Wherein, the central concave portion is filled with liquid and the sensor is arranged above the central concave portion.

Abstract: A laser-based manufacturing system is disclosed for fabricating non-planar three-dimensional layers. The system may have a laser for producing a laser beam with a plurality of optical wavelengths. An optically dispersive element may be used for receiving the laser beam and splitting the beam into a plurality of distinct beam components, wherein each beam component has spatially separated optical spectral components. A phase mask may be used which is configured to receive at least one of the beam components emerging from the dispersive element and to create a modified beam. One or more focusing elements may then be used to receive the modified beam emerging from the phase mask and to focus the modified beam into a non-planar light sheet for use in fabricating a part.

Abstract: A chip package structure, comprises a first chip having a plurality of first chip joints at a lower side thereof; a circuit board below the first chip; an upper side of the circuit board being arranged with a plurality of circuit board joints; in packaging, the first chip joints being combined with the circuit board joints of the circuit board so that the first chip is combined to the circuit board by a way of ACF combination or convex joint combination; and wherein in the ACF combination, ACFs are used as welding points to be combined to the pads at another end so that the chip is combined to the circuit board; and wherein in the convex pad combination, a convex pad is combined with a flat pad by chemically methods or physical methods; and these pads are arranged on the circuit board and the first chip.