Abstract: In one embodiment, the present invention includes a translation lookaside buffer (TLB) to store entries each having a translation portion to store a virtual address (VA)-to-physical address (PA) translation and a second portion to store bits for a memory page associated with the VA-to-PA translation, where the bits indicate attributes of information in the memory page. Other embodiments are described and claimed.

Abstract: Systems and methods may provide for determining whether a memory access request is error-tolerant, and routing the memory access request to a reliable memory region if the memory access request is error-tolerant. Moreover, the memory access request may be routed to an unreliable memory region if the memory access request is error-tolerant. In one example, use of the unreliable memory region enables a reduction in the minimum operating voltage level for a die containing the reliable and unreliable memory regions.

Abstract: Some embodiments include a counter having a first generator to generate signals having different frequencies, and a second generator to generate counter values of the counter. Each of the counter values may be based at least in part on a number of transitions of a respective signal among the signals. Other embodiments are described.

Abstract: A cache memory system uses multi-bit Error Correcting Code (ECC) with a low storage and complexity overhead. In an embodiment, error correction logic may include a first error correction logic to determine a number of errors in data that is stored in a cache line of a cache memory, and a second error correction logic to receive the data from the first error correction logic if the number of errors is determined to be greater than one and to perform error correction responsive to receipt of the data. The cache memory system can be operated at very low idle power, without dramatically increasing transition latency to and from an idle power state due to loss of state. Other embodiments are described and claimed.

Abstract: A processor or other apparatus of an aspect may include a first cache, a first error correction code (ECC) logic for the first cache, a second cache, and a second ECC logic for the second cache. The apparatus may also include an interconnect coupled with or between the first cache and the second cache. The interconnect is operable to transmit data and also check bits corresponding to the data between the first cache and the second cache. A method of an aspect may include accessing data, and check bits corresponding to the data, from a first cache. The data and the check bits may be transmitted over an interconnect from the first cache to a second cache. The data and the check bits may be stored in the second cache. Other methods, apparatus, and systems are also disclosed.

Abstract: In one embodiment, the present invention includes a translation lookaside buffer (TLB) to store entries each having a translation portion to store a virtual address (VA)-to-physical address (PA) translation and a second portion to store bits for a memory page associated with the VA-to-PA translation, where the bits indicate attributes of information in the memory page. Other embodiments are described and claimed.

Abstract: In one embodiment, the present invention includes a translation lookaside buffer (TLB) to store entries each having a translation portion to store a virtual address (VA)-to-physical address (PA) translation and a second portion to store bits for a memory page associated with the VA-to-PA translation, where the bits indicate attributes of information in the memory page. Other embodiments are described and claimed.

Abstract: A processor may comprise a cache, which may be divided into a first and second section while the processor operates in a low-power mode. A cache line of the first section may be fragmented into segments. A first encoder may generate first data bits and check bits while encoding a first portion of a data stream and a second encoder may, separately, generate second data bits and check bits while encoding a second portion of the data stream. The first data bits may be stored in a first segment of the first section and the check bits in a first portion of the second section that is associated with the first segment. The first decoder may correct errors in multiple bit positions within the first data bits using the check bits stored in the first portion and the second decoder may, separately, decode the second data bits using the second set of check bits.

Abstract: A processor or other apparatus of an aspect may include a first cache, a first error correction code (ECC) logic for the first cache, a second cache, and a second ECC logic for the second cache. The apparatus may also include an interconnect coupled with or between the first cache and the second cache. The interconnect is operable to transmit data and also check bits corresponding to the data between the first cache and the second cache. A method of an aspect may include accessing data, and check bits corresponding to the data, from a first cache. The data and the check bits may be transmitted over an interconnect from the first cache to a second cache. The data and the check bits may be stored in the second cache. Other methods, apparatus, and systems are also disclosed.

Abstract: A cache memory system is provided that uses multi-bit Error Correcting Code (ECC) with a low storage and complexity overhead. The cache memory system can be operated at very low idle power, without dramatically increasing transition latency to and from an idle power state due to loss of state.

Abstract: In one embodiment, the present invention includes a translation lookaside buffer (TLB) to store entries each having a translation portion to store a virtual address (VA)-to-physical address (PA) translation and a second portion to store bits for a memory page associated with the VA-to-PA translation, where the bits indicate attributes of information in the memory page. Other embodiments are described and claimed.

Abstract: A device and method may fetch an instruction or micro-operation for execution. An indication may be made as to whether the instruction is dependent upon any source values corresponding to a set of previously fetched instructions. A value may be stored corresponding to each source value from which the first instruction depends. An indication may be made for each of the set of sources of the instruction, whether the source depends on a previously loaded value or source, where indicating may include storing a value corresponding to the indication. The instruction may be executed after the stored values associated with the instruction indicate the dependencies are satisfied.

Abstract: In one embodiment, the present invention includes a translation lookaside buffer (TLB) to store entries each having a translation portion to store a virtual address (VA)-to-physical address (PA) translation and a second portion to store bits for a memory page associated with the VA-to-PA translation, where the bits indicate attributes of information in the memory page. Other embodiments are described and claimed.

Abstract: A processor may comprise a cache, which may be divided into a first and second section while the processor operates in a low-power mode. A cache line of the first section may be fragmented into segments. A first encoder may generate first data bits and check bits while encoding a first portion of a data stream and a second encoder may, separately, generate second data bits and check bits while encoding a second portion of the data stream. The first data bits may be stored in a first segment of the first section and the check bits in a first portion of the second section that is associated with the first segment. The first decoder may correct errors in multiple bit positions within the first data bits using the check bits stored in the first portion and the second decoder may, separately, decode the second data bits using the second set of check bits.

Abstract: A device and method may fetch an instruction or micro-operation for execution. An indication may be made as to whether the instruction is dependent upon any source values corresponding to a set of previously fetched instructions. A value may be stored corresponding to each source value from which the first instruction depends. An indication may be made for each of the set of sources of the instruction, whether the source depends on a previously loaded value or source, where indicating may include storing a value corresponding to the indication. The instruction may be executed after the stored values associated with the instruction indicate the dependencies are satisfied.

Abstract: In one embodiment, the present invention includes a translation lookaside buffer (TLB) to store entries each having a translation portion to store a virtual address (VA)-to-physical address (PA) translation and a second portion to store bits for a memory page associated with the VA-to-PA translation, where the bits indicate attributes of information in the memory page. Other embodiments are described and claimed.

Abstract: Two latches store the state of a data signal at a transition of a clock signal. Comparison logic compares the outputs of the two latches and produces a signal to indicate whether the outputs are equal or unequal. Systems using the latches and comparison logic are described and claimed.

Abstract: A manufacturing process modification is disclosed for producing a metal-insulator-metal (MIM) capacitor. The MIM capacitor may be used in memory cells, such as DRAMs, and may also be integrated into logic processing, such as for microprocessors. The processing used to generate the MIM capacitor is adaptable to current logic processing techniques. Other embodiments are described and claimed.

Abstract: A floating-body dynamic random access memory device may include a semiconductor body having a top surface and laterally opposite sidewalls formed on a substrate. A gate dielectric layer may be formed on the top surface of the semiconductor body and on the laterally opposite sidewalls of the semiconductor body. A gate electrode may be formed on the gate dielectric on the top surface of the semiconductor body and adjacent to the gate dielectric on the laterally opposite sidewalls of the semiconductor body. The gate electrode may only partially deplete a region of the semiconductor body, and the partially depleted region may be used as a storage node for logic states.

Abstract: A dynamic random access memory includes a cell having a circuit between a floating-body transistor and a bit line. Activation of the circuit is controlled to provide isolation between the floating body and bit-line voltage both during write operations and during times when the cell is unselected. The added isolation improves performance, for example, by reducing the need for gate-to-body coupling and the magnitude of voltage swings between the bit lines.