Abstract: An object of the present disclosure is to enable a warning to be issued to a person who is highly likely to be put in danger at a risky point. In an information processing apparatus, a controller acquires information indicating a risky point, acquires a state of a person with a predetermined positional relationship to the risky point, and determines whether or not the state of the person is a state where there is a high possibility of being put in danger, among a plurality of states of the person assumable at the risky point. Furthermore, in a case where the state of the person is determined to be the state where there is a high possibility of being put in danger, the controller causes an output unit to output information indicating a warning.

Abstract: A memory die includes dielectric isolation rails embedded within a substrate semiconductor layer, laterally spaced apart along a first horizontal direction, and each laterally extending along a second horizontal direction that is perpendicular to the first horizontal direction, and alternating stacks of insulating layers and electrically conductive layers located over the substrate semiconductor layer. The alternating stacks are laterally spaced apart along the second horizontal direction by line trenches that laterally extend along the first horizontal direction. Arrays of memory stack structures are provided such that each array of memory stack structures among the arrays of memory stack structures vertically extends through a respective alternating stack. Each of the memory stack structures includes a respective vertical stack of memory elements and a respective vertical semiconductor channel.

Abstract: Provided is a saddled-vehicle cowl structure capable of effectively supplying outside air to a power unit. A saddled-vehicle cowl structure includes a main seat on which an occupant is seated, a side cowl that covers a side lower part of the main seat, an air cleaner box provided below the main seat and connected to a power unit, and an air intake duct for supplying outdoor air to the air cleaner box. The side cowl includes an inner side cowl and an outer side cowl disposed on a vehicle width direction outer side of the inner side cowl. An air intake port for supplying traveling wind to the air intake duct is provided near a front end portion of the inner side cowl. The air intake port is covered by the outer side cowl from an outer side.

Abstract: A cover fastening structure for a motorcycle, including a cover member around a headlight that can be made smaller in size and, at the same time, with highly accurate fastening. The cover fastening structure for the motorcycle includes: a headlight for lighting the front side of the motorcycle; middle cowls as exterior parts for covering lateral sides of the motorcycle; a headlight under cover disposed under the headlight such as to be continuous with the middle cowls; and a center upper cowl disposed rearwardly of the headlight under cover such as to cover the lower side of the headlight. The headlight under cover includes a rearward extending wall fitted to the center upper cowl, and the rearward extending wall is provided with a cutout. The center upper cowl is provided with a solid cylindrical fitting-receiving section. The cutout of the headlight under cover and the fitting-receiving section of the center upper cowl are fastened together by being fitted to each other.

Abstract: Provided is a saddled-vehicle cowl structure capable of effectively supplying outside air to a power unit. A saddled-vehicle cowl structure includes a main seat on which an occupant is seated, a side cowl that covers a side lower part of the main seat, an air cleaner box provided below the main seat and connected to a power unit, and an air intake duct for supplying outdoor air to the air cleaner box. The side cowl includes an inner side cowl and an outer side cowl disposed on a vehicle width direction outer side of the inner side cowl. An air intake port for supplying traveling wind to the air intake duct is provided near a front end portion of the inner side cowl. The air intake port is covered by the outer side cowl from an outer side.

Abstract: A cover fastening structure for a motorcycle, including a cover member around a headlight that can be made smaller in size and, at the same time, with highly accurate fastening. The cover fastening structure for the motorcycle includes: a headlight for lighting the front side of the motorcycle; middle cowls as exterior parts for covering lateral sides of the motorcycle; a headlight under cover disposed under the headlight such as to be continuous with the middle cowls; and a center upper cowl disposed rearwardly of the headlight under cover such as to cover the lower side of the headlight. The headlight under cover includes a rearward extending wall fitted to the center upper cowl, and the rearward extending wall is provided with a cutout. The center upper cowl is provided with a solid cylindrical fitting-receiving section. The cutout of the headlight under cover and the fitting-receiving section of the center upper cowl are fastened together by being fitted to each other.

Abstract: A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.

Abstract: Stay members to which various parts are to be attached are provided at a rear portion of a motorcycle, and stay supporting portions that support the stay members are provided on a vehicle body frame. The various parts include side bag supporting members and a carrier member. The side bag supporting members and the carrier member are fastened together to the stay members by a plurality of fastening members, and the stay members to which the side bag supporting members and the carrier member are fastened together are fastened to the stay supporting portions.

Abstract: An intake structure for a saddle type vehicle for effectively lower the temperature of suction air includes an intake system disposed behind an engine supported on a vehicle body frame and a vehicle body cover for covering at least a side of the intake system. An inlet that is open to a side of a vehicle body on the inner side of the vehicle body cover is provided in the intake system. Further, a negative pressure formation section is provided at a position of the vehicle body cover at a substantially equal height to that of the inlet and on the rear side of the vehicle. The negative pressure formation section is configured from a depressed portion at which a vehicle body cover surface is depressed to the inner side of the vehicle body and an opening positioned in the depressed portion.

Abstract: Stay members to which various parts are to be attached are provided at a rear portion of a motorcycle, and stay supporting portions that support the stay members are provided on a vehicle body frame. The various parts include side bag supporting members and a carrier member. The side bag supporting members and the carrier member are fastened together to the stay members by a plurality of fastening members, and the stay members to which the side bag supporting members and the carrier member are fastened together are fastened to the stay supporting portions.

Abstract: An intake structure for a saddle type vehicle for effectively lower the temperature of suction air includes an intake system disposed behind an engine supported on a vehicle body frame and a vehicle body cover for covering at least a side of the intake system. An inlet that is open to a side of a vehicle body on the inner side of the vehicle body cover is provided in the intake system. Further, a negative pressure formation section is provided at a position of the vehicle body cover at a substantially equal height to that of the inlet and on the rear side of the vehicle. The negative pressure formation section is configured from a depressed portion at which a vehicle body cover surface is depressed to the inner side of the vehicle body and an opening positioned in the depressed portion.

Abstract: A silicon oxide film (2) comprising an amorphous phase is deposited on a substrate (1) (see a step (b)) by a plasma CVD method using an SiH4 gas and an N2O gas. Subsequently, a sample comprising the silicon oxide film (2)/the substrate (1) is set on an RTA apparatus. The sample (=the silicon oxide film (2)/the substrate (1)) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200° C./s, and a temperature in heat treatment is 1000° C.

Abstract: A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.

Abstract: A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.

Abstract: A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).

Abstract: In a substrate cleaning method for cleaning a substrate with fine patterns having grooves or holes whose representative length is 0.1 mm or less, the substrate is arranged in a space which contains water, such that the substrate faces an acute-angled leading end of a discharge electrode which can be cooled, with a predetermined interval therebetween, with a counter electrode being interposed at a predetermined position between the substrate and the discharge electrode. Then, a predetermined voltage is applied between the discharge electrode and the counter electrode while generating dew condensation in the discharge electrode by cooling the discharge electrode. The substrate is cleaned by generating an aerosol containing water particles having sizes of equal to less than 10 nm in the leading end of the discharge electrode and spraying the aerosol on the substrate.

Abstract: A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).

Abstract: A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).

Abstract: Optical waveguides and optical transceivers are formed on one main surface of a semiconductor substrate. A light source is provided on one side surface of the semiconductor substrate, and emits light to the optical waveguides. In each of the optical transceivers, when a voltage is applied to a silicon layer, an optical resonator resonates with any one of the light components traveling through the optical waveguides, and emits the light component to an optical transmission member. In addition, in each of the optical transceivers, when a voltage is applied to the silicon layer, another optical resonators resonate with light traveling through the optical transmission member and emit the resonance light to photodetectors, respectively.

Abstract: An input layer outputs light having a relatively narrow emission angle distribution to a middle layer as an output signal if the signal level of input signal is relatively high and outputs light having a relatively broad emission angle distribution to the middle layer as the output signal if the signal level of input signal is relatively low. The middle layer outputs light having a relatively narrow emission angle distribution as an output signal to an output layer if the signal level of the output signal from input layer is relatively high and outputs light having a relatively broad emission angle distribution to the output layer as an output signal if the signal level of the output signal from the input layer is relatively low.