Abstract: A silicon oxide film (2) comprising an amorphous phase is deposited on a substrate (1) (see a step (b)) by a plasma CVD method using an SiH4 gas and an N2O gas. Subsequently, a sample comprising the silicon oxide film (2)/the substrate (1) is set on an RTA apparatus. The sample (=the silicon oxide film (2)/the substrate (1)) is heat-treated (rapid heating and rapid cooling) (see a step (c)). In this case, a temperature raising rate is 200° C./s, and a temperature in heat treatment is 1000° C.

Abstract: A light-emitting device includes an n-type silicon thin film (2), a silicon thin film (3), and a p-type silicon thin film (4). The silicon thin film (3) is formed on the n-type silicon thin film (2) and the p-type silicon thin film (4) is formed on the silicon thin film (3). The n-type silicon thin film (2), the silicon thin film (3), and the p-type silicon thin film (4) form a pin junction. The n-type silicon thin film (2) includes a plurality of quantum dots (21) composed of n-type Si. The silicon thin film (3) includes a plurality of quantum dots (31) composed of p-type Si. The p-type silicon thin film (4) includes a plurality of quantum dots (41) composed of p-type Si. Electrons are injected from the n-type silicon thin film (2) side and holes are injected from the p-type silicon thin film (4) side, whereby light is emitted at a silicon nitride film (3).

Abstract: An input layer outputs light having a relatively narrow emission angle distribution to a middle layer as an output signal if the signal level of input signal is relatively high and outputs light having a relatively broad emission angle distribution to the middle layer as the output signal if the signal level of input signal is relatively low. The middle layer outputs light having a relatively narrow emission angle distribution as an output signal to an output layer if the signal level of the output signal from input layer is relatively high and outputs light having a relatively broad emission angle distribution to the output layer as an output signal if the signal level of the output signal from the input layer is relatively low.

Abstract: Optical waveguides and optical transmission/reception units are placed on one principal plane of a semiconductor substrate. A light source is placed on one end surface of the semiconductor substrate and guides generated light to the optical waveguides. In the optical transmission/reception units, each of optical resonant members optically resonates with partial light of one of light beams propagating in the optical waveguides and emits the partial light into an optical transmission member if voltage is applied thereto. In the optical transmission/reception units, each of another optical resonant members optically resonates with light propagating in the optical transmission member and emits the resonated light into a photodetector unit if voltage is applied thereto.

Abstract: Optical waveguides and optical transmission/reception units are placed on one principal plane of a semiconductor substrate. A light source is placed on one end surface of the semiconductor substrate and guides generated light to the optical waveguides. In the optical transmission/reception units, each of optical resonant members optically resonates with partial light of one of light beams propagating in the optical waveguides and emits the partial light into an optical transmission member if voltage is applied thereto. In the optical transmission/reception units, each of another optical resonant members optically resonates with light propagating in the optical transmission member and emits the resonated light into a photodetector unit if voltage is applied thereto.

Abstract: Optical waveguides and optical transceivers are formed on one main surface of a semiconductor substrate. A light source is provided on one side surface of the semiconductor substrate, and emits light to the optical waveguides. In each of the optical transceivers, when a voltage is applied to a silicon layer, an optical resonator resonates with any one of the light components traveling through the optical waveguides, and emits the light component to an optical transmission member. In addition, in each of the optical transceivers, when a voltage is applied to the silicon layer, another optical resonators resonate with light traveling through the optical transmission member and emit the resonance light to photodetectors, respectively.

Abstract: A light-emitting element includes a n-type silicon oxide film and a p-type silicon nitride film. The n-type silicon oxide film and the p-type silicon nitride film formed on the n-type silicon oxide film form a p-n junction. The n-type silicon oxide film includes a plurality of quantum dots composed of n-type Si while the p-type silicon nitride film includes a plurality of quantum dots composed of p-type Si. Light emission occurs from the boundary between the n-type silicon oxide film and the p-type silicon nitride film by injecting electrons from the n-type silicon oxide film side and holes from the p-type silicon nitride film side.

Abstract: The present invention provides a semiconductor device in which, in order to prevent wiring delay, an electromagnetic wave is radiated from a transmitting dipole antenna placed on a semiconductor chip and received with a receiving antenna placed in a circuit block included in another semiconductor chip, instead of long metal wires or via-hole interconnection.

Abstract: A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.

Abstract: The present invention aims to provide processes and equipments for manufacturing semiconductors, according to which oxidation of wafer surfaces can be controlled by simple means and contaminants promoting oxidation and contaminants inviting a decreased yield of wafers can also be totally controlled. To achieve the object above, the present invention provides a process for manufacturing a semiconductor, characterized in that a substrate is treated while exposing the surface of the substrate with a negative ion-enriched gas; and an equipment for manufacturing a semiconductor comprising a gas channel through which a gas to be treated is passed; a negative ion-enriched gas generator consisting of a gas cleaner located at an upstream part of said gas channel and a negative ion generator located at a downstream part thereof: and means for supplying the resulting negative ion-enriched gas to the surface of each substrate.

Abstract: A manufacturing method for semiconductor devices that can improve uniformity in the surface of a silicon nitride film or a nitride film to be formed and improve production efficiency is provided. A step of forming a first film that is a silicon oxide film or a silicon oxynitride film on a silicon substrate, a step of forming a second film that is a tetrachlorosilane monomolecular layer, and a step of forming a third film that is a silicon nitride monomolecular layer by performing a nitriding process on the second film are included. A silicon nitride film having a predetermined film thickness is formed by repeating the step of forming the second film and the step of forming the third film for a predetermined number of times. In a manufacturing apparatus, a plurality of silicon substrates are arranged on a stair-like wafer boat, and a process gas is supplied toward the upper side of a reaction tube from a process gas supply pipe.

Abstract: The present invention provides a method of and an apparatus for preventing a substrate from being oxidized to suppress the production of a natural oxide film in an ordinary air atmosphere rather than a vacuum or inactive gas atmosphere. The present invention is characterized in that a substrate is stored in a closed space surrounded by a light-shielding member to suppress the growth of a natural oxide film on the substrate. In the space, it is preferable to store the substrate while removing a gaseous contaminant or both a gaseous contaminant and a particulate substance. Since a semiconductor substrate is stored in the space surrounded by the light-shielding member, no light is applied to the surface of the semiconductor substrate, thus suppressing the generation of a natural oxide film. The method is capable of suppressing the generation of a natural oxide film easily at a low cost without using a vacuum or inactive gas atmosphere because the process can be performed within air.