Abstract: There is provided a resin composition which has long-term heat resistance, rapid curing properties, high adhesive strength during heating, a low change ratio of adhesive strength, and a low normal temperature elastic modulus. The resin composition includes (A) a compound having in its molecule an OH group and any one of primary to tertiary amines, (B) dicyandiamide and/or imidazoles, (C) bismaleimides, and (D) a compound having in its molecule one or more epoxy groups, or cyanate ester.

Abstract: There is provided a resin composition having long-term heat resistance and a low change ratio of adhesive strength. The resin composition includes (A) a compound having in its molecule an OH group and any one of primary to tertiary amines, (B) dicyandiamide, and (C) bismaleimides.

Abstract: Coil units equipped with primary coils having the same specification are provided in a power feeding module. Coil-unit intermeshing recess sections are formed on a printed circuit board to match each of the coil units. Pads for joining together with electrodes formed on the coil units are formed on the bottom faces of each of the coil-unit intermeshing recess sections. A plurality of coil units can be mounted onto the printed circuit board easily, by fitting each of the coil units into each of the coil-unit intermeshing recess sections and joining them together, which will enable manufacturing efficiency to be improved.

Abstract: A multilayer ceramic capacitor has multiple laminated dielectric ceramic layers made of a dielectric ceramic, internal electrodes formed between the dielectric ceramic layers, and external electrodes electrically connected to the internal electrodes, wherein generation of cracks in the dielectric layer due to expansion of the internal electrode is suppressed by causing ceramic grains having a crystal axis ratio c/a higher than that of the ceramic grains constituting the dielectric layer to be present in non-contiguous parts of the internal electrodes between the dielectric ceramic layers, and by harnessing the stress-mitigating effect of domain switching involving these ceramic grains.

Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Abstract: The wireless power receiving device includes a receiving antenna, a rectifier circuit connected to the receiving antenna, that generates a rectified voltage, a charging circuit to receive the rectified voltage and charge a power storage device, and a modulator that modulates a voltage or current of the receiving antenna by changing a charging current of the charging circuit based on data to be transmitted to a wireless power transmitting device.

Abstract: A voltage generating unit includes an output transistor arranged as a first-terminal side extension of a path that includes a first terminal, a first resistive film, and a second terminal, and is configured to apply a first bias voltage to the first terminal. A current detection unit includes a detection transistor connected to the output transistor such that they form a current mirror circuit, a detection resistor arranged on a path of the detection transistor, and an amplifier circuit configured to amplify the difference between a voltage drop across a detection resistor and a predetermined voltage, and to output the difference thus amplified as a value which represents a panel current.

Abstract: A solar energy utilization system includes a solar panel, a motor that is driven by solar output power, and a motor stall prevention device that prevents the motor during drive from stalling, and as the motor stall prevention device, any of following devices is selected: (a) a motor stall prevention device that limits solar output voltage to voltage higher than voltage at which the solar panel outputs maximum power at the point in time; (b) a motor stall prevention device that limits solar output voltage to voltage at which, when the output voltage is changed on a P-V curve, a change rate becomes negative; and (c) a motor stall prevention device that is configured by a capacitor which is connected in parallel to the solar panel and stores power generated by the solar panel.

Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.

Abstract: A first resistive film is arranged such that one edge thereof is connected to a first terminal, and an edge that is opposite to the aforementioned edge is connected to a second terminal. A second resistive film is arranged with a gap between it and the first resistive film such that one edge thereof is connected to a third terminal. A voltage generating unit applies a predetermined first bias voltage and a predetermined second bias voltage to the first terminal and the second terminal, respectively. A voltage detection unit detects a panel voltage that occurs at the third terminal. A current detection unit detects a panel current that flows through a path including the first terminal, the first resistive film, and the second terminal. A computation unit determines the coordinates touched by the user, based upon the values of the panel voltage and the panel current.

Abstract: A first heat generating body, a cooling body, which is joined to one surface of the first heat generating body, second heat generating bodies, and heat transfer plates, which transfer the heat of the second heat generating bodies to the cooling body, are provided, wherein the first heat generating body is surface-to-surface joined to the cooling body by a first junction surface, and the heat transfer plates are surface-to-surface joined to the cooling body by a second junction surface which does not overlap the first junction surface.

Abstract: A first resistive film is arranged such that one edge thereof is connected to a first terminal, and an edge that is opposite to the aforementioned edge is connected to a second terminal. A second resistive film is arranged with a gap between it and the first resistive film such that one edge thereof is connected to a third terminal. A voltage generating unit applies a predetermined first bias voltage and a predetermined second bias voltage to the first terminal and the second terminal, respectively. A voltage detection unit detects a panel voltage that occurs at the third terminal. A current detection unit detects a panel current that flows through a path including the first terminal, the first resistive film, and the second terminal. A computation unit determines the coordinates touched by the user, based upon the values of the panel voltage and the panel current.

Abstract: A lighting remote control system includes an illuminating device for irradiating illumination light in a changeable direction, a remote controller for irradiating visible light, a direction sensor for detecting an irradiating direction of the visible light based on a posture of the remote controller, and a position sensor for detecting position coordinates of the remote controller. The illuminating device is designed to irradiate the illumination light on a position specified pursuant to the position coordinates of the remote controller detected by the position sensor, the irradiating direction of the visible light detected by the direction sensor and an arbitrarily-set unit length.

Abstract: A first resistive film is arranged such that one edge thereof is connected to a first terminal, and an edge that is opposite to the aforementioned edge is connected to a second terminal. A second resistive film is arranged with a gap between it and the first resistive film such that one edge thereof is connected to a third terminal. A voltage generating unit applies a predetermined first bias voltage and a predetermined second bias voltage to the first terminal and the second terminal, respectively. A voltage detection unit detects a panel voltage that occurs at the third terminal. A current detection unit detects a panel current that flows through a path including the first terminal, the first resistive film, and the second terminal. A computation unit determines the coordinates touched by the user, based upon the values of the panel voltage and the panel current.

Abstract: A photoelectric conversion element, a photoelectric conversion device and a method for manufacturing a photoelectric conversion element are disclosed. The photoelectric conversion element includes a lower electrode layer, a light absorption layer on the lower electrode layer and a semiconductor layer on the light absorption layer. The light absorption layer includes a group I-III-VI compound containing a group I-B element, a group III-B element, and Se. The semiconductor layer includes a group III-VI compound containing a group III-B element, S, and Se. The composition in atomic percent of Se of the group III-VI compound of the semiconductor layer at a side of the light absorption layer is higher than that at a side opposite to the light absorption layer. The photoelectric conversion device includes the aforementioned photoelectric conversion element.

Abstract: A voltage generating unit includes an output transistor arranged as a first-terminal side extension of a path that includes a first terminal, a first resistive film, and a second terminal, and is configured to apply a first bias voltage to the first terminal. A current detection unit includes a detection transistor connected to the output transistor such that they form a current mirror circuit, a detection resistor arranged on a path of the detection transistor, and an amplifier circuit configured to amplify the difference between a voltage drop across a detection resistor and a predetermined voltage, and to output the difference thus amplified as a value which represents a panel current.

Abstract: Methods for producing a semiconductor layer and for producing a photoelectric conversion device, semiconductor raw material are disclosed. An embodiment of the method for producing a semiconductor layer includes: forming a film containing a metal element and an oxygen element; generating oxygen gas by heating the film; and forming a semiconductor layer containing a metal chalcogenide from the film by allowing the metal element to react with a chalcogen element. Another embodiment of the method includes forming a lower film containing a metal element; forming an upper film, which contains the metal element and a substance that contains oxygen, on the lower film; generating oxygen gas by heating the substance; and forming a semiconductor layer containing a metal chalcogenide from the lower film and the upper film by allowing a chalcogen element to react with the metal element in the lower film and the upper film.

Abstract: A multilayer ceramic capacitor has multiple laminated dielectric ceramic layers made of a dielectric ceramic, internal electrodes formed between the dielectric ceramic layers, and external electrodes electrically connected to the internal electrodes, wherein generation of cracks in the dielectric layer due to expansion of the internal electrode is suppressed by causing ceramic grains having a crystal axis ratio c/a higher than that of the ceramic grains constituting the dielectric layer to be present in non-contiguous parts of the internal electrodes between the dielectric ceramic layers, and by harnessing the stress-mitigating effect of domain switching involving these ceramic grains.

Abstract: A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.

Abstract: Coil units equipped with primary coils having the same specification are provided in a power feeding module. Coil-unit intermeshing recess sections are formed on a printed circuit board to match each of the coil units. Pads for joining together with electrodes formed on the coil units are formed on the bottom faces of each of the coil-unit intermeshing recess sections. A plurality of coil units can be mounted onto the printed circuit board easily, by fitting each of the coil units into each of the coil-unit intermeshing recess sections and joining them together, which will enable manufacturing efficiency to be improved.