Patents by Inventor Shinichi Maeda

Shinichi Maeda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190156182
    Abstract: A data prediction apparatus includes a memory and processing circuitry coupled to the memory configured to (1) receive the target data on which to make inference, (2) extract a neighborhood data group that is a set of data points in supervised data that are similar to the target data, (3) generate a local model by performing local and regularization learning using the neighborhood data group, and (4) make inference on the target data by using the local model.
    Type: Application
    Filed: October 30, 2018
    Publication date: May 23, 2019
    Inventors: Shinichi Maeda, Masanori Koyama
  • Publication number: 20190055466
    Abstract: Provided is a production method for a carbon-based light-emitting material that generates light having a wavelength of 500 to 700 nm when exposed to excitation light having a wavelength of 300 to 600 nm. The production method comprises a step for mixing and heating a starting material containing ascorbic acid, an acid catalyst containing an inorganic acid, and a solvent.
    Type: Application
    Filed: January 25, 2017
    Publication date: February 21, 2019
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Tadayuki ISAJI, Naoki OTANI, Shinichi MAEDA, Masahiro UEDA, Takayoshi KAWASAKI
  • Patent number: 10177035
    Abstract: It is prevented that when a predetermined number of semiconductor chips having transistors are manufactured from one semiconductor wafer, manufacturing cost of a semiconductor device is increased due to excess semiconductor chips manufactured from the semiconductor wafer. A first bipolar transistor including a first emitter region having a first area is formed in a first chip formation region in an exposure region that can be exposed by one exposure step, and a second bipolar transistor including a second emitter region having a second area different from the first area is formed in a second chip formation region in the exposure region.
    Type: Grant
    Filed: August 7, 2017
    Date of Patent: January 8, 2019
    Assignee: Renesas Electronics Corporation
    Inventor: Shinichi Maeda
  • Patent number: 10049699
    Abstract: A disc tray includes a bottom wall including an outer periphery and an inner rib supporter supporting the lowermost disc from below. The bottom wall is thickened from the outer periphery toward the inner rib supporter. The lowermost disc includes a data recording area, an inner rib, and an outer rib. When the lowermost disc is stationary, the outer rib of the lowermost disc and the upper surface of the bottom wall are separated by a gap. When the lowermost disc is inclined in such a manner that part of the outer rib of the lowermost disc comes into contact with the upper surface of the bottom wall, the data recording area of the lowermost disc and the upper surface of the bottom wall are separated by a gap greater than thickness of the outer or inner rib.
    Type: Grant
    Filed: October 25, 2017
    Date of Patent: August 14, 2018
    Assignee: Panasonic Intellecutal Property Management Co., Ltd.
    Inventors: Yoichi Yamamoto, Shinichi Maeda, Norikatsu Yoshida, Shuji Tabuchi
  • Publication number: 20180144773
    Abstract: A disc tray includes a bottom wall including an outer periphery and an inner rib supporter supporting the lowermost disc from below. The bottom wall is thickened from the outer periphery toward the inner rib supporter. The lowermost disc includes a data recording area, an inner rib, and an outer rib. When the lowermost disc is stationary, the outer rib of the lowermost disc and the upper surface of the bottom wall are separated by a gap. When the lowermost disc is inclined in such a manner that part of the outer rib of the lowermost disc comes into contact with the upper surface of the bottom wall, the data recording area of the lowermost disc and the upper surface of the bottom wall are separated by a gap greater than thickness of the outer or inner rib.
    Type: Application
    Filed: October 25, 2017
    Publication date: May 24, 2018
    Inventors: Yoichi YAMAMOTO, Shinichi MAEDA, Norikatsu YOSHIDA, Shuji TABUCHI
  • Publication number: 20180082944
    Abstract: In a semiconductor device having a capacitive element, an increase in a leak current caused by the generation of a parasitic MOSFET is avoided by thinning the insulating film between the electrodes of the capacitive element and thickening the interlayer insulating film. The semiconductor device is provided with a capacitive element including a lower electrode formed on the main surface of the semiconductor substrate in the capacitive element region and an upper electrode formed just above the lower electrode through the silicon nitride film and an interlayer insulating film including a silicon oxide film, a silicon nitride film, and a silicon oxide film over the semiconductor substrate in a region different from the capacitive element region.
    Type: Application
    Filed: September 14, 2017
    Publication date: March 22, 2018
    Inventor: Shinichi MAEDA
  • Patent number: 9859442
    Abstract: The invention provides a metal oxide semiconductor layer forming composition containing a solvent represented by formula [1]: (wherein R1 represents a C2 to C3 linear or branched alkylene group, and R2 represents a C1 to C3 linear or branched alkyl group) and an inorganic metal salt.
    Type: Grant
    Filed: July 14, 2015
    Date of Patent: January 2, 2018
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventor: Shinichi Maeda
  • Publication number: 20170338155
    Abstract: It is prevented that when a predetermined number of semiconductor chips having transistors are manufactured from one semiconductor wafer, manufacturing cost of a semiconductor device is increased due to excess semiconductor chips manufactured from the semiconductor wafer. A first bipolar transistor including a first emitter region having a first area is formed in a first chip formation region in an exposure region that can be exposed by one exposure step, and a second bipolar transistor including a second emitter region having a second area different from the first area is formed in a second chip formation region in the exposure region.
    Type: Application
    Filed: August 7, 2017
    Publication date: November 23, 2017
    Inventor: Shinichi MAEDA
  • Patent number: 9823563
    Abstract: To provide an alcohol compound containing fewer impurities at a high yield by conducting the following steps: a hydroboration process in which a reaction mixture is obtained by reacting in a solvent a compound represented by formula (C) and a boron agent selected from a group of diborane and borane complexes; and an oxidation process in which the pH of the reaction mixture is set at 0.5 to 4, which is conducted after treating the reaction mixture with hydrogen peroxide. In the formula, A1 to A6 are each independently a hydrogen atom, methyl group or ethyl group, and X is an oxygen atom, sulfur atom, methylene group or ethylene group.
    Type: Grant
    Filed: June 14, 2012
    Date of Patent: November 21, 2017
    Assignee: Mitsubishi Chemical Corporation
    Inventors: Satoshi Sakuma, Masashi Serizawa, Atsushi Yasuda, Nobuhisa Yada, Shinichi Maeda
  • Patent number: 9732253
    Abstract: There is provided a polyimide precursor which can alter the hydrophilicity/hydrophobicity of the surface of a cured film formed readily even by a low level of ultraviolet ray irradiation; and a polyimide produced from the polyimide precursor. The polyimide precursor having a structure represented by the following formula (1): where A represents a tetravalent organic group; B represents a bivalent organic group having a thiol ester bond in its main chain; R1 and R2 independently represent a hydrogen atom or a univalent organic group; and n represents a natural number.
    Type: Grant
    Filed: February 7, 2014
    Date of Patent: August 15, 2017
    Assignee: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventors: Shinichi Maeda, Yosuke Iinuma
  • Patent number: 9728460
    Abstract: It is prevented that when a predetermined number of semiconductor chips having transistors are manufactured from one semiconductor wafer, manufacturing cost of a semiconductor device is increased due to excess semiconductor chips manufactured from the semiconductor wafer. A first bipolar transistor including a first emitter region having a first area is formed in a first chip formation region in an exposure region that can be exposed by one exposure step, and a second bipolar transistor including a second emitter region having a second area different from the first area is formed in a second chip formation region in the exposure region.
    Type: Grant
    Filed: September 28, 2016
    Date of Patent: August 8, 2017
    Assignee: Renesas Electronics Corporation
    Inventor: Shinichi Maeda
  • Patent number: 9715568
    Abstract: The wiring length measurement apparatus includes a distance calculation unit, by using a plurality of coordinates of bending points and a wiring width of CAD data of a high-density wiring including a meander wiring, seeking each endpoint that exists on an edge in a wiring width direction and is a flexion point of each inner circuit side, and calculating distances between each adjacent endpoint and a measurement unit measuring a wiring length of the high-density wiring by calculating a sum of the distances between each endpoint calculated by the distance calculation unit.
    Type: Grant
    Filed: June 6, 2014
    Date of Patent: July 25, 2017
    Assignee: LIQUID DESIGN SYSTEMS INC.
    Inventors: Shinichi Maeda, Katsuhiko Iwase
  • Publication number: 20170162699
    Abstract: The invention provides a metal oxide semiconductor layer forming composition containing a solvent represented by formula [1]: (wherein R1 represents a C2 to C3 linear or branched alkylene group, and R2 represents a C1 to C3 linear or branched alkyl group) and an inorganic metal salt.
    Type: Application
    Filed: July 14, 2015
    Publication date: June 8, 2017
    Applicant: NISSAN CHEMICAL INDUSTRIES, LTD.
    Inventor: Shinichi MAEDA
  • Patent number: 9662081
    Abstract: This invention provides an X-ray CT image processing method that allows more flexible expression by expressing X-ray absorption coefficients probabilistically, makes it possible to acquire reconstructed images that are comparable to those obtained by conventional methods but involve lower X-ray doses, and can reduce beam-hardening artifacts. A probability distribution for the observation of projected X-rays is set and statistical inference is performed. Said probability distribution is expressed in terms of the process of observing a multiple-X-ray sum resulting from multiple projected X-rays being incident upon a detector. Bayesian inference in which the expected value of the posterior distribution is used for statistical inference is performed on the basis of a prior distribution for X-ray absorption coefficients, said prior distribution having parameters for the material and the observation process in terms of which the multiple-X-ray sum is expressed.
    Type: Grant
    Filed: May 15, 2014
    Date of Patent: May 30, 2017
    Assignee: Kyoto University
    Inventors: Shinichi Maeda, Daigo Yoshikawa, Takumi Tanaka, Shin Ishii
  • Publication number: 20170125295
    Abstract: It is prevented that when a predetermined number of semiconductor chips having transistors are manufactured from one semiconductor wafer, manufacturing cost of a semiconductor device is increased due to excess semiconductor chips manufactured from the semiconductor wafer. A first bipolar transistor including a first emitter region having a first area is formed in a first chip formation region in an exposure region that can be exposed by one exposure step, and a second bipolar transistor including a second emitter region having a second area different from the first area is formed in a second chip formation region in the exposure region.
    Type: Application
    Filed: September 28, 2016
    Publication date: May 4, 2017
    Inventor: Shinichi MAEDA
  • Patent number: 9540468
    Abstract: Provided is a resist copolymer which has favorable sensitivity, enables a resist pattern to be formed to have a favorable shape, has favorable dry etching resistance when a dry etching is carried out using the resist pattern as a mask, and suppresses the surface roughness of a pattern formed by carrying out a dry etching process to a substrate. A resist copolymer including a constituent unit (1) based on a (meth)acrylic acid ester derivative having a cyclic hydrocarbon group such as an adamantane ring and two or more cyano groups bonded to the cyclic hydrocarbon group, a constituent unit (2) having a lactone backbone and a cross-linking cyclic structure, and a constituent unit (3) having an acid leaving group.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: January 10, 2017
    Assignee: Mitsubishi Rayon Co., Ltd.
    Inventors: Keisuke Kato, Atsushi Yasuda, Ryuichi Ansai, Shinichi Maeda
  • Publication number: 20160267213
    Abstract: The wiring length measurement apparatus includes a distance calculation unit, by using a plurality of coordinates of bending points and a wiring width of CAD data of a high-density wiring including a meander wiring, seeking each endpoint that exists on an edge in a wiring width direction and is a flexion point of each inner circuit side, and calculating distances between each adjacent endpoint and a measurement unit measuring a wiring length of the high-density wiring by calculating a sum of the distances between each endpoint calculated by the distance calculation unit.
    Type: Application
    Filed: June 6, 2014
    Publication date: September 15, 2016
    Inventors: Shinichi Maeda, Katsuhiko Iwase
  • Publication number: 20160120493
    Abstract: This invention provides an X-ray CT image processing method that allows more flexible expression by expressing X-ray absorption coefficients probabilistically, makes it possible to acquire reconstructed images that are comparable to those obtained by conventional methods but involve lower X-ray doses, and can reduce beam-hardening artifacts. A probability distribution for the observation of projected X-rays is set and statistical inference is performed. Said probability distribution is expressed in terms of the process of observing a multiple-X-ray sum resulting from multiple projected X-rays being incident upon a detector. Bayesian inference in which the expected value of the posterior distribution is used for statistical inference is performed on the basis of a prior distribution for X-ray absorption coefficients, said prior distribution having parameters for the material and the observation process in terms of which the multiple-X-ray sum is expressed.
    Type: Application
    Filed: May 15, 2014
    Publication date: May 5, 2016
    Inventors: Shinichi MAEDA, Daigo YOSHIKAWA, Takumi TANAKA, Shin ISHII
  • Patent number: 9296842
    Abstract: A copolymer obtained by polymerizing two or more types of monomers, wherein among fractions obtained by dividing an eluate showing peaks relative to the copolymer, in an elution curve obtained by gel permeation chromatography (GPC), into eight fractions in order of fractionation, such that each fraction has the same volume, a difference between a monomer composition ratio of a copolymer contained in a first eluted fraction and a monomer composition ratio of all copolymers is ?3 mol % to +3 mol % in any of the constitutional units derived from the respective monomers.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: March 29, 2016
    Assignee: Mitsubishi Rayon Co., Ltd.
    Inventors: Atsushi Yasuda, Tomoya Oshikiri, Daisuke Matsumoto, Keisuke Katou, Shinichi Maeda
  • Patent number: 9129431
    Abstract: An x-ray CT image processing method which carries out a statistical estimate in prior knowledge relating to the movement and the x-ray absorption coefficient of a measurement subject comprises: a step of hypothesizing that the measurement subject changes smoothly over time, and defining a first probability model (prior knowledge of the measurement subject over all times) relating to movement and a second probability model (projected image observation model over all times) relating to observation; and a step of carrying out a statistical estimate dependent on both the first probability model and the second probability model. The first probability model relating to the movement of the measurement subject and the second model relating to observation are defined as probability models with which statistical estimates are carried out at the outset, and motion and CT images are simultaneously estimated by carrying out induction based on the probability models.
    Type: Grant
    Filed: December 18, 2012
    Date of Patent: September 8, 2015
    Assignee: National University Corporation Kyoto University
    Inventors: Shinichi Maeda, Takumi Tanaka, Shin Ishii