Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus capable of generating highly-accurate image pickup signals having a large dynamic range. Pixels each include a high-sensitivity pixel and a low-sensitivity pixel having a lower sensitivity than the high-sensitivity pixel. A control gate controls a potential of a photoelectric conversion device of the low-sensitivity pixel. The present disclosure is applicable to, for example, a CMOS image sensor that includes both the high-sensitivity pixel and the low-sensitivity pixel having a lower sensitivity than the high-sensitivity pixel and controls a potential of the photoelectric conversion device of the low-sensitivity pixel.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

Abstract: The present disclosure relates to a solid-state image pickup device and an electronic apparatus capable of generating highly-accurate image pickup signals having a large dynamic range. Pixels each include a high-sensitivity pixel and a low-sensitivity pixel having a lower sensitivity than the high-sensitivity pixel. A control gate controls a potential of a photoelectric conversion device of the low-sensitivity pixel. The present disclosure is applicable to, for example, a CMOS image sensor that includes both the high-sensitivity pixel and the low-sensitivity pixel having a lower sensitivity than the high-sensitivity pixel and controls a potential of the photoelectric conversion device of the low-sensitivity pixel.

Abstract: The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate 12 and multiple photoelectric converters 40 that are formed on the substrate 12, an insulating film 21 forms an embedded element separating unit 19. The element separating unit 19 is configured of an insulating film 20 having a fixed charge that is formed so as to coat the inner wall face of a groove portion 30, within the groove portion 30 which is formed in the depth direction from the light input side of the substrate 12.

Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.

Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.

Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.

Abstract: A solid state image pickup device includes a pixel section defined by unit pixels arrayed in line and row directions of a semiconductor substrate. Each of the unit pixels includes a photoelectric transducer that is formed on the semiconductor substrate and converts incident light into a signal charge, a waveguide that is formed above the photoelectric transducer and guides the incident light to the photoelectric transducer, and a microlens that is formed above the waveguide and guides the incident light to an end of light incident side of the waveguide. The waveguide has a columnar body with a constant cross section from the end of light incident side to an end of light exit side, and is arranged such that a center of rays of the incident light incident from the microlens on the end of light incident side of the waveguide is aligned with a central axis of the waveguide.

Abstract: A solid-state imaging device includes a semiconductor substrate including a pixel portion having a photoelectric conversion portion and a peripheral circuit portion; a first sidewall composed of a sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the pixel portion; a second sidewall composed of the sidewall film and disposed on each sidewall of gate electrodes of MOS transistors in the peripheral circuit portion; a first silicide blocking film composed of the sidewall film and disposed on the photoelectric conversion portion and a part of the MOS transistors in the pixel portion; and a second silicide blocking film disposed on the MOS transistors in the pixel portion so as to overlap with a part of the first silicide blocking film, wherein the MOS transistors in the pixel portion are covered with the first and second silicide blocking films.

Abstract: In an image pickup portion of a frame transfer CCD image sensor, a constitution that inhibits color mixing from occurring between light-sensitive pixels adjacent along a vertical CCD shift register channel is provided. A protrusion extending on the channel is formed at a clock wiring formed on a channel stop of the vertical CCD shift register with an wiring layer having the light-shielding property. When the protrusion portion is disposed at a boundary of light-sensitive pixels in the channel, a non-light-shielding portion generated at the boundary can be suppressed. The protrusions are disposed so as to alternately protrude from the clock wirings on both sides of the channel.

Abstract: A solid-state image sensor includes photoelectric conversion elements disposed in a matrix pattern. A filter, disposed on a light-receiving surface of each photoelectric conversion element, is one of three visible light filters which have central wavelengths for transmitting mutually different light components or a near-infrared filter having a transmission central frequency in a near-infrared light region. One of the visible light filters and the near-infrared filter are disposed in each column of the matrix pattern formed by the photoelectric conversion elements.

Abstract: In cases where AGP driving is applied to a CCD solid-state image sensor having a horizontal overflow drain structure, a problem arises in that the charges overflow into the second channel regions (8) from the overflow drain regions (14), and noise is superimposed on the information charges. The CCD solid-state image sensor has a plurality of first channel regions (4) that are disposed parallel to each other, overflow drain regions (14) that are disposed between neighboring first channel regions (4), a plurality of separation regions (12) that are disposed between the first channel regions (4) and overflow drain regions (14), and a plurality of first transfer electrodes (10) that are disposed parallel to each other over the plurality of first channel regions in the direction perpendicular to the first channel regions (4).

Abstract: In cases where AGP driving is applied to a CCD solid-state image sensor having a horizontal overflow drain structure, a problem arises in that the charges overflow into the regions in which the information charges are accumulated from the overflow drain regions (14), and noise is superimposed on the information charges. The CCD solid-state image sensor has a plurality of first channel regions that transfer information charges, overflow drain regions that absorb the information charges of the first channel regions, drain electrodes that are connected to the overflow drain regions, and a plurality of first transfer electrodes that are disposed in the direction perpendicular to the plurality of first channel regions, and can transfer the information charges along the first channel regions. During accumulation driving in which the information charges are accumulated in the potential wells, a first potential is applied to the drain electrodes.