Abstract: A method for manufacturing a field-effect transistor includes forming an active layer of an oxide semiconductor, forming a conducting film to cover the active layer, patterning the conducting film through an etching process using an etchant to form a source electrode and a drain electrode, and performing, at least before the patterning the conducting film, a treatment on the active layer so that an etching rate of the active layer is less than an etching rate of the conducting film.

Abstract: A method for producing a field-effect transistor including first-oxide-layer and second-oxide-layer and forming front-channel or back-channel in region where the first-oxide-layer and the second-oxide-layer are adjacent to each other, the method including: forming second-precursor-layer, which is precursor of the second-oxide-layer, so as to be in contact with first-precursor-layer, which is precursor of the first-oxide-layer, and then converting the first-precursor-layer and the second-precursor-layer to the first-oxide-layer and the second-oxide-layer, respectively, the forming includes at least one of treatments (I) and (II) below: (I) treatment of: coating first-oxide-precursor-forming coating liquid that can form precursor of first oxide and contains solvent; and then removing the solvent to form the first-precursor-layer which is the precursor of the first-oxide-layer; and (II) treatment of: coating second-oxide-precursor-forming coating liquid that can form precursor of second oxide and contains solven

Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to transfer an electrical signal; an active layer, which is formed between the source electrode and the drain electrode; and a gate insulating layer, which is formed between the gate electrode and the active layer, the active layer including at least two kinds of oxide layers including layer A and layer B, and the active layer satisfying at least one of condition (1) and condition (2) below: condition (1): the active layer includes 3 or more oxide layers including 2 or more of the layer A; and condition (2): a band-gap of the layer A is lower than a band-gap of the layer B and an oxygen affinity of the layer A is equal to or higher than an oxygen affinity of the layer B.

Abstract: A semiconductor device includes a base; a gate electrode to which a gate voltage is applied; a source electrode and a drain electrode through which an electric current is generated according to the gate voltage being applied to the gate electrode; a semiconductor layer made of an oxide semiconductor; and a gate insulating layer inserted between the gate electrode and the semiconductor layer. The semiconductor layer includes a channel-forming region and a non-channel-forming region; the channel-forming region is in contact with the source electrode and the drain electrode, and the non-channel-forming region is in contact with the source electrode and the drain electrode.

Abstract: A pulverizing device includes: a housing; a pulverization table configured to rotate inside the housing; and a throat, disposed inside the housing on a radially outer side of the pulverization table, for forming an upward air flow. The throat includes: an inner ring extending along an outer periphery of the pulverization table; an outer ring, disposed on a radially outer side of the inner ring so as to form an annular flow passage between the inner ring and the outer ring; and a plurality of throat vanes disposed between the inner ring and the outer ring. The following expressions are satisfied: 2.0?L/d?4.0; and 0.5?H/d?1.

Abstract: A method is provided for manufacturing a field effect transistor that includes a gate insulating layer and an electrode including a first conductive film and a second conductive film successively laminated on a predetermined surface of the gate insulating layer. The method includes forming an oxide film including element A, which is an alkaline earth metal, and element B, which is at least one of Ga, Sc, Y and a lanthanide, as the gate insulating layer; forming a first conductive film that dissolves in an organic alkaline solution on the oxide film; forming a second conductive film on the first conductive film; etching the second conductive film with an etching solution having a higher etch rate for the second conductive film as compared with that for the first conductive film; and etching the first conductive film with the organic alkaline solution using the second conductive film as a mask.

Abstract: An oxide semiconductor includes an oxide having a layered structure expressed by an expression of a product of [(AO)(ZO)mi(BO)(ZO)ni]i from i=1 to L. In the product, an atom A is a positive monovalent element, an atom Z is a positive divalent element, an atom B is a positive trivalent element, L is a positive integer, and mi and ni are independent integers greater than or equal to zero. A sum from i=1 to L of (mi+ni) is not zero.

Abstract: In a rotary classifier and a vertical mill, a rotary separator (33) is configured such that plural rotary blades (43) are fixed to an outer circumference portion at predetermined intervals in a circumferential direction between an upper support frame (41) and a lower support frame (42), which have a disk-like shape, wherein a tilted surface (52), which tilts at an acute angle relative to a tangent line (T) to a rotation locus (G1) on an outer circumference side and includes a concave portion (51) formed between an outer end (43a) and an inner end (43b), is formed on a front surface of each of the rotary blades (43) in a rotating direction.

Abstract: A field-effect transistor including: a gate electrode; a source electrode and a drain electrode; an active layer disposed to be adjacent to the source electrode and the drain electrode and including a n-type oxide semiconductor; and a gate insulating layer disposed between the gate electrode and the active layer, wherein the n-type oxide semiconductor undergoes substitutional doping with at least one dopant selected from divalent, trivalent, tetravalent, pentavalent, hexavalent, heptavalent, and octavalent cations, valence of the dopant is greater than valence of a metal ion constituting the n-type oxide semiconductor, provided that the dopant is excluded from the metal ion, and the source electrode and the drain electrode include a material selected from Au, Pt, and Pd and alloys including at least any one of Au, Pt, and Pd, in at least contact regions of the source electrode and the drain electrode with the active layer.

Abstract: A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.

Abstract: A superconducting magnet device including a superconducting coil formed of a high-temperature superconducting wire, a power supply which supplies current to the superconducting coil, and a protector capable of forming a short-circuit path which short-circuits both ends of the superconducting coil to each other is installed. Current is made to flow from the power supply to the superconducting coil in a superconducting state, and the superconducting coil thereby generates a magnetic field. After the magnetic field is generated, when an abnormality of the superconducting magnet device is detected, or when the power supply and the superconducting coil are disconnected from each other, the short-circuit path is formed by the protector.

Abstract: A classifier including a housing to take in air flow from below into a radially outer region of an inside space; a flow deflection portion to deflect the air flow toward a center axis of the housing; and an annular rotational portion disposed rotatably in a radially inner region positioned on a radially inner side of the radially outer region, of the inside space of the housing, and configured to classify particles which accompany the air flow. The annular rotational portion includes a plurality of rotational blades arranged at intervals around a rotational axis of the annular rotational portion. The plurality of rotational blades form an outer shape of the annular rotational portion forms an angle ? of not greater than 75° with a segment extended in a horizontal direction from the annular rotational portion outward in a radial direction, in a side view of the annular rotational portion.

Abstract: A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

Abstract: To provide a resin mold which is excellent in adhesion to a substrate, excellent in release properties from a transfer material resin, further excellent in durability of the resin mold itself, and which endures repetition transfer to the transfer material resin, a resin mold of the invention is a resin mold having a fine concavo-convex structure on the surface, and is characterized in that the fluorine element concentration (Es) in a resin mold surface portion is the average fluorine element concentration (Eb) in the resin forming the resin mold or more.

Abstract: A polymer containing a repeating unit expressed by General Formula (I): where Ar1 represents a substituted or unsubstituted aromatic hydrocarbon group; Ar2 and Ar3 independently represent a divalent group of a substituted or unsubstituted aromatic hydrocarbon group; and R1 and R2 each independently represent a hydrogen atom, substituted or unsubstituted alkyl group, or substituted or unsubstituted aromatic hydrocarbon group.

Abstract: A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer, formed between the substrate and passivation layer; a source electrode and a drain electrode, formed to be in contact with the gate insulating layer; a semiconductor layer, formed at least between the source electrode and drain electrode and being in contact with the gate insulating layer, source electrode, and drain electrode; and a gate electrode, in contact with the gate insulating layer and facing the semiconductor layer via the gate insulating layer, wherein the passivation layer is formed of a single layer containing a paraelectric amorphous oxide containing a Group A element, an alkaline earth metal and a Group B element, at least one selected from Ga, Sc, Y, and lanthanoid, and the gate insulating layer contains at least one selected from oxides of Si, nitrides of Si, and oxynitrides of Si.

Abstract: To provide an electroconductive thin film, containing: a metal oxide containing indium and tin; and gold.

Abstract: A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

Abstract: A mill roller (6) is provided with a roller main body (62) that rotates about an inclined axis line (O2) and has an outer peripheral surface (64) for pulverizing an object to be crushed against the mill table (4). The outer peripheral surface (64) is convex outward in a radial direction of the roller main body (62). The outer peripheral surface (64) has a first outer peripheral surface (641) and a second outer peripheral surface (642). The first outer peripheral surface (641) has an arcuate shape formed to have the same radius of curvature on both sides of a maximum outer diameter point (A). The second outer peripheral surface (642) is further receded inward in the radial direction than an imaginary circle running along the first outer peripheral surface (641).

Abstract: A grinding disc includes an inner layer (20) which is made of grindable material (containing abrasive particles) and an outer layer (20) which covers at least a portion of the surface of the inner layer (50) and which is made of non-grindable material (i.e. not-containing abrasive grain).