Abstract: A gas barrier laminate includes a substrate and a barrier layer formed on at least one of faces of the substrate. The barrier layer includes composite oxide including silicon and alkaline-earth metal.

Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; a semiconductor layer, which is disposed to be adjacent to the source electrode and the drain electrode; and a gate insulating layer, which is disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes a first gate insulating layer containing a first oxide containing Si and an alkaline earth metal and a second gate insulating layer disposed to be in contact with the first gate insulating layer and containing a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid.

Abstract: A field-effect transistor including: a gate electrode, which is configured to apply gate voltage; a source electrode and a drain electrode, which are configured to take electric current out; an active layer, which is disposed to be adjacent to the source electrode and the drain electrode and is formed of an oxide semiconductor; and a gate insulating layer, which is disposed between the gate electrode and the active layer, wherein the gate insulating layer contains a paraelectric amorphous oxide containing a Group A element which is an alkaline earth metal and a Group B element which is at least one selected from the group consisting of Ga, Sc, Y, and lanthanoid, and wherein the active layer has a carrier density of 4.0×1017/cm3 or more.

Abstract: A field-effect transistor includes a gate electrode, a source electrode and a drain electrode to take out electric current according to an application of a voltage to the gate electrode, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, the semiconductor layer forming a channel between the source electrode and the drain electrode, a first insulating layer as gate insulating film disposed between the semiconductor layer and the gate electrode, and a second insulating layer covering at least a part of a surface of the semiconductor layer, the second insulating layer including an oxide including silicon and alkaline earth metal.

Abstract: A field-effect transistor includes a gate electrode to apply a gate voltage, a source electrode and a drain electrode to take electric current out, a semiconductor layer disposed adjacent to the source electrode and the drain electrode, and a gate insulating layer disposed between the gate electrode and the semiconductor layer, wherein the gate insulating layer includes an oxide including silicon and one or two or more alkaline earth metal elements.

Abstract: The present invention provides a touch panel substrate that allows for greater design freedom when designing conductive wire patterns for reducing occurrence of the moiré effect. The touch panel substrate includes: a first electrode layer that includes first conductive wires and second conductive wires; and a second electrode layer that includes third conductive wires and fourth conductive wires. When viewed in a plan view, the first conductive wires and the third conductive wires form first quadrilaterals, and the second conductive wires and the fourth conductive wire form second quadrilaterals. The first quadrilaterals and the second quadrilaterals are not identical to one another.

Abstract: A field-effect transistor including: a gate electrode; a source electrode and a drain electrode; an active layer disposed to be adjacent to the source electrode and the drain electrode and including a n-type oxide semiconductor; and a gate insulating layer disposed between the gate electrode and the active layer, wherein the n-type oxide semiconductor undergoes substitutional doping with at least one dopant selected from divalent, trivalent, tetravalent, pentavalent, hexavalent, heptavalent, and octavalent cations, valence of the dopant is greater than valence of a metal ion constituting the n-type oxide semiconductor, provided that the dopant is excluded from the metal ion, and the source electrode and the drain electrode include a material selected from Au, Pt, and Pd and alloys including at least any one of Au, Pt, and Pd, in at least contact regions of the source electrode and the drain electrode with the active layer.

Abstract: A field-effect transistor including: a substrate; a passivation layer; a gate insulating layer formed between the substrate and the passivation layer; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed at least between the source electrode and the drain electrode and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first complex oxide containing an alkaline earth metal and a rare-earth element, and wherein the gate insulating layer contains a second complex oxide containing an alkaline earth metal and a rare-earth element.

Abstract: An object of the present invention is to provide a method for protecting a superconducting coil, which method prevents damage to the superconducting coil caused by a quench or the like, in a new way, without using a voltage (a change in voltage) generated in the superconducting coil. Provided is the method for protecting a superconducting coil made by winding tape-like superconducting wire having a superconducting layer. Power from a power supply is shut off based on the magnitude of a screening field, which is a difference between a measured magnetic field B in a direction of a thickness of the superconducting wire at a predetermined position, and a magnetic field Bcal in the direction of the thickness of the superconducting wire calculated disregarding an effect of screening current.

Abstract: To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous.

Abstract: A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.

Abstract: A vehicle driving system includes an engine, an electric motor, a clutch, a torque converter, a transmission, a front module, and a housing. The clutch is configured to selectively connect or interrupt a power transmission path between the engine and the electric motor. The front module includes the clutch and the electric motor. The housing has an accommodation space that accommodates the front module and an accommodation space that accommodates the torque converter. The housing is a single member. The engine, the electric motor, the clutch, the torque converter and the transmission are arranged in series with one another.

Abstract: A nozzle plate having a nozzle hole that penetrates through the nozzle plate in a thickness direction is disclosed. The nozzle plate includes a discharge outlet that is formed at the nozzle hole, and provided curvatures of four corner portions of an opening shape of the discharge outlet are denoted as R1, R2, R3, and R4, the opening shape of the discharge outlet is configured to approximate the equation R1=R2?R3=R4?0.

Abstract: A touch panel substrate used for a touch panel with enhanced display quality is realized. A touch panel substrate (2) in accordance with one aspect of the invention includes a first detection electrode (11) including a plurality of first lattice electrodes (13) aligned in a lateral direction. Each of the plurality of first lattice electrodes (13) includes conductive lines (17a) and second conductive lines (17b). The conductive lines (17a) and the second conductive lines (17b) form a lattice. The conductive lines (17a) are inclined by an angle ? (0°<?<45°) in a lateral direction. A pitch of conductive lines (21) of a connecting section (16) which are parallel to the conductive lines (17a) is smaller than a pitch of the conductive lines (17a).

Abstract: A nozzle plate for a liquid droplet discharge head to discharge a charged liquid droplet, includes a discharge port disposed on a nozzle face; a discharge chamber filled with liquid to be discharged from the discharge port; a nozzle hole extending from the discharge port in a thickness direction of the nozzle plate and communicating with the discharge chamber; a first electrode disposed at either the discharge chamber or the nozzle hole and contacting part of the liquid droplet; and a second electrode disposed on the nozzle face and neither connecting to the first electrode nor contacting the liquid droplet.

Abstract: A field-effect transistor, including: a base; a passivation layer; a gate insulating layer formed therebetween; a source electrode and a drain electrode, which are formed to be in contact with the gate insulating layer; a semiconductor layer, which is formed between at least the source electrode and the drain electrode, and is in contact with the gate insulating layer, the source electrode, and the drain electrode; and a gate electrode, which is in contact with the gate insulating layer, and faces the semiconductor layer via the gate insulating layer, wherein the passivation layer contains a first passivation layer, which contains a first composite metal oxide containing Si, and an alkaline earth metal, and a second passivation layer, which is formed to be in contact with the first passivation layer, and contains a second composite metal oxide containing an alkaline earth metal, and a rare-earth element.

Abstract: Provided is a roller mill that is provided with: a rotary table; a raw coal adding tube that supplies solid fuel to the rotary table; and a roller that rotates about a rotating shaft by being pressed against a grinding surface of the rotary table and grinds solid fuel along with rotation of the rotary table. In such a roller mill, a position where an outer peripheral surface of the roller and the grinding surface of the rotary table come into contact with each other and a circumferential velocity of the outer peripheral surface equals a circumferential velocity of the grinding surface is located further to an inner circumferential side of the rotary table than a position where the outer peripheral surface and the grinding surface come into contact with each other at a center position in a width direction of the roller.

Abstract: A coating liquid for forming a metal oxide thin film includes: an inorganic indium compound; an inorganic calcium compound or an inorganic strontium compound, or both thereof; and an organic solvent.

Abstract: A vertical roller mill provided with a cyclone-type fixed separator that separates fine powder and allows the separated powder to flow out to the outside, the cyclone-type fixed separator being provided inside a housing, wherein the fixed separator is configured so that a solid-gas two-phase flow is introduced from a fixed blade inlet window opening on a cone into the inside and the solid-gas two-phase flow is swirled using a fixed blade attached in the inside vicinity of the fixed blade inlet window, whereby the fine powder flows out to the outside from a pulverized coal outlet in an upper portion of the vertical roller mill through the lower end side of an inner cylinder provided inside the cone, a surface layer in which the rebound coefficient of collided particles is higher than in an iron plate surface being formed in the outer surface of the inner cylinder.

Abstract: To provide a field-effect transistor, containing: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, both of which are configured to take out electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein work function of the source electrode and drain electrode is 4.90 eV or greater, and wherein an electron carrier density of the n-type oxide semiconductor is 4.0×1017 cm?3 or greater.