Patents by Inventor Shinji Uya
Shinji Uya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160028983Abstract: According to an embodiment, a solid-state image pickup device is provided. The solid-state image pickup device includes a sensor substrate, microlenses, and a flattened layer. The sensor substrate is provided with a plurality of photoelectric conversion elements arranged in a two-dimensional array shape. The microlenses are provided at positions facing light receiving surfaces of the plurality of photoelectric conversion elements, respectively, and collect incident light onto the photoelectric conversion elements. The flattened layer is provided on a light incident side of the microlenses and has a refractive index which is higher than a refractive index of air and is 1/1.3 times or less of a refractive index of the microlenses.Type: ApplicationFiled: July 6, 2015Publication date: January 28, 2016Applicant: Kabushiki Kaisha ToshibaInventors: Shinji UYA, Yusuke Kohyama
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Publication number: 20150263212Abstract: According to one embodiment, a substrate for semiconductor devices includes a P-type semiconductor substrate, a P-type or N-type semiconductor layer, and a P-type or N-type epitaxial layer. The P-type or N-type semiconductor layer is provided at a surface layer of the semiconductor substrate and has a resistance value lower than a resistance value of the semiconductor substrate. The P-type or N-type epitaxial layer is provided on a surface of the semiconductor layer and has a resistance value higher than the resistance value of the semiconductor layer.Type: ApplicationFiled: March 2, 2015Publication date: September 17, 2015Applicant: Kabushiki Kaisha ToshibaInventors: Shinji UYA, Nagataka Tanaka, Mokuji Kageyama, Hideo Numata
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Patent number: 9012925Abstract: A solid-state imaging device according to embodiments of the present disclosure includes a light receiving unit, a first charge holding film, and a second charge holding film. The light receiving unit converts the incident light to an electric current. The first charge holding film is formed above the light receiving unit and holds electric charges. The second charge holding film is formed on the first charge holding film and holds electric charges. Further, concentration of oxygen in the second charge holding film is higher than concentration of oxygen in the first charge holding film.Type: GrantFiled: March 6, 2013Date of Patent: April 21, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Masaki Kamimura, Shinji Uya, Tomoyasu Kudo
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Patent number: 9007502Abstract: A solid-state imaging device includes a plurality of unit pixels. Each unit pixel has a photodiode, a reading transistor, a floating diffusion, a capacitance adding transistor, and a reset transistor. The reading transistor reads signal electric charges from the photodiode. The floating diffusion accumulates the signal electric charges read from the reading transistor. The capacitance adding transistor selectively adds capacitance to the floating diffusion. The reset transistor resets an electric potential of the floating diffusion.Type: GrantFiled: November 19, 2009Date of Patent: April 14, 2015Assignee: Kabushiki Kaisha ToshibaInventors: Nagataka Tanaka, Shinji Uya
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Publication number: 20140110806Abstract: According to one embodiment, a solid-state imaging device includes a photoelectric conversion element, a fixed charge layer, a silicon nitride film, and a silicon oxide film. The photoelectric conversion element performs photoelectric conversion of converting incident light into the amount of charges corresponding to the amount of received light, and accumulates the charges. The fixed charge layer is formed on a light receiving surface side of the photoelectric conversion element, and holds negative fixed charges. The silicon nitride film is formed on a light receiving surface side of the fixed charge layer. The silicon oxide film is formed between the fixed charge layer and the silicon nitride film.Type: ApplicationFiled: April 22, 2013Publication date: April 24, 2014Applicant: Kabushiki Kaisha ToshibaInventors: Ryota WATANABE, Shinji UYA
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Publication number: 20130264670Abstract: A solid-state imaging device according to embodiments of the present disclosure includes a light receiving unit, a first charge holding film, and a second charge holding film. The light receiving unit converts the incident light to an electric current. The first charge holding film is formed above the light receiving unit and holds electric charges. The second charge holding film is formed on the first charge holding film and holds electric charges. Further, concentration of oxygen in the second charge holding film is higher than concentration of oxygen in the first charge holding film.Type: ApplicationFiled: March 6, 2013Publication date: October 10, 2013Applicant: Kabushiki Kaisha ToshibaInventors: Masaki Kamimura, Shinji Uya, Tomoyasu Kudo
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Patent number: 8216873Abstract: Light is illuminated from a back-surface side of a silicon substrate 4. A back-illuminated type imaging device 100 reads out, from a front-surface side of the silicon substrate 4, charges that are generated in the silicon substrate 4 in response to the illuminated light, so as to perform imaging. The back-illuminated type imaging device 100 includes pad portions 17 formed on the back surface of the semiconductor substrate 4, and a plurality of pillars 9 that are formed in the semiconductor substrate 4, are made of a conductive material and electrically connect wiring portions 12 formed on the front surface of the semiconductor substrate 4 and the pad portions 17 to each other.Type: GrantFiled: May 4, 2011Date of Patent: July 10, 2012Assignee: Fujifilm CorporationInventor: Shinji Uya
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Patent number: 8158452Abstract: A backside-illuminated imaging device, which performs imaging by illuminating light from a back side of a semiconductor substrate to generate electric charges in the semiconductor substrate based on the light and reading out the electric charges from a front side of the semiconductor substrate, is provided and includes: a back-side layer including an back-side element on the back side of the semiconductor substrate; a front-side layer including an front-side element on the front side of the semiconductor substrate; a support substrate above the front-side layer; a spacer, one end of which comes in contact with the front-side layer and the other end of which comes in contact with the support substrate, to form a space having a uniform distance between the semiconductor substrate and the support substrate; and an adhesive filled in at least a part of the space between the surface-side element formation layer and the support substrate.Type: GrantFiled: January 14, 2011Date of Patent: April 17, 2012Assignee: Fujifilm CorporationInventor: Shinji Uya
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Patent number: 8063959Abstract: An image pickup device including a semiconductor substrate that is irradiated with light from a first surface side thereof, and reading signal charges generated in the semiconductor substrate in accordance with the light from a second surface side thereof, wherein the semiconductor substrate includes: a photoelectric converting layer that includes a plurality of impurity diffusion layers on the second surface side of the semiconductor substrate, and that produces the signal charges by photoelectric conversion; and an embedded member that includes a light blocking material, and that is embedded in an impurity diffusion layer on a surface side of the photoelectric converting layer, the surface side facing the second surface side of the semiconductor substrate.Type: GrantFiled: May 23, 2008Date of Patent: November 22, 2011Assignee: Fujifilm CorporationInventor: Shinji Uya
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Patent number: 8030608Abstract: A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.Type: GrantFiled: June 23, 2010Date of Patent: October 4, 2011Assignee: FujiFilm CorporationInventors: Shinji Uya, Masanori Nagase, Yosuke Nakahashi, Toru Hachiya
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Publication number: 20110207250Abstract: Light is illuminated from a back-surface side of a silicon substrate 4. A back-illuminated type imaging device 100 reads out, from a front-surface side of the silicon substrate 4, charges that are generated in the silicon substrate 4 in response to the illuminated light, so as to perform imaging. The back-illuminated type imaging device 100 includes pad portions 17 formed on the back surface of the semiconductor substrate 4, and a plurality of pillars 9 that are formed in the semiconductor substrate 4, are made of a conductive material and electrically connect wiring portions 12 formed on the front surface of the semiconductor substrate 4 and the pad portions 17 to each other.Type: ApplicationFiled: May 4, 2011Publication date: August 25, 2011Inventor: Shinji UYA
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Patent number: 7956392Abstract: An imaging element comprises: an optical element substrate part in which the imaging element generates a signal charge by photo-electrically converting an incident light applied from one surface side of the optical element substrate part to read the signal charge from the other surface side of the optical element substrate part and picks up an image; and a CMOS circuit substrate part connected to the other surface side of the optical element substrate part so as to transfer the signal charge generated in the photoelectric conversion layer, wherein the optical element substrate part comprises: a photoelectric conversion layer to generate the signal charge by photo-electrically converting the incident light; a charge storage part that stores the signal charge; and a reading transistor that reads the signal charge stored in the charge storage part.Type: GrantFiled: April 16, 2008Date of Patent: June 7, 2011Assignee: Fujifilm CorporationInventor: Shinji Uya
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Publication number: 20110111547Abstract: A backside-illuminated imaging device, which performs imaging by illuminating light from a back side of a semiconductor substrate to generate electric charges in the semiconductor substrate based on the light and reading out the electric charges from a front side of the semiconductor substrate, is provided and includes: a back-side layer including an back-side element on the back side of the semiconductor substrate; a front-side layer including an front-side element on the front side of the semiconductor substrate; a support substrate above the front-side layer; a spacer, one end of which comes in contact with the front-side layer and the other end of which comes in contact with the support substrate, to form a space having a uniform distance between the semiconductor substrate and the support substrate; and an adhesive filled in at least a part of the space between the surface-side element formation layer and the support substrate.Type: ApplicationFiled: January 14, 2011Publication date: May 12, 2011Inventor: Shinji UYA
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Patent number: 7898051Abstract: An imaging device is provided and includes: a photoelectric conversion layer that has a silicon crystal structure and generates signal charges upon incidence of light; a multiplication and accumulation layer that multiplies the signal charges by a phenomenon of avalanche electron multiplication; and a wiring substrate that reads the signal charges from the multiplication and accumulation layer and transmits the read signal charges.Type: GrantFiled: May 2, 2008Date of Patent: March 1, 2011Assignee: FUJIFILM CorporationInventor: Shinji Uya
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Patent number: 7893516Abstract: A backside-illuminated imaging device, which performs imaging by illuminating light from a back side of a semiconductor substrate to generate electric charges in the semiconductor substrate based on the light and reading out the electric charges from a front side of the semiconductor substrate, is provided and includes: a back-side layer including an back-side element on the back side of the semiconductor substrate; a front-side layer including an front-side element on the front side of the semiconductor substrate; a support substrate above the front-side layer; a spacer, one end of which comes in contact with the front-side layer and the other end of which comes in contact with the support substrate, to form a space having a uniform distance between the semiconductor substrate and the support substrate; and an adhesive filled in at least a part of the space between the surface-side element formation layer and the support substrate.Type: GrantFiled: May 23, 2008Date of Patent: February 22, 2011Assignee: Fujifilm CorporationInventor: Shinji Uya
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Patent number: 7859027Abstract: A back irradiating type solid state imaging device comprises: a first semiconductor substrate; a plurality of photoelectric converting devices that receives a light incident from a back side of the first semiconductor substrate and are formed in a two-dimensional array on a surface side of the first semiconductor substrate; a CCD type signal reading section that are formed on the surface side of the first semiconductor substrate and reads detection signals of the photoelectric converting devices; and a MOS type signal reading section that are formed on the surface side of the first semiconductor substrate and reads detection signals of the photoelectric converting devices.Type: GrantFiled: March 13, 2008Date of Patent: December 28, 2010Assignee: FujiFilm CorporationInventor: Shinji Uya
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Publication number: 20100320507Abstract: An electronic device is formed by epitaxially growing a Si substrate on a Si layer of an SOI substrate in which the Si layer is deposited on a front surface of a substrate with an insulating layer interposed therebetween; forming an element on a front-surface side of the Si substrate; and forming a back-surface element aligned with respect to the element, on a back-surface side of the Si substrate after the substrate is etched. A mark is formed by etching and removing the Si layer and the insulating layer in a predetermined position of the SOI substrate. The element is formed using a concave part as a reference position. The concave part appears on the front surface of the Si substrate epitaxially grown on the mark. The back-surface element is formed using the mark as a reference position. The mark appears after the substrate is etched.Type: ApplicationFiled: August 19, 2010Publication date: December 23, 2010Inventor: Shinji Uya
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Publication number: 20100291730Abstract: A backside illuminated imaging device performs imaging by illuminating light from a back side of a p substrate to generate electric charges in the substrate based on the light and reading out the electric charges from a front side of the substrate. The device includes n layers located in the substrate and on an identical plane near a front side surface of the substrate and accumulating the electric charges; n+ layers between the respective n layers and the front side of the substrate, the n+ layers having an exposed surface exposed on the front side surface of the substrate and functioning as overflow drains for discharging unnecessary electric charges accumulated in the n layers; p+ layers between the respective n+ layers and the n layers and functioning as overflow barriers of the overflow drains; and an electrode connected to the exposed surface of each of the n+ layers.Type: ApplicationFiled: June 23, 2010Publication date: November 18, 2010Inventors: Shinji UYA, Masanori Nagase, Yosuke Nakahashi, Toru Hachiya
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Patent number: 7825001Abstract: An electronic device is formed by epitaxially growing a Si substrate on a Si layer of an SOI substrate in which the Si layer is deposited on a front surface of a substrate with an insulating layer interposed therebetween; forming an element on a front-surface side of the Si substrate; and forming a back-surface element aligned with respect to the element, on a back-surface side of the Si substrate after the substrate is etched. A mark is formed by etching and removing the Si layer and the insulating layer in a predetermined position of the SOI substrate. The element is formed using a concave part as a reference position. The concave part appears on the front surface of the Si substrate epitaxially grown on the mark. The back-surface element is formed using the mark as a reference position. The mark appears after the substrate is etched.Type: GrantFiled: February 15, 2008Date of Patent: November 2, 2010Assignee: Fujifilm CorporationInventor: Shinji Uya
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Patent number: 7804534Abstract: A solid-state imaging device comprises: a semiconductor substrate; a plurality of photoelectric conversion elements formed in a surface portion of the semiconductor substrate in the form of a two-dimensional array so as to comprise a plurality of sets, each comprising a subset of the photoelectric conversion elements arranged in one direction; charge transfer paths each formed at a side portion of the subset of the photoelectric conversion elements to cause a signal charge of the photoelectric conversion elements be read out when a readout pulse is applied and cause the signal charge which has been read out to be transferred when a transfer pulse is applied; and an electrically conductive light shielding film which is laminated on a surface of the semiconductor substrate through an insulating layer and has openings immediately above each of the photoelectric conversion elements.Type: GrantFiled: February 14, 2007Date of Patent: September 28, 2010Assignee: FUJIFILM CorporationInventors: Masanori Nagase, Shu Takahashi, Jiro Matsuda, Mitsuru Iwata, Shinji Uya