Abstract: A backside illuminated solid-state imaging device is provided and includes: a p-type semiconductor substrate; an imaging region that receives a subject light through a back side of the p-type semiconductor substrate to accumulate a signal corresponding to an amount of the received light; a signal reading element disposed in a front side of the p-type semiconductor substrate, the signal reading element reading out the signal from the imaging region; and an n-well region disposed in the front side of the p-type semiconductor substrate and in a periphery of the imaging region, the n-well region being biased to a positive voltage.

Abstract: An electronic device is formed by epitaxially growing a Si substrate on a Si layer of an SOI substrate in which the Si layer is deposited on a front surface of a substrate with an insulating layer interposed therebetween; forming an element on a front-surface side of the Si substrate; and forming a back-surface element aligned with respect to the element, on a back-surface side of the Si substrate after the substrate is etched. A mark is formed by etching and removing the Si layer and the insulating layer in a predetermined position of the SOI substrate. The element is formed using a concave part as a reference position. The concave part appears on the front surface of the Si substrate epitaxially grown on the mark. The back-surface element is formed using the mark as a reference position. The mark appears after the substrate is etched.

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein; and third impurity regions as defined herein.

Abstract: An n-type semiconductor substrate 11 has a p-type well 12 in which are formed a charge transfer channel 13, a flowing diffusion region 14 made of an n-type impurity region, an n-type buried region 16 and a reset drain region 15. Transfer gates 51 and 52 of a horizontal CCD and an output gate 41 are formed on the surface of the charge transfer channel 13, with an insulation film 20 interposed; reset electrodes 31 and 32 are formed on the surface of the buried region 16, again with the insulation film 20 interposed. The floating diffusion region 14 is connected to a source follower circuit 6. The reset electrodes 31 and 32 are provided adjacent to each other in the channel direction of a reset gate section 3 and can be driven independently of each other.

Abstract: A solid-state imaging device comprises: a semiconductor substrate; a plurality of photoelectric conversion elements formed in a surface portion of the semiconductor substrate in the form of a two-dimensional array so as to comprise a plurality of sets, each comprising a subset of the photoelectric conversion elements arranged in one direction; charge transfer paths each formed at a side portion of the subset of the photoelectric conversion elements to cause a signal charge of the photoelectric conversion elements be read out when a readout pulse is applied and cause the signal charge which has been read out to be transferred when a transfer pulse is applied; and an electrically conductive light shielding film which is laminated on a surface of the semiconductor substrate through an insulating layer and has openings immediately above each of the photoelectric conversion elements.

Abstract: A method of manufacturing a solid-state imaging device, wherein the solid-state imaging device comprising: a semiconductor substrate; a plurality of photodiodes that are formed on a surface of the semiconductor substrate so as to be arranged in an array form; and a light shielding film, provided on or above the surface of the semiconductor substrate, that has a plurality of openings in correspondence with respective ones of the photodiodes, the method comprising: laminating, on the surface of the semiconductor substrate, lamination layers including the light shielding film; opening through holes in the lamination layers, respectively, at positions corresponding to the photodiodes to form the openings in the light shielding film; forming a low refractive index material layer with a predetermined thickness isotropically on a side wall surface of each of the through holes; and filling a remaining hole portion of each of the through holes with a high refractive index material to form an optical waveguide for guid

Abstract: A spectral device is disposed above a semiconductor substrate formed with a number of photoelectric conversion elements. The spectral device has a plurality of spectral regions each corresponding to a plurality of photoelectric conversion elements, each of the spectral regions spectroscopically splitting light fluxes of a plurality of colors necessary for color imaging and contained in incidence light toward different directions, each of the spectroscopically split light fluxes becoming incident upon an associated photoelectric conversion element among the plurality of photoelectric conversion elements corresponding to each of the spectral regions.

Abstract: A solid-state image pickup device includes photoelectric converters in row-column matrix configuration, VCCDs, one for each column, a color filter disposed above each converter to form a color filter array including layouts each including n rows, and a drive circuit for conducting readout treating (m*n) rows as one set, and selecting from the sets a plurality of units symmetrically distributed. Electric charge is read from the plural units. A first readout operation reads electric charge from a first group of rows having asymmetric distribution. A j-row transfer operation transfers the electric charge for j rows. A second readout operation reads electric charge from a second group of rows having asymmetric distribution at positions to which the electric charges are transferred by the j-row transfer operation. The electric charges are added in the VCCDs.

Abstract: A manufacturing method of a solid-state imaging device, the device comprising: a semiconductor substrate; photodiodes each comprising a surface-side first conductivity type region formed adjacent to a surface of the semiconductor substrate and a second conductivity type region provided directly under the surface-side first conductivity type region; a second conductivity type vertical transfer region provided in the vicinity of the surface-side first conductivity type region; at least one first conductivity type inter-pixel isolation region provided under the vertical transfer region; and at least one first conductivity type overflow barrier region provided below the first conductivity type inter-pixel isolation region, the method comprising: a first step of forming the first conductivity type overflow barrier region in a semiconductor substrate; and a second step of ion-implanting first conductivity type impurity ions from a direction in which channeling tends to occur, to form at least one of the first condu

Abstract: A method of producing a solid-state image sensing device comprising a photoelectric conversion layer, the method comprising: laminating a first epitaxial layer on a semiconductor substrate; forming a part of the photoelectric conversion layer in the first epitaxial layer; forming a second epitaxial layer by epitaxial growth on the first epitaxial layer; and forming the remaining part of the photoelectric conversion layer in the second epitaxial layer to connect the remaining part of the photoelectric conversion layer to the part of the photoelectric conversion layer in the first epitaxial layer.

Abstract: The invention provides CCD type solid-state imaging apparatus comprises: photoelectric conversion elements; a plurality of first transfer paths extending in a first direction; and second transfer paths extending in a first direction; the first transfer paths and the second transfer paths respectively including a plurality of discretely formed first layer transfer electrode films and second layer transfer electrode films formed between the first layer transfer electrode films and whose ends are laminated on the ends of the adjacent first layer transfer electrode films via insulating films. The thickness of the insulating film between the first layer transfer electrode film and the second layer transfer electrode film constituting the second transfer path shown is smaller than the thickness of the insulating film between the first layer transfer electrode film and the second layer transfer electrode film constituting the first transfer path shown.

Abstract: A solid-state image sensing device provided with photoelectric conversion films stacked above a semiconductor substrate, comprising: first impurity regions as defined herein; second impurity regions as defined herein; signal charge reading regions as defined herein; and third impurity regions as defined herein.

Abstract: A semiconductor photoelectric conversion device includes: a number of photoelectric conversion elements formed in a principal surface of the semiconductor substrate; functional devices formed in the semiconductor substrate adjacent to photoelectric conversion elements; a light shielding film formed above the semiconductor substrate for shielding light above the functional devices and having a window above each photoelectric conversion element; and an effective wavelength shortening member disposed in the windows, and being made of transmissive material having a high refractive index, thereby shortening an effective wavelength of light passing through the windows.

Abstract: A semiconductor structure is formed which has photosensors, vertical CCDs, a horizontal CCD and a light shielding film. A first insulating layer made of additive-containing silicon oxide is formed on the semiconductor structure. It is reflowed and upward and downward convex inner lenses are formed on the reflowed first insulating layer and above the photosensors. A second insulating layer is formed which covers the inner lenses and is made of silicon oxide based insulator. It is planarized. Color filters are formed on the planarized surface of the second insulating layer. A transparent flat layer made of transparent material is formed covering the color filters. Micro lenses are formed on the transparent flat layer. A low refractive index layer having a refractive index lower than the micro lenses is formed covering the micro lenses. A transparent plate is disposed on it. The semiconductor structure disposed with the transparent plate is packaged.

Abstract: A solid state image pickup device is provided which includes: charge accumulation regions disposed in a semiconductor substrate in a matrix shape; a plurality of vertical transfer channels formed in the semiconductor substrate each in a close proximity to each column of the charge accumulation regions; vertical transfer electrodes formed above the vertical transfer channels; a channel protective impurity layer formed just under the vertical transfer channel and surrounding the charge accumulation region; one or more pixel separation impurity layers formed under the channel protective impurity layer and at a position facing the channel protective impurity layer; an overflow barrier region having a peak position of an impurity concentration at a position deeper than the pixel separation impurity layer, the peak position of the impurity concentration being at a depth of 3 ?m or deeper from a surface of the semiconductor substrate; and a horizontal CCD for transferring signal charges transferred from the vertical

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: In a solid-state image pick-up device in which a photoelectric converting section formed on a semiconductor substrate and a gate oxide film of a transfer path of a charge coupled device (CCD) which is close to the photoelectric converting section are constituted by a laminated film comprising a silicon oxide film (SiO) and a silicon nitride film (SiN), the gas oxide film has a single layer structure in which at least an end on the photoelectric converting section side of the gate oxide film does not contain the silicon nitride film.

Abstract: In a solid-state image pick-up device comprising a plurality of light receiving sensor sections, a vertical transfer path 12 formed close to each of the light receiving sensor sections, and a channel stopper 13 provided between the adjacent vertical transfer paths 12 and formed by an insulating layer having a trench structure, a conductive substance 15 to which a predetermined voltage is applied is buried in the insulating layer 14. The predetermined voltage is a negative voltage if a signal charge is an electron, and is a positive voltage if the signal charge is a hole. Alternatively, the predetermined voltage is a pulse having an opposite phase to that of a read pulse to be applied to a transfer electrode 17 of the vertical transfer path 12.