Abstract: According to one embodiment, a semiconductor light emitting element includes a light reflecting layer, first second, third and fourth semiconductor layers, first and second light emitting layers, and a first light transmitting layer. The second semiconductor layer is provided between the first semiconductor layer and the light reflecting layer. The first light emitting layer is provided between the first and second semiconductor layers. The first light transmitting layer is provided between the second semiconductor layer and the light reflecting layer. The third semiconductor layer is provided between the first light transmitting layer and the light reflecting layer. The fourth semiconductor layer is provided between the third semiconductor layer and the light reflecting layer. The second light emitting layer is provided between the third and fourth semiconductor layers. The light reflecting layer is electrically connected to one selected from the third and fourth semiconductor layers.

Abstract: According to one embodiment, a light emitting element includes n-type and p-type semiconductor layers and a light emitting unit. The light emitting unit is provided between the n-type semiconductor layer and the p-type semiconductor layer, the light emitting unit emits light with a peak wavelength of not less than 530 nm. The light emitting unit includes an n-side barrier layer and a first light emitting layer. The first light emitting layer includes a first barrier layer provided between the n-side barrier layer and the p-type semiconductor layer, a first well layer contacting the n-side barrier layer between the n-side barrier layer and the first barrier layer, a first AlGaN layer provided between the first well layer and the first barrier layer and including Alx1Ga1-x1N (0.15?x1?1), and a first p-side InGaN layer provided between the first AlGaN layer and the first barrier layer and including Inya1Ga1-ya1N (0<ya1?0.1).

Abstract: According to one embodiment, a semiconductor light emitting device includes first and second semiconductor layers, and a light emitting unit. The light emitting unit is provided between the first and second semiconductor layers and includes well layers and barrier layers. The barrier layers include p-side and n-side barrier layers, and a first intermediate barrier layer. The n-side barrier layer is provided between the p-side barrier layer and the first semiconductor layer. The first intermediate barrier layer is provided between the barrier layers. The well layers include p-side and n-side well layers, and a first intermediate well layer. The p-side well layer is provided between the p-side barrier layer and the second semiconductor layer. The n-side well layer is provided between the n-side barrier layer and the first intermediate barrier layer. The first intermediate well layer is provided between the first intermediate barrier layer and the p-side barrier layer.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of an n type including a nitride semiconductor, a first metal layer of an alloy containing Al and Au, and a second metal layer. The first metal layer is in contact with the first semiconductor layer. The second metal layer is in contact with the first metal layer. The second metal layer includes a metal different from Al. The first metal layer is disposed between the second metal layer and the first semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×1020 cm?3 and not more than 3×1020 cm?3. The Al concentration is 1/100 of the maximum value at a second position. A Mg concentration at the second position is not less than 2×1018 cm?3.

Abstract: According to one embodiment, a semiconductor light emitting device includes an electrode layer, a first semiconductor layer, a first elongated electrode, a second semiconductor layer, and a light emitting layer. The first semiconductor layer includes a crystal having a cleavage plane. The first semiconductor layer includes a first thin film portion and a thick film portion. The first thin film portion extends in a first direction perpendicular to a stacking direction from the electrode layer toward the first semiconductor layer. The first thin film portion has a first thickness. The thick film portion is arranged with the first thin film portion in a plane perpendicular to the stacking direction. An angle between the first direction and the cleavage plane is not less than 3 degrees and not more than 27 degrees. The first elongated electrode extends in the first direction in contact with the first thin film portion.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a bonding pad, a narrow wire electrode and a first insulating layer. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer and is in contact with the first semiconductor layer. The narrow wire electrode includes a first portion and a second portion. The first portion is provided on a surface of the first semiconductor layer not in contact with the light emitting layer and is in ohmic contact with the first semiconductor layer. The second portion is provided on the surface and located between the first portion and the bonding pad. The narrow wire electrode is electrically connected to the bonding pad. The first insulating layer is provided between the second portion and the first semiconductor layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a light emitting layer and a first semiconductor layer. The first semiconductor layer is arranged with the light emitting layer in a first direction. The first semiconductor layer includes a first portion and a second portion. The first portion and a second portion include a nitride semiconductor. The first portion has a first lattice polarity. The second portion has a second lattice polarity different from the first lattice polarity.

Abstract: According to one embodiment, a nitride semiconductor device includes a first layer and a functional layer. The first layer is formed on an amorphous layer, includes aluminum nitride, and has a compressive strain or a tensile strain. The functional layer is formed on the first layer and includes a nitride semiconductor.

Abstract: According to one embodiment, a semiconductor device includes a functional layer of a nitride semiconductor. The functional layer is provided on a nitride semiconductor layer including a first stacked multilayer structure provided on a substrate. The first stacked multilayer structure includes a first lower layer, a first intermediate layer, and a first upper layer. The first lower layer contains Si with a first concentration and has a first thickness. The first intermediate layer is provided on the first lower layer to be in contact with the first lower layer, contains Si with a second concentration lower than the first concentration, and has a second thickness thicker than the first thickness. The first upper layer is provided on the first intermediate layer to be in contact with the first intermediate layer, contains Si with a third concentration lower than the second concentration, and has a third thickness.

Abstract: According to one embodiment, a semiconductor light emitting device includes a stacked structure body, a first electrode, a second electrode, and a dielectric body part. The stacked structure body includes a first semiconductor layer, having a first portion and a second portion juxtaposed with the first portion, a light emitting layer provided on the second portion, a second semiconductor layer provided on the light emitting layer. The first electrode includes a contact part provided on the first portion and contacting the first layer. The second electrode includes a first part provided on the second semiconductor layer and contacting the second layer, and a second part electrically connected with the first part and including a portion overlapping with the contact part when viewed from the first layer toward the second layer. The dielectric body part is provided between the contact part and the second part.

Abstract: According to one embodiment, a semiconductor light emitting device includes a metal layer, a stacked structural body, a first electrode, a pad electrode, a first conductive layer, a second conductive layer and an insulating layer. The metal layer includes a major surface having a first region, a second region, a third region and a fourth region. The stacked structural body includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer includes a first portion and a second portion. The second semiconductor layer is provided between the first region and the first portion. The first electrode is provided between the second region and the second portion. The pad electrode is provided on the third region. The first conductive layer is provided between the second region and the first electrode and between the third region and the pad electrode.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer, a second semiconductor layer, a light emitting layer, a dielectric layer, a first electrode, a second electrode and a support substrate. The first layer has a first and second surface. The second layer is provided on a side of the second surface of the first layer. The emitting layer is provided between the first and the second layer. The dielectric layer contacts the second surface and has a refractive index lower than that of the first layer. The first electrode includes a first and second portion. The first portion contacts the second surface and provided adjacent to the dielectric layer. The second portion contacts with an opposite side of the dielectric layer from the first semiconductor layer. The second electrode contacts with an opposite side of the second layer from the emitting layer.

Abstract: According to one embodiment, a nitride semiconductor element includes a foundation layer, a functional layer and a stacked body. The stacked body is provided between the foundation layer and the functional layer. The stacked body includes a first stacked intermediate layer including a first GaN intermediate layer, a first high Al composition layer of Alx1Ga1-x1N (0<x1?1) and a first low Al composition layer. A compressive strain is applied to the first low Al composition layer. Unstrained GaN has a first lattice spacing. The Alx1Ga1-x1N (0<x1?1) when unstrained has a second lattice spacing. The first high Al composition layer has a third lattice spacing. An Al composition ratio of the first low Al composition layer is not more than a ratio of a difference between the first and third lattice spacings to a difference between the first and second lattice spacings.

Abstract: According to one embodiment, a method for manufacturing a semiconductor device is disclosed. The method can prepare a substrate unit including a base substrate, an intermediate crystal layer, and a first mask layer. The intermediate crystal layer has a major surface having a first region, a second region, and a first intermediate region. The first mask layer is provided on the first intermediate region. The method can implement a first growth to grow a first lower layer on the first region and grow a second lower layer on the second region. The first and second lower layers include a semiconductor crystal. The method can implement a second growth to grow a second upper layer while growing a first upper layer to cover the first mask layer with the first and second upper layers. The method can implement cooling to separate the first and second upper layers.

Abstract: According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type separated from the first semiconductor layer in a first direction, a light emitting layer provided between the first and second semiconductor layers, and a first intermediate unit provided between the first semiconductor layer and the light emitting layer. The light emitting layer includes a well layer including a nitride semiconductor including In. The first intermediate unit includes stacked bodies. The stacked bodies are arranged in the first direction. Each of the stacked bodies includes a first layer of Inx1Ga1-x1N, a second layer of Aly1Ga1-y1N provided between the first layer and the light emitting layer to contact the first layer, and a third layer of Aly2Ga1-y2N provided between the second layer and the light emitting layer to contact the second layer.

Abstract: A semiconductor light emitting element includes a base body, a first semiconductor layer, a second semiconductor layer, a first light emitting layer, a first conductive layer, a third semiconductor layer, a fourth semiconductor layer, a second light emitting layer, a second conductive layer, a first member, and a second member. The first member includes a first end portion and a second end portion. The first end portion is positioned between the base body and the first conductive layer and electrically connected to the first conductive layer, the second end portion not overlapping the second conductive layer. The second member includes a third end portion and a fourth end portion. The third end portion is positioned between the base body and the second conductive layer and electrically connected to the second conductive layer. The fourth end portion is electrically connected to the second end portion.

Abstract: According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes n-type and p-type semiconductor layers containing a nitride semiconductor and a light emitting layer. The emitting layer includes a barrier layer containing III group elements, and a well layer stacked with the barrier layer and containing III group elements. The barrier layer is divided into a first portion on an n-type semiconductor layer side and a second portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the second portion is lower than that of the first portion. The well layer is divided into a third portion on an n-type semiconductor layer side and a fourth portion on a p-type semiconductor layer side, an In composition ratio in the III group elements of the fourth portion is higher than that of the third portion.

Abstract: According to one embodiment, a semiconductor wafer includes a substrate, an AlN buffer layer, a foundation layer, a first high Ga composition layer, a high Al composition layer, a low Al composition layer, an intermediate unit and a second high Ga composition layer. The first layer is provided on the foundation layer. The high Al composition layer is provided on the first layer. The low Al composition layer is provided on the high Al composition layer. The intermediate unit is provided on the low Al composition layer. The second layer is provided on the intermediate unit. The first layer has a first tensile strain and the second layer has a second tensile strain larger than the first tensile strain. Alternatively, the first layer has a first compressive strain and the second layer has a second compressive strain smaller than the first compressive strain.