Abstract: Provided is a semiconductor device that is easily controlled. The semiconductor device includes a first switching device and a second switching device that are connected in series between a first potential and a second potential lower than the first potential, wherein each of the first and second switching devices includes a transistor region, and a diode region electrically connected in anti-parallel to the transistor region, the transistor region includes a first gate controlled by a first gate signal, and the diode region includes a diode gate controlled by a diode gate signal.

Abstract: To provide a semiconductor device that includes: a semiconductor substrate provided with a semiconductor portion that is at least one of a gate insulating film, a pn junction, or a drift layer of a terminal region; an insulating film provided on the semiconductor portion; a metal electrode having an opening that overlaps the semiconductor portion in plan view and is provided on a side opposite to the semiconductor portion with respect to the insulating film in cross-sectional view; and a plated electrode provided at at least a portion of an inside of the opening using the metal electrode as a material to be plated.

Abstract: A semiconductor device includes a semiconductor region provided with a semiconductor layer on a main surface side, and a first defect provided in the semiconductor layer and extending from the main surface side in a direction including a component in a thickness direction. The semiconductor region includes at least one of a diode region in which a cathode layer is provided as the semiconductor layer or an IGBT region in which a collector layer is provided as the semiconductor layer.

Abstract: Provided is a semiconductor device in which a first anode layer and a first contact layer are provided on a first main surface side in a diode region, and in which a second anode layer and a second contact layer are provided on the first main surface side in a boundary region. A concentration of impurities of a second conductive type of the second anode layer is lower than a concentration of impurities of the second conductive type of the first anode layer, or an occupied area ratio of the second contact layer with respect to the area where the emitter electrode is in contact with the semiconductor substrate in the boundary region is smaller than an occupied area ratio of the first contact layer with respect to the area where the emitter electrode is in contact with the semiconductor substrate in the diode region.

Abstract: Even if there is a change in the shape of a transfer mold power module is required, a change in a position of the electrode of the module is facilitated by separating electrode terminals of a power module from the electrodes and retrofitting the separated electrode terminals to the electrodes with high precision. A semiconductor device includes a mold resin enclosing a semiconductor chip, an electrode electrically connected to the semiconductor chip and exposed in an opening provided in the mold resin, and an electrode terminal having a contact portion that covers the electrode and is in electrical contact with the electrode, a plurality of projections formed to surround the contact portion and provided between a side surface of the opening and the contact portion, a contact end portion having the contact portion and an open end portion which is a different end portion from the contact end portion.

Abstract: A semiconductor device has an alternating region in which insulated gate bipolar transistor (IGBT) regions and diode regions are alternately arranged linearly in a plan view. In the alternating region, a width, in the first direction, of an IGBT region closest to the center of a cell region is equal to or smaller than widths of other IGBT regions in the first direction, and a width, in the first direction, of a diode region closest to a center of the cell region is equal to or smaller than widths of other diode regions in the first direction.

Abstract: A semiconductor device includes: a semiconductor substrate including an upper surface and a lower surface opposing each other and a drift layer of a first conductivity type; a base layer of a second conductivity type; an emitter layer of the first conductivity type and a contact layer of the second conductivity type; an active trench; dummy trenches; a trench gate electrode formed in the active trench; a dummy trench gate electrode formed in each of the dummy trenches; an embedded insulating film formed on the trench gate electrode in the active trench, formed on the dummy trench gate electrode in the dummy trench, and having an upper end lower than the upper surface; and an emitter electrode contacting the emitter layer on the upper surface and an inner wall of the active trench, and contacting the contact layer on the upper surface and an inner wall of the dummy trench.

Abstract: A first principal electrode and a first control electrode pad are formed on a first principal surface of the semiconductor chip. A second principal electrode and a second control electrode pad are formed on a second principal surface of the semiconductor chip. The second principal electrode and the second control electrode pad are respectively bonded to first and second metal patterns of an insulating substrate. Bonding sections of first and second wires overlap a bonding section of the second principal electrode or the second control electrode pad in plan view. Thickness of the first and second metal patterns is 0.2 mm or less.

Abstract: A semiconductor device includes a first electrode and a second electrode. The first electrode is connected to a collector layer and a first portion on the collector layer side of a cathode layer. The second electrode is connected to a second portion of the cathode layer excluding the first portion. A work function of the first electrode is larger than a work function of the second electrode, and one of the first electrode and the second electrode and the semiconductor substrate sandwich another of the first electrode and the second electrode in a thickness direction of the semiconductor substrate.

Abstract: According to the disclosure, a semiconductor device includes a semiconductor substrate including an IGBT region and a diode region, a first electrode provided on an upper surface of the semiconductor substrate and a second electrode provided on a back surface of the semiconductor substrate, wherein the diode region includes an n-type drift layer, a p-type anode layer provided on an upper surface side of the drift layer, and an n-type cathode layer provided on a back surface side of the drift layer, a lifetime control region having crystal defect density higher than crystal defect density of other portions of the drift layer and including protons is provided on a back surface side relative to a center in a thickness direction of the semiconductor substrate among the drift layer, and a maximum value of donor concentration of the lifetime control region is equal to or less than 1.0×1015/cm3.

Abstract: A semiconductor device includes a semiconductor substrate in which a first region having a freewheeling diode arranged therein, second regions having an IGBT arranged therein, and a withstand-voltage retention region surrounding the first region and the second regions in plan view are defined. The semiconductor substrate has a first main surface and a second main surface. The semiconductor substrate includes an anode layer having a first conductivity type, which is arranged in the first main surface of the first region, and a diffusion layer having the first conductivity type, which is arranged in the first main surface of the withstand-voltage retention region adjacently to the anode layer. A first trench is arranged in the first main surface on a side of the anode layer with respect to a boundary between the anode layer and the diffusion layer.

Abstract: According to one aspect of the present disclosure, a semiconductor device includes a substrate; a drift layer of a first conductivity type provided on the substrate; a base layer of a second conductivity type provided above the drift layer on the substrate; a source layer of the first conductivity type provided on an upper surface side of the base layer; a first electrode electrically connected to the source layer; a second electrode provided on the rear surface of the substrate; a gate electrode; a trench gate extending from an upper surface of the substrate to the drift layer; and a first bottom layer of the second conductivity type provided below the trench gate in the drift layer, wherein a first distance between a portion of the first bottom layer where an impurity concentration peaks in a thickness direction and the trench gate is larger than 1 ?m.

Abstract: A semiconductor device includes a semiconductor substrate in which a first region having a freewheeling diode arranged therein, second regions having an IGBT arranged therein, and a withstand-voltage retention region surrounding the first region and the second regions in plan view are defined. The semiconductor substrate has a first main surface and a second main surface. The semiconductor substrate includes an anode layer having a first conductivity type, which is arranged in the first main surface of the first region, and a diffusion layer having the first conductivity type, which is arranged in the first main surface of the withstand-voltage retention region adjacently to the anode layer. A first trench is arranged in the first main surface on a side of the anode layer with respect to a boundary between the anode layer and the diffusion layer.

Abstract: A diode region includes: an n-type first semiconductor layer provided on a second-main-surface side in the semiconductor substrate; an n-type second semiconductor layer provided on the first semiconductor layer; a p-type third semiconductor layer provided closer to a first main surface of the semiconductor substrate than the second semiconductor layer; a first main electrode that applies a first potential to the diode; a second main electrode that applies a second potential to the diode; and a dummy active trench gate provided so as to extend from the first main surface of the semiconductor substrate and reach the second semiconductor layer. The dummy active trench gate includes the third semiconductor layer that is not applied with the first potential to be in a floating state on at least one of two side surfaces, and the dummy active trench gate is applied with a gate potential of the transistor.

Abstract: When a positive gate voltage is applied to a first one of a first gate electrode and a second gate electrode, and current flows from a collector electrode to an emitter electrode, a semiconductor device applies a positive gate voltage to a second one of the first gate electrode and the second gate electrode. When a positive gate voltage is applied to the first one and current flows from the emitter electrode to the collector electrode, the semiconductor device applies voltage equal to or less than reference voltage to the second one.

Abstract: According to an aspect of the present disclosure, a semiconductor device includes a substrate including an IGBT region, and a diode region, a surface electrode provided on a top surface of the substrate and a back surface electrode provided on a back surface on an opposite side to the top surface of the substrate, wherein the diode region includes a first portion formed to be thinner than the IGBT region by the top surface of the substrate being recessed, and a second portion provided on one side of the first portion and thicker than the first portion.

Abstract: All of four of built-in gate resistance trenches function as practical built-in gate resistance trenches. A first end portion of each of four of the built-in gate resistance trenches is electrically connected to a wiring side contact region of a gate wiring via a wiring contact. A second end portion of each of four of the built-in gate resistance trenches is electrically connected to a pad side contact region of a gate pad via a pad contact. In each of four of the built-in gate resistance trenches, a distance between the wiring contact and the pad contact is defined as an inter-contact distance.

Abstract: In a semiconductor device according to the technology disclosed in the present specification, a temperature detection region is provided with a diffusion layer of a second conductivity type provided on a surface layer of a drift layer of a first conductivity type, a well layer of a first conductivity type provided on a surface layer of the diffusion layer and electrically connected to an anode electrode, and a cathode layer of a first conductivity type provided on a surface layer of the well layer and electrically connected to a cathode electrode.

Abstract: A semiconductor device includes a capacitance adjusting region. The capacitance adjusting region includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a plurality of control trench gates. The first semiconductor layer is provided as a surface layer at an upper surface of the semiconductor substrate. The second semiconductor layer is selectively provided at an upper surface of the first semiconductor layer. The second semiconductor layer contacts a side surface of each of the control trench gates. The first semiconductor layer and the second semiconductor layer are electrically connected to an emitter electrode of a transistor. A control trench electrode of at least one control trench gate is electrically connected to a gate electrode of the transistor.

Abstract: Provided is a semiconductor device having improved breakdown resistance during recovery operation. A semiconductor device according to the present application is a semiconductor device in which an insulated gate bipolar transistor region and a diode region are provided adjacent to each other. The insulated gate bipolar transistor region includes an emitter layer having a short-side direction in a first direction in a plan view. The diode region includes carrier injection suppression layer having a short-side direction in a second direction in a plan view. In a plan view, a width of the carrier injection suppression layer in the second direction is smaller than a width of the emitter layer in the first direction.