Abstract: A metal bend pipe having a bend portion bent in a semi-circular arc shape is provided, in which an identification part that enables one of the two end portions of the bend portion to be identified as the bending-start side or the bending-end side is provided, and the identification part is integrally formed as a protruding and/or recessed three-dimensional region. Thus, it is possible to easily and reliably identify which of the two end portions of the bend portion is the bending-start side or the bending-end side.

Abstract: A heat exchanger includes a tube expansion portion formed by expanding a heat transfer tube so that an outer peripheral surface of the heat transfer tube is pressed against an inner peripheral surface of a hole provided in a side wall portion of a case. The tube expansion portion includes first and second bulge portions positioned respectively on the inside and the outside of the side wall portion so as to sandwich the side wall portion in an axial length direction of the heat transfer tube and configured such that respective outer peripheral surfaces thereof partially bulge outward in a radial direction of the heat transfer tube, an end portion tip end of the heat transfer tube is positioned apart from the second bulge portion, and the end portion tip end and a part in the vicinity thereof are expanded so as to be included in a part of the tube expansion portion.

Abstract: A metal bend pipe having a bend portion bent in a semi-circular arc shape is provided, in which an identification part that enables one of the two end portions of the bend portion to be identified as the bending-start side or the bending-end side is provided, and the identification part is integrally formed as a protruding and/or recessed three-dimensional region. Thus, it is possible to easily and reliably identify which of the two end portions of the bend portion is the bending-start side or the bending-end side.

Abstract: A manufacturing method for a pipe structure includes a pipe bending step for implementing for a plurality of times a bending process of bending a part of a straight pipe by wrapping the part around a peripheral surface of a rolling block to form a plurality of bend portions in intermediate locations along a longitudinal direction of the pipe. When a final bending process is implemented during the pipe bending step, a position of a rear end portion of the pipe is determined, and relative positions of the pipe and the rolling block in a predetermined y direction are controlled on the basis of the position of the rear end portion so that after the bending process, a y-direction position of the rear end portion is aligned with a y-direction position of the front end portion.

Abstract: A round metal pipe 1 including a bend portion 10 is configured such that on an axial direction cross-section of the bend portion 10, an outer half portion 11b of a peripheral wall portion 11 of the bend portion 10 has an outwardly projecting, non-circular arc shape in which a central portion in a y direction, which is orthogonal to a bend radius direction x of the bend portion 10, forms an outermost peripheral portion 13, and a distance Lb from respective intermediate portions 15 between the outermost peripheral portion 13 and a pair of proximal end portions 14 of the outer half portion 11b to a pipe center O is shorter than a distance La from the outermost peripheral portion 13 to the pipe center O. Thus, advantages such as suppressing reductions in the sectional area and minimum inside width of the bend portion 10 and reducing flow path resistance can be obtained, and the round metal pipe 1 can be manufactured easily and appropriately.

Abstract: A heat exchanger includes a tube expansion portion formed by expanding a heat transfer tube so that an outer peripheral surface of the heat transfer tube is pressed against an inner peripheral surface of a hole provided in a side wall portion of a case. The tube expansion portion includes first and second bulge portions positioned respectively on the inside and the outside of the side wall portion so as to sandwich the side wall portion in an axial length direction of the heat transfer tube and configured such that respective outer peripheral surfaces thereof partially bulge outward in a radial direction of the heat transfer tube, an end portion tip end of the heat transfer tube is positioned apart from the second bulge portion, and the end portion tip end and a part in the vicinity thereof are expanded so as to be included in a part of the tube expansion portion.

Abstract: A heat transfer tube of a heat exchanger is provided with a first and a second annular convex portions of which outer diameters are partially expanded. The first annular convex portion is positioned on an inner face side of a side plate portion of a case of the heat exchanger and is engaged with a circumferential edge portion of a first hole portion provided for the side plate portion, or the first annular convex portion contacts under pressure with an inner circumferential face of the first hole portion. The second annular convex portion is positioned on an outer face side of a header constituting member and is engaged with a circumferential edge portion of a second hole portion. Thus the side plate portion, the heat transfer tube, and a header are relatively fixed by a simple means.

Abstract: A heat transfer tube of a heat exchanger is provided with a first and a second annular convex portions of which outer diameters are partially expanded. The first annular convex portion is positioned on an inner face side of a side plate portion of a case of the heat exchanger and is engaged with a circumferential edge portion of a first hole portion provided for the side plate portion, or the first annular convex portion contacts under pressure with an inner circumferential face of the first hole portion. The second annular convex portion is positioned on an outer face side of a header constituting member and is engaged with a circumferential edge portion of a second hole portion. Thus the side plate portion, the heat transfer tube, and a header are relatively fixed by a simple means.

Abstract: A lower clad, cores, and an upper clad are formed by a chemical vapor deposition method (CVD method). At least one of the additional amount of oxygen, the additional amount of nitrogen, and the additional amount of silicon of a silicon oxynitride film is adjusted so that the cores have a desired higher refractive index than those of the clads. Further, end point detectors are formed which become etching stoppers of dry etching in pattern forming the cores.

Abstract: The method for fabricating a micro machine comprises the step of burying an oxide film 54 in a first semiconductor substrate 6, the step of bonding the first semiconductor substrate to the second semiconductor substrate with an insulation film 18 therebetween, the step of forming a first mask 66 with an opening in a first region and a second region on both sides of the first region, the step of etching the first semiconductor substrate with a first mask 66 and an oxide film 54 as a mask to thereby form a spring portion 20a integral with the first semiconductor substrate between the oxide film and the insulation film to thereby form a torsion bar including the spring portion, the step of forming a second mask 74 with an opening in the first region and the second region, the step of etching the second semiconductor substrate by using the second mask 74, and the step of etching the insulation film 18 in the first region and the second region. The thickness of the torsion bar can be easily controlled.

Abstract: In the semiconductor storage device, a dummy P+ diffusion region which does not contribute to a storage operation is formed in the vicinity of two P+ diffusion regions constituting a storage node. Moreover, a dummy N+ diffusion region which does not contribute to the storage operation is formed in the vicinity of N+ diffusion regions FL210 and FL220 constituting a storage node. Consequently, a part of electrons generated in a P well region PW by irradiation of ? rays or neutron rays can be collected into the dummy N+ diffusion region FL250, and a part of holes generated in an N well region NW by the irradiation of the ? rays or the neutron rays can be collected into the dummy P+ diffusion region FL150.

Abstract: A memory device that consumes no wasteful power in selecting memory cells and achieves high operating speed and size and cost reductions, is provided. In reading of memory cell information, only a single memory cell in a single local block is activated through a read word line. Specifically, AND circuits are provided in correspondence with all memory cells. Each AND circuit receives as its inputs a block select signal for selecting one of the local blocks and an in-block memory cell select signal for selecting one of the memory cells in each local block in a common manner among the local blocks. The outputs from the AND circuits are applied to read word lines. Unselected memory cells are not activated and therefore no current flows from those memory cells to local read bit lines, thereby preventing wasteful power consumption.

Abstract: A MOS transistor, an insulating film and a connecting plug are formed on a silicon substrate, and a surface of the insulating film undergoes a CMP polishing, followed by formation of reflectors. Thereafter, a SiN film is formed as a cover film on the reflectors. Next, SOG is coated onto the cover film, and gaps between the reflectors are buried by the SOG. Subsequently, an SOG film undergoes a CMP polishing using the cover film as a stopper, and a surface thereof is flattened.

Abstract: The method for fabricating a micro machine comprises the step of burying an oxide film 54 in a first semiconductor substrate 6, the step of bonding the first semiconductor substrate to the second semiconductor substrate with an insulation film 18 therebetween, the step of forming a first mask 66 with an opening in a first region and a second region on both sides of the first region, the step of etching the first semiconductor substrate with a first mask 66 and an oxide film 54 as a mask to thereby form a spring portion 20a integral with the first semiconductor substrate between the oxide film and the insulation film to thereby form a torsion bar including the spring portion, the step of forming a second mask 74 with an opening in the first region and the second region, the step of etching the second semiconductor substrate by using the second mask 74, and the step of etching the insulation film 18 in the first region and the second region. The thickness of the torsion bar can be easily controlled.

Abstract: In a semiconductor device, formed are a lower capacitor electrode on an element isolation film on a silicon substrate, a capacitor insulating film and an upper capacitor electrode. A silicon oxide film is formed on the entire surface of the silicon substrate. On the silicon oxide substrate, formed is a resist pattern that covers a region extending from the inside of a periphery of the upper capacitor electrode to the outside of the periphery thereof. Sidewalls that cover side faces of a gate electrode and the lower capacitor electrode, and a sidewall that covers a side face and an upper periphery of the upper capacitor electrode, are formed by performing anisotropic etching.

Abstract: A memory device that consumes no wasteful power in selecting memory cells and achieves high operating speed and size and cost reductions, is provided. In reading of memory cell information, only a single memory cell in a single local block is activated through a read word line. Specifically, AND circuits are provided in correspondence with all memory cells. Each AND circuit receives as its inputs a block select signal for selecting one of the local blocks and an in-block memory cell select signal for selecting one of the memory cells in each local block in a common manner among the local blocks. The outputs from the AND circuits are applied to read word lines. Unselected memory cells are not activated and therefore no current flows from those memory cells to local read bit lines, thereby preventing wasteful power consumption.

Abstract: To solve the problem that when a high temperature heat treatment is avoided, a substrate leak current increases due to the interfacial level generated with a plasma damage and thereby clearness of the CMOS image sensor is deteriorated. There is provided a CMOS image sensor characterized in using an epitaxial wafer as an element substrate, and more particularly to a CMOS image sensor characterized in that a tungsten layer is formed after formation of a contact hole used for connection between the elements in the element substrate and wirings and after the tungsten layer is removed from the area other than the contact hole, the annealing is conducted under the nitrogen and hydrogen atmosphere or under the hydrogen atmosphere.

Abstract: A lower clad, cores, and an upper clad are formed by a chemical vapor deposition method (CVD method). At least one of the additional amount of oxygen, the additional amount of nitrogen, and the additional amount of silicon of a silicon oxynitride film is adjusted so that the cores have a desired higher refractive index than those of the clads. Further, end point detectors are formed which become etching stoppers of dry etching in pattern forming the cores.

Abstract: In a semiconductor device, formed are a lower capacitor electrode on an element isolation film on a silicon substrate, a capacitor insulating film and an upper capacitor electrode. A silicon oxide film is formed on the entire surface of the silicon substrate. On the silicon oxide substrate, formed is a resist pattern that covers a region extending from the inside of a periphery of the upper capacitor electrode to the outside of the periphery thereof. Sidewalls that cover side faces of a gate electrode and the lower capacitor electrode, and a sidewall that covers a side face and an upper periphery of the upper capacitor electrode, are formed by performing anisotropic etching.

Abstract: The present invention relates to a reflection type liquid crystal display for displaying images by reflecting the external light and a fabricating method thereof and its object is to provide a liquid crystal display and a fabricating method thereof which can prevent a color tone of the reflection light and the like from a deterioration by surely absorbing an incident light from a gap between display electrodes. After forming a interlayer insulating film 24 on a source electrode 22 of FET formed on a silicon substrate 1 and planarizing the surface thereof by a CMP and the like, an insulating reflection preventing film 26 is formed. The source electrode 22 and a metal layer 29 are connected by embedding a connecting conductor 30 at a through-hole passing through the reflection preventing film 26 and the interlayer insulating film 24. Similarly, After forming an interlayer insulating film 24′ on the metal layer 29 and planarizing thereon, an insulating reflection preventing film 26′ is formed.