Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

Abstract: An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system.

Abstract: In an examining apparatus, an electron gun irradiates an intended position of an information recording medium with an electron beam. A stage holds the information recording medium such that the information recording medium can be moved along a rotation direction and a radial direction. A detector detects electrons which have acquired information of a surface of the information recording medium by irradiating the information recording medium with the electron beam. An image producing unit acquires an image of the surface of the information recording medium based on the electrons detected by the detector. The examining apparatus can examine as to whether or not a defect of an information recording medium such as a CD and a DVD is present, but also can examine a shape of the defect thereof. The examining apparatus can also examine an information recording medium having a large storage capacity.

Abstract: The present disclosure provides a stage device applicable to a semiconductor manufacturing apparatus. A stage device 10 comprises a Y-axis stage 20 and an X-axis stage 40, the Y-axis stage 20 including a fixed component 21 and a movable component 26 movable along the Y-axis, the X-axis stage 40 including a fixed component 41 and a movable component 43 movable along the X-axis, wherein the fixed component 41 of the X-axis stage 40 is disposed on the movable component 26 of the Y-axis stage 20, the Y-axis is designed as a scanning axis, while the X-axis is designed as a stepping axis, and a non-contact sealing device is arranged between the fixed component 21 and the movable component 26 of the Y-axis stage 20.

Abstract: An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an E×B separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample.

Abstract: An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an ExB separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample.

Abstract: An electron beam inspection system of the image projection type includes a primary electron optical system for shaping an electron beam emitted from an electron gun into a rectangular configuration and applying the shaped electron beam to a sample surface to be inspected. A secondary electron optical system converges secondary electrons emitted from the sample. A detector converts the converged secondary electrons into an optical image through a fluorescent screen and focuses the image to a line sensor. A controller controls the charge transfer time of the line sensor at which the picked-up line image is transferred between each pair of adjacent pixel rows provided in the line sensor in association with the moving speed of a stage for moving the sample.

Abstract: A substrate inspection apparatus 1-1 (FIG.

Abstract: An electron beam apparatus such as a sheet beam based testing apparatus has an electron-optical system for irradiating an object under testing with a primary electron beam from an electron beam source, and projecting an image of a secondary electron beam emitted by the irradiation of the primary electron beam, and a detector for detecting the secondary electron beam image projected by the electron-optical system.

Abstract: A system for further enhancing speed, i.e. improving throughput in a SEM-type inspection apparatus is provided. An inspection apparatus for inspecting a surface of a substrate produces a crossover from electrons emitted from an electron beam source 25••1, then forms an image under a desired magnification in the direction of a sample W to produce a crossover. When the crossover is passed, electrons as noises are removed from the crossover with an aperture, an adjustment is made so that the crossover becomes a parallel electron beam to irradiate the substrate in a desired sectional form. The electron beam is produced such that the unevenness of illuminance is 10% or less. Electrons emitted from the sample W are detected by a detector 25•11.

Abstract: A substrate inspection apparatus 1-1 (FIG.

Abstract: The present invention provides an electron beam apparatus for irradiating a sample with primary electron beams to detect secondary electron beams generated from a surface of the sample by the irradiation for evaluating the sample surface. In the electron beam apparatus, an electron gun has a cathode for emitting primary electron beams. The cathode includes a plurality of emitters for emitting primary electron beams, arranged apart from one another on a circle centered at an optical axis of a primary electro-optical system. The plurality of emitters are arranged such that when the plurality of emitters are projected onto a straight line parallel with a direction in which the primary electron beams are scanned, resulting points on the straight line are spaced at equal intervals.

Abstract: Provided is an electron beam system, in which an electron beam emitted from an electron gun is irradiated to a stencil mask, and the electron beam that has passed through the stencil mask is magnified by an electron lens and then detected by a detector having a plurality of pixels so as to form an image of the sample.

Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

Abstract: An image collating center has a communication unit, a processing unit, and a memory unit. The processing unit accesses a geographic information database through a communication network, extracts appropriate geographic information from the geographic information database based on a picked-up image and additional information transmitted from an image provider, and simulatively generates a simulated image assumed to be viewed from the image provider. Further, the image collating center estimates the image pickup position and the image pickup attitude of the image provider through collating the simulated image with the picked-up image and returns the estimated image pickup position and image pickup attitude of the image provider to the image provider through the communication network.

Abstract: The present invention provides a stage device applicable to a semiconductor manufacturing apparatus. A stage device 10 comprises a Y-axis stage 20 and an X-axis stage 40, said Y-axis stage 20 including a fixed component 21 and a movable component 26 movable along the Y-axis, said X-axis stage 40 including a fixed component 41 and a movable component 43 movable along the X-axis, wherein the fixed component 41 of the X-axis stage 40 is disposed in the movable component 26 side of the Y-axis stage 20, the Y-axis is designed as a scanning axis, while the X-axis is designed as a stepping axis, and a non-contact sealing device is arranged between the fixed component 21 and the movable component 26 of the Y-axis stage 20.

Abstract: The present invention provides an electron beam apparatus for evaluating a sample surface, which has a primary electro-optical system for irradiating a sample with a primary electron beam, a detecting system, and a secondary electro-optical system for directing secondary electron beams emitted from the sample surface by the irradiation of the primary electron beam to the detecting system.

Abstract: An electron beam apparatus is provided for reliably measuring a potential contrast and the like at a high throughput in a simple structure. The electron beam apparatus for irradiating a sample, such as a wafer, formed with a pattern with an electron beam to evaluate the sample comprises an electron-optical column for accommodating an electron beam source, an objective lens, an ExB separator, and a secondary electron beam detector; a stage for holding the sample, and relatively moving the sample with respect to the electron-optical column; a working chamber for accommodating the stage and capable of controlling the interior thereof in a vacuum atmosphere; a loader for supplying a sample to the stage; a voltage applying mechanism for applying a voltage to the sample, and capable of applying at least two voltages to a lower electrode of the objective lens; and an alignment mechanism for measuring a direction in which dies are arranged on the sample.

Abstract: An apparatus for determining the attitude of an artificial satellite by narrowing attitude candidates to a correct one in a short time. The apparatus has star sensors, a star catalog data base, star identification sections in each of which star images output from the star sensors are collated with a star catalog with respect to each star sensor to output a group of corresponding candidates, attitude computation sections for computing a value of an attitude candidate of the artificial satellite with respect to each corresponding candidate, an attitude updating section for updating the value of the attitude candidate on the basis of the star images output from the star sensor and the star catalog, and an attitude propagation section for computing the value of the attitude candidate at the present sampling time from the value of the attitude candidate at the preceding sampling time and the artificial satellite's angular velocity.

Abstract: A global positioning system (GPS) receiving system which achieves an equivalent synchronization in time measurement of GPS signals utilizing software without requiring highly accurate synchronization for receiver clocks with time information embedded in the GPS signals. The GPS receiving system performs a relative navigation process after correcting a pseudorange with a time tag error which is attributable to inaccuracy of receiver clocks of first and second moving objects. A relative navigation process correcting an absolute error of a time tag with a clock bias is also described. A differential computation unit calculates a difference between the first pseudorange and the second pseudorange commonized by the time tag commonizing unit. Correction in a time tag error correction unit is performed for the selected GPS data with a common GPS satellite identification number.