Patents by Inventor Shosuke Endo
Shosuke Endo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220336238Abstract: A heating/cooling device includes: a chamber; a plurality of substrate holders provided inside the chamber to support substrates; a plurality of LED light sources provided outside the chamber to irradiate the substrates held on the substrate holders with LED light having a wavelength that heats the substrates; a plurality of transmission windows provided between the plurality of substrate holders and the plurality of LED light sources to transmit the LED light radiated from the LED light sources; and a plurality of gas distribution parts provided inside the chamber to distribute and supply a cooling gas to the substrates held on the substrate holders.Type: ApplicationFiled: August 6, 2020Publication date: October 20, 2022Inventors: Shosuke ENDO, Yohei MIDORIKAWA, Yohei NAKAGOMI, Yoshihiro KOBAYASHI, Yasuo NAKATANI, Susumu SAITO, Chanseong AHN, Yuta TAKAHASHI, Takahiro KIJIMA
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Patent number: 7337745Abstract: A susceptor 24 includes a heater 38 disposed in a planar state, upper and lower ceramic-metal composites 40A and 40B disposed so as to sandwich the heater 38 from above and from below, and a ceramic electrostatic chuck 28 for attracting and holding an object to be treated, W. The electrostatic chuck is joined to an upper surface of the upper ceramic-metal composite 40A. The electrostatic chuck 28 has nearly the same coefficient of linear thermal expansion as that of the upper ceramic-metal composite 40A. Thus, peeling or cracking of the electrostatic chuck 28 due to the difference in thermal expansion and contraction between the electrostatic chuck 28 and the upper ceramic-metal composite 40A can be prevented.Type: GrantFiled: September 22, 2000Date of Patent: March 4, 2008Assignee: Tokyo Electron LimitedInventors: Mitsuaki Komino, Hideaki Amano, Shosuke Endo, Toshiaki Fujisato, Yasuharu Sasaki
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Patent number: 6544380Abstract: An apparatus for treating a substrate which includes a chamber and an opening formed in the chamber allowing the substrate to be conveyed into the chamber or taken out thereof. The chamber, also, includes a detachable baffle plate that fits around an electrode. For treatment to commence, the substrate is placed on the electrode and the chamber is exhausted of or supplied with gases. The electrode is then vertically lifted together with the baffle plate and the baffle plate is moved either to a position that is higher in level than an upper end of the opening of the chamber or to a position that is lower in level than a lower end of the opening of the chamber. This allows the baffle plate to shield a region near the opening of the chamber from a treatment region and allows reaction products to be adhered to the baffle plate.Type: GrantFiled: February 19, 2002Date of Patent: April 8, 2003Assignee: Tokyo Electron LimitedInventors: Masayuki Tomoyasu, Akira Koshiishi, Kosuke Imafuku, Shosuke Endo, Kazuhiro Tahara, Yukio Naito, Kazuya Nagaseki, Keizo Hirose, Mitsuaki Komino, Hiroto Takenaka, Hiroshi Nishikawa, Yoshio Sakamoto
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Publication number: 20020088547Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.Type: ApplicationFiled: February 19, 2002Publication date: July 11, 2002Applicant: TOKYO ELECTRON LIMITEDInventors: Masayuki Tomoyasu, Akira Koshiishi, Kosuke Imafuku, Shosuke Endo, Kazuhiro Tahara, Yukio Naito, Kazuya Nagaseki, Keizo Hirose, Mitsuaki Komino, Hiroto Takenaka, Hiroshi Nishikawa, Yoshio Sakamoto
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Patent number: 6391147Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.Type: GrantFiled: December 15, 2000Date of Patent: May 21, 2002Assignee: Tokyo Electron LimitedInventors: Kosuke Imafuku, Shosuke Endo, Kazuhiro Tahara, Yukio Naito, Kazuya Nagaseki, Keizo Hirose
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Publication number: 20010013504Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.Type: ApplicationFiled: December 15, 2000Publication date: August 16, 2001Applicant: TOKYO ELECTRON LIMITEDInventors: Kosuke Imafuku, Shosuke Endo, Kazuhiro Tahara, Yukio Naito, Kazuya Nagaseki, Keizo Hirose
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Patent number: 6264788Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the water.Type: GrantFiled: April 21, 2000Date of Patent: July 24, 2001Assignee: Tokyo Electron LimitedInventors: Masayuki Tomoyasu, Akira Koshiishi, Kosuke Imafuku, Shosuke Endo, Kazuhiro Tahara, Yukio Naito, Kazuya Nagaseki, Keizo Hirose, Mitsuaki Komino, Hiroto Takenaka, Hiroshi Nishikawa, Yoshio Sakamoto
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Patent number: 6106737Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.Type: GrantFiled: June 10, 1998Date of Patent: August 22, 2000Assignee: Tokyo Electron LimitedInventors: Masayuki Tomoyasu, Akira Koshiishi, Kosuke Imafuku, Shosuke Endo, Kazuhiro Tahara, Yukio Naito, Kazuya Nagaseki, Keizo Hirose, Mitsuaki Komino, Hiroto Takenaka, Hiroshi Nishikawa, Yoshio Sakamoto
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Patent number: 6074518Abstract: A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.Type: GrantFiled: January 4, 1999Date of Patent: June 13, 2000Assignees: Tokyo Electron Limited, Tokyo Electron Yamanashi LimitedInventors: Kosuke Imafuku, Shosuke Endo, Kazuhiro Tahara, Hiroshi Tsuchiya, Masayuki Tomoyasu, Yukio Naito, Kazuya Nagaseki, Ryo Nonaka, Keizo Hirose, Yoshio Fukasawa, Akira Koshiishi, Isao Kobayashi
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Patent number: 6035804Abstract: A process chamber apparatus includes a process chamber for processing a target such as a semiconductor wafer contained therein. The chamber includes an upper process chamber section having an annular contact surface at a lower end thereof and a lower process chamber section having an annular contact surface at an upper end thereof. A support mechanism supports the process chamber such that the lower section is movable against the upper section in a lateral direction between a process position where both sections are combined with each other and a separation position where both of the sections are separated apart from each other in a lateral direction. The contact surfaces of the upper and lower process chamber sections are inclined with respect to a plane including a movement direction of the lower process chamber section and are brought into contact with each other throughout entire circumferences of the contact surfaces at the process position.Type: GrantFiled: November 5, 1998Date of Patent: March 14, 2000Assignee: Tokyo Electron LimitedInventors: Junichi Arami, Shosuke Endo
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Patent number: 5698062Abstract: A plasma treatment apparatus comprising a chamber earthed, a vacuum pump for exhausting the chamber, a suscepter on which a wafer is mounted, a shower electrode arranged in the chamber, opposing to the suscepter, a unit for supplying plasma generating gas to the wafer on the suscepter through the shower electrode, a first radio frequency power source for adding radio frequency voltage, which has a first frequency f.sub.1, to both of the suscepter and the shower electrode, a second radio frequency power source for adding radio frequency voltage, which has a second frequency f.sub.2 higher than the first frequency f.sub.1, at least to one of the suscepter and the shower electrode, a transformer whose primary side is connected to the first radio frequency power source and whose secondary side to first and second electrodes, and a low pass filter arranged in a circuit on the secondary side of the transformer, and serving to allow radio frequency voltage, which has the first frequency f.sub.Type: GrantFiled: September 25, 1995Date of Patent: December 16, 1997Assignee: Tokyo Electron LimitedInventors: Takao Sakamoto, Kazuhiro Tahara, Kenji Momose, Kosuke Imafuku, Shosuke Endo, Yukio Naito, Kazuya Nagaseki, Keizo Hirose
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Patent number: D411516Type: GrantFiled: September 10, 1996Date of Patent: June 29, 1999Assignee: Tokyo Electron LimitedInventors: Kosuke Imafuku, Shosuke Endo, Kazuo Fukasawa