Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a plurality of conductive contacts overlying a semiconductor substrate. A plurality of first conductive wires is disposed on the plurality of conductive contacts. A plurality of conductive vias overlies the first conductive wires. An etch stop structure is disposed on the first conductive wires. The plurality of conductive vias extend through the etch stop structure. The etch stop structure includes a first etch stop layer, a first insulator layer, and a second etch stop layer. The first insulator layer is disposed between the first etch stop layer and the second etch stop layer.

Abstract: Various embodiments of the present application are directed towards an integrated chip (IC). The IC comprises a trench capacitor overlying a substrate. The trench capacitor comprises a plurality of capacitor electrode structures, a plurality of warping reduction structures, and a plurality of capacitor dielectric structures. The plurality of capacitor electrode structures, the plurality of warping reduction structures, and the plurality of capacitor dielectric structures are alternatingly stacked and define a trench segment that extends vertically into the substrate. The plurality of capacitor electrode structures comprise a metal component and a nitrogen component. The plurality of warping reduction structures comprise the metal component, the nitrogen component, and an oxygen component.

Abstract: Provided antibodies or antigen-binding fragment thereof specific for the variant exon v9 of the CD44 gene (CD44v9), antibody-drug-conjugate (ADC), and other derivative comprising the antibodies or antigen-binding fragment. Provided nucleic acid molecules encoding the same, and methods of making the same. Further provided pharmaceutical compositions comprising the same, and the use of the same in treating diseases or in the manufacture of a medicament for the treatment of the diseases, such as cancer.

Abstract: A part processing planning method includes the following steps. Firstly, a specific tolerance of a nominal size of a part is obtained. Then, a predetermined tolerance of each of processes is obtained. Then, using a process dimension chain establishing technique, at least one predetermined tolerance associated with the specification tolerance from the predetermined tolerances is obtained. Then, at least one predetermined tolerance associated with the specification tolerance is accumulated to obtain a size cumulative tolerance. Then, whether the size cumulative tolerance meets the specification tolerance is determined. Then, at least one predetermined tolerance associated with the specification tolerance is re-allocated when the cumulative tolerance does not meet the specification tolerance, such that the size cumulative tolerance is within the specification tolerance.

Abstract: An electronic device is provided and includes a first voltage trace, a second voltage trace, a first region electrode, a second region electrode, and a voltage source module. The second voltage trace is electrically insulated from the first voltage trace, the first region electrode is electrically connected to the first voltage trace, and the second region electrode is electrically connected to the second voltage trace. The voltage source module provides a first driving voltage to the first voltage trace and provides a second driving voltage to the second voltage trace, in which the first driving voltage is different from the second driving voltage. In a top-view direction of the electronic device, the first voltage trace is separated from the second voltage trace, and the first voltage trace and the second voltage trace are formed of a conductive layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a capacitor over a substrate. The capacitor includes a plurality of conductive layers and a plurality of dielectric layers. The plurality of conductive layers and dielectric layers define a base structure and a first protrusion structure extending downward from the base structure towards a bottom surface of the substrate. The first protrusion structure comprises one or more surfaces defining a first cavity. A top of the first cavity is disposed below the base structure.

Abstract: A continuous manufacturing equipment of an elastic three-dimensional fabric and a continuous manufacturing method thereof are disclosed. The continuous manufacturing equipment includes: a film conveying device having a thermal melting film and a conveying mechanism; a cutting device used for cutting a plurality of cutting gaps on the thermal melting film; a first fabric laminating device adhering an outer fabric on one surface of the thermal melting film; and a second fabric laminating device adhering an elastic fabric on another surface of the thermal melting film in a manner of elastically stretching and then elastically recovering. As such, effects of automatic, continuous, and simple steps in manufacturing and having a high yield rate are provided.

Abstract: A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.

Abstract: A data processing method and apparatus, a device, and a readable storage medium are provided. The method includes: performing figure acquisition on a first object in response to a login operation on an application client, and displaying a first virtual object associated with an acquired object figure of the first object (S101); displaying, in a case that a virtual conversation space is entered by using the first virtual object, one or more virtual objects in the virtual conversation space, the one or more virtual objects including the first virtual object, and a space figure of the virtual conversation space being associated with the one or more virtual objects (S102); and displaying a conversation message corresponding to each of the one or more virtual objects in the virtual conversation space (S103). A virtual object in an application is displayed efficiently in a diversified manner, and virtual object display modes are enriched.

Abstract: Graphic code processing includes displaying a graphic code scanning interface that is used for previewing at least one frame of acquired scanning image. In response to n graphic codes being included in the at least one frame of scanning image, recognition is performed on the n graphic codes to obtain n contact accounts. A service processing interaction region is displayed that includes contact controls corresponding to the n contact accounts. The service processing interaction region is configured to provide a service corresponding to at least one contact account in the n contact accounts. The n contact accounts can be obtained by scanning codes in batches to add friends and transmit files.

Abstract: The present disclosure relates to a method for forming an integrated chip. The method includes performing a first dicing cut along a first direction and extending into a semiconductor substrate from a first side of the semiconductor substrate. The method includes performing a second dicing cut along the first direction and extending into the semiconductor substrate from a second side of the semiconductor substrate, opposite the first side. The method includes performing a third dicing cut, separate from the second dicing cut, along the first direction and extending into the semiconductor substrate from the second side of the semiconductor substrate.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a substrate comprising sidewalls that define a trench. A capacitor comprising a plurality of conductive layers and a plurality of dielectric layers that define a trench segment is disposed within the trench. A width of the trench segment continuously increases from a front-side surface of the substrate in a direction towards a bottom surface of the trench.

Abstract: The present invention relates to a breeding method for generating gene-edited non-human animals. In particular, the method of the present invention features simultaneous reprograming and gene-editing carried out in somatic cells and subsequent subcloning and genotyping conducted at the in vitro cell stage to obtain precisely gene-edited induced pluripotency stem cells (iPSCs) which are then used in somatic nuclear transfer (SCNT) to generate a precisely gene-edited non-human animal embryo and a resultant gene-edited non-human animal.

Abstract: A semiconductor device includes first-type-channel field effect transistors (FETs) including a first first-type-channel FET including a first gate structure and a second first-type-channel FET including a second gate structure. The first first-type-channel FET has a smaller threshold voltage than the second first-type-channel FET. The first gate structure includes a first work function adjustment material (WFM) layer and the second gate structure includes a second WFM layer. At least one of thickness and material of the first and second WFM layers is different from each other.

Abstract: The invention provides a method of increasing an amount of oral immunoglobulin A (IgA) and/or inhibiting oral pathogens in a subject in need thereof, which utilizes a composition including a therapeutically effective amount of probiotics as an effective ingredient. The probiotics include Lactobacillus plantarum LPL28, which can efficiently increase the amount of oral IgA and/or inhibit the oral pathogens, and thus have a potential to prevent teeth cavities and/or periodontal diseases.

Abstract: A pixel array substrate, including a substrate, multiple conductors, a pixel driving circuit, a first pad, and a second pad, is provided. The substrate has a first surface, a second surface, and multiple through holes. The through holes extend from the first surface to the second surface. The conductors are respectively disposed in the through holes. The pixel driving circuit is disposed on the first surface of the substrate. The first pad and the second pad are disposed on the second surface of the substrate. The conductors include a first conductor, a second conductor, and a first dummy conductor. The first conductor is electrically connected to the pixel driving circuit and the first pad. The second conductor is electrically connected to the pixel driving circuit and the second pad. The first dummy conductor is overlapped with and electrically isolated from the pixel driving circuit.

Abstract: A method includes forming a semiconductor fin over a substrate; forming a gate structure over the semiconductor fin, the gate structure comprising: a first metallic layer; a second metallic layer over the first metallic layer, wherein the first metallic layer is a metal compound of a first element and a second element and the second metallic layer is a single-element metal of the second element; and an oxide layer between the first metallic layer and the second metallic layer.

Abstract: A display device includes a substrate, a transistor, a pixel electrode, a first conductive layer and a second conductive layer. The transistor is disposed on the substrate. The pixel electrode is disposed on the substrate. The pixel electrode is electrically connected to the transistor. The first conductive layer is disposed on the pixel electrode. The first conductive layer has a first slit. The second conductive layer is disposed on the pixel electrode. The second conductive layer has a second slit. The first slit and the second slit are overlapped with the pixel electrode.

Abstract: A power control system includes a processing module, a database, and a control module. A power control method thereof includes: obtain an electricity consumption of loads from the electricity consumption metering device through a processing module, and generate a scheduled electricity consumption status in an electricity consuming period of the electricity consuming field; the scheduled electricity consumption status includes a peak period and an off-peak period; create a load data in the database; the load data sorts the loads into a first electricity consuming group and a second electricity consuming group; the loads of the first electricity consuming group are defined as an essential load, and the loads of the second electricity consuming group are defined as a non-essential load; control the loads of the second electricity consuming group to run during the off-peak period through a control module based on the load data and the scheduled electricity consumption status.

Abstract: Embodiments of this application provide a method and apparatus, a terminal and a medium. The method includes the following steps. A target terminal displays, in a video session, a video session interface including an image display region for displaying images associated with one or more users participating in the video session. The target terminal displays a target virtual image of a user of the target terminal in the image display region. The target terminal acquires movement information of the user and controls the target virtual image displayed in the image display region to perform a target interaction action corresponding to the movement information of the user. Finally, the target terminal transmits movement data of the target virtual image performing the target interaction action, to terminals of the other users of the video session to render the target virtual image to perform the target interaction action on the corresponding terminals.