Patents by Inventor Shulai Zhao
Shulai Zhao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7417216Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: GrantFiled: March 21, 2006Date of Patent: August 26, 2008Assignee: Digirad CorporationInventors: Lars S. Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Patent number: 7297927Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: GrantFiled: August 31, 2006Date of Patent: November 20, 2007Assignee: Digirad CorporationInventors: Lars S. Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Patent number: 7256386Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: GrantFiled: May 10, 2004Date of Patent: August 14, 2007Assignee: Digirad CorporationInventors: Lars S. Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Publication number: 20070012866Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: ApplicationFiled: August 31, 2006Publication date: January 18, 2007Inventors: Lars Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Publication number: 20060175539Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: ApplicationFiled: March 21, 2006Publication date: August 10, 2006Inventors: Lars Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Publication number: 20060175677Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: ApplicationFiled: March 21, 2006Publication date: August 10, 2006Inventors: Lars Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Patent number: 7087887Abstract: Waveguide sensors having a side-polished coupling port at the waveguide cladding to sense a material based on material-specific optical attenuation by evanescent coupling at the coupling port.Type: GrantFiled: October 29, 2003Date of Patent: August 8, 2006Assignee: IFOS, Inc.Inventors: Bo Pi, Shulai Zhao, Zhihao Chen
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Publication number: 20060157811Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: ApplicationFiled: March 21, 2006Publication date: July 20, 2006Inventors: Lars Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Patent number: 7068868Abstract: Fiber sensors formed on side-polished fiber coupling ports based on evanescent coupling. Such sensors may be configured to measure various materials and may be used to form multi-phase sensing devices.Type: GrantFiled: November 12, 2003Date of Patent: June 27, 2006Assignee: IFOS, Inc.Inventors: Bo Pi, Wei-Cheng Wilson Lin, Zhihao Chen, Shulai Zhao
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Publication number: 20040206886Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: ApplicationFiled: May 10, 2004Publication date: October 21, 2004Applicant: Digirad Corporation, a Delaware corporationInventors: Lars S. Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Patent number: 6744948Abstract: Fiber tap monitors formed on side-polished fiber coupling ports based on evanescent coupling.Type: GrantFiled: June 20, 2002Date of Patent: June 1, 2004Assignee: Oluma, Inc.Inventors: Bo Pi, Shulai Zhao, Zheng Chen, Robert Morse, Jian Li
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Patent number: 6734416Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: GrantFiled: November 15, 2002Date of Patent: May 11, 2004Assignee: Digirad CorporationInventors: Lars S. Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Patent number: 6690857Abstract: Fiber optical devices formed on substrates fabricated with grooves that operate based on evanescent optical coupling through a side-polished fiber surface in each fiber involved.Type: GrantFiled: December 3, 2002Date of Patent: February 10, 2004Assignee: Oluma, Inc.Inventors: Shulai Zhao, Bo Pi
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Publication number: 20040008935Abstract: Fiber optical devices formed on substrates fabricated with grooves that operate based on evanescent optical coupling through a side-polished fiber surface in each fiber involved.Type: ApplicationFiled: December 3, 2002Publication date: January 15, 2004Applicant: Oluma, Inc., a Delaware corporationInventors: Shulai Zhao, Bo Pi
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Patent number: 6670258Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.Type: GrantFiled: April 20, 2001Date of Patent: December 30, 2003Assignee: Digirad CorporationInventors: Lars S. Carlson, Shulai Zhao, John Sheridan, Alan Mollet
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Patent number: 6630735Abstract: A semiconductor interconnection device having a semiconductor die, a plurality of epoxy bonds, and an array of insulating islands is disclosed. The semiconductor die has a plurality of conductive contacts. The plurality of epoxy bonds has a metallic substance such as silver. The epoxy bonds are configured to provide interconnection between the semiconductor die and an external structure. The plurality of epoxy bonds is selectively applied to the plurality of conductive contacts on the semiconductor die and corresponding conductive contacts on the external structure. The array of insulating islands is coupled to the plurality of conductive contacts. The islands are configured to prevent migration of the metallic substance from the plurality of epoxy bonds to the semiconductor die through the plurality of conductive contacts.Type: GrantFiled: April 7, 2000Date of Patent: October 7, 2003Assignee: Digirad CorporationInventors: Lars S. Carlson, Shulai Zhao
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Patent number: 6625349Abstract: Techniques for coupling optical energy between a side-polished port of a fiber in one substrate and a coupling port of a waveguide in another substrate.Type: GrantFiled: June 12, 2001Date of Patent: September 23, 2003Assignee: Oluma, Inc.Inventors: Shulai Zhao, Bo Pi
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Patent number: 6621951Abstract: Thin-film techniques in forming fiber devices that engage fibers to a substrate with different material properties. Structure buffering, diffusion bonding, and thickness monitoring may be achieved by such thin-film techniques.Type: GrantFiled: June 27, 2001Date of Patent: September 16, 2003Assignee: Oluma, Inc.Inventors: Shulai Zhao, Bo Pi
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Patent number: 6621952Abstract: Fiber optical devices formed on substrates fabricated with grooves that operate based on evanescent optical coupling through a side-polished fiber surface in each fiber involved. An index-changing liquid is used to control the evanescent optical coupling in response to a control signal.Type: GrantFiled: August 10, 2001Date of Patent: September 16, 2003Assignee: Oluma, Inc.Inventors: Bo Pi, Shulai Zhao
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Patent number: 6597833Abstract: Optical wavelength-division multiplexers and demultiplexers based on Mach-Zehnder interferometers via evanescent coupling through a side-polished fiber port of a fiber.Type: GrantFiled: September 26, 2001Date of Patent: July 22, 2003Assignee: Oluma, Inc.Inventors: Bo Pi, Shulai Zhao