Abstract: Fiber optical devices formed on substrates fabricated with grooves that operate based on evanescent optical coupling through a side-polished fiber surface in each fiber involved. A coupling control layer is formed between two fibers to control the evanescent coupling for optical switching operations.

Abstract: Optical Mach-Zehnder interferometers and related devices, systems that have at least one fiber integrated or engaged to a substrate fabricated with one or more grooves. An integrated optical monitoring mechanism may be implemented in such devices.

Abstract: Techniques for forming fiber devices that engage fibers to a substrate with similar material properties. A semiconductor template may be used to define positions and orientations of the fibers.

Abstract: Fiber optical devices formed on substrates fabricated with grooves that operate based on evanescent optical coupling through a side-polished fiber surface in each fiber involved. The fiber cladding under the side-polished fiber surface is designed to support a radial mode profile wider than a radial mode profile supported by adjacent fiber portions.

Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.

Abstract: Techniques and devices for integrating optical fibers on substrates with grooves for various optical applications. Two openings that penetrate through the substrate are formed at both ends of each groove to allow a fiber to pass from one side of substrate to another side. The fiber cladding of a fiber portion positioned in the groove can be removed to produce an optical coupling port.

Abstract: A semiconductor imaging device is disclosed. The device includes a substrate having at least first and second surfaces opposing each other, and a circuit layer. The substrate is doped to exhibit a first conductivity type. The substrate includes a conducting layer, a region, and a plurality of doped regions. The conducting layer includes a first type dopants incorporated near the first surface. The region includes a heavily doped area within the substrate near the second surface. The plurality of doped regions includes a second type dopants formed on the second surface. The circuit layer is formed over the second surface to provide gate contacts to and readout circuits for the plurality of doped regions. The readout circuit provides readout of optical signals from pixels.

Abstract: Optical Mach-Zehnder interferometers and related devices, systems that have at least one fiber integrated or engaged to a substrate fabricated with one or more grooves.

Abstract: Fiber optical devices formed on substrates fabricated with grooves that operate based on evanescent optical coupling through a side-polished fiber surface in each fiber involved.

Abstract: Techniques for coupling optical energy between a side-polished port of a fiber in one substrate and a coupling port of a waveguide in another substrate.

Abstract: Optical Mach-Zehnder interferometers and related devices, systems that have at least one fiber integrated or engaged to a substrate fabricated with one or more grooves.

Abstract: A semiconductor imaging device is disclosed. The device includes a substrate having at least first and second surfaces opposing each other, and a circuit layer. The substrate is doped to exhibit a first conductivity type. The substrate includes a conducting layer, a region, and a plurality of doped regions. The conducting layer includes a first type dopants incorporated near the first surface. The region includes a heavily doped area within the substrate near the second surface. The plurality of doped regions includes a second type dopants formed on the second surface. The circuit layer is formed over the second surface to provide gate contacts to and readout circuits for the plurality of doped regions. The readout circuit provides readout of optical signals from pixels.

Abstract: Ultra-low leakage current backside-illuminated semiconductor photodiode arrays are fabricated using a method of formation of a transparent, conducting bias electrode layer that avoids high-temperature processing of the substrate after the wafer has been gettered. As a consequence, the component of the reverse-bias leakage current associated with strain, crystallographic defects or impurities introduced during elevated temperature processing subsequent to gettering can be kept extremely low. An optically transparent, conductive bias electrode layer, serving as both an optical window and an ohmic backside equipotential contact surface for the photodiodes, is fabricated by etching through the polysilicon gettering layer and a portion of the thickness of heavily-doped crystalline silicon layer formed within, and near the back of, the substrate during the gettering process.

Abstract: Techniques and devices for integrating optical fibers on substrates with grooves for various optical applications. Two openings that penetrate through the substrate are formed at both ends of each groove to allow a fiber to pass from one side of substrate to another side. The fiber cladding of a fiber portion positioned in the groove can be removed to produce an optical coupling port.

Abstract: A semiconductor interconnection device having a semiconductor die, a plurality of epoxy bonds, and an array of insulating islands is disclosed. The semiconductor die has a plurality of conductive contacts. The plurality of epoxy bonds has a metallic substance such as silver. The epoxy bonds are configured to provide interconnection between the semiconductor die and an external structure. The plurality of epoxy bonds is selectively applied to the plurality of conductive contacts on the semiconductor die and corresponding conductive contacts on the external structure. The array of insulating islands is coupled to the plurality of conductive contacts. The islands are configured to prevent migration of the metallic substance from the plurality of epoxy bonds to the semiconductor die through the plurality of conductive contacts.