Abstract: An image pickup apparatus is provided, which comprises a plurality of image pickup areas formed on a same semiconductor chip and arranged in the horizontal and the vertical directions, each image pickup area having a plurality of pixels arranged in the horizontal and the vertical directions, a plurality of vertical scanning circuits which sequentially scan pixels in the vertical direction to scan a plurality of image pickup areas in the vertical direction independently from each other, a plurality of lenses, at least one of which is provided in each of the plurality of image pickup areas and which focuses light to form an image on the image pickup areas, and a driving circuit which drives the plurality of vertical scanning circuits so that at least a part of a scanning period of each of the plurality of vertical scanning circuits overlaps with each other.

Abstract: A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

Abstract: In a semiconductor device which has capacitors means respectively connected to multiple input terminals, and in which the remaining terminals of the capacitors are commonly connected to a sense amplifier, the capacitors and the sense amplifier are formed by utilizing a semiconductor layer on an insulating surface, whereby high-speed, high-precision processing of signals having a large number of bits supplied from the multiple input terminals is realized by a small circuit scale.

Abstract: A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

Abstract: This invention provides a liquid crystal display which comprises a first region including a display region, and a second region being outside the first region, wherein the first and second regions both contain liquid crystal in a polymer network, and a part of the polymer network of the second region is different in structure from the polymer network of the first region, and the part is present in the second region asymmetrically with respect to the first region, and a production method for a liquid crystal display, which comprises providing a liquid crystal material and a prepolymer material in a space between a pair of substrates at least one of which is transparent, and polymerizing the prepolymer material by scanning a first region including a display region and a second region outside the first region with a light beam which causes polymerization.

Abstract: Transistors (43, 44, 45) of an SOI type semiconductor integrated circuit or a liquid crystal display apparatus to which the SOI semiconductor integrated circuit is applied are prevented from leaking a current. A semiconductor region (41) is formed below at least some of a plurality of transistors through an insulating region 42, and changes in threshold value of the transistors (43, 44, 45) caused by a potential applied to the semiconductor region are adjusted. At this time, the transistors (43, 44, 45) have well potentials (45) fixed to a first potential in the circuit, and the semiconductor region is fixed to a second potential.

Abstract: A liquid crystal display apparatus comprises a first polymer-containing liquid crystal area forming a first area including a display area, and a second polymer-containing liquid crystal area including a second area other than the first area, and is characterized in that polymer of the first polymer-containing liquid crystal area and polymer of the second polymer-containing liquid crystal area respectively have network structures different from each other.

Abstract: A reflection type liquid crystal display device, having a first substrate having an array of a plurality of light reflecting pixel electrodes, a second substrate having an array of a plurality of microlenses, and liquid crystals sandwiched between the first and second substrates for modulating incident light entering between the first and second substrates and reflected by the pixel electrodes to form an optical display, wherein each of the light reflecting pixel electrodes includes a high reflectivity region formed near at a focal point upon which light incident upon a microlens is focussed, the high reflectivity region reflecting the incident light, and a low reflectivity region formed surrounding the high reflectivity region, the low reflectivity region limiting a reflection of incident light components of stray light to be caused by aberration among light passed through the microlens.

Abstract: A liquid crystal display device comprises a reflective type liquid crystal panel with pixels which are arranged in two-dimentionally and which modulate irradiated light utilizing polymer dispersed liquid crystal capable of exhibiting two conditions including scattering and unscattering. The device is provided with an optical member having a multiple-interference effect at a predetermined angle with respect to the surface of the reflective type liquid crystal panel.

Abstract: A visual axis detecting method and apparatus comprising a device that illuminates an eye of an observer with a scanning light source, a photoelectric conversion device that receives reflection light from the eye of the observer, and an arithmetic device that detects Purkinje images and an iris image or a pupil image of the observer's eye on the basis of an output from the photoelectric conversion device, and that detects a direction of a visual axis of the observer from positions of the detected images.

Abstract: A method of making a semiconductor device is disclosed in which the device has an insulated gate transistor in which source and drain regions are provided in a single crystal semiconductor layer formed on an insulating layer with a channel region interposed between the source and drain regions. The insulating layers just below the source and drain regions are made thicker than an insulating layer just below the channel region. The method uses substrate bonding to achieve the device.

Abstract: A projection type liquid crystal display apparatus comprises three light valves showing a same temperature level to eliminate color distortions at low cost without requiring a large space. Rays of light of R, G, and B from a light source are made to enter light valves of R, G and B respectively by way of reflector mirrors and field lenses for R, G and B and modulated by the light valves before they are combined to produce an image, which image is then projected onto a screen by means of a projection lens group. The liquid crystal light valves are connected with each other by way of a high thermal conductivity sheet member, which is held in contact with the rear surface of each of the liquid crystal light valves.

Abstract: An electronic circuit device includes first and second conductors and a high-resistance member arranged therebetween. The high-resistance member consists of a material which changes from a high resistivity state to a low resistivity state in accordance with a voltage applied between the first and second conductors.

Abstract: A semiconductor device having a semiconductor layer formed on a substrate having an insulating surface, comprises a first region formed by processing the semiconductor layer from one major surface thereof, and a second region formed by processing the semiconductor layer from the other major surface, the first and second regions cooperating to constitute a semiconductor function element, isolation region or the like.

Abstract: An optical apparatus includes at least an image display device, a light source for illuminating the image display device, a light-receiving device for receiving the light reflected from the eye of an observer, and a calculation device for calculating the line of sight of the observer based on the output of the light-receiving means. At least part of the illuminating light from the light source is utilized as the illuminating light for illuminating the eye of the observer.

Abstract: A liquid crystal display device comprises two parallel substrates holding a liquid crystal material filling space between two parallel substrates, wherein one of the two parallel substrates is provided, for each picture element, with a transparent electrode and a lightshielding layer which has an opening located inside the outer periphery of the transparent electrode as observed from a direction perpendicular to the two substrates, and the lightshielding layer is designed so that the distance from an outer periphery of the transparent electrode to an outer periphery of the opening is set substantially larger on the side where rubbing of one substrate is started than on the side where the rubbing is ended, whereas it is set substantially larger on the side where the rubbing of the other substrate is ended than on the side where the rubbing is started as observed from a direction perpendicular to the two substrates.

Abstract: A semiconductor device including: an insulated gate type transistor having a columnar semiconductor region formed on the main side of a semiconductor substrate, a gate electrode formed on the side surface of the columnar semiconductor region while interposing a gate insulating film and main electrode regions respectively formed on and formed below the columnar semiconductor region; and a memory element which is formed on the upper main electrode region and which can be broken electrically.

Abstract: This invention provides a transistor manufacture method comprising the steps of forming, on a semiconductor substrate, an insulating film being made open at least in an introducing portion through which an impurity for forming a drain region other than a lightly-doped region is introduced, then forming a gate electrode and a drain electrode each containing an impurity, and then introducing the impurity through between the gate electrode and the drain electrode to thereby form the lightly-doped region; and introducing the impurity from the drain electrode through the impurity introducing portion with heat treatment, to thereby form the drain region. A transistor manufactured by the above method is also provided.

Abstract: A small-size and large-capacitance capacitor is provided for the peripheral driving circuit of a liquid crystal display device. A capacitor exhibiting crystalline property is provided on a monocrystalline silicon in the peripheral driving circuit of a liquid crystal display device using an insulator film deposition process used to manufacture TFTs (thin-film transistors) of a display pixel portion and the peripheral driving circuit. The capacitor, using monocrystalline silicon as electrodes and an insulator on the monocrsytalline silicon as a dielectric, has a small size and a large capacitance as compared with a capacitor manufactured on amorphous silicon or monocrytalline silicon, and is thus capable of high quality display.

Abstract: There is provided a liquid crystal unit having an on-chip photodetector.On a transparent substrate are laid down a metallic wiring, an n-type a-Si, an a-SiGe, and a p-type a-Si successively, an insulating film is formed, and then a transparent electrode is formed to have a light detection region.