Abstract: A photodetection element includes a pixel region, a first absorption region, a first discharge electrode, a pixel neighboring region, a second absorption region, and a second discharge electrode. The pixel region is formed in a semiconductor substrate and internally generates an electron and a hole in accordance with the incident light. The pixel neighboring region is formed so as to be adjacent to the pixel region and internally generates an electron and a hole in accordance with the incident light. The second absorption region is formed in the pixel neighboring region and absorbs, of either of the electron and the hole generated in the pixel neighboring region, the carrier equal to a first discharge carrier as a second discharge carrier. The second discharge electrode is formed on the semiconductor substrate and discharges, from the second absorption region, the second discharge carrier absorbed in the second absorption region.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: The noise calculation unit applies a statistical process for the measurement signal of the first number of data to calculate the noise value. The calculation threshold setting unit sets the calculation threshold based on the noise value. The period determination unit determines a period where a difference between the measurement signal and a moving average value calculated in a previous cycle exceeds the calculation threshold, to be the non-calculation period of the baseline. The moving average calculation unit is configured such that the measurement signal in a period excluding the non-calculation period is moving-averaged for each second number of data to calculate the moving average value. The first number of data and the second number of data are set independently.

Abstract: To provide a method for efficiently utilizing bacterial cells and unused raw materials for culture in the manufacture of fermentation products.

Abstract: An internal-pressure rise prevention structure of a speed reducer according to the invention includes a speed reduction mechanism that decelerates rotation of an input part and transmits the decelerated rotation to an output part, and a container having a communication hole formed in a wall surface that defines an internal space for accommodating the speed reduction mechanism and lubricant. The communication hole is situated vertically above the level of the lubricant.

Abstract: A speed reducer according to one embodiment of the present invention includes a crankshaft and a speed reducing mechanism. The crankshaft includes a gear portion driven by rotation from a drive source and a journal portion formed integrally with the gear portion. The crankshaft rotates about an axis of the journal portion. The speed reducing mechanism decelerates rotation of the crankshaft and outputs the decelerated rotation.

Abstract: A light receiving unit receives a pulsed optical signal arriving from a search region. A branching unit generates, from a received light signal, a plurality of branch signals having signal intensities proportional to a signal intensity of the received light signal and different from one another. A conversion unit converts, from analog to digital, a signal fed via the individual path selected by a selection unit, and in accordance with a result of the conversion, a processing unit generates information regarding an object reflecting the optical signal. A control unit causes the selection unit to select one of the individual paths for which a determination unit determines that a magnitude of the fed signal is within an input range of the conversion unit and which provides the highest gain.

Abstract: In a signal processing device, a branch section generates, from an input signal which is a current signal, a plurality of branch signals that are proportional to the input signal and have different signal intensities, and supplies the plurality of branch signals to respective different individual paths. A selection section selects one of the plurality of individual paths and outputs a signal supplied through the selected individual path. A determination section determines whether in each of the plurality of individual paths, a magnitude of a signal supplied to the selection section is in a preset allowable range. A control section causes the selection section to select the individual path having a highest gain among the individual paths in which the magnitude of the signal is determined by the determination section to be in the allowable range.

Abstract: A micro light emitting diode (LED), including a first semiconductor layer doped with an n-type dopant; a second semiconductor layer doped with a p-type dopant; an active layer arranged between the first semiconductor layer and the second semiconductor layer, and configured to provide light; a first side surface including a vertical side surface of the first semiconductor layer; a second side surface tilted with respect to the first side surface, and including a first tilted side surface of the active layer and a second tilted side surface of the second semiconductor layer; an insulating layer arranged to surround the first side surface and the second side surface; and a reflective layer arranged to partially surround the insulating layer in an area of the insulating layer corresponding to the second side surface.

Abstract: A light receiving element array includes one or more unit element blocks. Each of the unit element blocks includes different light receiving elements with different element structures.

Abstract: An LED, a manufacturing method thereof, and a display device including an LED are provided. Specifically, the disclosure relates to a flip-chip LED with high efficiency including a current confinement structure and a manufacturing method thereof, and a display device including such an LED. In particular, a flip-chip LED according to the disclosure includes a resistive area that surrounds a light-emitting layer and restricts current flow from the light emitting layer to the sidewalls.

Abstract: Provided herein is a display apparatus including a light emitting diode and a lens for diffusing light generated from the light emitting diode. The lens includes a first emitting portion forming a first emitting surface, and a second emitting portion protruding from the first emitting portion and forming a second emitting surface, so that the light may be diffused by a protruding distance of the second emitting portion.

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

Abstract: According to an embodiment, a photon counting CT apparatus includes a scintillator, a photodiode array, a holder, a divider, and an image generator. The scintillator is configured to convert X-rays into light. The array includes first and second pixels. The first pixel includes a photodiode in a first range receiving the light emitted from the scintillator. The photodiode outputs an electrical signal based on the light. The second pixel includes a photodiode in a second range different from the first range. The holder is circuitry configured to hold a value of an electrical signal output by the second pixel. The divider circuitry is configured to count the number of photons of light incident on the first pixel by dividing an integrated value of electrical signals output by the first pixel by the held value. The image generator is circuitry configured to reconstruct an image based on the counted number.

Abstract: According to an embodiment, a radiation measuring apparatus includes a detector, comparators, a threshold controller, counters, and a generator. The detector includes plural detecting elements each configured to convert energy of incident radiation into a first electrical signal. The comparators correspond to the respective detecting elements, each comparator being configured to output a second electrical signal when a level of the corresponding first electrical signal is not less than a threshold. The threshold controller is configured to supply a first value as the threshold to the respective comparators at a first time, and supply a second value as the threshold to the respective comparators at a second time. The counters correspond to the respective comparators, each counter being configured to count the corresponding second electrical signal. The generator is configured to generate a pulse height frequency distribution of the radiation by using counts of the counters.

Abstract: An LED panel includes a panel body having a substrate, a plurality of LED elements and a mold, and a light absorbing layer formed at a lateral side of the panel body to absorb at least one of ambient light or light emitted from the plurality of LED elements. The light absorbing layer prevents a seam formed by a gap between the adjacent LED panels from being visible. The light absorbing layer absorbs the external light incident on the gap or absorbs the light emitted from the LED element to the gap.

Abstract: Provided herein is a display apparatus including a light emitting diode and a lens for diffusing light generated from the light emitting diode. The lens includes a first emitting portion forming a first emitting surface, and a second emitting portion protruding from the first emitting portion and forming a second emitting surface, so that the light may be diffused by a protruding distance of the second emitting portion.

Abstract: A waveform shaping filter according to an embodiment includes at least one filter stage and a control circuit. The filter stage includes a differentiation signal generation circuit, a proportional signal generation circuit, and an adder circuit. The differentiation signal generation circuit generates a differentiation signal obtained by amplifying a differentiation component of an input signal. The proportional signal generation circuit generates a proportional signal obtained by amplifying the input signal. The adder circuit outputs an output signal obtained by adding the proportional signal and the differentiation signal. The control circuit compares the output signal and a first detection level, detects at least one of an overshoot and an undershoot of the output signal, and controls a time constant of the filter stage, based on a detection result.

Abstract: According to an embodiment, a photon detecting element includes one or more avalanche photodiodes and a circuit. The circuit is connected between cathodes of the one or more avalanche photodiodes and an external power source. The circuit is configured in which a first temperature coefficient representing variation of a setting potential with respect to temperature variation when constant-current driving is performed so that electrical potential of the cathodes becomes equal to the setting potential is substantially the same as a second temperature coefficient representing variation of breakdown voltage of the one or more avalanche photodiodes with respect to temperature variation.