Abstract: A deep ocean current power plant comprises a current generator group, a floating midway platform, a generator anchorage system, a midway platform anchorage system, and at least one power transmission-and-distribution cable. The constructing procedure of the deep ocean current power plant comprises following steps of sea-cast anchoring and cable-numbering; platform assembling and undersea anchoring; current generator group anchoring; and testing and correcting a stability of whole structure.

Abstract: Infra-red images of tumors carry the information of normal and cancerous tissues in every pixel. We developed a Dual-Spectrum Heat Pattern Separation (DS-HPS) algorithm to quantify the energy from the area of the high temperature tissues, called qH map, and decompose the body surface into the high and normal temperature areas based on a pair of middle-wave Infra-red images and long-wave Infra-red images. Further, with longitudinal registration, we can detect the cancerous tissues and assess the chemotherapy treatment response on a pixel by pixel basis according to the change of the qH map derived by the DS-HPS algorithm. The preliminary result shows the area and the qH values in the high temperature area are decreased as the patients receive more chemotherapy. These suggest the proposed algorithm could capture the incremental or decremental of the energies emitted by the cancerous tissues, which has the potentials for chemotherapy assessment and early detection.

Abstract: A light emitting device for generating infrared light includes a substrate, a first metal layer, a dielectric layer and a second metal layer. The substrate has a first surface. The first metal layer is formed on the first surface of the substrate. The dielectric layer is formed on the first metal layer. A thickness of the dielectric layer is greater than a particular value. The second metal layer is formed on the dielectric layer. When the light emitting device is heated, the dielectric layer has a waveguide mode such that the infrared light generated by the light emitting device can be transmitted in the dielectric layer. A wavelength of the infrared light generated in the waveguide mode relates to the thickness of the dielectric layer.

Abstract: A light emitting device for generating infrared light includes a substrate, a first metal layer, a dielectric layer and a second metal layer. The substrate has a first surface. The first metal layer is formed on the first surface of the substrate. The dielectric layer is formed on the first metal layer. A thickness of the dielectric layer is greater than a particular value. The second metal layer is formed on the dielectric layer. When the light emitting device is heated, the dielectric layer has a waveguide mode such that the infrared light generated by the light emitting device can be transmitted in the dielectric layer. A wavelength of the infrared light generated in the waveguide mode relates to the thickness of the dielectric layer.

Abstract: This invention is an electricity generating organic light-emitting display device (OLED) consisting of vertically stacked layers including an organic light emitting device (OLED), an insulation layer, a solar cell and thin film transistors. The device can reduce the reflection of ambient light, improve the contrast of the signal, and enhance sun-light readability by allowing the ambient light to be absorbed by the solar cells. Furthermore, additional power will be generated by the solar cell through absorption of ambient light and backward emission of OLEDs. The device, without using the polarizer, can exhibit low reflectance characteristics over the visible region and high display contrast.

Abstract: The invention discloses a light emitting device including a substrate, a first metal layer, and an infrared light emitter. The substrate has a first surface, and the first metal layer is formed on the first surface of the substrate. The infrared light emitter is formed on the first metal layer and includes a dielectric metal interface consisting of a dielectric layer and a second metal layer. The first metal layer of the invention is capable of suppressing the background thermal radiation resulted from the substrate, such that the light emitting device can be operated at high temperature and then emits infrared with narrow bandwidth.

Abstract: A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.

Abstract: A polysilicon thin film fabrication method is provided, in which a heat-absorbing layer is used to provide sufficient heat for grain growth of an amorphous silicon thin film, and an insulating layer is used to isolate the heat-absorbing layer and the amorphous silicon thin film. A regular heat-conducting layer is used as a cooling source to control the crystallization position and grain size of the amorphous silicon thin film. Therefore, the amorphous silicon thin film can crystallize into a uniform polysilicon thin film, and the electrical characteristics of the polysilicon thin film can be stably controlled.

Abstract: An InAs/GaAs quantum dot light emitting diode and a method of fabricating the same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed by turning off an As shutter and using As background concentration for epitaxy, comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well, aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.

Abstract: An InAs/GaAs quantum dot light emitting diode and a method of fabricating the same are disclosed. The InAs/GaAs quantum dot light emitting diode which is formed by turning off an As shutter and using As background concentration for epitaxy, comprises a Si-doped GaAs substrate, a N-type structure, an undoped quantum well, aseries of quantum dot layers, spacer layers, a barrier layer and a P-type structure.

Abstract: The present invention relates to a method of fabricating polysilicon film by Nickel and Copper induced lateral crystallization for the TFT-LCD, comprising the step of: a) a thin (˜4 nm) Copper and Nickel being evaporated onto the substrate; b) a amorphous-silicon film (˜50 nm) being evaporated onto thereof obtained according to a); c) applying annealing at less than 600° C. to thereof obtained according to b) for fast fabricating poly-silicon film. It is approximately 10 times faster than that of Ni induced polysilicon. The present invention is to provide a low-temperature (<600° C.) fast growth rate process to convert the hydrogenated amorphous silicon (a-Si:H) films to polysilicon film for substantially time-saving process and industrial applicability.

Abstract: A method of fabricating a device with spherical quantum dots by a combination of gas condensation and an epitaxial technique includes the following steps: (a) a quantum dots growth step, when the quantum dots are grown on the substrate by a gas condensation method; (b) a quantum dots processing step, when an ultrasonic cleaner is used with an organic solvent to vibrate the substrate in which quantum dots have been grown in step (a), or the substrate in which quantum dots have been grown in step (a) is thermally annealed at a high temperature to obtain a thin layer of quantum dots; and (c) an epitaxial layer cover step, when an epitaxial layer is covered over the quantum dots processed by step (b) by an epitaxial technique. By virtue of the above processes, a device with completely spherical quantum dots is obtained.

Abstract: A method for fabricating a quantum dot infrared photodetector by using molecular beam epitaxy is provided. The method includes steps of growing a first gallium arsenide layer as a buffer layer on a gallium arsenide substrate, growing a first undoped aluminum gallium arsenide layer as a blocking layer on the first gallium arsenide layer, growing a quantum dot structure layer on the first undoped aluminum gallium arsenide layer at a specific temperature, and growing a second gallium arsenide layer as a contact layer on the quantum dot structure layer.

Abstract: A method of self-assembling silicon quantum dots comprises the steps of providing a substrate, forming a thin amorphous Si film, and forming a plurality of Si quantum dots by controlling the energy and the shooting numbers of an excimer laser during an annealing process, wherein the excimer laser emits light on the thin amorphous Si film.

Abstract: A method of self-assembling silicon quantum dots comprises the steps of providing a substrate, forming a thin amorphous Si film, and forming a plurality of Si quantum dots by controlling the energy and the shooting numbers of an excimer laser during an annealing process, wherein the excimer laser emits light on the thin amorphous Si film.

Abstract: The present invention provides a composite passivation film deposited at low temperatures (<150.degree. C.). A hydrogenated amorphous silicon nitride (a-SiN.sub.x :H) film is formed over a semiconductor device. Then a very thin layer (>6.4 nm) of an amorphous silicon hydrogen (a-Si:H) film is formed over the a-SiN.sub.x :H film. Such a composite passivation film can prevent semiconductor devices from oxidation due to percolation of moisture, and maintain the electric properties and stability of the semiconductor devices.

Abstract: A double four-quadrant angle position detector is disclosed. The angle position detector comprises a first orientation detector, a second orientation detector, and a detecting means. The first orientation detector is composed of two pairs of photo-detecting means, arranged on opposite sides along vertical and horizontal directions, respectively, to generate output currents according to the brightness level. Similarly, the second orientation detector can also generate output currents according to brightness level. The detecting means determines a first angle and a second angle according to these output currents and then compares the difference of the first angle and the second angle with a preset threshold. When the difference is greater than the preset threshold, it indicates that an image angle is passing through the sensor.

Abstract: A process for depositing a silicon dioxide (SiO.sub.2) film on a substrate by liquid phase deposition is developed. Silicic acid is used instead of SiO.sub.2 powder to saturate hydrofluorosilicic acid so as to shorten the period required for preparing the solution to 3 hours. Water is used to supersaturate the solution. The corresponding deposition rate of SiO.sub.2 is about 50 nm per hour.

Abstract: An image sensor comprised of an array of photo-sensing devices is devised to generate digital images of objects. Each photo-sensing device consists of four identically shaped photo-sensitive surfaces, each photo-sensing surface being shaped into an isosceles trapezoid having 45.degree. base angles. One photo-sensing device corresponds to one pixel of the digital image. Pixels that representing image edges can be directly located and orientations of image edges represented by those pixels can both be determined by arithmetically processing the values of electrical signals generated by the photo-detecting devices.