Patents by Inventor Soon Jae Kwon

Soon Jae Kwon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10150950
    Abstract: A method for culturing mesenchymal stem cells. The method includes isolating mesenchymal stem cells having a size of 8 ?m or less and culturing the mesenchymal stem cells in a medium containing calcium and magnesium and under a low oxygen condition. The method can significantly improve the proliferative capacity and differentiation potential of the mesenchymal stem cells.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: December 11, 2018
    Assignee: MEDIPOST CO., LTD
    Inventors: Yoon-Sun Yang, Won Il Oh, Hye Jin Jin, Soon-Jae Kwon, Miyeon Kim
  • Publication number: 20180286543
    Abstract: A method of preparing a MnB-based magnetic material, the method including the steps of preparing a mixture including manganese oxide and boron, and heat-treating the mixture under an inert atmosphere, a MnB-based magnetic material prepared thereby, and a material absorbing or shielding electromagnetic waves, or a semiconductor, electronic, communication, or display device including the MnB-based magnetic material, are provided.
    Type: Application
    Filed: December 16, 2016
    Publication date: October 4, 2018
    Applicant: LG Chem, Ltd.
    Inventors: Soon Jae Kwon, Juneho In, Byungkyu Lim, Pumsuk Park
  • Patent number: 9970690
    Abstract: A magnetic refrigerator, and a device including the same, include a hot-end heat exchanger, a cold-end heat exchanger, a magnetic material arranged so as to provide a temperature gradient between the hot-end heat exchanger and the cold-end heat exchanger, and a heat exchange medium, and satisfying the following Equation 1. k=Th/Tc=?Sc/?Sh>1??EQUATION 1 In Equation 1, Th is a temperature of a hot-end heat exchanger, Tc is a temperature of a cold-end heat exchanger, ?Sh is an entropy change of a magnetic material at Th, and ?Sc is an entropy change of a magnetic material at Tc.
    Type: Grant
    Filed: December 9, 2014
    Date of Patent: May 15, 2018
    Assignees: Samsung Electronics Co., Ltd., National Institute for Materials Science
    Inventors: Soon-Jae Kwon, Numazawa Takenori
  • Publication number: 20160222353
    Abstract: A method for culturing mesenchymal stem cells. The method includes isolating mesenchymal stem cells having a size of 8 ?m or less and culturing the mesenchymal stem cells in a medium containing calcium and magnesium and under a low oxygen condition. The method can significantly improve the proliferative capacity and differentiation potential of the mesenchymal stem cells.
    Type: Application
    Filed: August 29, 2014
    Publication date: August 4, 2016
    Applicant: MEDIPOST CO., LTD.
    Inventors: Yoon-Sun YANG, Won II OH, Hye Jin JIN, Soon-Jae KWON, Miyeon KIM
  • Patent number: 9378879
    Abstract: A method of preparing a boron-doped transition metal pnictide magnetocaloric material, the method including: contacting a transition metal halide; a pnictogen element, a pnictogen oxide, or a combination thereof; a boron-containing oxide; and a reducing metal to provide a mixture; and heat treating the mixture to prepare the boron-doped transition metal pnictide magnetocaloric material.
    Type: Grant
    Filed: February 28, 2013
    Date of Patent: June 28, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soon-jae Kwon, Tae-gon Kim, Kyung-han Ahn
  • Publication number: 20150211771
    Abstract: A magnetic refrigerator, and a device including the same, include a hot-end heat exchanger, a cold-end heat exchanger, a magnetic material arranged so as to provide a temperature gradient between the hot-end heat exchanger and the cold-end heat exchanger, and a heat exchange medium, and satisfying the following Equation 1. k=Th/Tc=?Sc/?Sh>1??EQUATION 1 In Equation 1, Th is a temperature of a hot-end heat exchanger, Tc is a temperature of a cold-end heat exchanger, ?Sh is an entropy change of a magnetic material at Th, and ?Sc is an entropy change of a magnetic material at Tc.
    Type: Application
    Filed: December 9, 2014
    Publication date: July 30, 2015
    Applicant: National Institute for Materials Science
    Inventors: Soon-Jae KWON, Numazawa TAKENORI
  • Patent number: 8894957
    Abstract: Provided is a method of producing spherical nanophosphor particles having a uniform size distribution. When nanophosphor obtained using the method is used in a flat panel display, the flat panel display has higher screen brightness and a higher resolution.
    Type: Grant
    Filed: November 28, 2008
    Date of Patent: November 25, 2014
    Assignee: Samsung Display Co., Ltd.
    Inventors: Soon-jae Kwon, Hyun-sik Kim
  • Patent number: 8878196
    Abstract: A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.
    Type: Grant
    Filed: January 6, 2011
    Date of Patent: November 4, 2014
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byoung Lyong Choi, Byung Ki Kim, Kyung Sang Cho, Soon Jae Kwon, Jae Young Choi
  • Publication number: 20140023821
    Abstract: A magnetic composite including a magnetic material; and a binder including a metallic glass, a glass frit, or a combination thereof.
    Type: Application
    Filed: January 8, 2013
    Publication date: January 23, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Soon-Jae KWON, In-Gyu KIM, Eun-Sung LEE, Se-Yun KIM
  • Publication number: 20130264512
    Abstract: A method of preparing a boron-doped transition metal pnictide magnetocaloric material, the method including: contacting a transition metal halide; a pnictogen element, a pnictogen oxide, or a combination thereof; a boron-containing oxide; and a reducing metal to provide a mixture; and heat treating the mixture to prepare the boron-doped transition metal pnictide magnetocaloric material.
    Type: Application
    Filed: February 28, 2013
    Publication date: October 10, 2013
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Soon-jae Kwon, Tae-gon Kim, Kyung-han Ahn
  • Patent number: 8304473
    Abstract: A carbon/epoxy resin composition and a method of producing a carbon-epoxy dielectric using the same. The carbon/epoxy resin composition includes about 45 volume percent (volume %) to about 50 volume % of an epoxy composition, the epoxy composition including a bisphenol-based epoxy compound and an alicyclic epoxy compound, based on a total volume of the carbon/epoxy resin composition, about 2.0 volume % to about 3.1 volume % of carbon black, based on a total volume of the carbon/epoxy resin composition, about 80 parts by volume to about 104 parts by volume of an acid anhydride-based curing agent, based on 100 parts by volume of the epoxy composition, and about 1 part by volume to about 3 parts by volume of a tertiary alkylamine-based curing catalyst, based on 100 parts by volume of the epoxy composition.
    Type: Grant
    Filed: July 27, 2009
    Date of Patent: November 6, 2012
    Assignees: Samsung Electronics Co., Ltd., Samsung Electro-Mechanics Co., Ltd.
    Inventors: Yoo-Seong Yang, Eun-Sung Lee, Sang-Soo Jee, Soon-Jae Kwon
  • Patent number: 8187496
    Abstract: A method for preparing a metal oxide phosphor contemplates preparing a solution including a metal precursor compound and an ionic material and heating the solution under pressure using microwaves.
    Type: Grant
    Filed: April 13, 2009
    Date of Patent: May 29, 2012
    Assignee: Samsung Mobile Display Co., Ltd.
    Inventors: Hyun-Sik Kim, Soon-Jae Kwon, Soo-Yeon Seo
  • Patent number: 8017952
    Abstract: Disclosed are an inorganic electroluminescent diode and a method of fabricating the same. Specifically, this invention provides an inorganic electroluminescent diode, which includes a semiconductor nanocrystal layer formed of inorganic material, an electron transport layer or a hole transport layer formed on the semiconductor nanocrystal layer using amorphous inorganic material, and a hole transport layer or an electron transport layer formed beneath the semiconductor nanocrystal layer using inorganic material, and also provides a method of fabricating such an inorganic electroluminescent diode. According to the method of fabricating the inorganic electroluminescent diode of this invention, an inorganic electroluminescent diode can be fabricated while maintaining the properties of luminescent semiconductor material of the semiconductor crystal layer, and also an inorganic electroluminescent diode which is stably operated and has high luminescent efficiency can be provided.
    Type: Grant
    Filed: September 25, 2006
    Date of Patent: September 13, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyung Sang Cho, Byung Lyong Choi, Byoung Lyong Choi, Soon Jae Kwon
  • Publication number: 20110101303
    Abstract: A light-emitting device including a semiconductor nanocrystal layer and a method for producing the light-emitting device are provided. The light-emitting device includes a semiconductor nanocrystal layer whose voids are filled with a filling material. According to the light-emitting device, since voids formed between nanocrystal particles of the semiconductor nanocrystal layer are filled with a filling material, the occurrence of a current leakage through the voids is minimized, which enables the device to have extended service life, high luminescence efficiency, and improved stability.
    Type: Application
    Filed: January 6, 2011
    Publication date: May 5, 2011
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Byoung Lyong CHOI, Byung Ki KIM, Kyung Sang CHO, Soon Jae KWON, Jae Young CHOI
  • Patent number: 7910400
    Abstract: A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.
    Type: Grant
    Filed: December 18, 2006
    Date of Patent: March 22, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Soon-jae Kwon, Byoung-Iyong Choi, Kyung-sang Cho, Byung-ki Kim
  • Patent number: 7800302
    Abstract: An electroluminescent element and an electronic device including the electroluminescent element include a glass template having a silica layer as a matrix, electrodes and a luminescent material. Since the electroluminescent element according to the present invention includes silica as a matrix, the electroluminescent element has a stabilized structure even though a space between the luminescent layer and the electrode of the glass template is not filled. Further, such an electroluminescent element may be easily prepared, and thus may be effectively applied to various electronic devices, such as display devices, illumination devices and backlight units.
    Type: Grant
    Filed: May 30, 2006
    Date of Patent: September 21, 2010
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Byoung Lyong Choi, Kyung Sang Cho, Soon Jae Kwon, Eun Kyung Lee, Jae Ho Lee
  • Publication number: 20100201004
    Abstract: A carbon/epoxy resin composition and a method of producing a carbon-epoxy dielectric using the same. The carbon/epoxy resin composition includes about 45 volume percent (volume %) to about 50 volume % of an epoxy composition, the epoxy composition including a bisphenol-based epoxy compound and an alicyclic epoxy compound, based on a total volume of the carbon/epoxy resin composition, about 2.0 volume % to about 3.1 volume % of carbon black, based on a total volume of the carbon/epoxy resin composition, about 80 parts by volume to about 104 parts by volume of an acid anhydride-based curing agent, based on 100 parts by volume of the epoxy composition, and about 1 part by volume to about 3 parts by volume of a tertiary alkylamine-based curing catalyst, based on 100 parts by volume of the epoxy composition.
    Type: Application
    Filed: July 27, 2009
    Publication date: August 12, 2010
    Applicant: SAMSUNG ELECTRONICS CO., LTD
    Inventors: Yoo-Seong YANG, Eun-Sung LEE, Sang-Soo JEE, Soon-Jae KWON
  • Publication number: 20100155665
    Abstract: A nano phosphor prepared by mixing a metal oxide nanoparticle and inorganic salt, a method of preparing the nano phosphor, and a display device including the nano phosphor. The method includes dissolving the inorganic salt in a solvent, adding the metal oxide nanoparticles to the solution, and annealing the resultant mixture, preferably under pressure. Such a process removes defects in the crystal structure of the nano phosphor, resulting in improved luminescent efficiency when incorporated into a display device.
    Type: Application
    Filed: December 17, 2009
    Publication date: June 24, 2010
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Hyun-sik Kim, Soon-jae Kwon, Soo-yeon Seo, Gyeong-su Park
  • Publication number: 20100127214
    Abstract: A method of preparing oxide-based nanophosphor includes preparing a reaction mixture by dissolving reaction mixture components including a metal halide, an oleate, and a precipitation auxiliary compound in a solvent; irradiating the reaction mixture with microwave radiation to precipitate an oxide-based nanophosphor precursor; and sintering the oxide-based nanophosphor precursor.
    Type: Application
    Filed: September 28, 2009
    Publication date: May 27, 2010
    Applicant: Samsung SDI Co., Ltd.
    Inventors: Soo-yeon SEO, Soon-jae KWON, Hyun-sik KIM
  • Publication number: 20100051583
    Abstract: Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures in a particular direction, and removing the nanostructures by etching. According to the method, the size, shape, orientation and regularity of pores of the porous material can be easily controlled, and the preparation of the porous material is simplified, leading to a reduction in preparation costs. Further disclosed is a porous material prepared by the method.
    Type: Application
    Filed: May 31, 2006
    Publication date: March 4, 2010
    Inventors: Kyung Sang Cho, Byoung Lyong Choi, Eun Kyung Lee, Soon Jae Kwon, Jae Ho Lee