Abstract: Disclosed herein is a method for preparing a porous material using nanostructures. The method comprises the steps of producing nanostructures using a porous template, dispersing the nanostructures in a source or precursor material for the porous material, aligning the nanostructures in a particular direction, and removing the nanostructures by etching. According to the method, the size, shape, orientation and regularity of pores of the porous material can be easily controlled, and the preparation of the porous material is simplified, leading to a reduction in preparation costs. Further disclosed is a porous material prepared by the method.

Abstract: A method for preparing a metal oxide phosphor contemplates preparing a solution including a metal precursor compound and an ionic material and heating the solution under pressure using microwaves.

Abstract: A method of manufacturing silicon nanowires is characterized in that silicon nanowires are formed and grown through a solid-liquid-solid process or a vapor-liquid-solid process using a porous glass template having nanopores doped with erbium or an erbium precursor. In addition, a device including silicon nanowires formed using the above exemplary method according to the present invention can be effectively applied to various devices, for example, electronic devices such as field effect transistors, sensors, photodetectors, light emitting diodes, laser diodes, etc.

Abstract: A nanowire composite and a method of preparing the nanowire composite comprise a template having a plurality of hollow channels, nanowires formed within the respective channels of the template, and a functional element formed by removing a portion of the template so that one or more of the nanowires formed within the portion of the template are exposed. Since the nanowire composite can be prepared in a simple manner at low costs and can be miniaturized, the nanowire composite finds application in resonators and a variety of sensors.

Abstract: Provided is a method of producing spherical nanophosphor particles having a uniform size distribution. When nanophosphor obtained using the method is used in a flat panel display, the flat panel display has higher screen brightness and a higher resolution.

Abstract: Provided are a rare earth nano phosphor and a method of preparing a rare earth nano phosphor, the method includes: (a) synthesis of rare earth nano phosphor precursor particles by radiating microwave energy to a solvent where rare earth metal compounds are dissolved; and (b) sintering of inorganic salt and the rare earth nano phosphor precursor mixture.

Abstract: Disclosed herein is a method for producing nanowires, which features the use of a porous glass template in combination with a solid-liquid-solid or vapor-liquid-solid process for growing nanowires which are highly straight and have nanoparticles precisely arranged therein. The nanowires can be grown into composite structures of superlattices and hybrids by modulating the composition of the materials provided thereto. Also disclosed is the use of the nanowires in multi-probes, field emission tips, and devices.

Abstract: Disclosed herein a quantum dot light-emitting device which has an inorganic electron transport layer. According to the device, an electron transport layer formed by an inorganic materials, thereby providing a high electron transport velocity or electron density and improving a light emitting efficiency. Further, interlayer resistance between electrode and organic-electron transporting layer or between quantum dot light-emitting layer and organic-electron transporting layer is prohibit, thus increasing a light emitting efficiency of diode.

Abstract: A metallic compound hybridized nanophosphor layer, in which the metallic compound is metallic oxide or metallic sulfide. The metallic compound hybridized nanophosphor layer is prepared in consideration of physical, mechanical, and chemical stabilities. The metallic compound hybridized nanophosphor layer has an excellent light scattering effect and high durability against damage from ion-bombardment. In addition, the charging effect caused by V-UV vacuum-ultraviolet ray can be considerably reduced. Thus, the metallic compound hybridized nanophosphor layer is very suitable for various display devices having high efficiency and high resolution. Accordingly, a display device using the metallic compound hybridized nanophosphor layer shows high performance and long lifetime. The method of forming the metallic compound hybridized nanophosphor layer is a low temperature layer forming process through which a thin film-type layer can be formed at low temperature.

Abstract: A nanodot electroluminescent diode is disclosed. The nanodot electroluminescent diode comprises a lower electrode, an upper electrode, and unit cells interposed between the electrodes, wherein the unit cells comprise a quantum dot electroluminescent layer and also include an organic layer and/or an inorganic layer in addition to the quantum dot electroluminescent layer. The disclosed nanodot electroluminescent diode provides high efficiency, stability, and high luminance, and mixed colors, multi-colors, full color, and white electroluminescence can be obtained.

Abstract: A quantum dot electroluminescence device and a method of fabricating the same are provided. The quantum dot electroluminescence device comprises an insulating substrate; a quantum dot luminescence layer supported by the insulating substrate, and composed of a monolayer or multilayer of quantum dots, which are cross-linked by a cross-link agent; an anode electrode and a cathode electrode connected to an external power supply to inject carriers to the quantum dot luminescence layer; a hole transfer layer interposed between the anode electrode and the quantum dot luminescence layer, and composed of p-type polymer semiconductor; and an electron transfer layer interposed between the cathode electrode and the quantum dot luminescence layer, and composed of metal oxide or n-type polymer semiconductor.

Abstract: Disclosed are an inorganic electroluminescent diode and a method of fabricating the same. Specifically, this invention provides an inorganic electroluminescent diode, which includes a semiconductor nanocrystal layer formed of inorganic material, an electron transport layer or a hole transport layer formed on the semiconductor nanocrystal layer using amorphous inorganic material, and a hole transport layer or an electron transport layer formed beneath the semiconductor nanocrystal layer using inorganic material, and also provides a method of fabricating such an inorganic electroluminescent diode. According to the method of fabricating the inorganic electroluminescent diode of this invention, an inorganic electroluminescent diode can be fabricated while maintaining the properties of luminescent semiconductor material of the semiconductor crystal layer, and also an inorganic electroluminescent diode which is stably operated and has high luminescent efficiency can be provided.

Abstract: The present invention relates to a superconducting colloid prepared by an exfoliating multi-layered superconductor, represented by the formula Bi2Sr2Cam−1CumO2m+4+&dgr; (wherein, m is 1, 2 or 3 and &dgr; is a positive number greater than 0 and less than 1) in which a mercuric halide-organic complex is intercalated, a process thereof, a superconducting thin layer prepared using the above superconducting colloid, and a process thereof.