Abstract: A technique for designing circuits including receiving a data object representing a circuit for a first process technology, the circuit including a first sub-circuit, the first sub-circuit including a first electrical component and a second electrical component arranged in a first topology; identifying the first sub-circuit in the data object by comparing the first topology to a stored topology, the stored topology associated with the first process technology; identifying a first set of physical parameter values associated with first electrical component and the second electrical component of the first sub-circuit; determining a set of performance parameter values for the first sub-circuit based on a first machine learning model of the first sub-circuit and the identified set of physical parameters; converting the identified first sub-circuit to a second sub-circuit for the second process technology based on the determined set of performance parameter values; and outputting the second sub-circuit.

Abstract: A technique for designing circuits including receiving a data object representing a circuit for a first process technology, the circuit including a first sub-circuit, the first sub-circuit including a first electrical component and a second electrical component arranged in a first topology; identifying the first sub-circuit in the data object by comparing the first topology to a stored topology, the stored topology associated with the first process technology; identifying a first set of physical parameter values associated with first electrical component and the second electrical component of the first sub-circuit; determining a set of performance parameter values for the first sub-circuit based on a first machine learning model of the first sub-circuit and the identified set of physical parameters; converting the identified first sub-circuit to a second sub-circuit for the second process technology based on the determined set of performance parameter values; and outputting the second sub-circuit.

Abstract: A technique for designing circuits including receiving a data object representing a circuit for a first process technology, the circuit including a first sub-circuit, the first sub-circuit including a first electrical component and a second electrical component arranged in a first topology; identifying the first sub-circuit in the data object by comparing the first topology to a stored topology, the stored topology associated with the first process technology; identifying a first set of physical parameter values associated with first electrical component and the second electrical component of the first sub-circuit; determining a set of performance parameter values for the first sub-circuit based on a first machine learning model of the first sub-circuit and the identified set of physical parameters; converting the identified first sub-circuit to a second sub-circuit for the second process technology based on the determined set of performance parameter values; and outputting the second sub-circuit.

Abstract: A technique for designing circuits including receiving a data object representing a circuit for a first process technology, the circuit including a first sub-circuit, the first sub-circuit including a first electrical component and a second electrical component arranged in a first topology; identifying the first sub-circuit in the data object by comparing the first topology to a stored topology, the stored topology associated with the first process technology; identifying a first set of physical parameter values associated with first electrical component and the second electrical component of the first sub-circuit; determining a set of performance parameter values for the first sub-circuit based on a first machine learning model of the first sub-circuit and the identified set of physical parameters; converting the identified first sub-circuit to a second sub-circuit for the second process technology based on the determined set of performance parameter values; and outputting the second sub-circuit.

Abstract: A technique for designing circuits including receiving a data object representing a circuit for a first process technology, the circuit including a first sub-circuit, the first sub-circuit including a first electrical component and a second electrical component arranged in a first topology; identifying the first sub-circuit in the data object by comparing the first topology to a stored topology, the stored topology associated with the first process technology; identifying a first set of physical parameter values associated with first electrical component and the second electrical component of the first sub-circuit; determining a set of performance parameter values for the first sub-circuit based on a first machine learning model of the first sub-circuit and the identified set of physical parameters; converting the identified first sub-circuit to a second sub-circuit for the second process technology based on the determined set of performance parameter values; and outputting the second sub-circuit.

Abstract: A die-wrapped packaged device includes at least one flexible substrate having a top side and a bottom side that has lead terminals, where the top side has outer positioned die bonding features coupled by traces to through-vias that couple through a thickness of the flexible substrate to the lead terminals. At least one die includes a substrate having a back side and a topside semiconductor surface including circuitry thereon having nodes coupled to bond pads. One of the sides of the die is mounted on the top side of the flexible circuit, and the flexible substrate has a sufficient length relative to the die so that the flexible substrate wraps to extend over at least two sidewalls of the die onto the top side of the flexible substrate so that the die bonding features contact the bond pads.

Abstract: A microelectronic device has a die with a first electrically conductive pillar, and a second electrically conductive pillar, mechanically coupled to the die. The microelectronic device includes a first electrically conductive extended head electrically coupled to the first pillar, and a second electrically conductive extended head electrically coupled to the second pillar. The first pillar and the second pillar have equal compositions of electrically conductive material, as a result of being formed concurrently. Similarly, the first extended head and the second extended head have equal compositions of electrically conductive material, as a result of being formed concurrently. The first extended head provides a bump pad, and the second extended head provides at least a portion of a first plate of an integrated capacitor. A second plate may be located in the die, between the first plate and the die, or on an opposite of the first plate from the die.

Abstract: In some examples, a system comprises a die having multiple electrical connectors extending from a surface of the die and a lead coupled to the multiple electrical connectors. The lead comprises a first conductive member; a first non-solder metal plating stacked on the first conductive member; an electroplated layer stacked on the first non-solder metal plating; a second non-solder metal plating stacked on the electroplated layer; and a second conductive member stacked on the second non-solder metal plating, the second conductive member being thinner than the first conductive member. The system also comprises a molding to at least partially encapsulate the die and the lead.

Abstract: A microelectronic device has a die with a die conductor at a connection surface. The microelectronic device includes a pillar electrically coupled to the die conductor, and a head electrically coupled to the pillar. The pillar has a die-side flared end at a die end of the pillar; the pillar widens progressively along the die-side flared end, and extends outward by more than a lesser of half a thickness of the die conductor and half a lateral width of the pillar midway between a die end and a head end. The pillar has a head-side flared end at a head end of the pillar; the pillar widens progressively along the die-side flared end, and extends outward by a distance that is greater than a lesser of half a thickness of the head and half the lateral width of the pillar. Methods of forming the microelectronic device are disclosed.

Abstract: In some examples, a device comprises an electronic component having multiple electrical connectors, the multiple electrical connectors configured to couple to a printed circuit board (PCB) and having a first footprint. The device also comprises a multi-lead adapter comprising multiple rows of leads arranged in parallel, the leads in the rows configured to couple to the electrical connectors of the electronic component and having a second footprint that has a different size than the first footprint.

Abstract: A microelectronic device includes a die less than 300 microns thick, and an interface tile. Die attach leads on the interface tile are electrically coupled to die terminals on the die through interface bonds. The microelectronic device includes an interposer between the die and the interface tile. Lateral perimeters of the die, the interposer, and the interface tile are aligned with each other. The microelectronic device may be formed by forming the interface bonds and an interposer layer, while the die is part of a wafer and the interface tile is part of an interface lamina. Kerfs are formed through the interface lamina, through the interposer, and partway through the wafer, around a lateral perimeter of the die. Material is subsequently removed at a back surface of the die to the kerfs, so that a thickness of the die is less than 300 microns.

Abstract: In one instance, a method of forming a semiconductor package with a leadframe includes cutting, such as with a laser, a first side of a metal strip to a depth D1 according to a cutting pattern to form a first plurality of openings, which may be curvilinear. The method further includes etching the second side of the metal strip to a depth D2 according to a photoresist pattern to form a second plurality of openings. At least some of the first plurality of openings are in fluid communication with at least some of the second plurality of openings to form a plurality of leadframe leads. The depth D1 is shallower than a height H of the metal strip, and the depth D2 is also shallower than the height H. Other embodiments are presented.

Abstract: A microelectronic device has a die with a die conductor at a connection surface. The microelectronic device includes a pillar electrically coupled to the die conductor, and a head electrically coupled to the pillar. The pillar has a die-side flared end at a die end of the pillar; the pillar widens progressively along the die-side flared end, and extends outward by more than a lesser of half a thickness of the die conductor and half a lateral width of the pillar midway between a die end and a head end. The pillar has a head-side flared end at a head end of the pillar; the pillar widens progressively along the die-side flared end, and extends outward by a distance that is greater than a lesser of half a thickness of the head and half the lateral width of the pillar. Methods of forming the microelectronic device are disclosed.

Abstract: A microelectronic device has a die with a first electrically conductive pillar, and a second electrically conductive pillar, mechanically coupled to the die. The microelectronic device includes a first electrically conductive extended head electrically coupled to the first pillar, and a second electrically conductive extended head electrically coupled to the second pillar. The first pillar and the second pillar have equal compositions of electrically conductive material, as a result of being formed concurrently. Similarly, the first extended head and the second extended head have equal compositions of electrically conductive material, as a result of being formed concurrently. The first extended head provides a bump pad, and the second extended head provides at least a portion of a first plate of an integrated capacitor. A second plate may be located in the die, between the first plate and the die, or on an opposite of the first plate from the die.

Abstract: In some examples, a system comprises a die having multiple electrical connectors extending from a surface of the die and a lead coupled to the multiple electrical connectors. The lead comprises a first conductive member; a first non-solder metal plating stacked on the first conductive member; an electroplated layer stacked on the first non-solder metal plating; a second non-solder metal plating stacked on the electroplated layer; and a second conductive member stacked on the second non-solder metal plating, the second conductive member being thinner than the first conductive member. The system also comprises a molding to at least partially encapsulate the die and the lead.

Abstract: A coupling device provides galvanic isolation using a leadframe that is configured to support two integrated circuit chips in a coplanar manner. Each chip contains an inductive coupling coil. The lead frame includes a set of bond pads for attaching bond wires to couple to the two integrated circuit chips. Two separated die attach pads support the two chips. Each die attach pad is configured to support one of the two integrated circuit chips with a plurality of cantilevered fingers.

Abstract: A microelectronic device includes a die less than 300 microns thick, and an interface tile. Die attach leads on the interface tile are electrically coupled to die terminals on the die through interface bonds. The microelectronic device includes an interposer between the die and the interface tile. Lateral perimeters of the die, the interposer, and the interface tile are aligned with each other. The microelectronic device may be formed by forming the interface bonds and an interposer layer, while the die is part of a wafer and the interface tile is part of an interface lamina. Kerfs are formed through the interface lamina, through the interposer, and partway through the wafer, around a lateral perimeter of the die. Material is subsequently removed at a back surface of the die to the kerfs, so that a thickness of the die is less than 300 microns.

Abstract: In one instance, a semiconductor package includes a metal leadframe having a first plurality of openings extending partially into the leadframe from the first side and a second plurality of openings extending partially into the leadframe from the second side together forming a plurality of leads. A pre-mold compound is positioned in the second plurality of openings that at least partially supports the plurality of leads. The semiconductor package has a plurality of bumps extending from the landing sites to a semiconductor die and a molding compounding at least partially covering the plurality of bumps and the metal leadframe. Other packages and methods are disclosed.

Abstract: In a described example, an apparatus includes a packaged device carrier having a board side surface and an opposing surface, the packaged device carrier having conductive leads having a first thickness spaced from one another; the conductive leads having a head portion attached to a dielectric portion, a middle portion extending from the head portion and extending away from the board side surface of the packaged device carrier at an angle to the opposing surface, and each lead having an end extending from the middle portion with a foot portion configured for mounting to a substrate.

Abstract: A coupling device provides galvanic isolation using a leadframe that is configured to support two integrated circuit chips in a coplanar manner. Each chip contains an inductive coupling coil. The lead frame includes a set of bond pads for attaching bond wires to couple to the two integrated circuit chips. Two separated die attach pads support the two chips. Each die attach pad is configured to support one of the two integrated circuit chips with a plurality of cantilevered fingers.