Abstract: Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.

Abstract: Demodulating a modulated signal. A method may include receiving a modulated signal, wherein the modulated signal is a signal modulated according to a modulation function varying faster than the signal. The modulation function is a function of the signal. The modulated signal received is demodulated with an artificial neural network system, or ANN system, which is trained to identify bit values from signal patterns as caused by the modulation function, by identifying bit values from patterns of the modulated signal received. Related modulation and demodulation systems are disclosed.

Abstract: A tunable resistive element includes a first terminal, a second terminal and a resistive layer having a tunable resistive material. The resistive layer is arranged between the first terminal and the second terminal. The resistive element further includes a piezoelectric layer having a piezoelectric material. The piezoelectric layer is adapted to apply stress to the resistive layer. An electrical resistance of the tunable resistive material is dependent upon a first electrical control signal applied to the first terminal and the second terminal as well as upon the stress applied by the piezoelectric layer to the resistive layer. The stress applied by the piezoelectric layer is dependent on a second electrical control signal applied to the piezoelectric layer.

Abstract: A tunable resistive element includes a first terminal, a second terminal and a resistive layer having a tunable resistive material. The resistive layer is arranged between the first terminal and the second terminal. The resistive element further includes a piezoelectric layer having a piezoelectric material. The piezoelectric layer is adapted to apply stress to the resistive layer. An electrical resistance of the tunable resistive material is dependent upon a first electrical control signal applied to the first terminal and the second terminal as well as upon the stress applied by the piezoelectric layer to the resistive layer. The stress applied by the piezoelectric layer is dependent on a second electrical control signal applied to the piezoelectric layer.

Abstract: An electrical resistor element, system, and method related thereto, wherein the electrical resistor element includes a tunable resistance. The electrical resistor element comprises a first contact electrode, a second contact electrode and a ferroelectric layer arranged between the first contact electrode and the second contact electrode. The ferroelectric layer comprises a first area having a first polarization direction and a second area having a second polarization direction. The first polarization direction is different to the second polarization direction. The ferroelectric layer further comprises a domain wall between the first area and the second area. The electrical resistor element further comprises a first pinning element configured to stabilize the first polarization direction of the ferroelectric layer.

Abstract: Demodulating a modulated signal. A method may include receiving a modulated signal, wherein the modulated signal is a signal modulated according to a modulation function varying faster than the signal. The modulation function is a function of the signal. The modulated signal received is demodulated with an artificial neural network system, or ANN system, which is trained to identify bit values from signal patterns as caused by the modulation function, by identifying bit values from patterns of the modulated signal received. Related modulation and demodulation systems are disclosed.

Abstract: A neuromorphic network includes a first node configured to transmit a first optical signal and a second node configured to transmit a second optical signal. A waveguide optically connects the first node to the second node. An integrated optical synapse is located on the waveguide between the first node and the second node, the optical synapse configured to change an optical property based on the first optical signal and the second optical signal such that if a correlation between the first optical signal and the second optical signal is strong, the optical connection between the first node and the second node is increased and if the correlation between the first optical signal and the second optical signal is weak, the optical connection between the first node and the second node is decreased.

Abstract: Aspects of the invention are directed to an electro-optical device having a layer structure including a substrate, an electrically insulating layer on top of the substrate, a bonding layer on top of the electrically insulating layer, a Pockels layer on top of the bonding layer, a waveguide core on top of the Pockels layer, and a cladding layer cladding both the waveguide core and the Pockels layer, the latter coated by the cladding layer. The Pockels layer is a layer of a crystalline first material having a Pockels coefficient between 10 pm/V and 10 000 pm/V. The waveguide core includes a second material, which can be crystalline. The device can be adapted to optically couple radiation into and/or from the waveguide core. Each of the first material and the second material has a larger refractive index than the electrically insulating layer and the cladding layer for said radiation.

Abstract: A tunable resistive element, comprising a first terminal, a second terminal, a dielectric layer and an intercalation layer. The dielectric layer and the intercalation layer is arranged between the first terminal and the second terminal. The dielectric layer is configured to form conductive filaments of oxygen vacancies on application of an electric field. The intercalation layer is configured to undergo a topotactic transition comprising an oxygen intercalation in combination with a change in the resistivity of the intercalation layer. A related memory device and a related neuromorphic network comprise resistive memory elements as memory cells and synapses respectively and a corresponding design structure.

Abstract: A method for converting a dielectric material including a type IV transition metal into a crystalline material that includes forming a predominantly non-crystalline dielectric material including the type IV transition metal on a supporting substrate as a component of an electrical device having a scale of microscale or less; and converting the predominantly non-crystalline dielectric material including the type IV transition metal to a crystalline crystal structure by exposure to energy for durations of less than 100 milliseconds and, in some instances, less than 10 microseconds. The resultant material is fully or partially crystallized and contains a metastable ferroelectric phase such as the polar orthorhombic phase of space group Pca21 or Pmn21. During the conversion to the crystalline crystal structure, adjacently positioned components of the electrical devices are not damaged.

Abstract: A tunable resistive element, comprising a first terminal, a second terminal, a dielectric layer and an intercalation layer. The dielectric layer and the intercalation layer are arranged in series between the first terminal and the second terminal. The dielectric layer is configured to form conductive filaments of oxygen vacancies on application of an electric field. The intercalation layer is configured to undergo a topotactic transition comprising an oxygen intercalation in combination with a change in the resistivity of the intercalation layer. A related memory device and a related neuromorphic network comprise resistive memory elements as memory cells and synapses respectively and a corresponding design structure.

Abstract: An integrated optical circuit for an optical neural network is provided. The integrated optical circuit is configured to process a phase-encoded optical input signal and to provide a phase-encoded output signal depending on the phase-encoded optical input signal. The phase-encoded output signal emulates a synapse functionality with respect to the phase-encoded optical input signal. A related method and a related design structure are further provided.

Abstract: An integrated optical circuit for an optical neural network is provided. The optical circuit is configured to process a plurality of phase-encoded optical input signals and to provide a phase-encoded optical output signal depending on the phase-encoded optical input signals. The phase-encoded optical output signal emulates a neuron functionality with respect to the plurality of phase-encoded optical input signals. Such an embodied optical circuit uses the phase to encode information in the optical domain. A related method and a related design structure are further provided.

Abstract: The present invention is notably directed to an electro-optical device. This device has a layer structure, which comprises a stack of III-V semiconductor gain materials, an n-doped layer and a p-doped layer. The III-V materials are stacked along a stacking direction z, which is perpendicular to a main plane of the stack. The n-doped layer extends essentially parallel to the main plane of the stack, on one side thereof. The p-doped layer too extends essentially parallel to this main plane, but on another side thereof. A median vertical plane can be defined in the layer structure, which plane is parallel to the stacking direction z and perpendicular to the main plane of the stack. Now, the device further comprises two sets of ohmic contacts, wherein the ohmic contacts of each set are configured for vertical current injection in the stack of III-V semiconductor gain materials.

Abstract: A tunable resistive element, comprising a first terminal, a second terminal, a dielectric layer and an intercalation layer. The dielectric layer and the intercalation layer are arranged in series between the first terminal and the second terminal. The dielectric layer is configured to form conductive filaments of oxygen vacancies on application of an electric field. The intercalation layer is configured to undergo a topotactic transition comprising an oxygen intercalation in combination with a change in the resistivity of the intercalation layer. A related memory device and a related neuromorphic network comprise resistive memory elements as memory cells and synapses respectively and a corresponding design structure.

Abstract: An integrated optical transmission element may be provided. The integrated optical transmission element includes an optical cavity including an input port and an output port, and photorefractive material within the optical cavity. A transmission of light from the input port to the output port is persistently changeable by an optical control signal provided to the photorefractive material, the optical control signal being configured to change a refractive index.

Abstract: A reservoir computing neuromorphic network includes an input layer comprising one or more input nodes, a reservoir layer comprising a plurality of reservoir nodes, and an output layer comprising one or more output nodes. A portion of at least one of the input layer, the reservoir layer, and the output layer includes an optically tunable material.

Abstract: The invention relates to a method for hardware-implemented training of a feedforward artificial neural network. The method comprises: generating a first output signal by processing an input signal with the network, wherein a cost quantity to assumes a first cost value; measuring the first cost value; defining a group of at least one synaptic weight of the network for variation; varying each weight of the group by a predefined weight difference; after the variation, generating a second output signal from the input signal to measure a second cost value; comparing the first and second cost values; and determining, based on the comparison, a desired weight change for each weight of the group such that the cost function does not increase if the respective desired weight changes are added to the weights of the group. The desired weight change is based on the weight difference times ?1, 0, or +1.

Abstract: Embodiments of the disclosure are directed to the fabrication of an electro-optical device. The device comprises the forming of an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises selectively re-growing two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices.

Abstract: Embodiments of the disclosure are directed to a lateral current injection electro-optical device. The device comprises an active region with a stack of III-V semiconductor gain materials stacked along a stacking direction z. The active region may be formed as a slab having several lateral surface portions, each extending parallel to the stacking direction z. The device further comprises two paired elements, which include: a pair of doped layers of III-V semiconductor materials (an n-doped layer and a p-doped layer); and a pair of lateral waveguide cores. The two paired elements may be laterally arranged, two-by-two, on opposite sides of the slab. The elements distinctly adjoin respective ones of the lateral surface portions of the slab, so as for these elements to be separated from each other by the slab. The disclosure may be further directed to related silicon photonics devices and fabrication methods.