Abstract: A semiconductor structure is provided, the semiconductor structure comprising: a semiconductor substrate processed to comprise at least an optical aspect comprising at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device; at least an interlayer dielectric layer provided on the semiconductor substrate, and at least an electrically interconnecting layer provided on the interlayer dielectric layer, wherein: the semiconductor structure further comprises at least a functional-oxide crystalline layer provided in relation to the interlayer dielectric layer before the interconnecting layer is provided on the interlayer dielectric layer, the functional-oxide crystalline layer comprising at least a functional-oxide material and is processed to comprise at least an active optical device, and the interlayer dielectric layer comprises a first surface and a second surface, the first surface being in common to at least a respective part of the optical aspect and the ele

Abstract: A neuromorphic network includes a first node configured to transmit a first optical signal and a second node configured to transmit a second optical signal. A waveguide optically connects the first node to the second node. An integrated optical synapse is located on the waveguide between the first node and the second node, the optical synapse configured to change an optical property based on the first optical signal and the second optical signal such that if a correlation between the first optical signal and the second optical signal is strong, the optical connection between the first node and the second node is increased and if the correlation between the first optical signal and the second optical signal is weak, the optical connection between the first node and the second node is decreased.

Abstract: A reservoir computing neuromorphic network includes an input layer comprising one or more input nodes, a reservoir layer comprising a plurality of reservoir nodes, and an output layer comprising one or more output nodes. A portion of at least one of the input layer, the reservoir layer, and the output layer includes an optically tunable material.

Abstract: A method comprising: providing a core comprising a layer of electro-optic dielectric material, a first layer of semiconductor material provided below the electro-optic material and a second layer of the semiconductor material provided above the electro-optic material, and electrodes, configured for applying voltages.

Abstract: A method for fabricating semiconductor structure comprises the steps of providing a substrate including a first crystalline semiconductor material, patterning an opening in a dielectric layer above the substrate, the opening having a bottom, forming a crystalline interlayer on the substrate at least partially covering the bottom, and growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening. The crystalline semiconductor materials are lattice mismatched, and the crystalline interlayer comprises an oxygen compound.

Abstract: A waveguide structure comprising: a core comprising a layer of electro-optic dielectric material, a first layer of semiconductor material provided below the electro-optic material and a second layer of the semiconductor material provided above the electro-optic material, and electrodes, configured for applying voltages.

Abstract: A semiconductor structure is provided, the semiconductor structure comprising: a semiconductor substrate processed to comprise at least an optical aspect comprising at least a silicon photonics device and at least an electronic aspect comprising at least an electronic device; at least an interlayer dielectric layer provided on the semiconductor substrate, and at least an electrically interconnecting layer provided on the interlayer dielectric layer, wherein: the semiconductor structure further comprises at least a functional-oxide crystalline layer provided in relation to the interlayer dielectric layer before the interconnecting layer is provided on the interlayer dielectric layer, the functional-oxide crystalline layer comprising at least a functional-oxide material and is processed to comprise at least an active optical device, and the interlayer dielectric layer comprises a first surface and a second surface, the first surface being in common to at least a respective part of the optical aspect and the ele

Abstract: A semiconductor structure comprises a substrate comprising a first crystalline semiconductor material, a dielectric layer, above the substrate, defining an opening, a second crystalline semiconductor material at least partially filling the opening, and a crystalline interlayer between the substrate and the second crystalline semiconductor material. The first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched, and the crystalline interlayer comprises an oxygen compound. A method for fabricating semiconductor structure comprises the steps of providing a substrate including a first crystalline semiconductor material, patterning an opening in a dielectric layer above the substrate, the opening having a bottom, forming a crystalline interlayer on the substrate at least partially covering the bottom, and growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening.

Abstract: A waveguide structure comprising: a core comprising a layer of electro-optic dielectric material, a first layer of semiconductor material provided below the electro-optic material and a second layer of the semiconductor material provided above the electro-optic material, and electrodes, configured for applying voltages.

Abstract: A semiconductor structure comprises a substrate comprising a first crystalline semiconductor material, a dielectric layer, above the substrate, defining an opening, a second crystalline semiconductor material at least partially filling the opening, and a crystalline interlayer between the substrate and the second crystalline semiconductor material. The first crystalline semiconductor material and the second crystalline semiconductor material are lattice mismatched, and the crystalline interlayer comprises an oxygen compound. A method for fabricating semiconductor structure comprises the steps of providing a substrate including a first crystalline semiconductor material, patterning an opening in a dielectric layer above the substrate, the opening having a bottom, forming a crystalline interlayer on the substrate at least partially covering the bottom, and growing a second crystalline semiconductor material on the crystalline interlayer thereby at least partially filling the opening.