Abstract: A lighting device may include a semiconductor light source module, an optical unit, and a common support for the semiconductor light source module and the optical unit. The optical unit is mounted on a front side of the support and has at least one dowel, which extends into a precisely fitting hole in the semiconductor light source module. The semiconductor light source module rests on a rear side of the support. The at least one dowel projects through an aperture in the support and extends into the precisely fitting hole in the semiconductor light source module. The at least one dowel forms a shoulder, which rests on a supporting surface of the semiconductor light source module that rests on the rear side of the support.

Abstract: In various embodiments, a lighting module for a vehicle lighting device is provided. The lighting module may include a light generating unit having at least one semiconductor light source arranged on a common substrate; wherein at least one module diaphragm introduced into a beam path of the light generating unit is arranged on the lighting module.

Abstract: A lighting device may include a carrier, on which at least one semiconductor light source is arranged; and may have at least one main reflector, which arches over the at least one semiconductor light source; wherein at least one local reflector, which is likewise arched over by the main reflector, is arranged on the carrier.

Abstract: A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.

Abstract: A method of manufacturing a semipolar semiconductor crystal comprising a group-III-nitride (III-N), the method comprising: providing a substrate comprising sapphire (Al2O3) having a first surface that intersects c-planes of the sapphire; forming a plurality of trenches in the first surface, each trench having a wall whose surface is substantially parallel to a c-plane of the substrate; epitaxially growing a group-III-nitride (III-N) material in the trenches on the c-plane surfaces of their walls until the material overgrows the trenches to form a second planar surface, substantially parallel to a (20-2l) crystallographic plane of the group-III-nitride, wherein l is an integer.