Abstract: A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.

Abstract: A phase change memory may be made with improved speed and stable characteristics over extended cycling. The alloy may be selected by looking at alloys that become stuck in either the set or the reset state and finding a median or intermediate composition that achieves better cycling performance. Such alloys may also experience faster programming and may have set and reset programming speeds that are substantially similar.

Abstract: A phase change layer may switch between more and less conductive states in response to electrical stimulation. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and an insulating barrier. The phase change layer may be positioned over a non-switching ovonic material which acts as an electrode, a resistive heater, and a thermal barrier.

Abstract: A phase change memory may be utilized in place of a dynamic random access memory in a processor-based system. In some embodiments, a chalcogenide material, used for the phase change memory, has relatively high crystallization speed so that it may be quickly programmed. Materials may be chosen which have high crystallization speed and corresponding poor data retention. The poor data retention may be compensated by providing a refresh cycle.

Abstract: A programmable resistance memory element having a conductive layer as an electrode. The conductive layer and memory material may have a small area of contact. In one embodiment, the conductive layer may be cup-shaped. In one embodiment, the memory element may include a chalcogenide material.

Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.

Abstract: An electrically operated programmable resistance memory element having a conductive layer as an electrical contact. The conductive layer has a raised portion extending from an edge of the layer to an end adjacent the memory material.

Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.

Abstract: In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

Abstract: In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form a raised portion of a conductive layer. A programmable resistance material is formed in electrical contact with the raised portion.

Abstract: In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

Abstract: A method of making an electrically operated memory element. The memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.

Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form raised portions on an edge of a conductive sidewall layer. The modified conductive sidewall layer is used as an electrode for the memory element.

Abstract: A method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layer having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, the spacer layer conforming to the shape of the first sacrificial layer such that the spacer layer comprises an edge portion over the contact area adjacent the first sacrificial layer edge, removing the sacrificial layer, while retaining the edge portion of the spacer layer over the contact area, forming a dielectric layer over the contact area, removing the edge portion, and forming a programmable material to the contact area formerly occupied by the edge portion.

Abstract: A method of making an electrically operated memory element. The memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.

Abstract: A method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layer having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, the spacer layer conforming to the shape of the first sacrificial layer such that the spacer layer comprises an edge portion over the contact area adjacent the first sacrificial layer edge, removing the sacrificial layer, while retaining the edge portion of the spacer layer over the contact area, forming a dielectric layer over the contact area, removing the edge portion, and forming a programmable material to the contact area formerly occupied by the edge portion.

Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.

Abstract: An electrically operated memory element having a contact in electrical communication with a memory material programmable to at least a first resistance state and a second resistance state. Preferably, the contact includes at least a first region having a first resistivity and a second region having a second resistivity greater than the first resistivity where the more resistive region is adjacent to the memory material.

Abstract: In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.