Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.

Abstract: An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor. The electrode comprises a first portion having a first thermal coefficient of resistivity and a second portion having a different second thermal coefficient of resistivity. A method including modifying the thermal coefficient of resisting of a portion of an electrode.

Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.

Abstract: In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

Abstract: A phase-change memory may be formed with at least two phase-change material layers separated by a barrier layer. The use of more than one phase-change layer enables a reduction in the programming volume while still providing adequate thermal insulation.

Abstract: In an aspect, an apparatus is provided that sets and reprograms the state of programmable devices. In an aspect, a method is provided such that an opening is formed through a dielectric exposing a contact formed on a substrate. The resistivity of the contact is modified by at least one of implanting ions into the contact, depositing a material on the contact, and treating the contact with plasma. In an aspect, a spacer is formed within the opening and programmable material is formed within the opening and on the modified contact. A conductor is formed on the programmable material and the contact transmits to a signal line.

Abstract: A method comprising forming a sacrificial layer over less than the entire portion of a contact area on a substrate, the sacrificial layer having a thickness defining an edge over the contact area, forming a spacer layer over the spacer, the spacer layer conforming to the shape of the first sacrificial layer such that the spacer layer comprises an edge portion over the contact area adjacent the first sacrificial layer edge, removing the sacrificial layer, while retaining the edge portion of the spacer layer over the contact area, forming a dielectric layer over the contact area, removing the edge portion, and forming a programmable material to the contact area formerly occupied by the edge portion.

Abstract: A method of making an electrically operated programmable resistance memory element. A sidewall spacer is used as a mask to form raised portions on an edge of a conductive sidewall layer. The modified conductive sidewall layer is used as an electrode for the memory element.

Abstract: An apparatus comprising a volume of memory material and a pair of spacedly disposed conductors. An electrode coupled to the volume of memory material and disposed between the volume of memory material and one conductor. The electrode comprises a first portion having a first thermal coefficient of resistivity and a second portion having a different second thermal coefficient of resistivity. A method including modifying the thermal coefficient of resisting of a portion of an electrode.

Abstract: An electrically operated programmable resistance memory element having a conductive layer as an electrical contact. The conductive layer has a raised portion extending from an edge of the layer to an end adjacent the memory material.

Abstract: A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory or control array based upon the novel switching characteristics provided by said unique class of semiconductor materials characterized by a large dynamic range of reversible Fermi level positions. The memory or control elements from which the array is fabricated exhibit orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory elements of the instant invention are in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic and/or electrode order, which configurations can be selectively and repeatably accessed by electric input signals of yawing energy level.

Abstract: Disclosed herein is a solid state, directly overwritable, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, single cell memory element having reduced switching current requirements and increased write/erase cycle life. The structurally modified memory element includes an electrical contact formed of amorphous silicon, either alone or in combination with a layer of amorphous carbon layer. The memory element exhibits orders of magnitude higher switching speeds at remarkably reduced switching energy levels. The novel memory elements of the instant invention are further characterized, inter alia, by at least two stable and non-volatile detectable configurations of local atomic and/or electronic order, which configurations can be selectively and repeatably accessed by electrical input signals of designated energies.

Abstract: A unique class of microcrystalline semiconductor materials which can be modulated, within a crystalline phase, to assume any one of a large dynamic range of different Fermi level positions while maintaining a substantially constant band gap over the entire range, even after a modulating field has been removed. A solid state, directly overwritable, electronic and optical, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon the novel switching characteristics provided by said unique class of semiconductor materials, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is in turn characterized, inter alia, by numerous stable and non-volatile detectable configurations of local atomic order, which configurations can be selectively and repeatably accessed by input signals of varying levels.

Abstract: A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.

Abstract: An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.

Abstract: A method of depositing high quality thin film at a high rate of deposition through the formation of a high flux of activated precursor species of a precursor deposition gas by employing a substantial pressure differential between the pressure adjacent the aperture in a conduit from which said precursor deposition gas is introduced into the interior of a vacuumized enclosure and the background pressure which exits in said enclosure. As the precursor deposition gas is introduced into said enclosure, a high density plume of said activated precursor species are formed therefrom due to an electromagnetic field established in an activation region adjacent said aperture. The pressure differential is sufficient to cause those activated precursor species to be deposited upon a remotely positioned substrate. In order to obtain a sufficient pressure differential, it is preferred that the flow of the precursor deposition gas reaches transonic velocity.

Abstract: A process for fabricating synthetic materials, such as "atomic ceramics", by atomic alloying of a host material. Energetic modifier elements or species are introduced into the host matrix of a fluidic precursor material so as to obtain an engineered material characterized by a range of optical electrical, thermal, chemical or mechanical properties not exhibited by either the modifier or the precursor material. In this manner modified, layered, graded, doped and/or alloyed materials may be synthesized. Special emphasis is placed on a novel technique for the synthesis of optical fibers.

Abstract: A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux to activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.

Abstract: A method of forming a high flux of activated species, such as ions, of an energy transferring gas by employing a substantial pressure differential between a first conduit in which the energy transferring gas is introduced into a vacuumized enclosure and the background pressure which exits in said enclosure. In one embodiment, the flow rate of the energy transferring gas flowing through said first conduit, when taken in conjunction with said pressure differential, causes the high flux of activated species of the energy transferring gas to collide with a precursor deposition/etchant gas, remotely introduced into the enclosure through a second conduit, for forming deposition/etchant species therefrom. In an alternate embodiment, the pressure differential causes those activated species, themselves, to be either deposited upon or etched away from the surface of a remotely positioned substrate.