Abstract: Methods for fabricating microelectronic interconnection structures as well as the structures formed by the methods are disclosed which improve the manufacturing throughput for assembling flip chip semiconductor devices. The use of a bilayer of polymeric materials applied on the wafer prior to dicing eliminates the need for dispensing and curing underfill for each semiconductor at the package level, thereby improving manufacturing throughput and reducing cost.

Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.

Abstract: A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.

Abstract: A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.

Abstract: Reworkable thermally conductive adhesive composition comprising a cured reaction product from a diepoxide wherein the epoxy groups are connected through an acyclic acetal moiety, a cyclic anhydride and a thermally conductive filler are provided and used to bond semiconductive devices to a chip carrier or heat spreader.

Abstract: A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.

Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.

Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.

Abstract: Methods for fabricating microelectronic interconnection structures as well as the structures formed by the methods are disclosed which improve the manufacturing throughput for assembling flip chip semiconductor devices. The use of a bilayer of polymeric materials applied on the wafer prior to dicing eliminates the need for dispensing and curing underfill for each semiconductor at the package level, thereby improving manufacturing throughput and reducing cost.

Abstract: New etch barriers of indium-tin-oxide in the manufacturing process of thin film transistor-liquid crystal display are self-assembled monolayers, such as n-alkylsilanes. A typical process of applying a self-assembled monolayer is to ink a hydrolyzed n-octadecyltrimethoxysilane solution on to a stamp and then to transfer the solution onto ITO. The surface of the stamp may be polar enough to be wet with polar self-assembled monolayer solutions of an akylsilane. A non-polar stamp surface may be treated with oxygen plasma to obtain a wettable polar surface.

Abstract: A method for fabricating a display device patterns a conductive layer on a display substrate and forms pixel electrodes on the display substrate. A plate is employed for carrying separately fabricated active devices to the display substrate. The separately fabricated devices are connected to the conductive layers and the pixel electrode.

Abstract: A system for aligning two plates, in accordance with the present invention, includes a first plate having a lithographically patterned structure formed on a first surface. A second plate also has a lithographically patterned structure formed on a second surface, the first and second surfaces being disposed to face each other. The patterned structures of the plates have corresponding and opposing edges to provide an interference fit between the patterned structures of the first and second plates wherein self-alignment between the first and second plates is realized by engaging the corresponding and opposing edges in the interference fit.

Abstract: A system for aligning two plates, in accordance with the present invention, includes a first plate having a lithographically patterned structure formed on a first surface. A second plate also has a lithographically patterned structure formed on a second surface, the first and second surfaces being disposed to face each other. The patterned structures of the plates have corresponding and opposing edges to provide an interference fit between the patterned structures of the first and second plates wherein self-alignment between the first and second plates is realized by engaging the corresponding and opposing edges in the interference fit.

Abstract: A composition for cleaning solder to remove flux, flux reaction products, residues, including residues from manufacturing operations such as plating and photoresist residues and other contaminants, without any significant dissolution of the solder especially solder used in fabricating electronic components such as C4 area array flip chip connectors, is provided. The composition comprises a non-aromatic sulfonic acid and a substituted alcohol with a preferred composition comprising 3 weight % methanesulfonic acid and 97 weight % trifluoroethanol. A method for cleaning solder and solder containing components made using the cleaning method and composition of the invention are also disclosed.

Abstract: An electrochemical color change cell incorporating as a color changing agent intramolecular charge transfer salt or an intermolecular charge transfer salt. The intermolecular charge transfer salts and the intramolecular charge transfer salts have a plurality of oxidation states and a wide variation in color change. The intermolecular and intramolecular charge transfer salts preferably contain a violene moiety and a moiety having a carbonyl group conjugated to an aromatic moiety. The intramolecular charge transfer salts have a stable covalent radical-anion/radical-cation configuration. The intermolecular charge transfer salts have a stable ionic radical-anion/radical-cation configuration.

Abstract: A cleavable epoxy resin composition suitable for encapsulating electronic chips comprising the cured reaction product of a diepoxide containing a cyclic anhydride curing agent and an amine promoter.

Abstract: A cleavable epoxy resin composition suitable for encapsulating electronic chips comprising the cured reaction product of a diepoxide containing a cyclic anhydride curing agent and an amine promoter.

Abstract: Certain organic polymeric materials are capable of reversibly accepting or donating electrons from a reducing entity. The redox sites in the polymer accept electrons and, as a result, a change in the properties of the polymer occurs. This change is useful in modifying or etching the polymeric material. The material can be modified by incorporation of metallic seeds into the material at a controlled depth. The seeds are incorporated by interaction of cations of the metals with the redox sites in the polymer, which cause the reduction of the cations to form the neutral metallic seeds. Subsequent exposure of the polymeric material containing the seeds to an electroless bath causes further deposition of metal having the desirable characteristic of good adhesion to the polymeric material. Etching of the polymeric material can be carried out as a result of an increase in solubility of the polymer in aprotic solvents when its redox sites have accepted electrons.

Abstract: Method for treating surface of dielectric polymer with water vapor plasma to form reactive sites and grafting a reactive polymer thereto to tailor the properties of the dielectric polymer surface.

Abstract: A process is disclosed for producing a metal-organic polymer combination by contacting the polymer with a plasma followed by an aqueous solution of a metal salt. In one embodiment a water or nitrous oxide plasma is used to treat a polyimide or a fluorinated polymer. The polymer is combined with a metal cation, the metal being a catalyst for a conventional electroless coating after which it is contacted with an electroless metal plating bath for the formation of electrical circuits and especially for plating high aspect ratio vias in microcircuits. Unlike the conventional electroless process, the cationic catalytic metal is not reduced to a zero valent metal catalyst prior to the application of the electroless metal coating solution.The process also improves the wettability of the polymer, especially the fluorinated polymer and is especially useful in improving the wettability of high aspect ratio vias.