Abstract: A process for the vapour phase chemical dehydration of ethanol in a reactor in the presence of a supported heteropolyacid catalyst, said process comprising a step of contacting the ethanol with the heteropolyacid catalyst, wherein the heteropolyacid catalyst comprises a partially neutralised silicotungstic acid salt, wherein the partially neutralised silicotungstic acid salt has from 30% to 70% of the hydrogen atoms replaced with cations selected from the group consisting of alkali metal cations, alkaline earth metal cations, transition metal cations, ammonium cations, and mixtures thereof; but with the proviso that the alkali metal cation is not lithium; and wherein, after attaining steady-state performance of the catalyst, said process is operated continuously with the same supported heteropolyacid catalyst for at least 150 hours, without any regeneration of the catalyst.

Abstract: A data center includes an electrical load, a connection to a utility power source, a uninterruptible power supply (UPS), a switching device and a control system. The control system is configured to cause the switching device to discontinue routing electrical power to the electrical loads via the UPS for a given period of time while electrical power is still available to be fed to the electrical loads from the utility power source. Subsequent to the given period of time, the control system cause the switching device to resume routing electrical power to the electrical loads via the UPS.

Abstract: The present invention relates to a process for producing ethene by the vapor phase dehydration of ethanol using a supported heteropolyacid catalyst. In particular, the present invention involves the use of a supported heteropolyacid catalyst, wherein the supported heteropolyacid catalyst is: i) a mixed oxide support comprising silica and a transition metal oxide, wherein silica is present in an amount of at least 50 wt. %, based on the weight of the mixed oxide support; or ii) a mixed oxide support comprising zirconia and a different transition metal oxide, wherein zirconia is present in an amount of at least 50 wt. %, based on the weight of the mixed oxide support. When used in a process for the preparation of ethene by vapor phase dehydration, and after attaining steady-state performance of the catalyst, the process may be operated continuously with the same supported heteropolyacid catalyst for at least 150 hours without any regeneration of the catalyst.

Abstract: The present invention provides a process for the preparation of ethene by vapor phase chemical dehydration of a feed comprising ethanol and optionally water and/or ethoxyethane, said process comprising contacting a dried supported heteropoly acid catalyst in a reactor with the feed-stream having feed temperature of at least 200° C.; wherein the pressure inside the reactor is at least 0.80 MPa but less than 1.80 MPa; and before the supported heteropolyacid catalyst is contacted with the feed-stream having a feed temperature of at least 200° C., the process is initiated by: (i) drying a supported heteropolyacid catalyst in a reactor under a stream of inert gas having a feed temperature of from above 100° C. to 200° C.; and (ii) contacting the dried supported heteropolyacid catalyst with an ethanol-containing vapor stream having a feed temperature of from above 100° C. to 160° C.

Abstract: An apparatus include a device substrate having an upper surface, and a frame layer having an upper surface. The frame layer is disposed over the upper surface of the device substrate, and a first opening exists in the frame layer. The apparatus also includes a seed layer disposed over the device substrate and substantially bounded by the first opening; and a lid layer having an upper surface. The lid layer is disposed over the upper surface of the frame layer. A second opening exists in the lid layer, and the second opening is aligned with the first opening. The apparatus also includes an electrically and thermally conductive pillar disposed in the first opening and the second opening.

Abstract: A method for making a semiconductor device may include forming active circuitry on a substrate including differential transistor pairs, and forming threshold voltage test circuitry on the substrate. The threshold voltage test circuitry may include a pair of differential test transistors replicating the differential transistor pairs within the active circuitry, with each test transistor having a respective input and output, and at least one gain stage configured to amplify a difference between the outputs of the differential test transistors for measuring a threshold voltage thereof. The differential transistor pairs and the pair of differential test transistors each includes spaced apart source and drain regions, a channel region extending between the source and drain regions, and a gate overlying the channel region. Moreover, each of the channel regions may include a superlattice.

Abstract: An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 ?-cm, and less than approximately 15000 ?-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 ?m to approximately 30.0 ?m, and is substantially without iron (Fe).

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: The present invention provides a process for the preparation of ethene by vapor phase chemical dehydration of a feed-stream comprising ethanol and optionally water and/or ethoxy ethane, said process comprising contacting a dried supported heteropolyacid catalyst in a reactor with the feed-stream having a feed temperature of at least 200° C.; wherein before the supported heteropolyacid catalyst is contacted with the feed-stream having a feed temperature of at least 200° C., the process is initiated by: (i) drying a supported heteropolyacid catalyst in a reactor under a stream of inert gas having a feed temperature of from above 100° C. to 200° C.; and (ii) contacting the dried supported heteropolyacid catalyst with an ethanol-containing vapor stream having a feed temperature of from above 100° C. to 160° C.

Abstract: An acoustic resonator filter comprises a plurality of resonator structures. One or more of the plurality of resonator structures comprises a substrate having a first surface and a second surface. The resonator structure also comprises a piezoelectric layer disposed over the substrate. The acoustic wave resonator structure also comprises a layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer. The layer has a first surface and a second surface. The layer and the piezoelectric layer have a combined thickness (H) selected so an anti-resonance (AR) condition exists for an undesired bulk vertical shear mode between the first surface of the piezoelectric layer and the second surface of the layer.

Abstract: A semiconductor device may include a substrate, active circuitry on the substrate and including differential transistor pairs, and threshold voltage test circuitry on the substrate. The threshold voltage test circuitry may include a pair of differential test transistors replicating the differential transistor pairs within the active circuitry, with each test transistor having a respective input and output, and at least one gain stage configured to amplify a difference between the outputs of the differential test transistors for measuring a threshold voltage thereof. The differential transistor pairs and the pair of differential test transistors may each include spaced apart source and drain regions, a channel region extending between the source and drain regions, and a gate overlying the channel region. Each of the channel regions may include a superlattice.

Abstract: A semiconductor device may include a plurality of memory cells, and at least one peripheral circuit coupled to the plurality of memory cells and comprising a superlattice. The superlattice may include a plurality of stacked groups of layers with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include a first power switching device configured to couple the at least one peripheral circuit to a first voltage supply during a first operating mode, and a second power switching device configured to couple the at least one peripheral circuit to a second voltage supply lower than the first voltage supply during a second operating mode.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: An improved running shoe in which the laces, rather than lacing over the tongue of the shoe, are laced and tied in the rear, over the heel structured and arranged to thereby provide a snug-fit upon a wearer's foot.

Abstract: An improved sanitary wipe apparatus, a sterile, naturally sanitizing wipe adapted to be stored within a dispenser box and removed one-by-one for use by a person to remove anti-microbial agents from a top drinking surface of a beverage can before drinking therefrom.

Abstract: An acoustic resonator filter comprises a plurality of resonator structures. One or more of the plurality of resonator structures comprises a substrate having a first surface and a second surface. The resonator structure also comprises a piezoelectric layer disposed over the substrate. The SAW resonator structure also comprises a layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer. The layer has a first surface and a second surface. The layer and the piezoelectric layer have a combined thickness (H) selected so an anti-resonance (AR) condition exists for an undesired bulk vertical shear mode between the first surface of the piezoelectric layer and the second surface of the layer.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A silicon layer disposed between a first surface of the layer and a second surface of the piezoelectric layer. A first surface of the silicon layer has a smoothness sufficient to foster atomic bonding between the first surface of the silicon layer and the second surface of the piezoelectric layer.

Abstract: The present invention provides a process for the preparation of ethene by vapor phase chemical dehydration of a feed comprising ethanol, said process comprising contacting the feed with a supported heteropolyacid catalyst in a reactor, wherein the feed temperature is at least 250° C. and the pressure inside the reactor is at least 0.80 MPa but less than 1.80 MPa.

Abstract: A semiconductor device may include a substrate, active circuitry on the substrate and including differential transistor pairs, and threshold voltage test circuitry on the substrate. The threshold voltage test circuitry may include a pair of differential test transistors replicating the differential transistor pairs within the active circuitry, with each test transistor having a respective input and output, and at least one gain stage configured to amplify a difference between the outputs of the differential test transistors for measuring a threshold voltage thereof. The differential transistor pairs and the pair of differential test transistors may each include spaced apart source and drain regions, a channel region extending between the source and drain regions, and a gate overlying the channel region. Each of the channel regions may include a superlattice.