Abstract: A method for making a semiconductor device may include forming active circuitry on a substrate including differential transistor pairs, and forming threshold voltage test circuitry on the substrate. The threshold voltage test circuitry may include a pair of differential test transistors replicating the differential transistor pairs within the active circuitry, with each test transistor having a respective input and output, and at least one gain stage configured to amplify a difference between the outputs of the differential test transistors for measuring a threshold voltage thereof. The differential transistor pairs and the pair of differential test transistors each includes spaced apart source and drain regions, a channel region extending between the source and drain regions, and a gate overlying the channel region. Moreover, each of the channel regions may include a superlattice.

Abstract: A weld (3) between a first material (1) and a second material (2), the first material (1) being a first metallic material, and the second material (2) being a second metallic material, the weld (3) has a width (4) between 0.5 mm and 7 mm, the weld (3) comprises at least one microweld (8), the microweld (8) forms a welding pattern (5) defined parallel to a surface (6) of the first material (1), and the microweld (8) has a characteristic feature size (7) of between 20 ?m and 400 um.

Abstract: Temperature compensation of an acoustic stack is disclosed. A first temperature compensation layer is disposed between a first surface of a substrate and a second surface of a piezoelectric layer; and a second temperature compensation layer is disposed over the plurality of electrodes. A temperature coefficient of frequency (TCF) of the acoustic stack is approximately zero (0.0) over a frequency range of Band 13.

Abstract: An acoustic resonator structure includes an acoustic stack. The acoustic stack comprises: a substrate having a first surface and a second surface; a piezoelectric layer disposed over the substrate, the piezoelectric layer having a first surface, and a second surface. The first surface of the substrate, or the second surface of the piezoelectric layer, comprises a plurality of features; and a plurality of electrodes disposed over the first surface of the piezoelectric layer. The plurality of electrodes is configured to generate acoustic waves in the piezoelectric layer. The acoustic stack also includes a temperature compensation layer disposed between the first surface of the substrate and the second surface of the piezoelectric layer.

Abstract: The present invention relates to a process for producing ethene by the vapour phase dehydration of ethanol using a supported heteropolyacid catalyst. In particular, the present invention involves the use of a supported heteropolyacid catalyst, wherein the supported heteropolyacid catalyst is: i) a mixed oxide support comprising silica and a transition metal oxide, wherein silica is present in an amount of at least 50 wt. %, based on the weight of the mixed oxide support; or ii) a mixed oxide support comprising zirconia and a different transition metal oxide, wherein zirconia is present in an amount of at least 50 wt. %, based on the weight of the mixed oxide support. When used in a process for the preparation of ethene by vapour phase dehydration, and after attaining steady-state performance of the catalyst, the process may be operated continuously with the same supported heteropolyacid catalyst for at least 150 hours without any regeneration of the catalyst.

Abstract: A process for the vapour phase chemical dehydration of ethanol in a reactor in the presence of a supported hetero-polyacid catalyst, said process comprising a step of contacting the ethanol with the heteropolyacid catalyst, wherein the heteropoly acid catalyst comprises a partially neutralised silicotungstic acid salt, wherein the partially neutralised silicotungstic acid salt has from 30% to 70% of the hydrogen atoms replaced with cations selected from the group consisting of alkali metal cations, alkaline earth metal cations, transition metal cations, ammonium cations, and mixtures thereof; but with the proviso that the alkali metal cation is not lithium; and wherein, after attaining steady-state performance of the catalyst, said process is operated continuously with the same supported heteropolyacid catalyst for at least 150 hours, without any regeneration of the catalyst.

Abstract: A lighting device, comprising a glow material; a light source, positioned to illuminate the glow material when the light source is activated; and a light source controller, for sequencing sufficient on and off activation of the light source to maintain activate the glow material over a period of time.

Abstract: The present invention provides a process for the preparation of ethene by vapour phase chemical dehydration of a feed comprising ethanol and optionally water and/or ethoxyethane, said process comprising contacting a dried supported heteropoly acid catalyst in a reactor with the feed-stream having feed temperature of at least 200° C.; wherein the pressure inside the reactor is at least 0.80 MPa but less than 1.80 MPa; and before the supported heteropolyacid catalyst is contacted with the feed-stream having a feed temperature of at least 200° C., the process is initiated by: (i) drying a supported heteropolyacid catalyst in a reactor under a stream of inert gas having a feed temperature of from above 100° C. to 200° C.; and (ii) contacting the dried supported heteropolyacid catalyst with an ethanol-containing vapour stream having a feed temperature of from above 100° C. to 160° C.

Abstract: A semiconductor device may include a plurality of memory cells, and at least one peripheral circuit coupled to the plurality of memory cells and comprising a superlattice. The superlattice may include a plurality of stacked groups of layers with each group of layers comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer thereon constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include a first power switching device configured to couple the at least one peripheral circuit to a first voltage supply during a first operating mode, and a second power switching device configured to couple the at least one peripheral circuit to a second voltage supply lower than the first voltage supply during a second operating mode.

Abstract: A surface acoustic wave (SAW) device includes: a base substrate; a piezo-electric material layer; at least one interdigitated electrode pair disposed on the piezo-electric material layer; and an acoustic wave suppression layer disposed between the piezo-electric material layer and the base substrate, the acoustic wave suppression layer being configured to suppress an acoustic wave propagating in a direction from the piezo-electric material layer to the base substrate.

Abstract: A multiplexer device includes a single die, at least three acoustic filters and at least one antenna port arranged on the single die, and a shunt inductance connected between each of the at least one antenna port and ground. Each acoustic filter includes one of a transmit or receive filter corresponding to a predetermined radio frequency band. The at least one antenna port is connected to at least one antenna, respectively, where each of the at least one antenna port is further connected to at least one acoustic filter arranged on the single die, and is configured to pass RF signals corresponding to the predetermined RF band of the connected at least one acoustic filter. The shunt inductance provides impedance matching between each of the at least one antenna port and each of the at least one acoustic filter connect to the at least one antenna port.

Abstract: A process for the preparation of an alkene from an oxygenate comprising contacting a reactant feedstream comprising at least one oxygenate reactant and water with a supported heteropolyacid catalyst at a temperature of at least 170° C., wherein the process is initiated using a start-up procedure comprising the following steps: (i) heating the supported heteropolyacid catalyst to a temperature of at least 220° C.; (ii) maintaining the heat-treated supported heteropolyacid catalyst of step (i) at a temperature of at least 220° C. for a time sufficient to remove bound water from the heteropolyacid component of the supported heteropolyacid catalyst; (iii) under an anhydrous atmosphere, reducing the temperature of the heat-treated supported heteropolyacid catalyst of step (ii) to a temperature below 220° C.; and (iv) contacting the supported heteropolyacid catalyst of step (iii) with the reactant feedstream at a temperature of at least 170° C.

Abstract: The present invention provides a process for the preparation of ethene by vapour phase chemical dehydration of a feed-stream comprising ethanol and optionally water and/or ethoxy ethane, said process comprising contacting a dried supported heteropolyacid catalyst in a reactor with the feed-stream having a feed temperature of at least 200° C.; wherein before the supported heteropolyacid catalyst is contacted with the feed-stream having a feed temperature of at least 200° C., the process is initiated by: (i) drying a supported heteropolyacid catalyst in a reactor under a stream of inert gas having a feed temperature of from above 100° C. to 200° C.; and (ii) contacting the dried supported heteropolyacid catalyst with an ethanol-containing vapour stream having a feed temperature of from above 100° C. to 160° C.

Abstract: An apparatus includes a silicon (Si) substrate having a first surface and a second surface, the silicon substrate having a resistivity at room temperature greater than approximately 1000 ?-cm, and less than approximately 15000 ?-cm; and a piezoelectric layer disposed over the substrate and having a first surface and a second surface. The piezoelectric layer may have a thickness in the range of approximately 0.5 ?m to approximately 30.0 ?m, and is substantially without iron (Fe).

Abstract: A surface acoustic wave (SAW) resonator structure includes a substrate, a piezoelectric layer disposed on the substrate, and an interdigital transducer (IDT) electrode disposed over the piezoelectric layer. The IDT electrode includes multiple busbars and multiple electrode fingers extending from each busbar, where the electrode fingers are configured to generate surface acoustic waves in the piezoelectric layer. The SAW resonator structure further includes dielectric material disposed between the piezoelectric layer and at least at portion of the IDT. The dielectric material may be positioned below tips of the electrode fingers, thereby mass-loading the electrode fingers.

Abstract: The present invention provides a process for the preparation of ethene by vapour phase chemical dehydration of a feed comprising ethanol, said process comprising contacting the feed with a supported heteropolyacid catalyst in a reactor, wherein the feed temperature is at least 250° C. and the pressure inside the reactor is at least 0.80 MPa but less than 1.80 MPa.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the piezoelectric layer reflects acoustic waves and reduces the incidence of spurious modes in the piezoelectric layer.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A surface of the layer has a smoothness sufficient to foster atomic bonding between layer and the piezoelectric layer. A plurality of features provided on a surface of the substrate reflects acoustic waves and reduce the incidence of spurious modes in the piezoelectric layer.

Abstract: A surface acoustic wave (SAW) resonator includes a piezoelectric layer disposed over a substrate, and a plurality of electrodes disposed over the first surface of the piezoelectric layer. A layer is disposed between the substrate and the piezoelectric layer. A silicon layer disposed between a first surface of the layer and a second surface of the piezoelectric layer. A first surface of the silicon layer has a smoothness sufficient to foster atomic bonding between the first surface of the silicon layer and the second surface of the piezoelectric layer.