Patents by Inventor Stephen W. Bedell
Stephen W. Bedell has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11948985Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.Type: GrantFiled: April 18, 2022Date of Patent: April 2, 2024Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Steven J. Holmes, Devendra K. Sadana, Sean Hart, Patryk Gumann, Stephen W. Bedell, Ning Li
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Patent number: 11864906Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.Type: GrantFiled: June 20, 2019Date of Patent: January 9, 2024Assignee: International Business Machines CorporationInventors: Steven J. Holmes, Devendra K. Sadana, Stephen W. Bedell
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Patent number: 11819333Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.Type: GrantFiled: June 20, 2019Date of Patent: November 21, 2023Assignee: International Business Machines CorporationInventors: Steven J. Holmes, Devendra K. Sadana, Stephen W. Bedell
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Publication number: 20230363694Abstract: A method includes implanting an implantable biosensor within a subject where the implantable biosensor has an array of light sources and an array of light detectors, activating the array of light sources to direct light signals at a targeted tissue site in the subject, capturing, with the light detectors, the light signals reflected off the targeted site, calculating a roundtrip propagation time for each of the light signals and comparing the roundtrip propagation time for each of the light signals against previous calculated respective roundtrip propagation times to determine an occurrence of a change in the targeted tissue site.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Inventors: Steven J. Holmes, Devendra K. Sadana, Stephen W. Bedell
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Publication number: 20230255123Abstract: Systems and techniques that facilitate quantum tuning via permanent magnetic flux elements are provided. In various embodiments, a system can comprise a qubit device. In various aspects, the system can further comprise a permanent magnet having a first magnetic flux, wherein an operational frequency of the qubit device is based on the first magnetic flux. In various instances, the system can further comprise an electromagnet having a second magnetic flux that tunes the first magnetic flux. In various cases, the permanent magnet can comprise a nanoparticle magnet. In various embodiments, the nanoparticle magnet can comprise manganese nanoparticles embedded in a silicon matrix. In various aspects, the system can further comprise an electrode that applies an electric current to the nanoparticle magnet in a presence of the second magnetic flux, thereby changing a strength of the first magnetic flux.Type: ApplicationFiled: March 29, 2023Publication date: August 10, 2023Inventors: Steven J. Holmes, Devendra K. Sadana, David C. Mckay, Jared Barney Hertzberg, Stephen W. Bedell, Ning Li
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Publication number: 20230247917Abstract: A method of producing a quantum circuit includes forming a mask on a substrate to cover a first portion of the substrate, implanting a second portion of the substrate with ions, and removing the mask, thereby providing a nanowire. The method further includes forming a first lead and a second lead, the first lead and the second lead each partially overlapping the nanowire. In operation, a portion of the nanowire between the first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction. The method further includes forming a third lead and a fourth lead, one of the third and fourth leads partially overlapping the nanowire, wherein the third lead is separated from the fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction. The nanowire is configured to connect the quantum dot Josephson junction and the Dolan bridge Josephson junction in series.Type: ApplicationFiled: March 29, 2023Publication date: August 3, 2023Inventors: Steven J. Holmes, Devendra K. Sadana, Ning Li, Stephen W. Bedell
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Patent number: 11697889Abstract: A structure including a three-dimensionally stretchable single crystalline semiconductor membrane located on a substrate is provided. The structure is formed by providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate. A single crystalline semiconductor material membrane is then formed on a physically exposed surface of the 3D wavy silicon germanium alloy layer. A substrate is then formed on a physically exposed surface of the single crystalline semiconductor material membrane. The 3D wavy silicon germanium alloy layer and the silicon handler substrate are thereafter removed providing the structure.Type: GrantFiled: December 18, 2019Date of Patent: July 11, 2023Assignee: International Business Machines CorporationInventors: Alexander Reznicek, Karthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari, Keith E. Fogel
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Publication number: 20230210018Abstract: A vertical Josephson Junction (JJ) qubit device that is fabricated from crystalline silicon material is provided. The JJ device has a substrate of epitaxial silicon, a lower superconducting electrode that is a superconducting region of the epitaxial silicon and an upper superconducting electrode of a metallic superconductor. The JJ device also has a junction layer. A section of the junction layer between the lower and upper superconducting electrodes forms a junction of the JJ device. Resonator and/or capacitor wiring of the JJ device is also fabricated using the metallic superconductor. The superconducting region is epitaxial silicon that is doped or implanted with boron or gallium. The substrate, the junction layer, and the implanted epitaxial silicon share a contiguous crystalline structure.Type: ApplicationFiled: December 28, 2021Publication date: June 29, 2023Inventors: Steven J. Holmes, Devendra K. Sadana, Oleg Gluschenkov, Stephen W. Bedell
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Patent number: 11672187Abstract: Systems and techniques that facilitate quantum tuning via permanent magnetic flux elements are provided. In various embodiments, a system can comprise a qubit device. In various aspects, the system can further comprise a permanent magnet having a first magnetic flux, wherein an operational frequency of the qubit device is based on the first magnetic flux. In various instances, the system can further comprise an electromagnet having a second magnetic flux that tunes the first magnetic flux. In various cases, the permanent magnet can comprise a nanoparticle magnet. In various embodiments, the nanoparticle magnet can comprise manganese nanoparticles embedded in a silicon matrix. In various aspects, the system can further comprise an electrode that applies an electric current to the nanoparticle magnet in a presence of the second magnetic flux, thereby changing a strength of the first magnetic flux.Type: GrantFiled: March 25, 2020Date of Patent: June 6, 2023Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Steven J. Holmes, Devendra K. Sadana, David C. McKay, Jared Barney Hertzberg, Stephen W. Bedell, Ning Li
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Patent number: 11665981Abstract: A method of producing a quantum circuit includes forming a mask on a substrate to cover a first portion of the substrate, implanting a second portion of the substrate with ions, and removing the mask, thereby providing a nanowire. The method further includes forming a first lead and a second lead, the first lead and the second lead each partially overlapping the nanowire. In operation, a portion of the nanowire between the first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction. The method further includes forming a third lead and a fourth lead, one of the third and fourth leads partially overlapping the nanowire, wherein the third lead is separated from the fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction. The nanowire is configured to connect the quantum dot Josephson junction and the Dolan bridge Josephson junction in series.Type: GrantFiled: March 5, 2021Date of Patent: May 30, 2023Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Steven J. Holmes, Devendra V Sadana, Ning Li, Stephen W. Bedell
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Publication number: 20230133709Abstract: A gated Josephson junction includes a substrate and a vertical Josephson junction formed on the substrate and extending substantially normal the substrate. The vertical Josephson junction includes a first superconducting layer, a semiconducting layer, and a second superconducting layer. The first superconducting layer, the semiconducting layer, and the second superconducting layer form a stack that is substantially perpendicular to the substrate. The gated Josephson junction includes a gate dielectric layer in contact with the first superconducting layer, the semiconducting layer, and the second superconducting layer at opposing side surfaces of the vertical Josephson junction, and a gate electrically conducting layer in contact with the gate dielectric layer. The gate electrically conducting layer is separated from the vertical Josephson junction by the gate dielectric layer.Type: ApplicationFiled: December 29, 2022Publication date: May 4, 2023Inventors: Devendra K. Sadana, Ning Li, Stephen W. Bedell, Sean Hart, Patryk Gumann
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Publication number: 20230116053Abstract: Compound semiconductor and silicon-based structures are epitaxially formed on semiconductor substrates and transferred to a carrier substrate. The transferred structures can be used to form discrete photovoltaic and light-emitting devices on the carrier substrate. Silicon-containing layers grown on doped donor semiconductor substrates and compound semiconductor layers grown on off-cut semiconductor substrates form elements of the devices. The carrier substrates may be electrically insulating substrates or include electrically insulating layers to which photovoltaic and/or light-emitting structures are bonded.Type: ApplicationFiled: September 29, 2021Publication date: April 13, 2023Inventors: Devendra K. Sadana, Ning Li, Ghavam G. Shahidi, Frank Robert Libsch, Stephen W. Bedell
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Patent number: 11588210Abstract: Methods of forming a controllable resistive element include forming source and drain regions in a substrate. A battery stack is formed on a substrate between the source and drain regions. Respective anode and cathode electrical connections are formed to the battery stack. Respective source and drain electrical connections are formed.Type: GrantFiled: November 6, 2017Date of Patent: February 21, 2023Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Stephen W. Bedell, Joel P. De Souza, Yun Seog Lee, Ning Li, Devendra K. Sadana
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Patent number: 11581472Abstract: A gated Josephson junction includes a substrate and a vertical Josephson junction formed on the substrate and extending substantially normal the substrate. The vertical Josephson junction includes a first superconducting layer, a semiconducting layer, and a second superconducting layer. The first superconducting layer, the semiconducting layer, and the second superconducting layer form a stack that is substantially perpendicular to the substrate. The gated Josephson junction includes a gate dielectric layer in contact with the first superconducting layer, the semiconducting layer, and the second superconducting layer at opposing side surfaces of the vertical Josephson junction, and a gate electrically conducting layer in contact with the gate dielectric layer. The gate electrically conducting layer is separated from the vertical Josephson junction by the gate dielectric layer.Type: GrantFiled: August 7, 2019Date of Patent: February 14, 2023Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Devendra K. Sadana, Ning Li, Stephen W. Bedell, Sean Hart, Patryk Gumann
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Patent number: 11547440Abstract: An access system having a communication component that interfaces with a first device and a second device, where the first device is located inside or on an entity and coupled to a biological organism of the entity, and where the second device is located outside the entity and a controller component that controls a function of the first device, employing the communication component, to provide treatment to the biological organism of the entity coupled to the first device based on a request received from the second device.Type: GrantFiled: November 26, 2018Date of Patent: January 10, 2023Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Steven J. Holmes, Bruce B. Doris, Devendra K. Sadana, Stephen W. Bedell, Jia Chen, Hariklia Deligianni
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Patent number: 11515460Abstract: A quantum computing device is fabricated by forming, on a superconductor layer, a first resist pattern defining a device region and a sensing region within the device region. The superconductor layer within the sensing region is removed, exposing a region of an underlying semiconductor layer outside the device region. The exposed region of the semiconductor layer is implanted, forming an isolation region surrounding the device region. Using an etching process subsequent to the implanting, the sensing region and a portion of the device region of the superconductor layer adjacent to the isolation region are exposed. By depositing a first metal layer within the sensing region, a tunnel junction gate is formed. A reflectrometry wire comprising a second metal within the reflectrometry region is formed. A nanorod contact using the second metal within the portion of the device region outside the sensing region is formed.Type: GrantFiled: November 11, 2019Date of Patent: November 29, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Steven J. Holmes, Devendra K. Sadana, Sean Hart, Ning Li, Stephen W. Bedell, Patryk Gumann
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Patent number: 11482573Abstract: A photovoltaic device including a photovoltaic cell and method of use is disclosed. The photovoltaic cell includes at least a first photovoltaic layer and a second photovoltaic layer arranged in a stack. The first photovoltaic layer has a first thickness and receives light at its top surface. A second photovoltaic layer has a second thickness and is disposed beneath the first photovoltaic layer and receives light passing through the first photovoltaic layer. The first thickness and the second thickness are selected so that a first light absorption at the first photovoltaic layer is equal to a second light absorption at the second photovoltaic layer. The photovoltaic cell is irradiated at its top surface with monochromatic light to generate a current.Type: GrantFiled: November 15, 2017Date of Patent: October 25, 2022Assignee: International Business Machines CorporationInventors: Stephen W. Bedell, Ning Li, Qinglong Li, Kunal Mukherjee, Devendra Sadana, Ghavam G. Shahidi
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Publication number: 20220238663Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.Type: ApplicationFiled: April 18, 2022Publication date: July 28, 2022Inventors: Steven J. Holmes, Devendra K. Sadana, Sean Hart, Patryk Gumann, Stephen W. Bedell, Ning Li
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Patent number: 11316022Abstract: Devices, systems, methods, computer-implemented methods, apparatus, and/or computer program products that can facilitate a suspended Majorana fermion device comprising an ion implant defined nanorod in a semiconducting device are provided. According to an embodiment, a quantum computing device can comprise a Majorana fermion device coupled to an ion implanted region. The quantum computing device can further comprise an encapsulation film coupled to the ion implanted region and a substrate layer. The encapsulation film suspends the Majorana fermion device in the quantum computing device.Type: GrantFiled: November 19, 2019Date of Patent: April 26, 2022Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Steven J. Holmes, Devendra K. Sadana, Sean Hart, Patryk Gumann, Stephen W. Bedell, Ning Li
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Patent number: 11302857Abstract: A method for fabricating an active cooling structure, comprising forming an array of Superconductor-Insulator-Normal Metal (NIS) tunnel structures between a non-conducting layer and a superconducting layer. The non-superconducting layer may comprise a plurality of non-superconducting traces running in a first direction. The superconductor layer may comprise a plurality of superconducting traces running in a second direction.Type: GrantFiled: November 19, 2019Date of Patent: April 12, 2022Assignee: International Business Machines CorporationInventors: Steven J. Holmes, Devendra K. Sadana, Stephen W. Bedell, Ning Li