Abstract: A method and apparatus for obtaining dielectric constant and other measurements of a sample, comprising an open cavity resonator; a microwave energy generator for creating a resonating microwave in the open cavity resonator; a predetermined dielectric material having a high dielectric constant in the range of 2 to 100,000 substantially filling the region in which a microwave resonates; the dielectric material adapted to receive a sample for measurement of the dielectric properties of the sample; whereby during operation the resonating microwave beam is substantially immersed in the predetermined dielectric material such that the effective electrical spot size and beam cross-section along the cylindrical axis of the resonating microwave is reduced as a function of the inverse of the square root of the predetermined dielectric material dielectric constant. The dielectric constant or loss tangent of the sample may be determined based upon the change in the cavity's resonant frequency modes.

Abstract: A method and apparatus for obtaining dielectric constant and other measurements of a sample, comprising an open cavity resonator; a microwave energy generator for creating a resonating microwave in the open cavity resonator; a predetermined dielectric material having a high dielectric constant in the range of 2 to 100,000 substantially filling the region in which a microwave resonates; the dielectric material adapted to receive a sample for measurement of the dielectric properties of the sample; whereby during operation the resonating microwave beam is substantially immersed in the predetermined dielectric material such that the effective electrical spot size and beam cross-section along the cylindrical axis of the resonating microwave is reduced as a function of the inverse of the square root of the predetermined dielectric material dielectric constant. The dielectric constant or loss tangent of the sample may be determined based upon the change in the cavity's resonant frequency modes.

Abstract: A detector for electromagnetic radiation such as millimeter wave and infrared employs a ring-shaped ferroelectric element having a temperature affected by an absorber for the radiation. The dielectric constant of the ferroelectric material is a strong function of the temperature near its Curie temperature. The resonant frequency of the ferroelectric element is detected by applying a swept-frequency signal to the circuit and detecting the frequency which enhances the energy of the pulse. A two-dimensional camera for the radiation employs a two-dimensional array of these ferroelectric resonant circuits and a system for rapidly interrogating their resonant frequencies on a sequential basis.

Abstract: A detector for electromagnetic radiation such as millimeter wave and infrared employs a ring-shaped ferroelectric element having a temperature affected by an absorber for the radiation. The dielectric constant of the ferroelectric material is a strong function of the temperature near its Curie temperature. The resonant frequency of the ferroelectric element is detected by applying a swept-frequency signal to the circuit and detecting the frequency which enhances the energy of the pulse. A two-dimensional camera for the radiation employs a two-dimensional array of these ferroelectric resonant circuits and a system for rapidly interrogating their resonant frequencies on a sequential basis.

Abstract: Rare earth metal containing compounds of the formula Sr2YbSbO6 have been prepared with high critical temperature thin film superconductor structures, and can be fabricated into a superconductor insulator superconductor step edge Josephson junction, as well as being used in other ferroelectrics, pyroelectrics, and hybrid device structures.

Abstract: Rare earth metal containing compounds of the formula Sr2LuSbO6 and Sr2LaSbO6 have been prepared as high critical temperature thin film superconductor structures, and can be used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Rare earth metal containing compounds of the general formula Sr2RESbO6, wherein RE is a rare earth metal, have been prepared as dielectric substrates and buffer layers in thin film superconductor structures, and can be used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Rare earth metal containing compounds of the formula Sr2LuSbO6 have been prepared with high critical temperature thin film superconductor structures, and can be fabricated into an antenna, as well as being used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric perovskite-structured materials having reasonably low and fairly temperature insensitive dielectric constants (stable dielectric constants over a wide range of operating temperatures of ?80° C. to 100° C.), reasonable loss tangents (<˜10?1), high tunability, and significantly lowered Curie temperature below the temperature range of operation for previous undoped perovskite structures are provided. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure. This single-phase structure or a variant of it with a Ti rich composition, provided herein, allows for pulsed-laser-deposition of a thin film with uniform transfer of the structure of the target into the deposited film, which enables production of very small, lightweight devices that are extremely efficient and consume little power.

Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric lead-based perovskite-structured materials having reasonably low and fairly temperature insensitive dielectric constants (stable dielectric constants over a wide range of operating temperatures of ?80° C. to 100° C.), reasonable loss tangents (<˜10?1), high tunability, and significantly lowered Curie temperature below the temperature range of operation for previous undoped perovskite structures are provided. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure. This single-phase structure or a variant of it with a Ti rich composition, provided herein, allows for pulsed-laser-deposition of a thin film with uniform transfer of the structure of the target into the deposited film, which enables production of very small, lightweight devices that are extremely efficient and consume little power.

Abstract: Apparatus for the precise positioning of a sample of dielectric material into a cavity resonator system for obtaining dielectric constant, and other measurements. Precision micrometer drive units are provided to move the sample about a vertical axis, to tilt the sample, and to move the sample in X, Y and Z directions. The drive units are positioned on a bearing slide for ease of sample positioning into and out of the cavity. Selected drive units are controllable from a remote location so that the apparatus may be utilized in an environmental chamber whereby measurements may be accomplished without opening the chamber after each measurement. All components of the resonator system, positioning units, cables, etc. are chosen such that they are operable over the desired temperature range of operation.

Abstract: Rare earth metal containing compounds of the general formula Sr2RESbO6, wherein RE is a rare earth metal, have been prepared with high critical temperature thin film superconductor strucutures, and can be used in other ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Single-phase, non-cubic and single-phase, cubic ferroelectric/paraelectric materials comprising a charge compensated lead-based perovskite having the general formula ABO3 is provided, which has reasonably low and fairly temperature insensitive dielectric constants over operating temperatures of −80° C. to 100° C., reasonable loss tangents (<˜10−1), and high tunability. The FE/PE materials of the present invention have dilute charge-compensated substitutions in the Ti site of the perovskite structure.

Abstract: The invention discloses the utilization of various transmission lines that entail a ferroelectric material as dielectric substrate to introduce an impedance shift by means of an externally applied d.c. bias, which alters the effective length between the input and output signals of the transmission lines of microwave couplers.

Abstract: Compounds of the general formula A4MeSb3O12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Compounds of the of the general formula La3−zMezBa3Ca1−vNcvCu7O16+x, wherein Me can be a rare earth metal or an alkaline metal ion selected from the group consisting of yttrium (Y), ytterbium (Yb), sodium (Na) and Nc can be a 2+ ion selected from the group consisting of magnesium (Mg) and cadmium (Cd) have been prepared as the HTSC in thin film superconductors. These compounds can be used as thin film high critical superconductors in thin film high critical temperature superconducting structures and antennas and in multilayered structures and devices such as Josephson junctions, broadband impedance transformers and both flux flow and field effect transistors TABLE 1 Properties of La3-zMezBa3Ca1-vCu7O16+x Compounds. Lattice Parameter (Å) Onset Compound c &agr; Tc (K.) La3Ba3CaCu7O16+x 11.650 3.865 72  11.

Abstract: The microwave properties of numerous perovskite antimonates like A2MeSbO6 where A=Ba or Sr, Me=a rare earth, Y, Sc, Ga, or In and A4MeSb3O12 where A=Ba or Sr and M=Li, Na or K were measured at 10 Ghz and 300 K. Using the microwave properties and lattice parameters of these materials, the Clausius-Mossotti relationship and a nonlinear regression fitting program, the polarizability of Sb5+ was investigated and determined to be 1.18±0.49 A3. This low polarizability and the low loss of antimonates in general indicate that Sb5+ is an excellent candidate for use as a constituent in the fabrication of low dielectric constant, low loss, lattice matching perovskite oxide microwave substrates.

Abstract: Compounds of the general formula Ca.sub.2 MeSbO.sub.6 where Me is a 3+ ion selected from the group consisting of aluminum (Al), scandium (Sc), indium (In), gallium (Ga), or a rare earth metal have been prepared and included as the substrate or barrier dielectric in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Compounds of the general formula A.sub.4 MeSb.sub.3 O.sub.12 wherein A is either barium (Ba) or strontium (Sr) and Me is an alkali metal ion selected from the group consisting of lithium (Li), sodium (Na) and potassium (K) have been prepared and included in high critical temperature thin film superconductors, ferroelectrics, pyroelectrics, piezoelectrics, and hybrid device structures.

Abstract: Compounds of the of the general formula La.sub.3-z Me.sub.z Ba.sub.3 Ca.sub.1-v Nc.sub.v Cu.sub.7 O.sub.16+x, wherein Me can be a rare earth metal or an alkaline metal ion selected from the group consisting of yttrium (Y), ytterbium (Yb), sodium (Na) and Nc can be a 2+ion selected from the group consisting of magnesium (Mg) and cadmium (Cd) have been prepared as the HTSC in thin film superconductors.