Patents by Inventor Steven C. Tidrow

Steven C. Tidrow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5972845
    Abstract: Compounds of the of the general formula La.sub.3-z Me.sub.z Ba.sub.3 Ca.sub.1-v Nc.sub.v Cu.sub.7 O.sub.16+x, wherein Me can be a rare earth metal or an alkaline metal ion selected from the group consisting of yttrium (Y), ytterbium (Yb), sodium (Na) and Nc can be a 2+ion selected from the group consisting of magnesium (Mg) and cadmium (Cd) have been prepared as the HTSC in thin film superconductors. These compounds can be used as thin film high critical superconductors in thin film high critical temperature superconducting structures and antennas and in multilayered structures and devices such as Josephson junctions, broadband impedance transformers and both flux flow and field effect transistors.
    Type: Grant
    Filed: November 26, 1997
    Date of Patent: October 26, 1999
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Arthur Tauber, Steven C. Tidrow
  • Patent number: 5814584
    Abstract: Compounds of the general formula A.sub.2 MeSbO.sub.6 wherein A is either barium (Ba) or strontium (Sr) and Me is a non-magnetic ion selected from the group consisting of scandium (Sc), indium (In) and gallium (Ga) have been prepared and included in high critical temperature thin film superconductor structures.
    Type: Grant
    Filed: June 30, 1995
    Date of Patent: September 29, 1998
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Arthur Tauber, William D. Wilber, Steven C. Tidrow, Robert D. Finnegan, Donald W. Eckart
  • Patent number: 5691279
    Abstract: c-axis oriented high temperature superconductors are deposited onto new compositions of garnets using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure; a block temperature of 730.degree. C., a substrate surface temperature of 790.degree. C. and a laser fluence of 1 to 2 Joules/cm.sup.2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the new compositions of garnets exhibit a mismatch of less than 7 percent with the a and b lattice parameters of the HTSC.
    Type: Grant
    Filed: April 18, 1995
    Date of Patent: November 25, 1997
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Arthur Tauber, Steven C. Tidrow
  • Patent number: 5608282
    Abstract: A piezoelectrically controlled superconducting switch is provided for use in superconducting devices and piezoelectric devices. This switch includes a substrate, a superconductor which is bonded to the substrate, and a piezoelectric subassembly which has a load applicator and voltage source for straining the superconductor and for changing its superconductor curve of resistivity versus temperature.
    Type: Grant
    Filed: April 19, 1995
    Date of Patent: March 4, 1997
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: William D. Wilber, Ernest Potenziani, II, Steven C. Tidrow, Arthur Tauber, Donald W. Eckart
  • Patent number: 5593742
    Abstract: An ablation process by which fused deposits of silicon particles are accuated on a substrate of selected material in accordance with whether microclusters of spherical configurations or microfilaments of cylindrical configurations are to be fabricated. Silicon ablation is accomplished in an inert gas atmosphere with an excimer laser that generates light pulses of which the wavelength and frequency are controlled to fix the energy level thereof. The pressure of the inert gas atmosphere is also controlled in accordance with whether microclusters or microfilaments are to be fabricated.
    Type: Grant
    Filed: August 24, 1995
    Date of Patent: January 14, 1997
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Robert A. Lux, James A. Harvey, Arthur Tauber, Steven C. Tidrow
  • Patent number: 5432313
    Abstract: Uniform films deposited on substrates by laser ablation of targets are inased in size by configuring irradiated target areas as curves rather than flat surfaces. Since material ejected from the target area leaves in a direction normal to the target area, a curved surface results in the material following a trajectory which is at an acute angle to the surface of the substrate being coated. This results in a cone of ejected material which diverges, thus covering an area larger than the irradiated target area. The irradiated target area may be convex, concave or be comprised of a plurality of juxtaposed convex surfaces.
    Type: Grant
    Filed: June 23, 1993
    Date of Patent: July 11, 1995
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Steven C. Tidrow, William D. Wilber, Arthur Tauber
  • Patent number: 5418215
    Abstract: c-axis oriented microwave quality HTSC films are deposited onto single crystals of gadolinium gallium garnet (GGG) using pulsed laser deposition (PLD) with conditions of 85 mTorr of oxygen partial pressure, a block temperature of 730.degree. C., a substrate surface temperature of 790.degree. C. and a laser fluence of 1 to 2 Joules/cm.sub.2 at the target, a laser repetition rate of 10 Hz and a target to substrate distance of 7 cm and in which the a and b lattice parameters of the GGG exhibit a mismatch of less than 2.5 percent with the a and b lattice parameters of the HTSC.
    Type: Grant
    Filed: April 12, 1994
    Date of Patent: May 23, 1995
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Arthur Tauber, Steven C. Tidrow
  • Patent number: 5340799
    Abstract: Rare-earth alkaline metal titanates are used as buffer layers substrates, and oxygen diffusion barriers for the growth of high critical temperature superconductors, ferroelectrics, pyroelectrics and piezoelectrics.
    Type: Grant
    Filed: June 18, 1993
    Date of Patent: August 23, 1994
    Assignee: The United States of America as represented by the Secretary of the Army
    Inventors: Arthur Tauber, Steven C. Tidrow