Abstract: A device and method for controlling the temperature of a plasma chamber inside wall or other surfaces exposed to the plasma by a plurality of temperature control systems. A plasma process within the plasma chamber can be controlled by independently controlling the temperature of segments of the wall or other surfaces.

Abstract: A plasma reactor including a vacuum chamber and a holding structure constructed and arranged to hold a chuck assembly and a plasma source assembly. The holding structure at least partially constitutes a wall of said vacuum chamber. The holding structure can pivot around a pivot point relative to a wall of the vacuum chamber thus opening up to the inside of the vacuum chamber.

Abstract: An apparatus and method for determining the connection status between a first apparatus and a second apparatus configured to be electrically and mechanically coupled to the first apparatus. A probe is coupled to the first apparatus. The probe is electrically coupled to the second apparatus when the first apparatus and the second apparatus are coupled. When the first apparatus and the second apparatus are separated, the probe disengages the second apparatus to signal disconnection of the first apparatus and the second apparatus.

Abstract: A method for manufacturing a substrate with a plasma processing system having preconditioned components. The method comprises obtaining a component of a plasma processing system that has been coated with a film of material, disposing the component in a plasma processing chamber, disposing a substrate on a chuck in the plasma processing chamber, and forming a plasma in a processing region within the plasma processing chamber.

Abstract: An apparatus (100) senses a degree of cleanliness of a plasma reactor having a chamber (102) containing a plasma (103) that emits light (104) during a process conducted in the chamber (102). The apparatus (100) also has a light sensing element (180), configured to sense an intensity of the light (104) emitted by the plasma (103) after the light (104) passes through a film (135) that accrues in the chamber (102) during the process, and to provide a light intensity indication signal, and an electronics assembly (170) configured to receive the light intensity indication signal and to provide an indication of the degree of cleanliness of the plasma reactor.

Abstract: This invention relates to an improved component for a plasma processing system, and more particularly, to fasteners for internal chamber parts in a plasma processing chamber. Further, this invention relates to a method of manufacturing such a fastener.

Abstract: A plasma processing system is provided that allows for monitoring a plasma processing system during plasma processing. The plasma processing system includes a processing chamber and a monitoring system for monitoring conditions of the processing chamber. By providing tools within a tool housing that is protected from the plasma environment but still in very close proximity thereto, better process monitoring can be achieved.

Abstract: A method and system for reducing the cost of a vacuum processing system by utilizing separately fabricated parts for the walls and the tops and bottoms of chambers. Walls are formed from cylinders (e.g., aluminum tubing or rolled ring forgings), and plates are then hermetically sealed to the top and bottom of the cylinder. Fasteners (and the vacuum inside the chamber) clamp the plates to the cylinder.

Abstract: This invention relates to a plasma processing system. A common problem in the manufacture of semiconductors is the maintenance of a constant fluid flow throughout the chamber in which the semiconductors are being etched. The focus ring described herein helps control fluid flow such that all (or substantially all) of a substrate (e.g., semiconductor) surface is exposed to a constant flow of plasma throughout the etching process. An even fluid flow is maintained by adjusting the configuration of a focus ring, a pumping baffle, or a focus ring working with an auxiliary focus ring with respect to the semiconductor surface. By manipulating the position of the focus ring, pumping baffle, and auxiliary focus ring, fluid flow over the surface of the semiconductor can be increased, decreased, or kept stagnant.

Abstract: A focus ring configured to be coupled to a substrate holder comprises a first surface exposed to a process; a second surface, opposite the first surface, for coupling to an upper surface of the substrate holder; an inner radial edge for facing a periphery of a substrate; and an outer radial edge. The second surface further comprises one or more contact features, each of which is configured to mate with one or more receiving features formed within the upper surface of the substrate holder. The focus ring can further comprise a clamping feature for mechanically clamping the focus ring to the substrate holder. Furthermore, a gas can be supplied to the contact space residing between the one or more contact features on the focus ring and the one or more receiving features on the substrate holder.

Abstract: A thermally zoned substrate holder including a substantially cylindrical base having top and bottom surfaces configured to support a substrate. A plurality of temperature control elements are disposed within the base. An insulator thermally separates the temperature control elements. The insulator is made from an insulting material having a lower coefficient of thermal conductivity than the base (e.g., a gas-or vacuum-filled chamber).

Abstract: A probe cartridge assembly and a multi-probe assembly (10) including a mounting plate having a plurality of the probe cartridge assemblies mounted on the mounting plate. The probe cartridge assembly generally includes a mounting member, a probe insulator (30), a probe (40), a ferrule (50), a lead insulator (60), a retaining member (70), and a wire having an electrical lead. The electrical lead is positioned within a cavity in the ferrule, and an inclined surface of the ferrule is contacted to an inclined surface of the probe within an area defined by the probe insulator and the lead insulator. The probe insulator and the lead insulator are held within an area defined by the mounting member and the retaining member. The retaining member and the mounting member are adjustably mated to each other in order to provide a clamping force to ensure proper electrical interconnection between the electric lead, the ferrule, and the probe.

Abstract: An electrostatically shielded radio frequency (ESRF) plasma apparatus includes a process chamber which encloses a plasma area and a resonator assembly which surrounds the plasma area and includes a coil. The ESRF plasma apparatus also includes a clamping plate which secures the resonator assembly to at least the process chamber. In this manner, the geometry of the resonator chamber can be altered while maintaining the plasma area in an evacuated state. Additionally, an electrostatic shield may be provided and the ESRF plasma apparatus may also be configured such that the electrostatic shield can be replaced while maintaining the plasma area in an evacuated state. Additionally, the resonator assembly may be constructed of sheet metal and may be assembled using standard flanges. Additionally, seals, which are used to seal the plasma area and the resonator assembly, are standard seals.

Abstract: A plasma source assembly including an outer shield, a dielectric chamber wall, and a helical coil provided between the outer shield and the dielectric chamber wall. The plasma source assembly also includes a coil support assembly configured to facilitate repeatable performance of the helical coil. Preferably, the assembly includes a plenum cooling plate that is configured to supply cooling fluid to a first cooling rod provided within a resonator cavity defined by the chamber wall and the outer shield, and receive cooling fluid from a second cooling rod provided within the resonator cavity. The assembly preferably also includes a spacer provided between the first cooling rod and the second cooling rod, and coil insulators having holes configured to receive the helical coil.

Abstract: A seal for sealing and load bearing a process tube in a vacuum system including a seal member and a load bearing spacer provided in a seal cavity. The seal generally includes a seal cavity provided in a housing, where the seal cavity is configured opposite the process tube. At least one load bearing spacer is received within the seal cavity and adapted to contact the process tube is mounted to the housing. Additionally, at least one seal member is received within the seal cavity and adapted to contact the process tube.

Abstract: A plasma reactor sub-assembly includes both an electrostatic shield and a process tube. Optionally, the electrostatic shield and the process tube are connected. Alternatively, they are configured to fit together without being physically connected. The sub-assembly may be manufactured using a process tube nested within the circumference of an electrostatic shield, en electrostatic shield patterned directly on a process tube using, for example, thin film deposition, or a process tube bonded or not bonded to an electrostatic shield made of a flexible, electrical film material.

Abstract: A chuck assembly for supporting a workpiece within a plasma reactor chamber having sidewalls surrounding an interior region capable of supporting a plasma. The assembly includes a chuck base and at least one support arm extending outwardly from the chuck base perimeter to the chamber sidewalls. The chuck assembly includes a workpiece support member which is supported by one or more vertical translation members arranged between and operatively connected to the chuck base and the workpiece support member.

Abstract: An asymmetrical focus ring varies the flow-field, which aids in normalizing pressure gradients across the wafer being processed, thereby improving the process. Embodiments of the present invention utilize a focus ring that either (1) contains a pattern of through holes that enhances pumping, or (2) does not contain any such pattern.

Abstract: An apparatus for processing a workpiece with a plasma includes a plasma chamber having an interior processing space, a plasma generating assembly, a gas supply system communicated to the chamber and operable to supply one or more gasses to the processing space, and a vacuum system communicated to the chamber and operable to remove gas from the chamber. A magnet assembly having a plurality of magnets and being constructed and arranged to hold the plurality of magnets in a predetermined configuration is rotatably mounted within the chamber so that the plurality of magnets are positioned to impose a magnetic field on a plasma within the processing space.

Abstract: A sealing apparatus includes a sealing arrangement and a groove in a base. The sealing arrangement may comprise an o-ring and a grounding gasket where both the o-ring and the grounding gasket partially protrude in a longitudinal direction from the groove. Thus, the grounding gasket, which is equipped with ends that can be pulled out of the groove, can be removed from the groove by a pulling force. This leaves the o-ring accessible for removal or maintenance at a much lower cost in terms of manufacturing and operational costs. The sealing arrangement may also include inner and outer o-rings which seal a fluid flow from the atmosphere.