Abstract: A plasma reactor or vacuum processing apparatus is provided with an orifice plate assembly. The orifice plate assembly includes an upper plate and a lower plate. Each plate is configured with through holes. The upper and lower orifice plates are independently rotatable with respect to each other. The plates are arranged within the vacuum chamber a discharge reactor such that the chuck assembly is disposed within an opening in the orifice plate assembly. The orifice plate assembly is further configured to have a perimeter shape that substantially matches the interior wall shape of vacuum chamber.

Abstract: A plasma reactor apparatus (100) includes plasma generating assembly (150) that is moveable between a first and second position. The plasma generating assembly (150) includes an inductive coil assembly (216) that is coupled to a source of RF energy. In the first position, access is provided for mounting a wafer (101) onto a chuck assembly (250). In the second position, the plasma generating assembly (150) and the substrate chuck assembly (250) form an enclosed area (300) about the wafer (101). Process gas is used to fill the enclosed space (300) while a vacuum is created in the enclosed space (300). RF energy is applied to the inductive coil (218) and plasma is formed in the enclosed space (300) in order to process the wafer (101).

Abstract: A plasma processing system includes an electrode assembly (150) having a metal drive electrode (154) coupled to a source electrode (152) using fasteners (132) which do not introduce contaminants into the plasma processing chamber. In addition, the source electrode (152) is provided with at least a partially metallized surface (151) that serves as the interface between the metal drive electrode (154) and the source electrode material (153).

Abstract: A plasma processing apparatus for spatial control of dissociation and ionization and a method for controlling the dissociation and ionization in the plasma. An aspect of the present invention provides a plasma processing apparatus for spatial control of dissociation and ionization includes a process chamber, a plasma generating system configured and arranged to produce a plasma in the process chamber, a substrate holder configured to hold a substrate during substrate processing, a gas source configured to introduce gases into the process chamber, a pressure-control system for maintaining a selected pressure within the process chamber, and, a plurality of partitions dividing the internal volume of the process chamber into one or more spatial zones. These partitions extend from a wall of the process chamber toward said substrate holder.

Abstract: A plasma processing apparatus and a method for improving plasma characteristics by controlling the dissociation and ionization in the plasma are described. The method includes providing a flow of precursor gas into a process chamber, and evacuating excess gas from process chamber, disposing a substrate material on a substrate holder in the process chamber, forming a plasma from the precursor gas in a plasma volume within the process chamber and attenuating the plasma in a space surrounding the substrate with a baffle assembly and the substrate holder. The walls of the baffle assembly surround the outside edges and a portion of a surface of the substrate holder opposed to a surface on which the substrate is disposed.

Abstract: A plasma processing system that includes a chamber enclosing a plasma region. The system has a plasma source including a power source coupled to an electrode provided within the chamber to deliver RF power into the plasma region. The RF power forms an RF electromagnetic field that interacts with a gas in the plasma region to create a plasma. In one embodiment, an absorbing surface including an RF absorber is provided within the plasma region, and a protective layer is provided on the absorber to seal the absorber from plasma within the plasma region. Alternately, a non-reflecting surface is provided within the plasma region. The non-reflecting surface comprises a layer of dielectric material and acts to minimize reflection of RF power at a design frequency. The non-reflecting surface further includes a thickness equivalent to the quarter wavelength of a wave propagating in the dielectric layer at the design frequency.

Abstract: An improved apparatus for material processing, wherein the improved apparatus including a plasma processing system to process a substrate, the plasma processing system including a process chamber, a substrate holder, and a plasma source. The plasma source further includes an inductive coil assembly for inductively coupling RF power to plasma wherein the inductive coil assembly is arranged within a process chamber. The inductive coil assembly includes an inner conductor, a slotted outer conductor, and a dielectric layer. The inductive coil assembly can further include a second dielectric layer in order to protect the slotted outer conductor from plasma. The inner conductor is surrounded by the slotted outer conductor and, between which, resides the first dielectric layer. The second dielectric layer encapsulates the inner conductor, first dielectric layer and the slotted outer conductor.

Abstract: A system and method for processing plural wafers in a plasma processing system using a single upper electrode. By placing plural wafer holders into a single plasma processing chamber, the footprint of a resulting plasma chamber may be made smaller than the total footprint of an equivalent number of individual chambers. Moreover, pumping may be increased by placing plural pumps below the wafer holders, and preferably in positions not obstructed by the wafer holders.

Abstract: A scavenger assembly for use with a plasma etching chamber having an electrode. The scavenger assembly including an adjustable scavenger plug adapted to extend from the electrode into the plasma etching chamber. The adjustable scavenger plug provides a structure for spatially tailoring an etch profile in the plasma etch chamber. Additionally, a method is provided for etching a substrate in a plasma etching chamber. The method includes the steps of providing the substrate on a chuck assembly within the plasma etching chamber, providing an electrode within the plasma etching chamber opposite the chuck assembly, and providing an adjustable scavenger plug extending from the electrode into the plasma etching chamber. The method further includes the step of performing an etching operation on the substrate by spatially tailoring an etch profile in the plasma etch chamber using the adjustable scavenger plug.