Abstract: A technique is described in which a layer to be transferred is easily peeled and transferred to a transferred body that is pliable or flexible. Also, a method of fabricating a semiconductor device using these peeling and transfer techniques, and electronic equipment fabricated with the semiconductor device is described. A transfer method in which a layer to be transferred formed on a substrate is transferred to a transfer body that is pliable or flexible includes the first step of forming a layer to be transferred on a substrate; the second step of bonding the layer to be transferred formed on the substrate to a transfer body that is pliable or flexible fixed on a fixture; and the third step of peeling the layer to be transferred from the substrate and transferring the layer to be transferred to the transfer body.

Abstract: A transfer method comprising a step of forming a plurality of transferred bodies on a transfer origin substrate, and a step of applying energy to partial regions corresponding to the transferred bodies to be transferred, and transferring these transferred bodies corresponding to the partial regions onto a transfer destination substrate. A plurality of transferred bodies such as devices or circuits that are to be disposed on a transfer destination substrate with spaces therebetween can be manufactured integrated together on a transfer origin substrate, and hence compared with the case that the transferred bodies are formed on the transfer destination substrate directly, the amount of materials used in the manufacture of the transferred bodies can be reduced, the area efficiency can be greatly improved, and a transfer destination substrate on which a large number of devices or circuits are disposed in scattered locations can be manufactured efficiently and cheaply.

Abstract: A transfer method comprising a step of forming a plurality of transferred bodies on a transfer origin substrate, and a step of applying energy to partial regions corresponding to the transferred bodies to be transferred, and transferring these transferred bodies corresponding to the partial regions onto a transfer destination substrate. A plurality of transferred bodies such as devices or circuits that are to be disposed on a transfer destination substrate with spaces therebetween can be manufactured integrated together on a transfer origin substrate, and hence compared with the case that the transferred bodies are formed on the transfer destination substrate directly, the amount of materials used in the manufacture of the transferred bodies can be reduced, the area efficiency can be greatly improved, and a transfer destination substrate on which a large number of devices or circuits are disposed in scattered locations can be manufactured efficiently and cheaply.

Abstract: A technique enabling a reduction in manufacturing cost of an electric device (for example, an organic EL display device) using a substrate requiring a barrier layer is described. A manufacturing method of the electric device of may include forming a peeling layer on a first substrate, forming a transferred layer that includes an electric element on the peeling layer, forming the barrier layer on the transferred layer, bonding a second substrate to the transferred layer formation on a surface side of the first substrate via an adhesive layer, transferring energy to the peeling layer through the first substrate to cause peeling in the peeling layer, and separation of the first substrate from the second substrate.

Abstract: To provide a thin film circuit device in which a three-dimensional circuit structure is realized, a thin film circuit device is formed of a first thin film circuit layer and a second thin film circuit layer laminated to each other. The first thin film circuit layer contains a first thin film circuit provided between an underlayer and a protective layer and a lower connection electrode connected to the first thin film circuit and exposed at a part of the bottom surface of the underlayer. The second thin film circuit layer contains a second thin film circuit provided between an underlayer and a protective layer, an upper connection electrode connected to the second thin film circuit and exposed at a part of the top surface of the protective layer, and a lower connection electrode connected to the second thin film circuit and exposed at a part of the bottom surface of the underlayer.

Abstract: The invention provides a transfer technique by which the dimensional precision of a thin-film device is not deteriorated, even if the device is produced by transferring a fine structure or a thin-film circuit layer onto a substrate with an inferior shape-stability. The method includes: forming a fine structure or a thin-film circuit layer on a first substrate using a photolithographic patterning process; shifting the fine structure or the thin-film circuit layer from the first substrate onto a second substrate, or shifting the fine structure or the thin-film circuit layer from the first substrate onto the second substrate via a third substrate; and forming a thin-film pattern on the fine structure or the thin-film circuit layer shifted onto the second substrate by a non-photolithographic method.

Abstract: To provide a sheet-shaped organic EL display device having a reduced thickness, an organic EL display device includes a substrate serving as both a protective layer to reduce or prevent permeation of moisture, oxygen, and the like into the inside and a support layer for film formation, a laminate which is provided on a under layer by film formation and which includes a thin film circuit layer carrying an electric circuit and an organic EL light emitting layer carrying an organic EL light emitting element, and an adhesive layer joining the above-described laminate and the above-described substrate. The above-described organic EL light emitting element radiates the emitted light toward the above-described under layer side. In this manner, a low-profile organic EL display device can be provided.

Abstract: A peeling layer 2 is formed on an element-forming substrate 1, an element-forming layer 3 including an electrical element is formed on the peeling layer, the element-forming layer is joined by means of a dissolvable bonding layer 4 to a temporary transfer substrate 5, the bonding force of the peeling layer is weakened to peel the element-forming layer from the element-forming substrate, the layer is moved to the temporary transfer substrate 5 side, a curable resin 6 is applied onto the element-forming layer 3 which has been moved onto the temporary transfer substrate 5, the resin is cured to form a transfer substrate 6, and the bonding layer 4 is dissolved to peel the temporary transfer substrate 5 from the transfer substrate 6, resulting in a structure in which a transfer substrate is formed directly on the element-forming layer 3.

Abstract: The present application provides a manufacturing method for a device which enables manufacture of a device effectively at low cost by dispersingly arranging elements such as TFTs on a final substrate which becomes an active matrix substrate for electro-optic devices, a device obtained by the method, an electro-optic device, and electronic equipment. The method is to prepare a part or all of many elements formed on a first substrate 10 and then these elements are transferred to a second substrate 14. for manufacturing a device.

Abstract: A device manufacturing method, including: a first process for providing the plural elements on the original substrate via a separation layer in a condition where terminal sections are exposed to a surface on an opposite side to the separation layer; a second process for adhering the surface where the terminal sections of the elements to be transferred on the original substrate are exposed, via conductive adhesive, to a surface of the final substrate on a side where conductive sections for conducting with the terminal sections of the elements are provided; a third process for producing exfoliation in the separation layer between the original substrate and the final substrate; and a fourth process for separating the original substrate from which the transfer of elements has been completed, from the final substrate.

Abstract: The present invention aims to manufacture a large size semiconductor device with the inter-substrate transcription technology of thin film circuits. Enlargement is enabled by disposing a plurality of second substrates (21) in a tile shape. As the second substrate (21), a print substrate or flexible print circuit having double-sided wiring or multilayer wiring is employed. The plurality of second substrates (21) is driven independently, and the plurality of second substrates (21) is made to mutually overlap, and a drive circuit (23) is disposed at such overlapping portion. Moreover, the plurality of second substrates (21) is made to mutually overlap, and the mutual circuits are connected at such overlapping portion.

Abstract: In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.

Abstract: A peeling layer 2 is formed on an element-forming substrate 1, an element-forming layer 3 including an electrical element is formed on the peeling layer, the element-forming layer is joined by means of a dissolvable bonding layer 4 to a temporary transfer substrate 5, the bonding force of the peeling layer is weakened to peel the element-forming layer from the element-forming substrate, the layer is moved to the temporary transfer substrate 5 side, a curable resin 6 is applied onto the element-forming layer 3 which has been moved onto the temporary transfer substrate 5, the resin is cured to form a transfer substrate 6, and the bonding layer 4 is dissolved to peel the temporary transfer substrate 5 from the transfer substrate 6, resulting in a structure in which a transfer substrate is formed directly on the element-forming layer 3.

Abstract: A transfer method comprising a step of forming a plurality of transferred bodies on a transfer origin substrate, and a step of applying energy to partial regions corresponding to the transferred bodies to be transferred, and transferring these transferred bodies corresponding to the partial regions onto a transfer destination substrate. A plurality of transferred bodies such as devices or circuits that are to be disposed on a transfer destination substrate with spaces therebetween can be manufactured integrated together on a transfer origin substrate, and hence compared with the case that the transferred bodies are formed on the transfer destination substrate directly, the amount of materials used in the manufacture of the transferred bodies can be reduced, the area efficiency can be greatly improved, and a transfer destination substrate on which a large number of devices or circuits are disposed in scattered locations can be manufactured efficiently and cheaply.