Abstract: A memory module for reporting information about a fail in chip units, an operation of a memory module, and an operation of a memory controller are provided. The memory module includes: first to Mth memory chips (where M is an integer that is equal to or greater than 2) mounted on a module board and storing data, and an (M+1)th memory chip mounted on the module board and storing a parity code for recovering data of a memory chip in which a fail in chip units occurs among the first to Mth memory chips, wherein fail bits are generated from the first to (M+1)th memory chips through an intra-chip error detection operation, and fail information is output according to a result of calculating the fail bits from the first to (M+1)th memory chips.

Abstract: A method for addressing memory device data arranged in rows and columns indexed by a first number of row address bits and a second number of column address bits, and addressed by a row command specifying a third number of row address bits followed by a column command specifying a fourth number of column address bits, the first number being greater than the third number or the second number being greater than the fourth number, includes: splitting the first number of row address bits into first and second subsets, and specifying the first subset in the row command and the second subset in a next address command when the first number is greater than the third number; otherwise splitting the second number of column address bits into third and fourth subsets, and specifying the fourth subset in the column command and the third subset in a previous address command.

Abstract: A memory swap operation comprises writing information about a process in which a page fault occurred, into a temporary memory using a processor of a host, copying a page in which the page fault occurred, from a memory device recognized as a swap memory into a main memory of the host, and after completing the copying of the page, resuming the process in which the page fault occurred, using the information about the process, written in the temporary memory.

Abstract: A hybrid memory controller performs receiving first and second central processing unit (CPU) requests to write to/read from a hybrid memory group, identifying a volatile memory device and a non-volatile memory device as a first target and second target of the first and second CPU requests, respectively, by decoding and address mapping of the first and second CPU requests, queuing the first and second CPU requests in first and second buffers, respectively, generating, based on an arbitration policy, a first command corresponding to one of the first and second CPU requests to an associated one of the first and second targets, and generating a second command corresponding to another one of the first and second CPU requests to an associated another one of the first and second targets, and transmitting the first and second commands to respective ones of the volatile and non-volatile memory devices.

Abstract: A memory module includes a plurality of memory components, an in-memory power manager, and an interface to a host computer over a memory bus. The in-memory power manager is configured to control a transition of a power state of the memory module. The transition of the power state of the memory module includes a direct transition from a low power down state to a maximum power down state.

Abstract: A method includes: providing a DDR interface between a host memory controller and a memory module; and providing a message interface between the host memory controller and the memory module. The memory module includes a non-volatile memory and a DRAM configured as a DRAM cache of the non-volatile memory. Data stored in the non-volatile memory of the memory module is asynchronously accessible by a non-volatile memory controller of the memory module, and data stored in the DRAM cache is directly and synchronously accessible by the host memory controller.

Abstract: A method for addressing memory device data arranged in rows and columns indexed by a first number of row address bits and a second number of column address bits, and addressed by a row command specifying a third number of row address bits followed by a column command specifying a fourth number of column address bits, the first number being greater than the third number or the second number being greater than the fourth number, includes: splitting the first number of row address bits into first and second subsets, and specifying the first subset in the row command and the second subset in a next address command when the first number is greater than the third number; otherwise splitting the second number of column address bits into third and fourth subsets, and specifying the fourth subset in the column command and the third subset in a previous address command.

Abstract: A hybrid memory controller performs receiving first and second central processing unit (CPU) requests to write to/read from a hybrid memory group, identifying a volatile memory device and a non-volatile memory device as a first target and second target of the first and second CPU requests, respectively, by decoding and address mapping of the first and second CPU requests, queuing the first and second CPU requests in first and second buffers, respectively, generating, based on an arbitration policy, a first command corresponding to one of the first and second CPU requests to an associated one of the first and second targets, and generating a second command corresponding to another one of the first and second CPU requests to an associated another one of the first and second targets, and transmitting the first and second commands to respective ones of the volatile and non-volatile memory devices.

Abstract: A method for operating a storage device includes sending a request for a internal operation time for an internal operation to an external device, receiving an internal operation command corresponding to the request from the external device, and performing the internal operation during the internal operation time based on the internal operation command.

Abstract: A method for addressing memory device data arranged in rows and columns indexed by a first number of row address bits and a second number of column address bits, and addressed by a row command specifying a third number of row address bits followed by a column command specifying a fourth number of column address bits, the first number being greater than the third number or the second number being greater than the fourth number, includes: splitting the first number of row address bits into first and second subsets, and specifying the first subset in the row command and the second subset in a next address command when the first number is greater than the third number; otherwise splitting the second number of column address bits into third and fourth subsets, and specifying the fourth subset in the column command and the third subset in a previous address command.

Abstract: A memory module includes a memory array, an interface and a controller. The memory array includes an array of memory cells and is configured as a dual in-line memory module (DIMM). The DIMM includes a plurality of connections that have been repurposed from a standard DIMM pin out configuration to interface operational status of the memory device to a host device. The interface is coupled to the memory array and the plurality of connections of the DIMM to interface the memory array to the host device. The controller is coupled to the memory array and the interface and controls at least one of a refresh operation of the memory array, control an error-correction operation of the memory array, control a memory scrubbing operation of the memory array, and control a wear-level control operation of the array, and the controller to interface with the host device.

Abstract: A memory module includes: a non-volatile memory; and an asynchronous memory interface to interface with a memory controller. The asynchronous memory interface may use repurposed pins of a double data rate (DDR) memory channel to send an asynchronous data to the memory controller. The asynchronous data may be device feedback indicating a status of the non-volatile memory.

Abstract: A memory system includes: one or more memory modules, each comprising a plurality of memory devices having corresponding write commit policies; and one or more memory controllers coupled to the one or more memory modules, the one or more memory controllers having a configurable write operation protocol to operate with the memory devices according to the corresponding write commit policies

Abstract: A method of accessing volatile memory devices, nonvolatile memory devices, and a controller controlling the volatile memory devices and the nonvolatile memory devices is provided. The method includes receiving, by the controller, a row address associated with the volatile memory devices and the nonvolatile memory devices through first lines at a first timing, receiving, by the controller, an extended address associated with the nonvolatile memory devices through second lines at a second timing, and receiving, by the controller, a column address associated with the nonvolatile memory devices and the volatile memory devices through third lines at a third timing.

Abstract: A nonvolatile memory device includes a nonvolatile memory, a volatile memory being a cache memory of the nonvolatile memory, and a first controller configured to control the nonvolatile memory. The nonvolatile memory device further includes a second controller configured to receive a device write command and an address, and transmit, to the volatile memory through a first bus, a first read command and the address and a first write command and the address sequentially, and transmit a second write command and the address to the first controller through a second bus, in response to the reception of the device write command and the address.

Abstract: An electronic device includes a memory controller; a first memory device coupled to the memory controller; a second memory device coupled to the memory controller, the second memory device being a different type of memory from the first memory device; and a conversion circuit between the memory controller and the second memory device. The memory controller is configured to send a first command and first data to the first memory device according to a first timing scheme to access the first memory device, and send a second command and a packet to the conversion circuit according to the first timing scheme to access the second memory device. The conversion circuit is configured to receive the second command and the packet, and access the second memory device based on the second command and the packet.

Abstract: A computing system includes a host, at least one memory module connected with the host through a first channel, and at least one nonvolatile memory module connected with the host through a second channel. The host includes an encoder configured to encode packet data, and a memory module driver configured to transfer the encoded packet data to the at least one memory module when there is no need to decode the encoded packet data and to decode the encoded packet data using a decoder table when there is a need to decode the encoded packet data, the memory module transferring the decoded packet data to the at least one nonvolatile memory module.

Abstract: A memory system includes first and second memory devices, a memory controller configured to control the second memory device, to store a request signal to access the first memory device, and to generate an interrupt signal, and a host configured to receive the request signal in response to the interrupt signal.

Abstract: Electronic devices and memory management methods thereof are provided. Memory management methods may include setting page data of a nonvolatile memory as a read/write mode, copying the page data of the nonvolatile memory to a dynamic random access memory (DRAM) and setting the page data of the DRAM copied from the nonvolatile memory as a read only mode.

Abstract: Provided is a memory mapping method, and particularly provided is a nonvolatile main memory mapping method for managing a nonvolatile main memory. The nonvolatile memory mapping method includes: performing a system call in order to access a file page that is required to operate a process stored in a kernel area of a nonvolatile main memory, wherein both the file page and process are stored in the kernel area of the nonvolatile main memory; and mapping a physical address of the file page to a virtual address of a user area of the nonvolatile main memory.