Patents by Inventor Sun Young Lim

Sun Young Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9472305
    Abstract: A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region including a plurality of repair memory units, includes repairing the boot memory region by performing at least one of excluding first fault memory units of the boot memory region from use as storage and replacing the first fault memory units with boot repair memory units of the repair memory units, each of the first fault memory units having at least one fault memory cell; and after the repairing the boot memory region, repairing the normal memory region by performing at least one of excluding second fault memory units from use as storage and replacing the second fault memory units with normal repair memory units of the repair memory units.
    Type: Grant
    Filed: November 6, 2014
    Date of Patent: October 18, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Min-Yeab Choo, Bu-Il Jung, Do-Geun Kim, Mi-Kyoung Park, Dong-Yang Lee, Sun-Young Lim, Ju-Yun Jung, Hyuk Han
  • Patent number: 9454496
    Abstract: A memory system is provided, which includes a real memory space and a virtual memory space. The memory system includes a memory device having a first memory space which is accessed using a first memory address and a second memory space which is accessed using a second memory address, and a memory controller configured to control access to the memory device; wherein the memory controller is configured to translate the first memory address into the second memory address mapped thereto in response to a request for access to the first memory space, access the second memory space using the translated second memory address, and access the second memory space using the non-translated second memory address, in response to a request for access to the second memory space.
    Type: Grant
    Filed: February 20, 2014
    Date of Patent: September 27, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sun-Young Lim
  • Publication number: 20160154733
    Abstract: In a method of operating a solid state drive including a non-volatile memory, a volatile memory and a controller, the controller reads fail information of the volatile memory from a fail information region included in the non-volatile memory. The controller maps a logical address of data to a physical address of the volatile memory based on a bad address list and a clean address list that are generated based on the fail information. The controller loads the data into the volatile memory according to the address mapping. The method of operating a solid state drive may block access to fail addresses corresponding to failed cells included in the solid state drive by sequentially mapping logical addresses to physical addresses of a volatile memory included in the solid state drive based on a clean address list and a bad address list that are generated based on a fail information.
    Type: Application
    Filed: December 1, 2015
    Publication date: June 2, 2016
    Inventors: SUN-YOUNG LIM, CHUL-UNG KIM, JONG-HYUN CHOI
  • Patent number: 9244824
    Abstract: A memory sub-system includes a main memory, a storage device, a control unit, and a common interface unit. The control unit is configured to control the main memory and the storage device. The common interface unit is operatively coupled to the control unit, and is configured to access the main memory and the storage device through the control unit in response to a request received from a host.
    Type: Grant
    Filed: July 1, 2013
    Date of Patent: January 26, 2016
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Sun-Young Lim, Dong-Hwi Kim
  • Publication number: 20160004655
    Abstract: A computing system includes a first unified module including a first storage device and a second storage device that are different from each other, and a unified module interface configured to provide a direct memory access (DMA) request signal to control a first DMA with respect to the first storage device and to perform a second DMA on the second storage device. An application processor is configured to receive the DMA request signal from the unified module interface, and provide a DMA request response signal to the unified module interface and control the second DMA with respect to the second storage device.
    Type: Application
    Filed: July 3, 2015
    Publication date: January 7, 2016
    Inventors: YOUNG-KWANG YOO, JIN-HYEOK CHOI, SUN-YOUNG LIM, YOUNG-JIN CHO
  • Publication number: 20150363106
    Abstract: An electronic device includes a memory controller; a first memory device coupled to the memory controller; a second memory device coupled to the memory controller, the second memory device being a different type of memory from the first memory device; and a conversion circuit between the memory controller and the second memory device. The memory controller is configured to send a first command and first data to the first memory device according to a first timing scheme to access the first memory device, and send a second command and a packet to the conversion circuit according to the first timing scheme to access the second memory device. The conversion circuit is configured to receive the second command and the packet, and access the second memory device based on the second command and the packet.
    Type: Application
    Filed: May 27, 2015
    Publication date: December 17, 2015
    Inventors: Sun-Young LIM, Dong-Yang LEE, Young-Jin CHO, Oh-Seong KWON
  • Patent number: 9195579
    Abstract: A memory system includes a central processing unit (CPU), a nonvolatile memory electrically coupled to the CPU and a main memory, which is configured to swap an incoming code page for a target code page therein, in response to a first command issued by the CPU. The main memory can be configured to swap the target code page in the main memory to the nonvolatile memory in the event a page capacity of the main memory is at a threshold capacity. The CPU may also be configured to perform a frequency of use analysis on the target code page to determine whether the target code page is to be swapped to the nonvolatile memory or discarded. The incoming code page may be provided by a disk drive storage device and the main memory may be a volatile memory.
    Type: Grant
    Filed: January 30, 2013
    Date of Patent: November 24, 2015
    Assignees: Samsung Electronics Co., Ltd., Research & Business Foundation, Sungkyunkwan University
    Inventors: Oh-Seong Kwon, Hwansoo Han, Sun-Young Lim, Seonggun Kim
  • Publication number: 20150261616
    Abstract: A memory swap operation comprises writing information about a process in which a page fault occurred, into a temporary memory using a processor of a host, copying a page in which the page fault occurred, from a memory device recognized as a swap memory into a main memory of the host, and after completing the copying of the page, resuming the process in which the page fault occurred, using the information about the process, written in the temporary memory.
    Type: Application
    Filed: March 4, 2015
    Publication date: September 17, 2015
    Inventors: SUN-YOUNG LIM, SUNG-YONG SEO, YOUNG-JIN CHO, JU-YUN JUNG
  • Publication number: 20150199230
    Abstract: A memory system includes a memory controller, a memory cell array, a location information storage unit, an address mapping table, an address conversion unit, and a mapping information calculation unit. The memory controller generates a logical address signal and an address re-mapping command. The memory cell array includes a plurality of logic blocks. The location information storage unit stores location information corresponding to faulty memory cells included in the memory cell array. The address mapping table stores address mapping information. The address conversion unit converts the logical address signal to a physical address signal corresponding to the memory cell array based on the address mapping information. The mapping information calculation unit generates the address mapping information to reduce the number of logic blocks including the faulty memory cells based on the location information upon the mapping information calculation unit receiving the address re-mapping command.
    Type: Application
    Filed: October 27, 2014
    Publication date: July 16, 2015
    Inventors: MI-KYOUNG PARK, Dong-Yang Lee, Sun-Young Lim, Bu-Il Jung, Ju-Yun Jung, Sung-Ho Cho, Hee-Joo Choi, Min-Yeab Choo, Hyuk Han
  • Publication number: 20150199201
    Abstract: In a method of operating a memory system including a memory device, a memory controller and a host according to example embodiments, a hardware is initialized based on a fail information and a boot code stored in a nonvolatile memory of a volatile memory and the nonvolatile memory included in the memory device. A host processes data in an internal memory included in the memory controller and a safe region included in the memory device based on the fail information. Using the fail information, the method of operating the memory system according to example embodiments increases the performance of the whole system including the memory system.
    Type: Application
    Filed: October 27, 2014
    Publication date: July 16, 2015
    Inventors: SUN-YOUNG LIM, MIN-YEAB CHOO, MI-KYOUNG PARK, DONG-YANG LEE, BU-IL JUNG, JU-YUN JUNG, HYUK HAN
  • Publication number: 20150193464
    Abstract: Provided is a micro-journaling for a file system based on a non-volatile memory. A system includes a central processing unit (CPU), a main memory realized in a non-volatile memory, and a storage device. The file system resides in the non-volatile main memory, and micro-journaling is performed. The micro-journaling includes a commit operation for flushing data of a CPU cache to a user space, and a checkpoint operation performed per page unit while a file write operation is performed through a system call. Since the non-volatile main memory is capable of permanently storing data, a data double duplication process for reliability of the file system may be removed, and the file system is recovered from a sudden power-off of the system by using the micro-journaling for recording logging information while the file write operation is performed and checking a point.
    Type: Application
    Filed: August 22, 2014
    Publication date: July 9, 2015
    Inventors: Oh-seong Kwon, Hwan-soo Han, Sun-young Lim, Sung-tae Ryu
  • Publication number: 20150193354
    Abstract: Provided is a memory mapping method, and particularly provided is a nonvolatile main memory mapping method for managing a nonvolatile main memory. The nonvolatile memory mapping method includes: performing a system call in order to access a file page that is required to operate a process stored in a kernel area of a nonvolatile main memory, wherein both the file page and process are stored in the kernel area of the nonvolatile main memory; and mapping a physical address of the file page to a virtual address of a user area of the nonvolatile main memory.
    Type: Application
    Filed: October 7, 2014
    Publication date: July 9, 2015
    Applicant: Sungkyunkwan University Research and Business Foundation
    Inventors: Oh-seong Kwon, Hwan-soo Han, Jung-sik Choi, Sun-young Lim
  • Publication number: 20150131393
    Abstract: A method of repairing a memory device including a boot memory region, a normal memory region, and a redundant memory region, the redundant memory region including a plurality of repair memory units, includes repairing the boot memory region by performing at least one of excluding first fault memory units of the boot memory region from use as storage and replacing the first fault memory units with boot repair memory units of the repair memory units, each of the first fault memory units having at least one fault memory cell; and after the repairing the boot memory region, repairing the normal memory region by performing at least one of excluding second fault memory units from use as storage and replacing the second fault memory units with normal repair memory units of the repair memory units.
    Type: Application
    Filed: November 6, 2014
    Publication date: May 14, 2015
    Inventors: Min-Yeab CHOO, Bu-Il JUNG, Do-Geun KIM, Mi-Kyoung PARK, Dong-Yang LEE, Sun-Young LIM, Ju-Yun JUNG, Hyuk HAN
  • Publication number: 20150128000
    Abstract: In a method of operating a memory system including a memory device and a memory controller, the memory controller reads fail information from a fail info region included in the memory device. The memory controller maps a logical address related to a program to a physical address of a safe region based on the fail information to store the program in the safe region except the fail info region and a fail region included in the memory device. The memory controller loads the program into the safe region of the memory device according to the address mapping. The method of operating the memory system according to example embodiments increases the performance of the memory system.
    Type: Application
    Filed: November 3, 2014
    Publication date: May 7, 2015
    Inventors: Ju-Yun JUNG, Min-Yeab CHOO, Do-Geun KIM, Mi-Kyoung PARK, Dong-Yang LEE, Sun-Young LIM, Bu-Il JUNG, Hyuk HAN
  • Publication number: 20150039814
    Abstract: A storage device may include a nonvolatile storage and a storage controller. The nonvolatile storage may include a map table which stores information including a logical address, a physical address corresponding to the logical address and a correlation index designating the physical address. The storage controller is configured to transmit the information to an external host device, and to access the nonvolatile storage based on a request and the correlation index, each of the request and the correlation index transmitted from the host device.
    Type: Application
    Filed: August 1, 2014
    Publication date: February 5, 2015
    Inventors: Sun-Young LIM, Jin-Hwa LEE, Dong-Hwi KIM
  • Publication number: 20140281286
    Abstract: A memory system is provided, which includes a real memory space and a virtual memory space. The memory system includes a memory device having a first memory space which is accessed using a first memory address and a second memory space which is accessed using a second memory address, and a memory controller configured to control access to the memory device; wherein the memory controller is configured to translate the first memory address into the second memory address mapped thereto in response to a request for access to the first memory space, access the second memory space using the translated second memory address, and access the second memory space using the non-translated second memory address, in response to a request for access to the second memory space.
    Type: Application
    Filed: February 20, 2014
    Publication date: September 18, 2014
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Sun-Young LIM
  • Publication number: 20140189183
    Abstract: A memory system includes first and second memory devices, a memory controller configured to control the second memory device, to store a request signal to access the first memory device, and to generate an interrupt signal, and a host configured to receive the request signal in response to the interrupt signal.
    Type: Application
    Filed: November 26, 2013
    Publication date: July 3, 2014
    Applicant: Samsung Electronics Co., Ltd
    Inventors: SUN-YOUNG LIM, DONG-HWI KIM
  • Publication number: 20140013066
    Abstract: A memory sub-system includes a main memory, a storage device, a control unit, and a common interface unit. The control unit is configured to control the main memory and the storage device. The common interface unit is operatively coupled to the control unit, and is configured to access the main memory and the storage device through the control unit in response to a request received from a host.
    Type: Application
    Filed: July 1, 2013
    Publication date: January 9, 2014
    Inventors: SUN-YOUNG LIM, Dong-Hwi Kim
  • Publication number: 20130262738
    Abstract: A memory system includes a central processing unit (CPU), a nonvolatile memory electrically coupled to the CPU and a main memory, which is configured to swap an incoming code page for a target code page therein, in response to a first command issued by the CPU. The main memory can be configured to swap the target code page in the main memory to the nonvolatile memory in the event a page capacity of the main memory is at a threshold capacity. The CPU may also be configured to perform a frequency of use analysis on the target code page to determine whether the target code page is to be swapped to the nonvolatile memory or discarded. The incoming code page may be provided by a disk drive storage device and the main memory may be a volatile memory.
    Type: Application
    Filed: January 30, 2013
    Publication date: October 3, 2013
    Applicants: Research & Business Foundation, Sungkyunkwan University, Samsung Electronics Co., Ltd.
    Inventors: Oh-Seong Kwon, Hwansoo Han, Sun-Young Lim, Seonggun Kim
  • Publication number: 20130080693
    Abstract: A hybrid memory device includes a DRAM and a non-volatile memory. When a program is executed for the first time by a central processing unit (CPU), and data is copied to the DRAM from an external memory device, the data is also copied to the non-volatile memory. The non-volatile memory is configured to directly output data stored therein to an exterior without passing through the DRAM.
    Type: Application
    Filed: August 21, 2012
    Publication date: March 28, 2013
    Inventors: Dong-Hwi Kim, Sun-Young Lim